Copper films with a thickness in the nanometer
range are required as seed layers for the
electrochemical Cu deposition to form multilevel
interconnects in ultralarge-scale
integrated (ULSI) electronic devices.
Continuously shrinking device dimensions and
increasing aspect ratios of the dual-damascene
structures in the copper-based metallization
schemes put ever more stringent requirements on
the films with respect to their conformality in
nanostructures and thickness homogeneity across
large wafers. Due to its intrinsic self-limiting
film growth characteristic, atomic layer
deposition (ALD) appears
appropriate for
homogeneously coating complex substrates and to
replace conventional physical vapor deposition
(PVD) methods beyond the 32 nm technology node.
To overcome issues of direct Cu ALD, such as
film agglomeration at higher temperatures or
reduced step coverage in plasma-based processes,
an
ALD copper oxide film may be grown under mild
processing conditions, while a subsequent
reduction
step converts it to metallic copper. In this
poster, which was presented at the AVS 9th
International Conference on Atomic Layer
Deposition (ALD 2009), held in Monterey,
California from
19 to 22 July 2009, we
report detailed film growth studies of ALD
copper
oxide in the self-limiting regime on SiO2, TaN
and Ru. Applications in subsequent
electrochemical deposition processes are
discussed, comparing Cu plating results on
as-deposited
PVD Ru as well as with PVD and reduced ALD Cu
seed layer.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:19177 |
| Date | 10 August 2009 |
| Creators | Waechtler, Thomas, Schulze, Steffen, Hofmann, Lutz, Hermann, Sascha, Roth, Nina, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael |
| Publisher | Technische Universität Chemnitz, Fraunhofer ENAS, American Vacuum Society (AVS) |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:lecture, info:eu-repo/semantics/lecture, doc-type:Text |
| Source | AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), Monterey, CA (USA), July 19-22, 2009 |
| Rights | info:eu-repo/semantics/openAccess |
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