Anhand von theoretischen Untersuchungen wird eine umfassende Beschreibung von kleinen Metalloxidclustern gegeben. Bei den untersuchten Systemen handelt es sich um Aluminium- und Eisenoxid-Ionen sowie entsprechende Oxid-Cluster, die beide Metalle enthalten. Neben der Bestimmung der geometrischen Struktur der Cluster werden auch die allgemeinen elektronischen Eigenschaften der eisenhaltigen Verbindungen untersucht. Alle Vorhersagen werden durch Vergleich mit verfügbaren experimentellen Ergebnissen -- hauptsächlich aus der Infrarot-Photodissoziations- und der Photoelektronenspektroskopie -- überprüft und bewertet. Soweit möglich werden die Bewegungen von Atomen oder kleinen Gruppen innerhalb der Cluster einzelnen experimentellen Signalen zugeordnet. Besondere Aufmerksamkeit wird dem Eisendioxidmolekül und seinem Anion gewidmet. Es wird mit spezialisierten Wellenfunktionsmethoden untersucht, mit denen ab initio Franck-Condon-Simulationen einschließlich nicht-adiabatischer und Spin-Orbit-Kopplungen für die Photoionisation des Anions erstellt werden. Sie liefern Erklärungen für die komplizierte Schwingungsstruktur des experimentellen hochauflösenden Photoelektronenspektrums. / By means of theoretical investigations, a comprehensive description of small metal oxide clusters is given. The studied systems are aluminum and iron oxide ions as well as respective bi-metallic oxide clusters. Besides the determination of the geometrical structure of the clusters, the general electronic properties of the iron-containing compounds are investigated. All predictions are checked and assessed by comparison with available experimental results, mainly infrared photodissociation and photoelectron spectroscopy measurements. As far as possible, motions of atoms or small groups within the clusters are assigned to distinct experimental vibrational features. Particular attention is paid to the iron dioxide molecule and its anion. It is studied with sophisticated wave function methods based on which ab initio Franck-Condon simulations for the photodetachment from the anion, including non-adiabatic and spin-orbit couplings, are generated. They provide explanations for the complicated vibrational structure of the experimental high-resolution photoelectron spectrum.

В работе проведено исследование оптических характеристик коллоидных квантовых точек (КТ) InP/ZnS различных размеров (QD-1, QD-2, QD-3) и композитных наноструктур анодированного оксида алюминия (AAО) с КТ методами спектрофотометрии и люминесцентной спектроскопии. Выполнен литературный обзор, касающийся электронных состояний в идеальном нанокристалле (НК), синтеза КТ на основе InP, использования НК для создания нанокомпозитов и расчёта цветовых характеристик излучателей. Описаны методики подготовки образцов и проведения измерений спектров оптического поглощения (ОП) и фотолюминесценции (ФЛ). По анализу спектров ОП КТ определены значения энергий оптических переходов. Полосы с наименьшей энергией соответствуют первому экситонному пику поглощения ядра InP. Другие могут быть приписаны оболочке из ZnS. По синему сдвигу осуществлена оценка размера ядер образцов КТ. Для QD-1 исследована температурная зависимость первого экситонного пика поглощения. Спектры ФЛ позволяют предположить, что полосы свечения формируются как экситонными переходами, так и дефектами кристаллической решётки ядра InP. Синтезирован ряд структур нанопористого оксида алюминия, отожженного при различных температурах, с осаждёнными КТ и исследована их ФЛ. Показано, что после осаждения в AAО НК InP/ZnS, сохраняют свои флуоресцентные свойства, следовательно, можно говорить об успешном создании композитных люминофоров InP/ZnS@AAO. Обсуждаются цветовые характеристики изучаемых образцов. / This study deals with the investigation of optical characteristics of differently sized InP/ZnS colloidal quantum dots (QD-1, QD-2, QD-3) and composite nanostrucrures of anodic aluminum oxide with QDs by means of spectrophotometry and luminescence spectroscopy techniques. The literature review concerning electronic states in an ideal nanocrystal (NC), synthesis of InP-based QDs, use of NCs for creating nanocomposites and calculating color characteristics of emitters was carried out. The methods of sample preparation and measurements of optical absorption (OA) and photoluminescence (PL) spectra are described. Values of optical transition energies are determined according to the analysis of QD OA spectra. The bands with the lowest energy correspond to the first exciton absorption peak of the InP core. The other transitions can be attributed to the ZnS shell. The core size of the QD samples was evaluated using the blue shift. The temperature dependence of the first exciton absorption peak was investigated for the QD-1. PL spectra of QDs indicate that the emission bands are formed by exciton transitions and defects of the InP crystal lattice. A series of structures of nanoporous aluminum oxide, annealed at different temperatures, with deposited QDs were synthesized and their PL were studied. Fluorescent properties of the QDs are found to be retained after the deposition, therefore, InP/ZnS@AAO composite phosphors were successfully created. Сolor characteristics of the samples under study are discussed.

Στη παρούσα Διατριβή διερευνήθηκε η χρήση υλικών υψηλής διηλεκτρικής σταθεράς (high-k) ως οξειδίων ελέγχου σε διατάξεις παγίδευσης φορτίου τύπου MONOS (Μetal-Οxide-Νitride-Οxide-Silicon). Τα οξείδια που εξετάστηκαν ήταν το HfO2, τo ZrO2 και το Al2O3. Η ανάπτυξή τους πραγματοποιήθηκε με χρήση της μεθόδου εναπόθεσης ατομικού στρώματος (ALD). Οι ιδιότητες των δομών μνήμης μελετήθηκαν συναρτήσει: (α) των πρόδρομων μορίων της εναπόθεσης για τα HfO2 και ZrO2, (β) του οξειδωτικού μέσου της εναπόθεσης για την περίπτωση του Al2O3 και (γ) της επακόλουθης ανόπτησης. Η ηλεκτρική συμπεριφορά των δομών εξετάστηκε με την κατασκευή πυκνωτών τύπου MOS. Τα υμένια του HfO2 αναπτύχθηκαν επί διστρωματικής στοίβας SiO2/Si3N4 με (α) αλκυλαμίδιο του χαφνίου (ΤΕΜΑΗ) και Ο3 στους 275 oC, και (β) κυκλοπενταδιενύλιο του χαφνίου (HfD-04) και Ο3 στους 350 οC. Ομοίως, τα υμένια του ZrO2 αναπτύχθηκαν επί διστρωματικής στοίβας SiO2/Si3N4 με: (α) αλκυλαμίδιο του ζιρκονίου (ΤΕΜΑΖ) και Ο3 στους 275 oC και (β) κυκλοπενταδιενύλιο του ζιρκονίου (ZrD-04) με Ο3 στους 350 oC. Ο δομικός χαρακτηρισμός, για το HfO2, φανέρωσε πως η ύπαρξη ή όχι κρυσταλλικού χαρακτήρα και η σύσταση του οξειδίου εξαρτάται τόσο από το πρόδρομο μόριο αλλά και από την ανόπτηση (600 οC, 2 min). Αντίθετα, το ZrO2 έχει σε κάθε περίπτωση κρυσταλλικότητα. Τα ηλεκτρικά χαρακτηριστικά των πυκνωτών Si/SiO2/Si3N4/high-k/Pt, δείχνουν ότι οι δομές έχουν ικανοποιητική συμπεριφορά ως στοιχεία μνήμης αφού όλες οι ιδιότητες πληρούν τις βασικές προϋποθέσεις ως στοιχεία μνήμης, παρά την ανυπαρξία ενεργειακού φραγμού μεταξύ στρώματος παγίδευσης και οξειδίου ελέγχου. Η ικανότητα παγίδευσης και η επίδοση των δομών με HfO2 και ZrO2 δεν διαφοροποιούνται σημαντικά με χρήση διαφορετικού πρόδρομου μορίου ή με την ανόπτηση. Ο έλεγχος όμως της αντοχής των δομών σε επαναλαμβανόμενους παλμούς εγγραφής/διαγραφής αναδεικνύει ότι αμφότερες οι δομές που ανεπτύχθησαν με βάση το κυκλοπενταδιενύλιο έχουν μειωμένη αντοχή ηλεκτρικής καταπόνησης. Τo Al2O3 αναπτύχθηκε χρησιμοποιώντας το μόριο ΤΜΑ και ως οξειδωτικό μέσο: (α) H2O, (β) O3 και (γ) Plasma Ο2 (μέθοδος PE-ALD) σε συνδυασμό με ΤΜΑ. Οι δομές στην αρχική κατάσταση, χωρίς ανόπτηση, χαρακτηρίζονται από ισχυρό ρεύμα έγχυσης ηλεκτρονίων από την πύλη (υπό αρνητικές τάσεις) περιορίζοντας την ικανότητα φόρτισης και την επίδοση διαγραφής. Η ανόπτηση σε φούρνο και αδρανές περιβάλλον (850 ή 1050 oC, 15 min) προκάλεσε σημαντική βελτίωση των ηλεκτρικών χαρακτηριστικών των δομών λόγω του σημαντικού περιορισμού του παραπάνω φαινομένου. Μετά το στάδιο της ανόπτησης οι συνδυασμοί ΤΜΑ/Η2Ο και ΤΜΑ/Plasma Ο2 έχουν καλύτερες χαρακτηριστικές σε σχέση με αυτές του συνδυασμού ΤΜΑ/Ο3. Το φαινόμενο της διαρροής ηλεκτρονίων από την πύλη αποδίδεται στη μεγάλη συγκέντρωση και χωρική κατανομή του υδρογόνου στο υμένιο υψηλής διηλεκτρικής σταθεράς. Τέλος, διερευνήθηκε η τροποποίηση των ιδιοτήτων μνήμης των δομών με εμφύτευση ιόντων αζώτου χαμηλής ενέργειας και υψηλής δόσης στο Al2O3 και επακόλουθη ανόπτηση υψηλής θερμοκρασίας. Η παρουσία αζώτου στο υμένιο καθώς και ο χημικός δεσμός του εμφυτευμένου αζώτου είναι συνάρτηση της θερμοκρασίας ανόπτησης. Επομένως, οι ιδιότητες μνήμης εξαρτώνται από τη μορφή σύνδεσης και την συγκέντρωση του εμφυτευμένου αζώτου στο τροποποιημένο Al2O3. Η υψηλή θερμοκρασία ανόπτησης (1050 οC, 15 min) φαίνεται να αποφέρει δομές με τις καλύτερες ιδιότητες μνήμης. / This thesis studies the functionality of high-k oxides as blocking oxide layers in SONOS type charge-trap memory devices. The oxide materials that were examined were the HfO2, the ZrO2 and the Al2O3. All these blocking oxide layers were deposited by atomic layer deposition technique (ALD). The electrical performance of the trilayer stacks was examined using Pt-gate MOS-type capacitors. The properties of the memory structures were examined as a function of: (a) precursor chemistry of HfO2 and ZrO2 deposition, (b) the deposition oxidizing agent in the case of Al2O3 and (c) subsequent high temperature annealing steps. The HfO2 films were deposited on SiO2/Si3N4 bilayer stacks using: (a) hafnium alkylamide (TEMAH) and O3 at 275 oC, and (b) hafnium cyclopentadienyl (HfD-04) and O3 at 350 oC. Similarly the ZrO2 films were deposited by (a) zirconium alkylamide (TEMAZ) and O3 at 275 oC, and (b) zirconium cyclopentadienyl (ZrD-04) and O3 at 350 oC The structural characterization of the HfO2 showed that the crystallinity of the deposited high-k material depends on the precursor choice and the post deposition annealing step (600 °C, 2 min). On the contrary ZrO2 is deposited in a crystalline phase independent of the deposition conditions and the choice of the precursors. The electrical characterization of Si/SiO2/Si3N4/high-k/Pt capacitors showed that all fabricated structures operate well as memory elements, despite the absence of an energy barrier between the trapping layer and control oxide. The trapping efficiency and the performance of structures with HfO2 or ZrO2 blocking layers do not revealed a dependence upon the precursor chemistry. However, endurance testing using continuous write/erase pulses showed that both structures deposited by cyclopentadienyl precursors cannot sustain the resulting electrical stress. The Al2O3 layers were deposited using the TMA molecule while three different oxidizing agents were used: (a) H2O, (b) O3 and (c) oxygen plasma. Electrical testing of the resulting Pt-gate trilayer capacitors showed that in the deposited condition all three samples were characterized by gate electrode induced electron leakage currents in the negative bias regime, which completely masked the substrate hole injection effects. This effect limits the performance and the functionality of the memory stacks. After a high temperature annealing step (850 or 1050 oC, 15 min) this leakage current is reduced significantly and the stacks can function as memory elements. The results point to suggest that after annealing the best performance is exhibited by the TMA/H2O and TMA/Plasma O2 samples. The effect of gate induced electron leakage current is attributed to hydrogen related contamination, which has been verified by ToF-ERDA in depth profile measurements, at least for the case of TMA/H2O samples. The modification of the memory properties of the SiO2/Si3N4/Al2O3 stacks was also investigated using low energy and high fluence nitrogen implantation into Al2O3 layer. The concentration and the chemical bonding of the implanted nitrogen is a function of annealing temperature. The memory properties of the stack depend therefore on the chemical bonding and the concentration of the remaining nitrogen in the modified Al2O3. The high temperature annealing (1050 oC, 15 min) appears to provide the structures with improved memory properties in terms of retention and fast erase performance.

Microtrusses are hybrid materials composed of a three-dimensional array of struts capable of efficiently transmitting an externally applied load. The strut connectivity of microtrusses enables them to behave in a stretch-dominated fashion, allowing higher specific strength and stiffness values to be reached than conventional metal foams. While much attention has been given to the optimization of microtruss architectures, little attention has been given to the strengthening mechanisms inside the materials that make up this architecture. This thesis examines strengthening mechanisms in aluminum alloy and copper alloy microtruss systems with and without a reinforcing structural coating. C11000 microtrusses were stretch-bend fabricated for the first time; varying internal truss angles were selected in order to study the accumulating effects of plastic deformation and it was found that the mechanical performance was significantly enhanced in the presence of work hardening with the peak strength increasing by a factor of three. The C11000 microtrusses could also be significantly reinforced with sleeves of electrodeposited nanocrystalline Ni-53wt%Fe. It was found that the strength increase from work hardening and electrodeposition were additive over the range of structures considered. The AA2024 system allowed the contribution of work hardening, precipitation hardening, and hard anodizing to be considered as interacting strengthening mechanisms. Because of the lower formability of AA2024 compared to C11000, several different perforation geometries in the starting sheet were considered in order to more effectively distribute the plastic strain during stretch-bend fabrication. A T8 condition was selected over a T6 condition because it was shown that the plastic deformation induced during the final step was sufficient to enhance precipitation kinetics allowing higher strengths to be reached, while at the same time eliminating one annealing treatment. When hard anodizing treatments were conducted on O-temper and T8 temper AA2024 truss cores, the strength increase was different for different architectures, but was nearly the same for the two parent material tempers. Finally, the question of how much microtruss strengthening can be obtained for a given amount of parent metal strengthening was addressed by examining the interaction of material and geometric parameters in a model system.

Microtrusses are hybrid materials composed of a three-dimensional array of struts capable of efficiently transmitting an externally applied load. The strut connectivity of microtrusses enables them to behave in a stretch-dominated fashion, allowing higher specific strength and stiffness values to be reached than conventional metal foams. While much attention has been given to the optimization of microtruss architectures, little attention has been given to the strengthening mechanisms inside the materials that make up this architecture. This thesis examines strengthening mechanisms in aluminum alloy and copper alloy microtruss systems with and without a reinforcing structural coating. C11000 microtrusses were stretch-bend fabricated for the first time; varying internal truss angles were selected in order to study the accumulating effects of plastic deformation and it was found that the mechanical performance was significantly enhanced in the presence of work hardening with the peak strength increasing by a factor of three. The C11000 microtrusses could also be significantly reinforced with sleeves of electrodeposited nanocrystalline Ni-53wt%Fe. It was found that the strength increase from work hardening and electrodeposition were additive over the range of structures considered. The AA2024 system allowed the contribution of work hardening, precipitation hardening, and hard anodizing to be considered as interacting strengthening mechanisms. Because of the lower formability of AA2024 compared to C11000, several different perforation geometries in the starting sheet were considered in order to more effectively distribute the plastic strain during stretch-bend fabrication. A T8 condition was selected over a T6 condition because it was shown that the plastic deformation induced during the final step was sufficient to enhance precipitation kinetics allowing higher strengths to be reached, while at the same time eliminating one annealing treatment. When hard anodizing treatments were conducted on O-temper and T8 temper AA2024 truss cores, the strength increase was different for different architectures, but was nearly the same for the two parent material tempers. Finally, the question of how much microtruss strengthening can be obtained for a given amount of parent metal strengthening was addressed by examining the interaction of material and geometric parameters in a model system.