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<p>The computer program developed by T.B. Remple for the analysis of PiN photodiodes has been modified to handle Schottky barrier cases. The fundamental physics involved in the original model is summarized and the theories for a metal-semiconductor interface are presented. The boundary values for n, p, and ψ are then defined in such a way that ψ (x) would be in agreement with the thermionic-diffusion theory. An equivalent circuit approach is used to determine the RC response of the photodetector. While the modified version of the computer model provides very detailed analysis of the device, it is also very expensive to run. A simplified model is therefore employed for the design process. The objective is to design an Au-nGe photodiode with a risetime less than 50 psecs. The set of optimum design parameters obtained with the simplified model is then taken as the input to the modified version of Remple's program for further analysis. The theoretical risetime of the optimum design is found to be about 45 psecs.</p> / Thesis / Master of Engineering (ME)

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<p>The continuous reduction of feature size in silicon-based electronic integrated circuits (ICs) is accompanied by devastating propagation delay time and power consumption that have become known as the “Interconnect Bottleneck”. Optical interconnection is a proposed solution that is poised to revolutionize the data transmission both within and between ICs. By forming the optical transmission and functional elements from silicon, they can be monolithically incorporated with standard ICs using the established CMOS (Complementary Metal Oxide Semiconductor) infrastructure with minimal incremental cost. A key required functional element is the photodetector, which provides optical-toelectrical conversion of signals. In this thesis, a method of achieving such conversion is explored, which uses the optical absorption at 1550 nm wavelengths provided by lattice defects. The physics governing defect-enhanced silicon waveguide photodiode operation is described, and a device model is used to verify the posited detection process and propose design improvements. The model was used to design a novel photodetector structure using a waveguide formed by the LOCOS (LOCal Oxidation of Silicon) process with a poly-silicon self-aligned contact. The fabricated device exhibited a responsivity of 47 mA/W, providing an improvement over previous devices of similar dimensions, although were ultimately limited by the quality of the poly-silicon/silicon interface. A sub-micron waveguide photodiode fabrication process using electron-beam lithography was developed, which produced photodiodes with responsivities of 490 mA/W. This process was used to integrate photodiodes onto micro-ring resonators, which exhibit resonant enhanced photocurrent. The physics of this enhancement were explored, and found to produce a 50 μm long resonant photodiode of responsivity equal to that of a 3 mm long non-resonant photodiode. Lastly, the integration of such sub-micron photodiodes as functioning power monitors throughout photonic circuits was demonstrated as a means to characterize and tune micro-rings during operation.</p> / Doctor of Philosophy (PhD)

Cette thèse a pour but la recherche de Nouvelle Physique dans les événements à quatre quarks top en utilisant les données collectées dans les collisions proton-proton par l'expérience ATLAS au LHC. L'ensemble des données correspond à celui enregistré pendant tout 2011 à √s = 7 TeV et une partie de l'année 2012 à √s = 8 TeV. L'analyse est concentrée sur un état final avec deux leptons (des électrons et des muons) avec la même charge électrique. Cette signature est expérimentalement privilégiée puisque la présence de deux leptons avec le même signe dans l'état final permet de réduire le bruit du fond qui vient des processus du Modèle Standard. Les résultats sont interprétés dans le contexte d'une théorie effective à basse énergie, qui suppose que la Nouvelle Physique peut se manifester à basse énergie comme une interaction de contact à quatre tops droits. Dans ce contexte, cette analyse permet de prouver un type de théorie au delà du Modèle Standard qui, à basse énergie, peut se manifester de cette manière. Les bruits du fond pour cette recherche ont été estimés en utilisant des échantillons simulés et des techniques axées sur les données. Différentes sources d'incertitudes systématiques ont été considérées. La sélection finale des événements a été optimisée en visant à minimiser la limite supérieure attendue sur la section efficace de production des quatre tops si aucun événement de signal n'est trouvé. La région du signal a été ensuite examinée à la recherche d'un excès d'événement en comparaison avec le bruit du fond prévu. Aucun excès d'événement n'a été observé, et la limite supérieure observée sur la section efficace de production de quatre quarks top a été calculée. Ceci a permis de calculer la limite supérieure sur la constante de couplage C=2 du modèle. Une limite supérieure sur la section efficace de production de quatre tops dans le Modèle Standard a été aussi calculée dans l'analyse a √s = 8 TeV. En plus de l'analyse physique du signal de quatre tops, des études concernant le système d'étalonnage LASER du calorimètre Tile ont été présentées. Ces études sont liées au système des photodiodes utilisé pour mesurer l'intensité de la lumière dans le système LASER. / This thesis presents the search for New Physics in events with four top quarks using the data collected in proton-proton collisions by the ATLAS experiment at the LHC. The dataset corresponds to the one taken during all 2011 at √s = 7 TeV and a part of 2012 at √s = 8 TeV. The analysis focuses on a final state with two leptons (electrons and muons) with the same electric charge. This signature is experimentally favored since the presence of two same-sign leptons in the final state allows to reduce the background coming from Standard Model (SM) processes. The results are interpreted in the context of a low energy effective field theory, which assumes that New Physics at low energy can manifest itself as a four right-handed top contact interaction. In this context, this analysis allows testing a class of beyond-the-SM (BSM) theories which at low energy can manifest in this way. Backgrounds to this search have been estimated using simulated samples and data-driven techniques. Different sources of systematic uncertainties have been also considered. The final selection of events has been optimized by aiming at minimizing the expected upper limit on the four tops production cross-section in case of no signal events found. The signal region is then analyzed by looking for an excess of events with respect to the predicted background. No excess of events has been observed, and the observed upper limit on the four tops production cross-section has been computed. This limit is then translated to an upper limit on the coupling strength C=2 of the model. An upper limit on the four tops production cross-section in the SM has been also computed in the analysis performed at √s = 8 TeV. In addition to the physics analysis of the four tops signal, some studies about the LASER calibration system of the ATLAS Tile calorimeter are presented. In particular, they are related to the photodiodes system used to measure the intensity of the laser light in the LASER system.

Dans le cadre de la préparation de l'expérience L3 sur LEP au CERN, cette thèse présente une étude d'une portion du calorimètre électromagnétique formée de 100 cristaux de germanate de bismuth (B.G.O.). La lumière de scintillation de chacun des cristaux est lue par des photodiodes de grande surface (2 X 1.5 cm2).<br />L'electronique asociée aux photodiodes est étudiée de façon détaillée depuis les préamplificateurs de charge (responsabilité spécifique du groupe de lyon) jusqu'aux convertisseurs analogique-digital.<br />En particulier, le rapport signal sur bruit est discuté en relation avec les performances du détecteur à basse énergie. Le bruit électronique obtenu par cristal est de l'ordre de 1300 électrons, soit 1.5 MeV B.G.O. Il comporte une partie intrinsèque et une forte partie corrélée qui joue un rôle important à basse énergie dans la dégradation de la résolution en énergie. L'ensemble des résultats obtenus a permis d'atteindre le stade final de la construction du calorimètre électromagnétique.

L'intégration de composants optiques actifs dans des microsystèmes est étudiée à partir d'approches génériques, fondées sur les procédés de fabrication collective de la microélectronique. La première approche étudiée exploite la technologie CMOS pour démontrer la faisabilité de nouvelles fonctions de détection associant un détecteur silicium et une fonction optique passive, l'ensemble permettant l'intégration de circuits de traitement de signal. Nous montrons dans ce contexte un nouveau principe de détecteur de déphasage reposant sur l'intégration d'un réseau de diffraction à la surface d'une photodiode. Une seconde approche vise à étudier les potentialités des cristaux photoniques pour le développement de diodes laser compatibles avec une intégration planaire de fonctions optiques actives ou passives. L'étude réalisée dans le cadre de ce mémoire porte sur une diode laser à ruban comportant un miroir à cristal photonique unidimensionnel. Les performances du miroir en fonction des paramètres technologiques sont modélisées et un procédé de fabrication est proposé.

This dissertation describes the development of III-nitride (III-N) bipolar devices for optoelectronic and electronic applications. Research mainly involves device design, fabrication process development, and device characterization for Geiger-mode gallium nitride (GaN) deep-UV (DUV) p-i-n avalanche photodiodes (APDs), indium gallium nitride (InGaN)/GaN-based violet/blue laser diodes (LDs), and GaN/InGaN-based npn radio-frequency (RF) double-heterojunction bipolar transistors (DHBTs). All the epitaxial materials of these devices were grown in the Advanced Materials and Devices Group (AMDG) led by Prof. Russell D. Dupuis at the Georgia Institute of Technology using the metalorganic chemical vapor deposition (MOCVD) technique. Geiger-mode GaN p-i-n APDs have important applications in DUV and UV single-photon detections. In the fabrication of GaN p-i-n APDs, the major technical challenge is the sidewall leakage current. To address this issue, two surface leakage reduction schemes have been developed: a wet-etching surface treatment technique to recover the dry-etching-induced surface damage, and a ledged structure to form a surface depletion layer to partially passivate the sidewall. The first Geiger-mode DUV GaN p-i-n APD on a free-standing (FS) c-plane GaN substrate has been demonstrated. InGaN/GaN-based violet/blue/green LDs are the coherent light sources for high-density optical storage systems and the next-generation full-color LD display systems. The design of InGaN/GaN LDs has several challenges, such as the quantum-confined stark effect (QCSE), the efficiency droop issue, and the optical confinement design optimization. In this dissertation, a step-graded electron-blocking layer (EBL) is studied to address the efficiency droop issue. Enhanced internal quantum efficiency (ɳi) has been observed on 420-nm InGaN/GaN-based LDs. Moreover, an InGaN waveguide design is implemented, and the continuous-wave (CW)-mode operation on 460-nm InGaN/GaN-based LDs is achieved at room temperature (RT). III-N HBTs are promising devices for the next-generation RF and power electronics because of their advantages of high breakdown voltages, high power handling capability, and high-temperature and harsh-environment operation stability. One of the major technical challenges to fabricate high-performance RF III-N HBTs is to suppress the base surface recombination current on the extrinsic base region. The wet-etching surface treatment has also been employed to lower the surface recombination current. As a result, a record small-signal current gain (hfe) > 100 is achieved on GaN/InGaN-based npn DHBTs on sapphire substrates. A cut-off frequency (fT) > 5.3 GHz and a maximum oscillation frequency (fmax) > 1.3 GHz are also demonstrated for the first time. Furthermore, A FS c-plane GaN substrate with low epitaxial defect density and good thermal dissipation ability is used for reduced base bulk recombination current. The hfe > 115, collector current density (JC) > 141 kA/cm², and power density > 3.05 MW/cm² are achieved at RT, which are all the highest values reported ever on III-N HBTs.

[Truncated abstract] Infrared photodiodes fabricated in HgCdTe achieve near-ideal performance, however, in comparison with other semiconductors, processing techniques for HgCdTe are expensive and have relatively low yields. Reactive-ion-etching (RIE) in a H2⁄CH4 gas mixture, a process primarily used for material removal, will cause p-to-n type conversion in HgCdTe. It has been shown, by several groups, that infrared photodiodes fabricated with a process technology based on RIE p-to-n type-conversion achieve high yields with state-of-the-art performance. For this technology to be accepted RIE formed n-on-p photodiodes must demonstrate junction stability under normal operating conditions. Along with a stable junction, a compatible passivation technology that is able to withstand processing and operation temperatures is required. This thesis investigates the RIE p-to-n type-conversion mechanism in HgCdTe with the aim of demonstrating bake stable RIE formed junctions, and gaining an insight to the processes by which RIE type-conversion occurs. In pursuing these aims, two complimentary objectives were required, namely, the development of a passivation technology compatible with RIE formed junctions, and the development of a detailed I-V/Rd-V model for HgCdTe photodiodes. As a result of these objectives, this thesis presents a double-layer ZnS on CdTe passivation technology with which stable RIE-formed n-on-p junctions in HgCdTe are demonstrated. Using this process technology, mid-wave infrared (MWIR) HgCdTe photodiodes have been fabricated and subjected to a bake in vacuum at 80°C for 175 hours, after which there is negligible degradation in the zero-bias Dynamic-Resistance Area product (RoA) from the pre-bake values