Thermische TaN ALD mit den Präkursoren TBTDET und TBTEMT, NH3 als zweiten Reaktanten und Ar als inertes Spülgas ist untersucht worden. Als Messverfahren zur Bewertung ist zeitlich aufgelöste in-situ spektroskopische Ellipsometrie mit einer Datenerfassungsrate von 0,86 Datenpunkte/s, sowie in-vacuo XPS und AFM verwendet worden. Es konnten sehr glatte homogene geschlossene TaN-Dünnschichten mit einem Ta:N-Verhältnis von 0,6, -Verunreinigungen von ca. 5 at.% (TBTDET) bzw. 9 at.% (TBTEMT) und einem GPC von ca. 0,6 nm/Zyklus im linearen Wachstumsbereich hergestellt werden. Eine O3-Vorbehandlung einer SiO2-Oberfläche beschleunigt die initiale Phase der TaN-Abscheidung. Die abgeschiedenen TaN-Schichten zeigen sich sehr reaktiv auf O2.:1. Einleitung 1 I. Theorie 4 2. Anwendungsfelder von TaN & Ru-ALD-Dünnschichten 5 2.1. Anwendungsfelder von TaN ALD Dünnschichten 5 2.2. Anwendungsfelder von Ru ALD Dünnschichten 5 2.3. TaN/Ru-Schichtstapel als Cu-Diffusionsbarriere 6 3. Atomlagenabscheidung (ALD) 8 3.1. Idealisiertes Grundprinzip der ALD 8 3.2. Mögliche Nichtidealitäten eines ALD-Prozesses 10 3.3. Klassifikation von ALD-Prozessen 12 3.4. TaN-Abscheidung mithilfe eines thermischen TBTDET bzw. TBTEMT und NH3-Prozesses 13 3.5. Ru-Abscheidung mithilfe eines ALD-Prozesses 16 4. Grundlagen von Schichtcharakterisierungsmethoden 17 4.1. Spektroskopische Ellipsometrie (SE) 17 4.2. Röntgenphotonenelektronenspektroskopie (XPS) 19 4.3. Rasterkraftmikroskopie im nicht-Kontakt-Modus (non-contact AFM) 20 4.4. Vierspitzenprober (4PP) 21 II. Praxis 23 5. Experimentelle Methodik 24 5.1. ALD-Reaktor mit in-situ Ellipsometer und in-vacuo XPS und AFM/STM 24 5.1.1. Prozesskammer 24 5.1.2. In-situ Ellipsometer und in-vakuo Messtechnik 24 5.1.3. Bei ALD TaN-Prozessen verwendete Parameter 25 5.2. ALD-Reaktor mit Blitzlampenfeld für Blitz-ALD 26 5.3. Vorgehensweise bei der in-situ Ellipsometrie 27 5.3.1. Übersicht 27 5.3.2. Details zur Datenerfassung 29 5.3.3. Details zur optischen Modellierung 32 5.3.4. Datennachbearbeitung: Erstellung von ALD-Zyklus-Wachstums Diagrammen 40 5.3.5. Datennachbearbeitung: Extrahierung von Parametern aus ALDZyklus-Wachstums Diagrammen 41 5.3.6. Fehlerbetrachtung 43 5.4. Vorgehensweise bei XPS-Experimenten 43 5.5. Weitere verwendete ex-situ Messtechniken 45 5.6. O2-Aufnahme einer abgeschiedenen TaN-Schicht 46 6. Thermische ALD TaN Schichtuntersuchungen an iSE-ALD-Anlage 47 6.1. O3-Vorbehandlung 47 6.1.1. Einführung 47 6.1.2. Auswirkungen auf natives und thermisches SiO2 47 6.1.3. Temperatureinfluss 49 6.2. Analyse mithilfe von Präkursor TBTDET abgeschiedener thermischer ALD TaN Dünnschichten 50 6.2.1. Verwendete Prozessparameter 50 6.2.2. Initialer (heterogener) Wachstumsbereich 51 6.2.3. Linearer (homogener) Wachstumsbereich 52 6.2.4. CVD-Verhalten von TBTDET bei 160 und 210 C 55 6.2.5. Nachbehandlungen (Tempern und O2-Aufnahme) 56 6.2.6. Fazit 58 6.3. Analyse mithilfe von Präkursor TBTEMT abgeschiedener thermischer ALD TaN Dünnschichten 58 6.3.1. Initialer (heterogener) Wachstumsbereich 58 6.3.2. Linearer (homogener) Wachstumsbereich 60 6.3.3. Nachbehandlung mit O2 64 6.3.4. Fazit 64 6.4. Vergleich der Präkursoren TBTDET & TBTEMT für die thermische TaN-ALD 66 6.4.1. Einführung 66 6.4.2. Vergleich XPS-Ergebnisse & O2-Aufnahme 68 6.4.3. Vergleich iSE-Ergebnisse 68 6.4.4. Vergleich AFM-Ergebnisse 70 6.4.5. Fazit 70 7. Prozessentwicklung an Flash-ALD-Anlage 72 7.1. Einführung 72 7.2. Temperaturvariation 73 7.3. Pulszeitvariationen 74 7.4. Eigenzersetzung von TBTEMT (CVD-Abscheidung) 77 7.5. Zusammenfassung zur Prozessentwicklung 78 7.6. Erste Ergebnisse zum Blitzeinfluss 78 7.6.1. Einführung 78 7.6.2. Rauheit (AFM-Ergebnisse) 79 7.6.3. chemische Zusammensetzung(XPS-Ergebnisse) 80 8. Zusammenfassung und Ausblick 82 III. Anhang 84 A. XPS-Ergebnis von O2-Nachbehandlung mit Präkursor TBTEMT 85 Literaturverzeichnis 86 / Thermal ALD with the precursors TBTDET and TBTEMT, NH3 as the second reactant and Ar as inert purging gas was studied. For measuring purposes time-resolved in-situ spectroscopic ellipsometry with an data acquisition rate of 0,86 data points/s, in-vacuo XPS and AFM was used. It was possible to deposit very smmoth homogenous closed TaN thin films with a Ta:N rate of about 0,6, contaminations of 5 at.% (TBTDET) and 9 at.% (TBTEMT), respectively, and a GPC of about 0,6 nm/Zyklus. An O3 pretreatment of a SiO2 surface accelerated the initial phase of the TaN atomic layer deposition (ALD) deposition. These TaN-Schichten were very reactiv against O2.:1. Einleitung 1 I. Theorie 4 2. Anwendungsfelder von TaN & Ru-ALD-Dünnschichten 5 2.1. Anwendungsfelder von TaN ALD Dünnschichten 5 2.2. Anwendungsfelder von Ru ALD Dünnschichten 5 2.3. TaN/Ru-Schichtstapel als Cu-Diffusionsbarriere 6 3. Atomlagenabscheidung (ALD) 8 3.1. Idealisiertes Grundprinzip der ALD 8 3.2. Mögliche Nichtidealitäten eines ALD-Prozesses 10 3.3. Klassifikation von ALD-Prozessen 12 3.4. TaN-Abscheidung mithilfe eines thermischen TBTDET bzw. TBTEMT und NH3-Prozesses 13 3.5. Ru-Abscheidung mithilfe eines ALD-Prozesses 16 4. Grundlagen von Schichtcharakterisierungsmethoden 17 4.1. Spektroskopische Ellipsometrie (SE) 17 4.2. Röntgenphotonenelektronenspektroskopie (XPS) 19 4.3. Rasterkraftmikroskopie im nicht-Kontakt-Modus (non-contact AFM) 20 4.4. Vierspitzenprober (4PP) 21 II. Praxis 23 5. Experimentelle Methodik 24 5.1. ALD-Reaktor mit in-situ Ellipsometer und in-vacuo XPS und AFM/STM 24 5.1.1. Prozesskammer 24 5.1.2. In-situ Ellipsometer und in-vakuo Messtechnik 24 5.1.3. Bei ALD TaN-Prozessen verwendete Parameter 25 5.2. ALD-Reaktor mit Blitzlampenfeld für Blitz-ALD 26 5.3. Vorgehensweise bei der in-situ Ellipsometrie 27 5.3.1. Übersicht 27 5.3.2. Details zur Datenerfassung 29 5.3.3. Details zur optischen Modellierung 32 5.3.4. Datennachbearbeitung: Erstellung von ALD-Zyklus-Wachstums Diagrammen 40 5.3.5. Datennachbearbeitung: Extrahierung von Parametern aus ALDZyklus-Wachstums Diagrammen 41 5.3.6. Fehlerbetrachtung 43 5.4. Vorgehensweise bei XPS-Experimenten 43 5.5. Weitere verwendete ex-situ Messtechniken 45 5.6. O2-Aufnahme einer abgeschiedenen TaN-Schicht 46 6. Thermische ALD TaN Schichtuntersuchungen an iSE-ALD-Anlage 47 6.1. O3-Vorbehandlung 47 6.1.1. Einführung 47 6.1.2. Auswirkungen auf natives und thermisches SiO2 47 6.1.3. Temperatureinfluss 49 6.2. Analyse mithilfe von Präkursor TBTDET abgeschiedener thermischer ALD TaN Dünnschichten 50 6.2.1. Verwendete Prozessparameter 50 6.2.2. Initialer (heterogener) Wachstumsbereich 51 6.2.3. Linearer (homogener) Wachstumsbereich 52 6.2.4. CVD-Verhalten von TBTDET bei 160 und 210 C 55 6.2.5. Nachbehandlungen (Tempern und O2-Aufnahme) 56 6.2.6. Fazit 58 6.3. Analyse mithilfe von Präkursor TBTEMT abgeschiedener thermischer ALD TaN Dünnschichten 58 6.3.1. Initialer (heterogener) Wachstumsbereich 58 6.3.2. Linearer (homogener) Wachstumsbereich 60 6.3.3. Nachbehandlung mit O2 64 6.3.4. Fazit 64 6.4. Vergleich der Präkursoren TBTDET & TBTEMT für die thermische TaN-ALD 66 6.4.1. Einführung 66 6.4.2. Vergleich XPS-Ergebnisse & O2-Aufnahme 68 6.4.3. Vergleich iSE-Ergebnisse 68 6.4.4. Vergleich AFM-Ergebnisse 70 6.4.5. Fazit 70 7. Prozessentwicklung an Flash-ALD-Anlage 72 7.1. Einführung 72 7.2. Temperaturvariation 73 7.3. Pulszeitvariationen 74 7.4. Eigenzersetzung von TBTEMT (CVD-Abscheidung) 77 7.5. Zusammenfassung zur Prozessentwicklung 78 7.6. Erste Ergebnisse zum Blitzeinfluss 78 7.6.1. Einführung 78 7.6.2. Rauheit (AFM-Ergebnisse) 79 7.6.3. chemische Zusammensetzung(XPS-Ergebnisse) 80 8. Zusammenfassung und Ausblick 82 III. Anhang 84 A. XPS-Ergebnis von O2-Nachbehandlung mit Präkursor TBTEMT 85 Literaturverzeichnis 86

A new materials system of a single layered Co(W) barrier/liner coupled with a Cu(Mn) alloy seed was investigated. Atom probe tomography visualized the sub-nanoscale structure of Cu(Mn)/Co(W) system, and thereby revealed Cu diffusion behavior of Co(W). Grain boundaries of Co were found to be the diffusion path, and successfully stuffed by W. Mn in Cu(Mn) also segregated to stuff the grain boundaries of Co. Combination of these two additives enabled high barrier property against Cu diffusion of Cu(Mn)/Co(W). Foreseeing tiny and high-aspect-ratio Cu interconnect features, Cu(Mn)/Co(W) was fabricated by ALD/CVD processes. To maximize the performance, minor impurities of the film incorporated from the ligand of the precursors were controlled by precursor selection. Thin, conformal, and smooth films were finally demonstrated onto a trench substrate.

No description available.

High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. Although Hf-based technology has become the de facto industry standard for high-k/metal gate MOSFETs, problematic long-term scalability has motivated the research of novel materials and solutions to fulfill the target performances expected of gate stacks in future technology nodes. In this work, integration of a high-k interfacial layer has been identified as the most promising approach to improve gate dielectric scalability, since this technology presents the advantage of potential compatibility with both current Hf-based and plausible future higher-k materials. Thulium silicate has been selected as candidate material for integration as interfacial layer, thanks to its unique properties which enabled the development of a straightforward integration process achieving well-controlled and repeatable growth in the sub-nm thickness regime, a contribution of 0.25+-0.15 nm to the total EOT, and high quality of the interface with Si. Compatibility with industry-standard CMOS integration flows has been kept as a top priority in the development of the new technology. To this aim, a novel ALD process has been developed and characterized, and a manufacturable process flow for integration of thulium silicate in a generic gate stack has been designed. The thulium silicate interfacial layer technology has been verified to be compatible with standard integration flows, and fabrication of high-k/metal gate MOSFETs with excellent electrical characteristics has been demonstrated. The possibility to achieve high performance devices by integration of thulium silicate in current Hf-based technology has been specifically demonstrated, and the TmSiO/HfO2 dielectric stack has been shown to be compatible with the industrial requirements of operation in the sub-nm EOT range (down to 0.6 nm), reliable device operation over a 10 year expected lifetime, and compatibility with common threshold voltage control techniques. The thulium silicate interfacial layer technology has been especially demonstrated to be superior to conventional chemical oxidation in terms of channel mobility at sub-nm EOT, since the TmSiO/HfO2 dielectric stack achieved ~20% higher electron and hole mobility compared to state-of-the-art SiOx/HfO2 devices at the same EOT. Such performance enhancement can provide a strong advantage in the EOT-mobility trade-off which is commonly observed in scaled gate stacks, and has been linked by temperature and stress analyses to the higher physical thickness of the high-k interfacial layer, which results in attenuated remote phonon scattering compared to a SiOx interfacial layer achieving the same EOT. / <p>QC 20140512</p>

Two identified setbacks for CIGS based devices in order to obtain higher efficiency are parasitic absorption in the window layer structure and losses in open-circuit voltage due to bad interfaces. This study investigated how the performance of the solar cell is affected by depositing intrinsic ZnO (i-ZnO) and ZnMgO with atomic layer deposition (ALD) instead of the conventional sputtering. No significant improvement in fill factor was obtained by the use of ALD compared to sputtering, leading to the conclusion that pinholes in the sputtered film are not a detrimental factor for the cell. As the thickness of the i-layer increased, an increase in FF was observed for the ALD-deposited i-layer, whereas a decrease was observed for the sputtered i-layer. The open-circuit voltage was considered constant between the two series with only small fluctuations, indicating that the defect chemistry of the i-ZnO/CdS interface was not improved with the use of ALD. In this study it is shown that a gain in short-circuit current can be obtained for CIGS solar cells in the high energy region of the spectrum by reducing the thickness of the i-ZnO, as well as alloying the ZnO with Mg. When compared with a baseline layer sample with a sputtered i-layer thickness of around 90 nm, the estimated gain in short-circuit current density without a loss in fill factor was 0.14 and 0.20 mA/cm2 for ALD and sputtering, respectively. For the series with a ZnMgO i-layer, the highest estimated gain was 0.17 mA/cm2. This was observed for the sample with a 4:1 (Zn:Mg) pulse ratio, whereas higher Mg contents yielded a too high band gap that resulted in an electron blocking barrier.

La réduction de la température de fonctionnement des piles à combustible à oxyde solide, de 1000°C à moins de 700°C, est la meilleure solution pour en diminuer les coûts de fabrication et augmenter la durée de vie. Néanmoins, l'abaissement de la température de fonctionnement s'accompagne d'une chute ohmique au sein de l'électrolyte et une augmentation des surtensions aux électrodes entraînant une diminution des performances de la pile. Dans cette optique, notre étude est centrée sur la recherche de nouveaux matériaux et de nouvelles architectures pour les piles SOFC. Des demi-cellules cathode/électrolyte avec des couches minces interfaciales de YSZ, LSM et La2NiO4 ont été élaborées sur des substrats denses de YSZ par différentes techniques (ALD, PVD et sol-gel). Ces demi-cellules ont été caractérisées par plusieurs techniques physico-chimiques (microscopie électronique à balayage, diffraction des rayons X) ; leurs propriétés électriques ont été étudiées par spectroscopie d'impédance. Une deuxième étude a été menée sur l'élaboration par ALD et les caractérisations physico-chimiques et électriques de couche minces d'oxyde zirconium dopé à l'oxyde d'indium (IDZ) présentant un gradient de composition, permettant de passer d'une conduction ionique à une conduction électronique. La dernière partie de ce travail a été dédiée à un nouveau matériau composite d'électrolyte, GDC-carbonates, dont l'étude des propriétés électriques et de vieillissement a montré des résultats encourageants.

<p>Smaller cellular telephones and more energy-efficient windows are just two examples of technological advances which call for new materials. Materials chemists seek to develop new materials, both out of pure curiosity to see which combination of elements and structures can be obtained and in efforts to produce materials, with specific properties. The starting materials (in solid, liquid or gaseous form) can then be combined and prepared in various ways. A chemical method that is gaining more attention for thin-film growth is Atomic Layer Deposition (ALD). This is a sophisticated type of vapor deposition in which the precursor gases are introduced separately into the reaction chamber.</p><p>Silicon carbide (SiC) and cubic boron nitride (c-BN) are extremely hard diamond-like materials, both with a high potential for application within the modern microelectronics and tool industry. Hexagonal boron nitride (h-BN), with its graphite-like layered structure, is a promising ceramics material.</p><p>Deposition of thin SiC and BN films from gaseous precursors has been studied by theoretical and experimental methods. The chemical composition and atomic arrangement of a growing surface is important for vapor growth. The surface may be terminated (e.g., by hydrogen atoms) and adopt various geometrical structures. Reconstruction of unterminated SiC(0001) surfaces, as well as H abstraction from the corresponding H-terminated surfaces, were studied using quantum mechanical calculations. Elementary reactions for vapor growth of SiC and BN, and <i>in situ</i> incorporation of dopant and contaminant species into these surfaces were also investigated theoretically. Moreover, thin films of BN were deposited by means of laser-assisted ALD. The general goal has been to predict and/or explain experimental results by investigating growth mechanisms.</p>

Smaller cellular telephones and more energy-efficient windows are just two examples of technological advances which call for new materials. Materials chemists seek to develop new materials, both out of pure curiosity to see which combination of elements and structures can be obtained and in efforts to produce materials, with specific properties. The starting materials (in solid, liquid or gaseous form) can then be combined and prepared in various ways. A chemical method that is gaining more attention for thin-film growth is Atomic Layer Deposition (ALD). This is a sophisticated type of vapor deposition in which the precursor gases are introduced separately into the reaction chamber. Silicon carbide (SiC) and cubic boron nitride (c-BN) are extremely hard diamond-like materials, both with a high potential for application within the modern microelectronics and tool industry. Hexagonal boron nitride (h-BN), with its graphite-like layered structure, is a promising ceramics material. Deposition of thin SiC and BN films from gaseous precursors has been studied by theoretical and experimental methods. The chemical composition and atomic arrangement of a growing surface is important for vapor growth. The surface may be terminated (e.g., by hydrogen atoms) and adopt various geometrical structures. Reconstruction of unterminated SiC(0001) surfaces, as well as H abstraction from the corresponding H-terminated surfaces, were studied using quantum mechanical calculations. Elementary reactions for vapor growth of SiC and BN, and in situ incorporation of dopant and contaminant species into these surfaces were also investigated theoretically. Moreover, thin films of BN were deposited by means of laser-assisted ALD. The general goal has been to predict and/or explain experimental results by investigating growth mechanisms.

L'abaissement de la température de fonctionnement des SOFC vers 600-750°C est un impératif incontournable pour en augmenter la durée de vie et permettre l'utilisation d'interconnecteurs moins onéreux. Cependant, ceci s'accompagne d'une incrémentation de la chute ohmique de l'électrolyte et des surtensions aux électrodes et, par conséquent, la diminution des performances électrochimiques de la pile. Différentes solutions sont à explorer : substituer l'électrolyte, diminuer la résistance de l'électrolyte usuel en réduisant son épaisseur (<5 µm) et, de toute façon, en améliorant les réactions aux interfaces par adjonction de couches minces fonctionnelles. D'une part, cette étude analyse différentes approches d'élaboration de couches minces de CeO2 et de cérine dopée, dont le rôle est avéré, notamment au niveau de l'oxydation à l'anode : le dépôt par couches atomiques, ALD (Atomic Layer Deposition), et le dépôt chimique en solution CBD (Chemical Bath Deposition) ont été explorés. D'autre part, l'exploitation d'un nouveau matériau composite (cérine dopée au gadolinium et Li2CO3-K2CO3 à l'état fondu) est analysée en tant que matériau d'électrolyte pour les SOFC. Finalement, les propriétés électrochimiques de ces électrolytes, combinés à des couches minces de cérine et de cérine dopée préparées par ALD, sont étudiées en particulier en conditions anodiques. Le but global est d'explorer le rôle des couches minces et de nouveaux électrolytes prometteurs, essentiellement dans les conditions anodiques des SOFC.

Pax3 protein is initially expressed in the dermomyotome of embryonic somites, which gives rise to skeletal muscle. Following myogenesis, Pax3 expression is mostly down-regulated and becomes restricted to a few satellite cells (SCs) of select mature muscles. SCs are activated to form new myonuclei during muscle hypertrophy, regeneration and repair. Intrafusal fibers of muscle spindles are thought to persist in a comparatively immature state as, unlike extrafusal fibers, they maintain small diameters, developmental myosins, Myf5 expression and high SC concentrations. This thesis tests the hypotheses that Pax3 expression is preferentially maintained in SCs of adult skeletal muscle spindles and can be augmented under conditions of SC activation. To study Pax3 through development, immunohistochemical techniques were used to identify SCs by their Pax7 expression, and analyze the proportion of SCs and myonuclei (MN) expressing Pax3 in chicken anterior latissimus dorsi (ALD) muscle excised at 9, 30, 62, and 145 days post-hatch. To induce SC activation, tenotomy was performed on the right ALD muscle of 138-day post-hatch chicks to induce compensatory hypertrophy of the ipsilateral synergistic posterior latissimus dorsi (PLD) muscle. The PLD was analyzed seven days after ALD tenotomy using similar immunohistochemical techniques. This is the first study to show Pax3 expressing SCs within intrafusal fibers of muscle spindles. This thesis demonstrates that throughout development there is a higher percentage of Pax3 expressing SCs within intrafusal fibers of muscle spindles than the surrounding extrafusal fibers that compose the bulk of the muscle. It is also revealed that the proportion of the SC population expressing Pax3 declines with age in both intrafusal and extrafusal fibers. Compensatory hypertrophy of the PLD resulted in a greater percentage of Pax3 expressing SCs in intrafusal and extrafusal fibers than under control conditions. The percentage of SCs expressing Pax3 after PLD overload was similar to that seen in young control muscle. The percentage of Pax3 expressing MN also increased after muscle overload to levels seen in young muscle. A disproportionate decrease in the proportion of SCs expressing Pax3 during development, and a disproportionate increase in the percentage of Pax3 positive SCs as a result of experimentally induced muscle hypertrophy, suggests that Pax3 expression in maturing muscle may be more than just a developmental vestige. Pax3 may be a factor in the activation and differentiation of SCs in maturing muscle.