The purpose of this thesis is to study the c-axis inclined ZnO films to produce dual-mode thin-film piezoelectric transducer. The cantilever beam vibration theory as a power generation mode in adopted to verify that the transducer is in suitable for the application in the environment for low-frequency vibration. In order to develop dual-mode thin-film piezoelectric transducer, this study uses radio-frequency magnetron sputtering method with off-axis growth to deposit ZnO films on Pt/Ti/stainless steel substrate(SUS304), the effects of deposition parameters on the characteristict of ZnO films are studied. Because zinc oxide thin-film is grown with c-axis tilt, so the piezoelectric transducer exhibits longitudinal-mode and shear-mode characteristics. The physical characteristics of ZnO thin films were obtained by the analyses of the scanning electron microscopy (SEM) and X-ray diffraction (XRD) to discuss the surfaces, cross section and crystallization of ZnO thin films. Finally, the vibration test equipment in used for the measurement of electrical properties. The open and loaded voltages of the transducers were obtained by the measurement system. The optimal deposition parameters for ZnO thin films are sputtering pressure of 5 mTorr, RF power of 150W, substrate temperature of room temperature and oxygen concentration of 50%, which were determined by physical characteristics and voltage analysis. Under the optimal parameters, the ZnO thin-films are deposited with maximum shear-mode and tilting angles of 35¢X.The transducer was one-sid loaded with a piece of metal of 0.5 g load to enhance the cantilever vibration amplitude. As the input vibration of 65 Hz and vibration amplitude of 1mm were set, the maximum output power was obtained. The maximum open circuit voltage of 19.4 V was obtained. When the output of the transducers was recetified and filtered through a 1NN5711 Schottky diode bridge rectifier and a 33nF capacitor, the maximum power of 2.05£gW/cm2 was achieved with the load resistance of 5M£[.

Orientador: César Renato Foschini / Resumo: O óxido de zinco (ZnO) apresenta uma grande versatilidade física, elétrica, mecânica e propriedades químicas que podem ser exploradas em uma variedade de aplicações, tais como fotocatálise, nanoadsorventes e sensoriamento de gases. Os materiais nanoestruturados têm atraído a atenção da ciência e tecnologia nos últimos anos porque podem melhorar suas propriedades em nanoescala. A prata em escala nanométrica tem gerado interesse de pesquisadores de diferentes áreas, pois a prata é moldável e maleável, possui elevada condutividade térmica e elétrica, além de ser um forte oxidante. Neste trabalho, foram desenvolvidos filmes de óxido de zinco puro e dopados com nanopartículas de prata, visando aplicação em sensores de gás. Os filmes de óxido de zinco foram fabricados pelo método dos precursores poliméricos e utilizados como matriz devido a sua interatividade com os gases. As nanopartículas de prata foram produzidas por meio de reação em emulsão, explorando sua alta condutividade elétrica. Dessa forma, por meio das propriedades de ambos os materiais, desenvolveu-se um sensor de gás composto de óxido de zinco na forma de filmes em substratos de Al2O3, com diferentes camadas dopadas e não dopadas com nanopartículas de prata. Notou-se que o desenvolvimento de um material compósito do tipo filme de ZnO dopado com as nanopartículas de prata, apresentou propriedades melhoradas, como por exemplo, a resposta elétrica do material quando comparada com o filme contendo apenas o filme de ZnO p... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: Zinc oxide (ZnO) presents a great physical, electrical, mechanical and chemical versatility that can be exploited in a variety of applications, such as photocatalysis, nanoadsorbents and gas sensing. Nanostructured materials have attracted the attention of science and technology in recent years because they can improve their nanoscale properties. The silver in nanoscale has generated interest of researchers of different areas, because the silver is moldable and malleable, has high thermal and electrical conductivity, besides being a strong oxidant. And this project was developed based on the production of silver nanoparticles and zinc oxide films for the application in gas sensors. The zinc oxide films were manufactured by the method of the polymeric precursors and used as matrix due to its interactivity with the gases. The silver nanoparticles were produced by means of emulsion reaction, exploring their high electrical conductivity. Thus, through the properties of both materials, a gas sensor composed of zinc oxide in the form of films on substrates of Al2O3, with different layers doped and not doped with silver nanoparticles was developed. It was noted that the development of a ZnO film-like composite material doped with the silver nanoparticles exhibited improved properties, such as the electrical response of the material as compared to the film containing only the pure ZnO film. / Mestre

We report on the experimental determination of the spontaneous polarization of wurtzite- (Mg,Zn)O by examination of the recombination dynamics of polar ZnO/(Mg,Zn)O quantum wells (QWs). The thickness-dependent decay time of the unscreened single-exciton states inside the QWs was modeled by a self-consistent solution of Schrödinger- and Poisson-equation to deduce the total polarization across the QW for different Mg-contents inside the barriers. By the separation of the piezoelectric components of the polarization, a linear increase in spontaneous polarization with increasing Mg-content x of P/x = (0.151 ± 0.015) C/m2 was determined for Mgx Zn1−x O.

We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y2, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3′ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

The low frequency noise of metal-semiconductor field-effect transistors (MESFETs) based on ZnO:Mg thin films grown by pulsed laser deposition on a-plane sapphire was investigated. In order to distinguish between noise generation in the bulk channel material, at the semiconductor surface, and at the gate/channel interface, ohmic ZnO channels without gate were investigated in detail, especially concerning the dependency of the noise on geometrical variations. The experiments suggest that the dominating 1/f noise in the frequency range below 1 kHz is generated within the bulk channel material, both for bare ZnO channels and MESFETs.

The ultrafast carrier dynamics of epitaxial ZnO and BaTiO3 thin films after intense excitation at 3.10 eV and 4.66 eV photon energy has been studied by femtosecond absorption spectroscopy. Modelling the transient transmission changes on the basis of spectroscopic ellipsometry data and pertinent equilibrium model dielectric functions extended by additional terms for the effects at high carrier density (P-band luminescence and stimulated emission from electron-hole-plasma), a self-consistent parameterized description was obtained for both materials. Excited carrier lifetimes in the range of ≈2 to ≈60 ps and long-lived thermal effects after several hundred ps have been identified in both materials. These findings form a reliable basis to quantitatively describe future femtosecond studies on ZnO/BaTiO3 heterolayer systems.

Submitted by Wagner Henrique Rabelo (wagner144@bol.com.br) on 2018-07-26T20:18:44Z No. of bitstreams: 1 MESTRADO - WAGNER RABELO - VERSÃO FINAL.pdf: 3489307 bytes, checksum: 98e6a7b1b48eed69e255358e3a62fdd9 (MD5) / Approved for entry into archive by Lucilene Cordeiro da Silva Messias null (lubiblio@bauru.unesp.br) on 2018-07-30T12:45:51Z (GMT) No. of bitstreams: 1 rabelo_mh_me_bauru.pdf: 3537069 bytes, checksum: 6434660c8d96cc051a92066c85136ebc (MD5) / Made available in DSpace on 2018-07-30T12:45:51Z (GMT). No. of bitstreams: 1 rabelo_mh_me_bauru.pdf: 3537069 bytes, checksum: 6434660c8d96cc051a92066c85136ebc (MD5) Previous issue date: 2018-05-28 / O avanço das técnicas de deposição de filmes finos sobre as superfícies dos materiais tem permitido agregar valor e dar novas funcionalidades aos produtos. Atualmente, os filmes finos de óxido de estanho dopado com índio (ITO) têm encontrado grande aplicação no mercado. Entretanto, devido à pouca disponibilidade do índio na natureza e aos altos custos envolvidos na sua aquisição, elementos alternativos estão sendo estudados para sua substituição. Nesse contexto, destaca-se o óxido de zinco dopado com alumínio (AZO) como um promissor substituto, devido às características de elevada transmissividade, baixa resistividade e band gap da ordem de 3,37 eV, que permitem sua aplicação na síntese de filmes finos semicondutores. Com base no exposto, neste trabalho, foi projetado e desenvolvido o protótipo de uma fonte amplificadora de potência (FAP) de corrente alternada (AC) em baixa frequência, operando entre 15 a 40 kHz, responsável por iniciar e sustentar o campo elétrico utilizado para a geração do plasma. Esta FAP foi utilizada para a deposição de filmes finos de (AZO) por meio da técnica de magnetron sputtering. A análise das características morfológicas, ópticas e elétricas dos filmes de AZO produzidos neste estudo resultaram em uma transmitância superior a 80%, energia de band gap de 3,82 eV, e resistividade de 1,46.10-3 .cm, permitindo concluir que o filme produzido se comporta como um TCO (óxido transparente condutivo). A comparação desses resultados com trabalhos disponíveis na literatura, permite concluir que a fonte amplificadora de potência desenvolvida nesta dissertação possibilita a obtenção de filmes finos de AZO com condutividade e transparência superiores àqueles produzidos com fontes operando em radiofrequência, técnica atualmente disponível e amplamente utilizada no mercado. / The development of thin films deposition techniques allows to increase value and give new features to the materials. Currently, indium doped zinc oxide (ITO) is widely used in the market. However, due to the low availability of the indium in the nature and the high costs involved on its acquisition, alternative elements are being studied for its replacement. Aluminum doped zinc oxide (AZO) stands out as a promising substitute, mainly because of its characteristics, such as high transmissivity, low resistivity and band gap value of 3.37 eV. That allow the application of AZO in the synthesis of thin films semiconductors. In this work, it was developed a prototype of a plasma power source amplifier (FAP) to operate in alternating current (AC) and low frequency (15 - 40 kHz), responsible for initiating and sustaining the electric field used for plasma generation. This FAP was used to deposit AZO thin films by the technique of magnetron sputtering. The analysis of the morphological, optical and electrical characteristics of the AZO films produced in this study resulted in more than 80% transmittance, band gap energy value of 3,82eV, and resistivity of 1,46.10-3 .cm. The thin films synthetized was classified as transparent conductive oxide (TCO). The comparison of these results with the characteristics of similar films avaiable in the bibliography, allows to conclude that the power amplifier source developed in this dissertation makes it possible to obtain thin films of AZO with conductivity and transparency superior to those produced with RF magnetron sputtering, technique currently available and widely used in the market.