The atomic layer deposition (ALD) of copper oxide
films from [(<sup>n</sup>Bu<sub>3</sub>P)<sub>2</sub>Cu(acac)]
and wet oxygen on SiO<sub>2</sub> and TaN has
been studied in detail by spectroscopic
ellipsometry and atomic force microscopy.
The results suggest island growth on SiO<sub>2</sub>,
along with a strong variation of the optical
properties of the films in the early stages of
the growth and signs of quantum confinement,
typical for nanocrystals. In addition, differences
both in growth behavior and film properties
appear on dry and wet thermal SiO<sub>2</sub>.
Electron diffraction together with transmission
electron microscopy shows that nanocrystalline
Cu<sub>2</sub>O with crystallites < 5 nm is
formed, while upon prolonged electron
irradiation the films decompose and metallic
copper crystallites of approximately 10 nm
precipitate. On TaN, the films grow in a
linear, layer-by-layer manner, reproducing the
initial substrate roughness. Saturated growth
obtained at 120°C on TaN as well as dry and
wet
SiO<sub>2</sub> indicates well-established ALD
growth regimes.
<br>
© 2009 The Electrochemical Society.
All rights reserved.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:19222 |
| Date | 03 November 2009 |
| Creators | Waechtler, Thomas, Roth, Nina, Mothes, Robert, Schulze, Steffen, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael |
| Publisher | Technische Universität Chemnitz, Fraunhofer ENAS, The Electrochemical Society, Inc. |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Source | ECS Transactions, Vol. 25, No. 4, pp. 277-287 (2009); Digital Object Identifier (DOI): 10.1149/1.3205062 |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 10.1149/1.3205062, 1938-5862 |
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