Transition metal and related compounds have been extensively studied over the past several decades. These investigations revealed a wide range of behavior, encompassing colossal magnetoresistance (CMR), high-TC superconductivity, and magnetic semiconductivity, all of which continue to present fundamental challenges to the understanding of such phenomena. There is, however, a close correlation between such characteristics and the appearance of magnetic order. This correlation underlies the present study, which focuses on the magnetic and transport behavior of various Manganese (Mn), Iron (Fe) and Cobalt (Co) containing materials, with particular emphasis on the nature of the magnetic order they display and the critical exponents that characterize the accompanying phase transition. The magnetic and transport properties of two specific systems will be covered: first various doped manganites from the series (La,Pr)1-x(Ca,Ba)xMnO3, and second the magnetic semiconductors Fe0.8Co0.2Si and Ga0.98Mn0.02As. In the manganites, the influence of doping on; (i) the evolution of the metal-insulator transition (MIT) with composition; (ii) the universality class of the magnetic critical behavior associated with the paramagnetic to ferromagnetic transition, which occurs in the vicinity of a MIT with which CMR is associated; (iii) the mechanisms underlying ferromagnetism across the MIT; (iv) the correlation between the appearance of a Griffiths-like phase and CMR, and (v) the origin of Griffiths-like phase have been investigated. Four different systems have been studied: La1-xCaxMnO3 (0.18 ≤ x ≤ 0.27), La1-xBaxMnO3 (x ≤ 0.33), (La1-yPry)0.7Ca0.3Mn16/18O3 (y ≤ 0.85), and Pr1-xCaxMnO3 (x = 0.27, 0.29). In Fe0.8Co0.2Si and Ga0.98Mn0.02As, the scaling between magnetization and conductivity has been the subject of ongoing debate. In bulk Fe0.8Co0.2Si, a novel scaling between the anomalous Hall effect (AHE) and the magnetization enables the anomalous Hall coefficient to be accurately determined. In turn, this enables the universality class for the transition to ferromagnetism to be established independently from the anomalous Hall conductivity. In an epitaxial (metallic) Ga0.98Mn0.02As microstructure, the magnetization has been indirectly determined from the AHE. Subsequent analysis yields magnetic critical exponents consistent with the Mean-Field model, direct support for which had previously been lacking.

We discuss the appearance of quantum orders in the Hubbard model for interacting electrons, at half-filling. Such phases do not have local order parameters and need to be characterized by the quantum mechanical properties of their ground state. On one hand, we study the Mott transition from a metal to a spin liquid insulator in two dimensions, of potential relevance to some layered organic compounds. The correlation-driven transition occurs at fixed filling and involves fractionalization of the electron: upon entering the insulator, a Fermi surface of neutral spinons coupled to an internal gauge field emerges. We focus on the transport properties near the quantum critical point and find that the emergent gauge fluctuations play a key role in determining the universal scaling. Second, motivated by a class of three-dimensional transition metal oxides, the pyrochlore iridates, we study the interplay of non-trivial band topology and correlations. Building on the strong spin orbit coupling in these compounds, we construct a general microscopic Hubbard model and determine its mean-field phase diagram, which contains topological insulators, Weyl semimetals, axion insulators and various antiferromagnets. We also discuss the effects many-body correlations on theses phases. We close by examining a fractionalized topological insulator that combines the two main themes of the thesis: fractionalization and non-trivial band topology. Specifically, we study how the two-dimensional protected surface states of a topological Mott insulator interact with a three-dimensional emergent gauge field. Various correlation effects on observables are identified.

Gene transfer techniques such as retroviral transduction have many applications such as cell marking, cell reprogramming, and therapeutics. Transgene expression, however, is often variable and maintaining long-term expression is problematic in progenitor cell types. To better control transgene expression, research has focused on the optimized use of cis-regulatory elements, such as promoters, enhancers and insulators. In addition to controlling gene expression, these regulatory elements modulate the nuclear organization of the transgene. The integration site also exerts significant effects on steady state and temporal transgene expression via the neighbouring chromatin environment. The first part of this thesis describes the co-operation of modified β-globin intronic elements in providing high-level expression and favorable nuclear localization. I demonstrate that these elements are compatible with efficient lentivirus transduction for globin gene therapy purposes. In the second chapter, I examine high-expressing EGFP retroviral transgenes and show that such steady state expression may exhibit rapid transcriptional fluctuations, which is modulated by different transcriptional dynamics at different integration sites. Finally, in the last chapter, I evaluate the use of a 3’D4Z4 insulator element in maintaining long-term EGFP transgene expression in ES cells, and discover integration-site specific temporal dynamics in retroviral vector expression. Overall, my results demonstrate that using multiple regulatory elements and insulating these elements from different types of genomic loci optimize transgene expression and dynamics in progenitor cells.

We discuss the appearance of quantum orders in the Hubbard model for interacting electrons, at half-filling. Such phases do not have local order parameters and need to be characterized by the quantum mechanical properties of their ground state. On one hand, we study the Mott transition from a metal to a spin liquid insulator in two dimensions, of potential relevance to some layered organic compounds. The correlation-driven transition occurs at fixed filling and involves fractionalization of the electron: upon entering the insulator, a Fermi surface of neutral spinons coupled to an internal gauge field emerges. We focus on the transport properties near the quantum critical point and find that the emergent gauge fluctuations play a key role in determining the universal scaling. Second, motivated by a class of three-dimensional transition metal oxides, the pyrochlore iridates, we study the interplay of non-trivial band topology and correlations. Building on the strong spin orbit coupling in these compounds, we construct a general microscopic Hubbard model and determine its mean-field phase diagram, which contains topological insulators, Weyl semimetals, axion insulators and various antiferromagnets. We also discuss the effects many-body correlations on theses phases. We close by examining a fractionalized topological insulator that combines the two main themes of the thesis: fractionalization and non-trivial band topology. Specifically, we study how the two-dimensional protected surface states of a topological Mott insulator interact with a three-dimensional emergent gauge field. Various correlation effects on observables are identified.

Gene transfer techniques such as retroviral transduction have many applications such as cell marking, cell reprogramming, and therapeutics. Transgene expression, however, is often variable and maintaining long-term expression is problematic in progenitor cell types. To better control transgene expression, research has focused on the optimized use of cis-regulatory elements, such as promoters, enhancers and insulators. In addition to controlling gene expression, these regulatory elements modulate the nuclear organization of the transgene. The integration site also exerts significant effects on steady state and temporal transgene expression via the neighbouring chromatin environment. The first part of this thesis describes the co-operation of modified β-globin intronic elements in providing high-level expression and favorable nuclear localization. I demonstrate that these elements are compatible with efficient lentivirus transduction for globin gene therapy purposes. In the second chapter, I examine high-expressing EGFP retroviral transgenes and show that such steady state expression may exhibit rapid transcriptional fluctuations, which is modulated by different transcriptional dynamics at different integration sites. Finally, in the last chapter, I evaluate the use of a 3’D4Z4 insulator element in maintaining long-term EGFP transgene expression in ES cells, and discover integration-site specific temporal dynamics in retroviral vector expression. Overall, my results demonstrate that using multiple regulatory elements and insulating these elements from different types of genomic loci optimize transgene expression and dynamics in progenitor cells.

Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset).

Thesis (M. App. Sc.)--Carleton University, 2005. / Includes bibliographical references (p. 79-82). Also available in electronic format on the Internet.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 73-76). Also available in electronic format on the Internet.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 112-118). Also available in electronic format on the Internet.

Les isolants topologiques constituent une nouvelle classe de matériaux caractérisés par l'association d'un volume isolant et de surfaces conductrices. Avec des propriétés électroniques similaires au graphene, notamment un transport régit par des particules à énergie de dispersion linéaire couramment appelés fermions de Dirac ainsi qu'une protection topologique empêchant tout phénomène de rétrodiffusion, ces matériaux suscitent un intérêt grandissant dans la quête d'une électronique de faible consommation. En effet, la production de courants de spin non-dissipatifs et polarisés ainsi que la formation de courants de spin purs en l'absence de matériaux magnétiques constituent une partie des attentes de ces matériaux topologiques.L'objectif de cette thèse a été de démontrer expérimentalement le potentiel de l'isolant topologique HgTe pour des applications notamment dans le domaine de la l'électronique de spin ou spintronique.Pour ce faire, d'importants efforts ont été mis en œuvre pour améliorer le procédé de croissance par épitaxie par jets moléculaires.La composition chimique, la contrainte ainsi que la qualité des interfaces de la couche de HgTe ont été identifiées comme des axes majeurs de travail et d'optimisation afin d'obtenir une structure de bande inversée, l'ouverture d'un gap de volume, ainsi que pour protéger les propriétés électroniques des états de surface topologiques. Fort de ces caractéristiques, notre matériau possède à priori toutes les qualités nécessaires pour permettre de sonder les propriétés topologiques. Accéder à ces propriétés particulières est en particulier possible par des mesures d'effet Hall quantique sur des structures de type barres de Hall. La fabrication de ces dispositifs a néanmoins requis une attention particulière à cause de la forte volatilité du mercure et a nécessité le développement d'un procédé de nanofabrication à basses températures.Des mesures d'effet Hall quantique à très basses températures ont ensuite été réalisées dans un cryostat à dilution. Tout d'abord des couches épaisses de HgTe ont été mesurées et ont démontrées des mécanismes de transport très complexes mêlant les états de surface topologiques à d'autres contributions attribuées au volume et aux états de surface latéraux. La réduction de l'épaisseur des couches de HgTe a permis de limiter l'impact de ces contributions en les rendant négligeable pour les couches les plus fines. Dans ces conditions, ces structures ont affiché les propriétés attendues de l'effet Hall quantique avec notamment une annulation de la résistance. Avec ces propriétés, l'analyse en température de l'effet Hall quantique a permis de démontrer la nature des porteurs circulant sur les états de surface topologiques et de les identifier à des fermions de Dirac.Avec la mise en évidence de la nature topologique de notre système, l'étape suivante a été d'utiliser les propriétés topologiques et plus particulièrement le blocage entre le moment et le spin d'un électron pour tester le potentiel du système 3D HgTe/CdTe pour la spintronique. Premièrement, des mesures de pompage de spin ont été réalisées et ont mis en exergue la puissance de ces structures pour l'injection et la détection de spin. Deuxièmement, ces structures ont été implémentéessous la forme de jonction p-n dans l'idée de réaliser un premier dispositif de spintronique qui présente à ce jour des premiers signes de fonctionnement. / With graphene-like transport properties governed by massless Dirac fermions and a topological protection preventing from backscattering phenomena, topological insulators, characterized by an insulating bulk and conducting surfaces, are of main interest to build low power consumption electronic building-blocks of primary importance for future electronics.Indeed, the absence of disorder, the generation of dissipation-less spin-polarized current or even the possibility to generate pure spin current without magnetic materials are some of the promises of these new materials.The objective of this PhD thesis has been to experimentally demonstrate the eligibility of HgTe three dimensional topological insulator system for applications and especially for spintronics.To do so, strong efforts have been dedicated to the improvement of the growth process by molecular beam epitaxy.Chemical composition, strain, defect density and sharpness of the HgTe interfaces have been identified as the major parameters of study and improvement to ensure HgTe inverted band structure, bulk gap opening and to emphasize the resulting topological surface state electronic properties. Verification of the topological nature of this system has then been performed using low temperature magneto-transport measurements of Hall bars designed with various HgTe thicknesses. It is worth noting that the high desorption rate of Hg has made the nanofabrication process more complex and required the development of a low temperature process adapted to this constraint. While the thicker samples have evidenced very complex transport signatures that need to be further investigated and understood, the thickness reduction has led to the suppression of any additional contributions, such as bulk or even side surfaces, and the demonstration of quantum Hall effect with vanishing resistance. Consequently, we have managed to demonstrate direct evidences of Dirac fermions by temperature dependent analysis of the quantum Hall effect. The next step has been to use the topological properties and especially the locking predicted between momentum and spin to test the HgTe potential for spintronics. Spin pumping experiments have demonstrated the power of these topological structures for spin injection and detection. Moreover, the implementation of HgTe into simple p-n junction has also been investigated to realize a first spin-based logic element.