Accelerometer sensors fabricated with micromachining technologies started to take place of yesterday&rsquo / s bulky sensors in many application areas. The application areas include a wide range from consumer electronics and health systems to military and aerospace applications. Therefore, the performance requirements extend form 1 &mu / g&rsquo / s to 100 thousand g&rsquo / s. However, high performance strategic grade MEMS accelerometer sensors still do not exist in the literature. Smart designs utilizing the MEMS technology is necessary in order to acquire high performance specifications. This thesis reports a high performance accelerometer with a new process by making the use of bulk micromachining technology. The new process includes the utilization of Silicon-on-Insulator (SOI) wafer and its buried oxide (BOX) layer. The BOX layer helps to realize interdigitated finger structures, which commonly find place in surface micromachined CMOS-MEMS capacitive accelerometers. The multi-metal layered CMOS-MEMS devices inherently incorporate interdigitated finger structures. Interdigitated finger structures are highly sensitive to acceleration in comparison with comb-finger structures, which generally find usage in bulk-micromachined devices, due to absence of anti-gap. The designed sensors based on this fabrication process is sought to form a fully-differential signal interfaced sensor with incorporation of the advantages of high sensitive interdigitated finger electrodes and high aspect ratio SOI wafer&rsquo / s bulk single crystal silicon device. Under the light of the envisaged process, sensor designs were made, and verified using a computing environment, MATLAB, and a finite element analysis simulator, CoventorWARE. The verified two designs were fabricated, and all the tests, except the centrifuge test, were made at METU-MEMS Research Center. Among the fabricated sensors, the one designed for the high performance achieves a capacitance sensitivity of 178 fF with a rest capacitance of 8.1 pF by employing interdigitated finger electrodes, while its comb-finger implementation can only achieve a capacitance sensitivity of 75 fF with a rest capacitance of 10 pF.

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Ceramic-matrix composites of alumina and silicon carbide whiskers have recently found novel commercial application as electromagnetic absorbers. However, a detailed understanding of how materials issues influence the composite electrical response, which underpins this application, has been absent until now. In this project, such composites were electrically measured over a wide range of conditions and modeled in terms of various aspects of the microstructure in order to understand how they work. For this purpose, three types of composites were made by different methods from the same set of ceramic powder blends loaded with different volume fractions of whiskers. In doing so, the interfaces between whiskers, the preferred orientations of whiskers, and the structure of electrically-connected whisker clusters were varied; the whisker aspect-ratio distributions were the same for all methods. At the electrode interfaces, Schottky barriers at the junctions of the electrically-percolating wide-bandgap semiconductor whiskers on the surface were responsible for a significant portion of the total measured impedance. The associated electrical response was studied on the microscopic and macroscopic level, and the gap between these different scales was bridged. Also, a modeling approach was developed for the non-linear behavior of the composite which results from these barriers. In regards to the whiskers within the composite bulk, the effects of various factors on the wide-band frequency dependence of the dielectric response and dc conductivity were explained and contextualized for the electromagnetic absorber application. Such factors include whisker preferred orientation, electrical percolation and cluster structure, the interfaces between electrically-connected SiC whiskers, and porosity. A quantitative correlation between the anisotropy of the microstructure and that of the conductivity was found, and was understood in terms of the interfacial SiC-Al2O3-SiC conduction mechanism. This behavior was shown to differ from the behavior commonly observed for other disordered mixtures of relatively conductive particles dispersed inside insulating polymer hosts. A description of this new mechanism was developed based on an observed correlation between the temperature dependencies of the static and radio-frequency electrical responses. Also, the aforementioned non-linear response model was expanded upon to describe conduction through and across electrically-percolated clusters. The model demonstrates how loading and interface behavior influence the topology and the strength of the non-linear response of the clusters.

In this thesis I present studies of some transport and spectroscopic properties for two di erent materials exhibiting large magnetoresistance. Both of these materials are oxides of transition metals, showing exotic magnetic and transport properties. Despite these similarities, they are very different in many other aspects. One of them is an oxide of Manganese, along with a rare-earth metal, and exhibits large magnetoresistance under certain conditions, when doped by an alkaline earth metal. They are known as doped rare-earth manganites. The other material, Sr2FeMoO6, exhibits large magnetoresistance in the parent compound, without any doping, but only in the polycrystalline state. The manganites, on the other hand, show magnetoresistance under appropriate conditions in both single crystal and in polycrystalline state. Moreover, manganites exhibit several Metal-Insulator Transitions (MIT) as a function of doping, temperature and magnetic field. Sr2FeMoO6, on the other hand, is usually always metallic. In the first chapter, a brief introduction is provided regarding different types of magnetoresistance (MR) phenomena observed in different materials, namely Anisotropic MR (AMR), Giant MR (GMR), Collosal MR (CMR), Tunneling MR (TMR), Powder MR (PMR) etc. Out of these, CMR and PMR are found in doped manganites, while Sr2FeMoO6 exhibits PMR only. Next, a brief overview of the structure, properties and theories for both of these materials is provided. For the case of doped manganites, a short introduction is given for a novel two-fluid hamiltonian (called l - b model) which was proposed recently by Ramakrishnan et. al.. This model reproduces several exotic transport and magnetic properties of manganites which were inexplicible by earlier theories. The model was solved within the Dynamical Mean Field Theory (DMFT) framework by Hassan et. al.. A brief description of this DMFT solution is given. Many of the DMFT results for this model have been used in the subsequent chapters. In the second chapter, the hysteresis behaviour of the magnetoresistance and the magnetization (M ) of powdered Sr2FeMoO6 is considered in detail. In a recent experi- ment by Sarma et. al., it was found that this material, when powdered exhibits an exotic variety of PMR. In ordinary PMR, the hysteresis behaviour of the MR is supposed to follow that of M, in the sense that the coercive fields should be identical in both cases. Also, the MR is supposed to be roughly proportional to the square of the magnetization. However, in the experiments by Sarma et. al. on cold-pressed Sr2FeMoO6 powder, it was observed that the M R did not appear to be determined purely by the magnetization. Rather, the coercive fields for the hysteresis of the MR was almost 6 times that of M . Moreover, the quantity M R/M2, instead of remaining constant with changing magnetic field, itself has a hysteresis loop. Apart from establishing the exotic nature of the PMR, the experiment also tries to determine whether the MR originates from intra-grain or inter-grain tunneling. In the second chapter we present a simple toy model to reproduce the experimental results, and provide theoretical explanations. A combination of Monte Carlo and transfer matrix methods are used to simulate the hysteresis behaviour of the M R as well as of M . We show that the observed data can be understood if it is as- sumed firstly that the MR arises predominantly from inter-grain rather than intra-grain tunneling, and that the inter-grain boundaries are themselves magnetic with a coercive field higher than that of the grains. In order to motivate the use of Monte Carlo method for studying hysteresis, a brief survey of main results obtained for some simple models using this technique is also provided. In the third chapter, we study the doping and temperature dependence of core-level photoemission spectra in doped rare-earth manganites. In some recent experiments on Strontium doped (LSMO) and Barium doped (LBMO) samples, it has been observed that the M n2p3/2 core-level spectra shows an intriguing spectral weight transfer over a range of several eV , as a function of doping (x) and temperature (T ), in the ferromagnetic metallic phase. Specifically, there appears a shoulder adjacent to the main peak on the side of lower binding energy, which increases in weight and intensity as the doping increases or the temperature decreases. In LSMO samples, another shoulder was noticed on the higher binding energy side also. Moreover, in data obtained from LBMO samples, the spectra at different temperatures was subtracted from the spectra at/above Tc, and then this difference spectrum was integrated. The integrated weight, when normalized by the weight at the lowest temperature, appears to follow the square of the measured magnetization almost exactly. In order to understand the experimental data, we extended the aforementioned l - b model to include a core-level, and the attractive interaction due to a core-hole on the local valence levels. The impurity problem arising in DMFT, consisting of a single impurity site coupled to a bath, was tailored for the photoemission problem, by including this extra core-level at the impurity site. The hybridization parameters for the bath were determined self-consistently from the DMFT, and then the single particle spectral function for the core-hole was determined. This spectral function is proportional to the photo emission intensity. We found that our calculations reproduced the observed spectral weight transfer as a function of x and T both in trends and in magnitude. The integrated difference spectra weight was found to follow the square of the DMFT magnetization, just as in the experiment. Linear discretization of the conduction bath was used for all the above-mentioned cases. In one particular case, a logarithmic discretization was also undertaken for comparison, and also to obtain the exponents of the edge singularities in the theoretical spectra. In the fourth chapter, the possibility of Anderson Localization in manganites is in- vestigated, using the l - b model. According to this model, a large fraction of the valence electrons are polaronically self-trapped even in the ferromagnetic metallic phase. Due to strong on-site Coulomb interaction, these polarons provide a strongly scattering background, which can localize the mobile-electron band states close to the band edges. Since the fraction of valence electrons which are truly mobile is small, hence the Fermi energy lies close to the lower band edge. Hence, there is a possibility of an Anderson Insulator phase where all charge carriers are localized. To investigate this, we studied the behaviour of the mobility edges as a function of doping. DMFT alone does not include the physics of localization. Hence, in order to obtain the mobility edges, we combined the DMFT results with the Self-consistent Theory of Localization (STL), using a simplified prescription called Potential Well Analogy (PWA) due to Economou et. al.. We found that there is indeed an Anderson Insulator phase in a certain region of doping, which would otherwise have been supposed to be metallic based on purely DMFT results. Finally, we have compared this result, obtained using effective field theories, with an actual real space simulation of the l - b model at T=0. In this case, the mobility edge trajectories were obtained by studying the Inverse Participation Ratio (IPR), as a function of band energy and doping. In the concluding chapter, the principal results presented in this thesis are summa- rized. The limitations of the approach or approximations used are discussed, and future possibilities for overcoming these limitations outlined.

Die vorliegende Arbeit behandelt integrierte Hochvolt-Schaltungen für die Ansteuerung elektrostatisch arbeitender Mikroaktoren und Mikroaktorarrays. Im Besonderen wird auf die Gesichtspunkte der Treiberschaltungen von Torsionsspiegelarrays eingegangen. Es werden verschiedene Verstärkerbetriebsarten und Schaltungsvarianten hinsichtlich der Ansteuerung kleiner kapazitiver Lasten beurteilt. Für die hocheffiziente Signalübertragung zwischen Low-Side und High-Side in geschalteten Hochvolt-Verstärkern wird ein neuer dynamischer Level-Shifter vorgestellt. Anhand eines gebondeten Mikroelektronik-Mikromechanik-Aufbaus für ein Hadamard-Transformations-Spektrometer werden die speziellen Aspekte des Elektronikentwurfs für ein System-in-Package aufgezeigt. Als Entwurfsgrundlage wird ein Überblick über die wesentlichen Isolationstechnologien für integrierte Hochvolt-Schaltungen und über die Bauelementemodellierung in einer SOI-Technologie ausgearbeitet. Außerdem werden die Vor- und Nachteile der wichtigsten Antriebsprinzipien von Mikroaktoren zusammengefasst.

Large on-chip bandwidths required for high performance electronic chips will render optical components essential parts of future on-chip interconnects. Silicon photonics enables highly integrated photonic integrated circuit (PIC) using CMOS compatible process. In order to maximize the bandwidth density and design flexibility of PICs, vertical integration of electronic layers and photonics layers is strongly preferred. Comparing deposited silicon, single crystalline silicon offers low material absorption loss and high carrier mobility, which are ideal for multi-layer silicon PIC. Three different methods to build multi-layer silicon PICs based on single crystalline silicon are demonstrated in this dissertation, including double-bonded silicon-on-insulator (SOI) wafers, transfer printed silicon nanomembranes, and adhesively bonded silicon nanomembranes. 1-to-12 waveguide fanouts using multimode interference (MMI) couplers were designed, fabricated and characterized on both double-bonded SOI and transfer printed silicon nanomembrane, and the results show comparable performance to similar devices fabricated on SOI. However, both of these two methods have their limitations in optical interconnects applications. Large and defect-free silicon nanomembrane fabricated using adhesive bonding is identified as a promising solution to build multi-layer silicon PICs. A double-layer structure constituted of vertically integrated silicon nanomembranes was demonstrated. Subwavelength length based fiber-to-chip grating couplers were used to couple light into this new platform. Three basic building blocks of silicon photonics were designed, fabricated and characterized, including 1) inter-layer grating coupler based on subwavelength nanostructure, which has efficiency of 6.0 dB and 3 dB bandwidth of 41 nm, for light coupling between layers, 2) 1-to-32 H-tree optical distribution, which has excess loss of 2.2 dB, output uniformity of 0.72 dB and 3 dB bandwidth of 880 GHz, 3) waveguide crossing utilizing index-engineered MMI coupler, which has crossing loss of 0.019 dB, cross talk lower than -40 dB and wide transmission spectrum covering C-band and L-band. The demonstrated integration method and silicon photonic devices can be integrated into the CMOS back-end process for clock distribution and global signaling. / text

Σκοπόςτης παρούσας εργασίαςείναι αρχικά η δημιουργία ενός μοντέλου με τα χαρακτηριστικά ενός μονωτήρα υψηλής τάσης.Το μοντέλο αυτό θα ενσωματωθεί στο μοντέλο μιας γραμμής υψηλής τάσης διπλού κυκλώματος των 400kV, για να υπολογιστούν οι επαγόμενες υπερτάσεις σε παρακείμενο υπέργειο αγωγό μεταφοράς υδρογονανθράκων. Τα παραπάνω επιτυγχάνονταιμε τη μοντελοποίηση πραγματικών πυλώνων και γραμμών του Ελληνικού συστήματος μεταφοράς καθώς και υπέργειου αγωγού υδρογονανθράκων.Η εξομοίωση υλοποιείται μέσω του προγράμματος ATP-EMTP. Για τον σχεδιασμό του μοντέλου του μονωτήρα χρησιμοποιήθηκε το μοντέλοVolt-TimeCurve. Επίσης χρησιμοποιήθηκαν δύο τύποι κεραυνού για τις προσομοιώσεις, για γρήγορο και αργό σήμα, με τιμές ρεύματος 100kA. Για το γρήγορο, οι τιμές χρόνων μετώπου και ουράς 1.2/50μs και για το αργό σήμα 10/350μs. Σε αυτή τη διπλωματική εργασία υπάρχουν 8 κεφάλαια. Στα πρώτα 5 κεφάλαια έγινε μια παράθεση πληροφοριών και θεωρητική προσέγγιση όλων των επιμέρους τμημάτων που συνθέτουν τη συνολική διάταξη της μελέτης. Στο 5ο κεφάλαιο γίνεται λεπτομερής αναφοράστο πρόγραμμα ATP-EMTP στο οποίο πραγματοποιήθηκε η προσομοίωση.Στο 6o κεφάλαιο γίνεται η μοντελοποίηση όλων των στοιχείων της διάταξης και η ενσωμάτωσή τους στοATP-EMTP. Στο 7ο κεφάλαιο γίνεται παρουσίαση του μοντέλου του μονωτήρα που αναπτύχθηκε και στο 8ο κεφάλαιο γίνεται παρουσίαση των αποτελεσμάτων της προσομοίωσης και εξάγονται κάποια συμπεράσματα σχετικά με τη διάταξη. / The purpose of this paper is , at first, to create a model with the features of a high voltage insulator. This model will be incorporated into the model of a high-voltage line double circuit 400kV, to calculate the induced transients in adjacent aboveground pipeline hydrocarbons. These goals are achieved by modeling real pillars and lines of Greek transport system and overground pipeline hydrocarbons. The simulation is implemented through the ATP-EMTP. The model Volt-Time Curve is used for the modeling of the insulator. Also, two types of lightning are used for the simulations, for fast and slow signal, with current values 100kA. For fast signal, the prices of front and tail time are 1.2 / 50ms and for slow signal 10 / 350ms. In this thesis there are 8 chapters. In the first five chapters was a quote and information theoretical approach to all individual parts that make up the overall layout of the study. The 5 chapter is a detailed reference to the ATP-EMTP program which performed the simulation. The 6 chapter is the modeling of all elements of the layout and the incorporation into the ATP-EMTP. In chapter 7 we present the model of the insulator developed and in chapter 8 we present the simulation results and draw inferences about the layout.

Transition metal and related compounds have been extensively studied over the past several decades. These investigations revealed a wide range of behavior, encompassing colossal magnetoresistance (CMR), high-TC superconductivity, and magnetic semiconductivity, all of which continue to present fundamental challenges to the understanding of such phenomena. There is, however, a close correlation between such characteristics and the appearance of magnetic order. This correlation underlies the present study, which focuses on the magnetic and transport behavior of various Manganese (Mn), Iron (Fe) and Cobalt (Co) containing materials, with particular emphasis on the nature of the magnetic order they display and the critical exponents that characterize the accompanying phase transition. The magnetic and transport properties of two specific systems will be covered: first various doped manganites from the series (La,Pr)1-x(Ca,Ba)xMnO3, and second the magnetic semiconductors Fe0.8Co0.2Si and Ga0.98Mn0.02As. In the manganites, the influence of doping on; (i) the evolution of the metal-insulator transition (MIT) with composition; (ii) the universality class of the magnetic critical behavior associated with the paramagnetic to ferromagnetic transition, which occurs in the vicinity of a MIT with which CMR is associated; (iii) the mechanisms underlying ferromagnetism across the MIT; (iv) the correlation between the appearance of a Griffiths-like phase and CMR, and (v) the origin of Griffiths-like phase have been investigated. Four different systems have been studied: La1-xCaxMnO3 (0.18 ≤ x ≤ 0.27), La1-xBaxMnO3 (x ≤ 0.33), (La1-yPry)0.7Ca0.3Mn16/18O3 (y ≤ 0.85), and Pr1-xCaxMnO3 (x = 0.27, 0.29). In Fe0.8Co0.2Si and Ga0.98Mn0.02As, the scaling between magnetization and conductivity has been the subject of ongoing debate. In bulk Fe0.8Co0.2Si, a novel scaling between the anomalous Hall effect (AHE) and the magnetization enables the anomalous Hall coefficient to be accurately determined. In turn, this enables the universality class for the transition to ferromagnetism to be established independently from the anomalous Hall conductivity. In an epitaxial (metallic) Ga0.98Mn0.02As microstructure, the magnetization has been indirectly determined from the AHE. Subsequent analysis yields magnetic critical exponents consistent with the Mean-Field model, direct support for which had previously been lacking.

Volcanic eruptions are powerful natural events which impact strongly on society. As human populations grow and expand into volcanically active areas, their exposure and vulnerability to volcanic hazards is also increasing. Of all volcanic hazards, ashfall is the most likely to impact lifelines because of the large areas affected. The widespread dispersal of ash can cause large-scale disruption of vital infrastructure services, aviation, and primary production. Electric power supply is arguably the most crucial of modern infrastructure systems, especially considering the dependence of other sectors on electricity to maintain functionality. During and immediately after ashfalls, electric power systems are vulnerable to a number of impacts, but disruption from volcanic ash-induced insulator flashover (unintended, disruptive electrical discharge) is most common. This thesis investigates the vulnerability of electric power systems to volcanic ashfall by examining impacts to the different sectors of the modern power system and exploring appropriate mitigation strategies. Analogue laboratory trials using a pseudo (synthetic) ash are undertaken to verify the environmental, volcanological and electrical parameters that most affect electrical conductivity and therefore the flashover mechanism in these experiments. While dry ash is highly resistant to the flow of electric current, increasing moisture content, soluble salt load, and compaction (bulk density) will reduce this resistance and, in turn, increase the potential for flashover. Volcanic ash is an acute form of airborne pollution for areas downwind of active volcanoes. Results from laboratory experiments in this thesis suggest that insulator pollution (volcanic ash) performance (dielectric strength) is primarily dictated by (1) the conductivity of the ash, and (2) insulator material, profile (shape) and dimensioning. Composite polymer insulators tested herein effectively minimise sinusoidal leakage current and partial discharge activity and also exhibit higher pollution performance when compared to ceramic equivalents. Irrespective of insulator material, however, the likelihood of flashover increases significantly once the bottom surface of suspension insulator watersheds become contaminated in wet ash. The thesis investigates the vulnerability (hazard intensity/damage ratio) of electric power systems to volcanic ashfall hazards. Identification, analysis, and reduction of the risk of ashfall impacts to power networks is explored as a part of holistic volcanic risk assessment. The findings of the thesis contribute to the readiness, response and recovery protocols for large electric power systems in volcanic disasters; which directly affects the functional operation and economics of industrial and commercial society.

The objective of this research is to develop an understanding of the trade-offs between performance and reliability in sub 100-nm silicon-on-insulator (SOI) CMOS technologies. Such trade-offs can be used to demonstrate high performance reliable circuits in scaled technologies. Several CMOS reliability concerns such as hot-carrier stress, ionizing irradiation damage, RF stress, temperature effects, and single-event effects are studied. These reliability mechanisms can cause temporary or permanent damage to the semiconductor device and to the circuits using them. Several improvements are made to the device layout and process to achieve optimum performance. Parasitics are shown to play a dominant role in the performance and reliability of sub 100-nm devices. Various techniques are suggested to reduce these parasitics, such as the use of the following: a) optimum device-width, b) optimum gate-finger to gate-finger spacing, c) optimum source/drain metal contact spacing, and d) floating-body/body-contact. The major contributions from this research are summarized as follows: 1) Role of floating-body effects on the performance and reliability of sub 100-nm CMOS-on-SOI technologies is investigated for the first time [1], [2]. It is demonstrated through experimental data and TCAD simulations that floating-body devices have improved RF performance but degraded reliability compared to body-contacted devices. 2) Floating-body effects in a cascode core is studied. Cascode cores are demonstrated to achieve much larger reliability lifetimes than a single device. A variety of cascode topologies are studied to achieve the trade-o s between performance and reliability for high-power applications [2]. 3) The use of body-contact to modulate the performance of devices and single-poledouble- throw (SPDT) switches is studied. The SPDT switch performance is shown to improve with a negative body-bias. 4) The impact of device width on the RF performance and reliability is studied. Larger width devices are shown to have greater degradation, posing challenging questions for RF design in strained-Si technologies [3]. 5) A novel study showing the e ect of source/drain metal contact spacing and gate-finger to gate-finger spacing on the device RF performance is carried out. Further, the impact of above on the hot-carrier, RF stress, and total-dose irradiation tolerance is studied [3], [4]. 6) Latchup phenomenon in CMOS is shown to be possible at cryogenic temperatures (below 50 K), and its consequences are discussed [5]. 7) A time-dependent device degradation model has been developed in technology computer aided design (TCAD) to model reliability in CMOS and SiGe devices. 8) The total-dose irradiation tolerance and hot-carrier reliability of 32-nm CMOSon- SOI technology is reported for the first time. The impact of HfO2 based gate dielectric on the performance and reliability is studied [6]. 9) The impact of technology scaling from 65-nm to 32-nm on the performance and reliability of CMOS technologies is studied [6]. 10) Cryogenic performance and reliability of 45-nm nFETs is investigated. The RF performance improves significantly at 77 K. The hot-carrier device reliability is shown to improve at low temperatures in short-channel CMOS technologies.