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Packaging designs for ultraviolet light emitting diodesHabtemichael, Yishak Tekleab 14 August 2012 (has links)
Aluminum Gallium Nitride (AlGaN) / Gallium Nitride (GaN) based deep ultraviolet (DUV) light emitting didoes (LEDs) with emission wavelengths between 200-280 nm enable key emerging technologies such as water/air purification and sterilization, covert communications and portable bio-agent detection/identification systems for homeland security, and surface and medical device sterilization. These devices produce a large amount of undesired heat due to low quantum efficiencies in converting electrical input to optical output. These low efficiencies are attributed to difficulties in the growth&doping of AlₓGa₁₋ₓN materials and UV absorbing substrates leading to excessive joule heating, which leads to device degradation and a spectral shift in the emission wavelength. With this regard, effective thermal management in these devices depends on the removal of this heat and reduction of the junction temperature. This is achieved by decreasing the package thermal resistance from junction-to-air with cost-effective solutions. The use of heat sinks, thermal interface materials, and high conductivity heat spreaders is instrumental in the reduction of the overall junction-to-air thermal resistance.
This thesis work focuses on thermal modeling of flip-chip packaged deep UV LEDs to gain a better understanding of the heat propagation through these devices as well as the package parameters that have the biggest contributions to reducing the overall thermal resistance. A parametric study focusing on components of a lead frame package is presented to ascertain the thermal impacts of various package layers including contact metallizations, thermal spreading sub-mounts, and thermal interface materials. In addition the use of alternative thermal interface materials such as phase change materials and liquid metals is investigated experimentally.
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Implantable Biosensors for Neural Imaging: A Study of Optical Modeling and Light SourcesMunro, Elizabeth Alice 15 February 2010 (has links)
We aim to develop an implantable, optical neural imaging device by fabricating lasers and photodiodes onto a gallium arsenide substrate. Some studies suggest that lasers exhibit higher noise than light emitting diodes (LEDs) due to coherence effects – my studies aim to quantify this noise and to guide device development. To this end, I developed a model of a fluorescent imaging device which agreed with experiment. Noise analysis performed in phantom showed that laser sources exhibit temporal and spatial noise up to 10x higher than LED sources, and in vivo noise analysis also demonstrated this trend. I studied a neural injury model called cortical spreading depression in vitro in mouse brain slices and in vivo in the rat brain using laser and LED sources. Signal magnitudes in vitro are on the order of 10% and in vivo results are inconclusive. Future work will aim to reduce coherence related noise.
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Implantable Biosensors for Neural Imaging: A Study of Optical Modeling and Light SourcesMunro, Elizabeth Alice 15 February 2010 (has links)
We aim to develop an implantable, optical neural imaging device by fabricating lasers and photodiodes onto a gallium arsenide substrate. Some studies suggest that lasers exhibit higher noise than light emitting diodes (LEDs) due to coherence effects – my studies aim to quantify this noise and to guide device development. To this end, I developed a model of a fluorescent imaging device which agreed with experiment. Noise analysis performed in phantom showed that laser sources exhibit temporal and spatial noise up to 10x higher than LED sources, and in vivo noise analysis also demonstrated this trend. I studied a neural injury model called cortical spreading depression in vitro in mouse brain slices and in vivo in the rat brain using laser and LED sources. Signal magnitudes in vitro are on the order of 10% and in vivo results are inconclusive. Future work will aim to reduce coherence related noise.
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Series Resonant Inverter for Multiple LED LampsChang, Yun-Hao 30 July 2010 (has links)
This thesis proposes a high efficiency driving circuit for multiple light emitting diode (LED) lamps with dimming feature. The driving circuit consists of essentially a high-frequency half-bridge series resonant inverter with multiple output transformers, on which primary windings are connected in series, while secondary sides are loaded by LED lamps rated at different powers with different turn ratios. By controlling the frequency of the inverter, the resonant current as well as the lamp current can be regulated simultaneously. On the other hand, the LED lamps can be dimmed individually by the associated dimming switches with integral cycle control. The tactful circuit ensures a high circuit efficiency owing to less conducting losses and zero-voltage switching (ZVS) operation of the active power switches of the inverter and zero current switching (ZCS) operation of the dimming switches. Two prototype circuits designed for 60 W three RGB LED lamps and 50 W five white light LED lamps have been built and tested to verify the analytical predictions. Experimental results demonstrate that the driving circuit can operate the LED lamps at a high efficiency with a wide dimming range. The lamp power can be dimmed to 10% with frequency control, while whole dimming range can be achieved with integral cycle control. The circuit efficiency with integral cycle control is relatively higher than that with frequency control. The measured efficiencies for the two designed circuit are 93% and 90%, respectively, under the rated powers.
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Characterizing LED with Time-Resolved Photo-Luminescence and Optical Beam Induced Current ImagingWu, Shang-jie 17 February 2011 (has links)
With rapid development of light emitting device, the detection techniques of semiconductor are more and more important, which include time-resolved photoluminescence (TRPL) and optical beam induced current (OBIC) microscopy. In this thesis, we realize the carrier behaviors of active region with multiple quantum wells (MQWs) by these microscopies, and the samples are light emitting diodes (LEDs). However, PL intensity of LEDs increase but OBIC not due to external field compensates, on the other hand, reducing PL lifetime indicates the response time of device shorter with higher reverse bias.
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Light Emitting Diodes of Non-fully Conjugated Coil-like and Fully Conjugated Rigid-rod Heterocyclic Aromatic Homopolymers with Push-pull PendantsWen, Hong-ta 12 July 2008 (has links)
ABSTRACT
Light emitting diodes of non-fully conjugated coil-like homopolymers and fully conjugated rigid-rod homopolymers with electron withdrawing or donating group were studied. A series of Poly[2,2-(m-2-X-phenylene)-4-4¡A-hexafluoroisopropane- bibenzoxazoles] (6F-PBO-X, with X = amine, hydrogen and nitro) and poly-p-(2-X- phenylene)-benzobisoxazole (PBO-X, with X = amine, hydrogen and nitro) were synthesized for light emitting diode applications to observe electroluminescence emission affected by electron withdrawing or donating group.
All polymers were fabricated identically to form bi-layer light emitting diodes. In the devices, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonite)(PEDOT:PSS) was applied to be a hole transport layer; indium tin oxide (ITO) was the anode; and aluminum was the cathode.
Devices of the non-fully conjugated coli-like polymers (6F-PBO-X) and the fully conjugated rigid-rod polymers (PBO-X) all showed threshold voltage about 4 V. In the electroluminescence (EL) spectrum, the maximum intensity of non-fully conjugated polymer (6F-PBO-X) with amine (-NH2), hydrogen (-H) or nitro (-NO2) functional group was at 499 nm, 505 nm and 515 nm, respectively, showing a 20 nm wavelength shift. From ¡VNH2, -H and ¡VNO2 groups, their Commission International de l`Eclairage (C. I. E.) coordinates were (0.30, 0.46), (0.34, 0.45) and (0.40, 0.46), respectively. The EL maximum intensity for fully conjugated rigid-rod polymer PBO-X was at 521 nm (-NH2) and 474 nm (-NO2) showing a 50 nm wavelength shift. Their C. I. E. coordinates were (0.42, 0.45) and (0.25, 0.38), respectively. This is attributed to the fully conjugated, collinear, coplanar, rigid-rod polymers (PBO-X) backbone readily affected by the push-pull functional groups showing a large red shift.
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Designing new architectures for controlling solid state properties of conjugated polymersNambiar, Rakesh R. 01 April 2010 (has links)
Conjugated polymers and oligomers are great materials for use in the next generation devices namely organic field effect transistors, light emitting diodes and polymeric solar cells. Apart from having the potential for developing power-efficient, flexible, robust and inexpensive devices, conjugated polymers can also be tuned by molecular design to optimize device characteristics. One key problem for the full commercial exploitation of conjugated polymers is that the charge carrier mobility of the state-of-the-art polymer semiconductors is much lower than required for many applications. The performance of the devices is strongly dependent on the molecular structure and supermolecular assembly of the conjugated polymer chains. This thesis covers our attempts to design molecular structure to control and improve the solid state properties of conjugated polymers.
The relative placement of side chains along the backbone has a great influence on the solid state ordering of conjugated polymers. Poly(2,5-disubstituted-1,4-phenylene ethynylene)s (PPE)s, an important class of conjugated polymers, are generally synthesized by Pd-catalyzed coupling polymerizations of appropriately substituted diiodo and diethynyl benzenes (i.e., A-A and B-B type monomers). In asymmetrically substituted PPEs, this results in an irregular substitution pattern of the side chains along the polymer backbone. We report a new synthetic approach to prepare regioregular unsymmetrically substituted PPEs by polymerization of 4-iodophenylacetylenes (i.e., A-B type monomer). We provide a detailed discussion of various approaches to the synthesis of PPEs with different regioregularities and provide a description of the differences between regioregular and regiorandom analogs.
The effect of regioregularity becomes even more important when the two side chains are very dissimilar or amphiphilic. We explore the effect of relative placement hydrophobic (dodecyloxy) / hydrophilic (tri(ethylene glycol) and hydrophobic (dodecyloxy)/fluorophilic (fluoroalkyl) side chains along the poly(1,4-phenylene ethynylene) backbone. We found that the regioregular substitution of the polymer backbone provides a structure in which the side chains segregate to afford a Janus-type structure. The regioregular polymer chains pack more densely in a monolayer at the air-water interface, and pack into a bilayer in the solid state to form a highly crystalline material.
Pentacenes are very important organic molecules for use as semiconductor in oFETs due to their low band gap and high field effect mobility. One approach to reduce the bandgap of a polymeric system and improve performance is to include low bandgap small molecules into the conjugated backbone. A new copolymer system consisting of pentacene and terthiophene was developed and its optical and electronic properties along with its stability were evaluated.
We report the use of ultrasonication of P3HT as a novel operationally-simple process to significantly improve the field effect mobility of P3HT-based FETs, thereby potentially eliminating the need for dielectric surface modifications or further processing of the device. Investigation of the sonicated polymer samples by number of characterization techniques indicates that ultrasonication leads to aggregation and ordering of the P3HT chains resulting in increase in the mobility.
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Alkynylated acenothiadiazoles and N-heteroacenes: synthesis, functionalization, and study of the optical properties for optoelectronic and sensory materialsBrombosz, Scott M. 15 June 2010 (has links)
For organic electronic device applications materials are needed which display good charge carrier mobility, good processability, and stability towards oxygen and moisture. Alkynylated N-Heteroacenes fulfill many of these requirements. Substitution with alkyne groups as well as the introduction of the pyrazine subunit both inhibits oxidative degradation at sensitive position in the molecules. Additionally the trialkylsilylethynyl group aides in directing the packing motif as well as vastly increases the solubility over unsubstituted analogues.
A requisite precursor in the synthesis of alkynylated N-heteroacenes is alkynylated acenothiadiazoles. These thiadiazoles display interesting photophysical properties and can be functionalized to produce a wide range of properties in closely related materials. The acenothiadiazoles themselves have potential applications as an N-type semiconductor. Optical gaps and calculated HOMO-LUMO gaps show that these molecules, when compared to known N-type materials, should be easily injected with electrons. Additionally the crystal packing of these compounds shows favorable π-orbital overlap which should provide excellent charge carrier mobilities.
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InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μmHuang, Yong 02 November 2010 (has links)
Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions. This dissertation describes the design, growth, and performances of long wavelength LETs and TLs based on InAlGaAs/InP material system. First, the doping behaviors of zinc (Zn) and carbon (C) in InAlGaAs layers for p-type doping were investigated. Using both dopants, the N-InP/p-In0.52(AlxGa1-x)0.48As/N-In0.52Al0.48As LETs with InGaAs quantum wells (QWs) in the base demonstrate both light emission and current gains (β). The device performances of Zn- and C-doped LETs have been compared, which is explained by a charge control analysis involving the quantum capture and recombination process in the QWs. A TL based on a C-doped double heterostructure (DH-TL) with single QW was designed and fabricated. The device lases at 77 K with a threshold current density (Jth) of 2.25 kA/cm2, emission wavelength (λ) at ~1.55 µm, and β of 0.02. The strong intervalence band absorption (IVBA) is considered as the main intrinsic optical loss that prohibits the device from lasing at room temperature. Based on a threshold condition analysis taking into account the strong IVBA, it is found that room-temperature lasing of a DH-TL is achieved only when the base thickness and doping level are within a specific narrow range and improved performance is expected in a separate confinement heterostructure (SCH) TL.
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Simulation of current crowding mitigation in GaN core-shell nanowire led designsConnors, Benjamin James 07 July 2011 (has links)
Core-shell nanowire LEDs are light emitting devices which, due to a high aspect
ratio, have low substrate sensitivity, allowing the possibility of low defect density GaN
light emitting diodes. Current growth techniques and physical non-idealities make the
production of high conductivity p-type GaN for the shell region of these devices difficult.
Due to the structure of core-shell nanowires and the difference in conductivity between ntype and p-type GaN, the full junction area of a core-shell nanowire is not used
efficiently. To address this problem, a series of possible doping profiles are applied to
the core of a simulated device to determine effects on current crowding and overall
device efficiency. With a simplified model it is shown that current crowding has a
possible dependence on the doping in the core in regions other than those directly in
contact with the shell. The device efficiency is found to be improved through the use of
non-constant doping profiles in the core region with particularly large efficiency
increases related to profiles which modify portions of the core not in contact with the
shell
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