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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

A Study of Flexural Plate Wave Device with High C-axis Orientation ZnO Piezoelectric Film and Interdigital Transducer

Chang, Yi-Wen 13 July 2006 (has links)
By integrating Nanotechnology and MEMS technology, this thesis aims to research a flexural-plate wave (FPW) sensor for testing Immunoglobulin E (IgE) concentration in blood serum, a significant index for the diagnosis of allergies. The traditional methods of blood assay are time-consuming and costly, and its average accuracy of only 60-70 percent. After compare the major four kinds of acoustic sensor, the FPW sensor demonstrates a high accuracy, high sensitivity, low operation frequency, low diagnosis time and low cost. This thesis utilizes a reactive RF sputter system to deposite the piezoelectric ZnO thin film. To obtain the high C-axis orientation (002) characteristic of ZnO membrane, many parameters such as substrate temperature, Ar/O2 ratio and RF power have been adjusted and optimized during the sputtering process. The effects of varied parameters will be investigated and analysis by using SEM or XRD facilities. In this study, we combined the high figure-of-merits ZnO deposition techniques and single-side anisotropic silicon etch process to implement the process integration of FPW device. Finally, this research has demonstrated a 50-60MHz center frequency can be extracted from such silicon-based FPW microsensor.
2

Analytical Solution of the Continuous Cellular Automaton for Anisotropic Etching

Gosálvez, Miguel A., Xing, Yan, Sato, Kazuo, 佐藤, 一雄 04 1900 (has links)
No description available.
3

Applications of Anisotropic Etching On Silicon Substrate : Si-molding and Si V-grooves

CHEN, Chien-Chou 03 September 2001 (has links)
The objective of this thesis is to apply semiconductor etching process technologies on 6 inch P-type Si substrate and produce a mold of Light Guiding Plate (LGP). After evaporate chromium (Cr) onto the Si substrate as etch mask, the thin films were then patterned and subsequently etch by plasma. Different powers were used to compare the cross-sections of the patterns. The results would be the references of Si molding process. Another objective is to fabricate Si-V grooves which can connect the fibers and accurately position fibers. Anisotropic etching of Si-V grooves were formed using EDP solution, and sputtered Ta2O5 was used as the etch mask. At a etching temperature of 1100C, the under cut is 2.5~3mm . Additionally using SiO2 as etch mask by thermo evaporation at 1050¢J .Use EDP solution at 1100C, the under cut is 2.25mm which had a better result.
4

Růst polovodičových nanovláken použitím dvousložkového katalyzátoru / Semiconductor nanowire growth utilizing alloyed catalyst

Musálek, Tomáš January 2016 (has links)
This master's thesis deals with growth of germanium nanowires using different catalyst particles. The emphasis is mainly layed on fabrication of specific alloyed catalyst consisting of (AgGa). In the first part of the thesis are mentioned two most common concepts of nanowire growth and the importance of phase diagrams for their interpretation. Method for production of alloyed catalyst is demonstrated and experiments focused on the growth of germanium nanowires using this catalyst were performed. Moreover, method for modification of germanium surface via anisotropic etching is demonstrated as well. Such etched structures are suitable for nanowire growth with the help of different kinds of catalyst particles or for the growth of nanowires made of various materials.
5

Development Of A Micro-fabrication Process Simulator For Micro-electro-mechanical-systems(mems)

Yildirim, Alper 01 December 2005 (has links) (PDF)
ABSTRACT DEVELOPMENT OF A MICRO-FABRICATION PROCESS SIMULATOR FOR MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) Yildirim, Alper M.S, Department of Mechanical Engineering Supervisor: Asst. Prof. Dr. Melik D&ouml / len December 2005, 140 pages The aim of this study is to devise a computer simulation tool, which will speed-up the design of Micro-Electro-Mechanical Systems by providing the results of the micro-fabrication processes in advance. Anisotropic etching along with isotropic etching of silicon wafers are to be simulated in this environment. Similarly, additive processes like doping and material deposition could be simulated by means of a Cellular Automata based algorithm along with the use of OpenGL library functions. Equipped with an integrated mask design editor, complex mask patterns can be created by the software and the results are displayed by the Cellular Automata cells based on their spatial location and plane. The resultant etched shapes are in agreement with the experimental results both qualitatively and quantitatively. Keywords: Wet Etching, Anisotropic Etching, Doping, Cellular Automata, Micro-fabrication simulation, Material Deposition, Isotropic Etching, Dry Etching, Deep Reactive Ion Etching
6

Chemically Optimized Cu Etch Bath Systems for High-Density Interconnects and the FTIR Operando Exploration of the Nitrogen Reduction Reaction on a Vanadium Oxynitride Electrocatalyst

Caperton, Joshua M 08 1900 (has links)
Printed circuit board manufacturing involves subtractive copper (Cu) etching where fine features are developed with a specific spatial resolution and etch profile of the Cu interconnects. A UV-Vis ATR metrology, to characterize the chemical transitions, has been developed to monitor the state of the bath by an in-situ measurement. This method provides a direct correlation of the Cu etch bath and was able to predict a 35% lower etch rate that was not predicted by the three current monitoring methods (ORP, specific gravity, and conductivity). Application of this UV-Vis ATR probe confirmed that two industrial etch baths, in identical working conditions, confirmed a difference in Cu2+ concentration by the difference of the near IR 860nm peak. The scope of this probe allowed chemically specific monitoring of the Cu etch bath to achieve a successful regeneration for repeated use. Interlayer dielectrics (ILDs) provide mechanical and electrical stability to the 3D electrical interconnects found in IC devices. It is particularly important that the structural support is created properly in the multilayered architecture to prevent the electrical cross signaling in short range distances. A combined multiple internal reflection and transmission FTIR has been employed for the characterization of silicon oxycarbonitride (SiOCN) films. These dielectric low-k films incorporate various functional groups bonded to silicon and require chemical bonding insight in the transformation and curing process. Distinct SiOx bonding patterns were differentiated, and the structure of the films can be predicted based on the amount of Si network and caged species. Further optimization of the FTIR analysis must minimize interference from moisture that can impact the judgement of peak heights. To accommodate this, a high-quality glove box was designed for dry air feedthrough to achieve a 95% moisture reduction during analysis, where less than 0.1 mAbs of moisture is detected in the spectra (without additional correction). The glove box allows for the rapid analysis of multiple sample throughput to outpace alternative characterization methods while retaining low spectral noise and a dry environment for 24/7 analysis. There is a great need to identify new catalysts that are suitable for tackling current economic demands, one of which is the nitrogen reduction reaction (NRR). The development of the surface enhanced infrared absorption spectroscopy (SEIRAS) has been applied to characterize the NRR mechanisms on the vanadium oxynitride electrocatalyst. Electrochemical measurements demonstrate NRR activity that is up to three times greater in the presence of N2 than the control Ar. FTIR operando suggests that a considerable number of intermediates were formed and continued to increase in absorbing value under an applied potential of -0.8 V vs Ag/AgCl. XPS results of the post-NRR film suggest a restricting of the film where vanadium oxynitride films are prone to instabilities under the possible MvK mechanism. After 90 minutes of NRR, the NH3 generated was approximately 0.01 ppm was calculated for through the salicylate colorimetric method. On-going efforts are focusing on optimizing the vanadium oxynitride film by the tuning of the oxynitride ratios and crystalline properties to promote the formation of V≡N: during the nitrogen reduction reaction.
7

Contribution to the design and fabrication of an integrated micro-positioning system / Contribution à la conception et à la fabrication d'un système de micro-positionnement intégré

Khan, Muneeb Ullah 24 March 2014 (has links)
L’objectif de la thèse est de développer un dispositif de micro positionnement intégrant à la fois les actionneurs et les capteurs. Un dispositif a été conçu afin de réaliser des déplacements dans les plans sur une course millimétrique. Le dispositif compact ne nécessite pas de système de guidage additionnel et selon le mode d’utilisation de ces moteurs, il est capable de réaliser des translations dans le plan ou des rotations autour d’un axe perpendiculaire au plan. Le dispositif comprend quatre moteurs électromagnétiques linéaires fixés orthogonalement sur une structure en forme de croix. Chaque moteur consiste en une paire de bobines planes entrelacées fixe et une barre ’aimants mobile. Un capteur de déplacement intégré dans la structure en croix permettant de mesurer le déplacement de celle-ci a été conçu et fabriqué. Ce capteur est constitué d’une tête de mesure à fibres optiques placé face à un réseau en silicium réalisé par des techniques de microfabrication. Afin de minimiser les erreurs d’assemblage, la structure en croix a également été micro fabriquée. Le dispositif est capable de réaliser un déplacement de 10 mm et une rotation de ±11° autour de l’axe perpendiculaire au plan du dispositif. La résolution de déplacement du dispositif est de 1,4 µm avec une précision de 31 nm en boucle fermée. Le dispositif peut également atteindre une vitesse de déplacement de 12 mm/s. / The objective of thesis is to develop an integrated micro positioning system for micro applications. A unique micro positioning system design capable to deliver millimeter level strokes with pre-embedded auto guidance feature in micro application has been realized. The design integrates, a stack of orthogonally arranged four electromagnetic linear motors. Each linear motor consists of a fixed planar electric drive coil and mobile permanent magnet array. The optimal design of the system delivers a small footprint size. In addition, to measure and control the displacement, a high resolution compact optical displacement measurement sensor has been designed and fabricated in silicon material using microfabrication technology. Furthermore, a light weight silicon cross structure was fabricated using dry etching technology to reduce components assembly errors. The device is capable to deliver 10 mm displacement stroke with a rotation of ±11° about an axis perpendicular to the plane of the device. The displacement resolution of the device is 1.4 µm with a precision of 31 nm in closed loop control. The device can realize displacement with a speed of 12 mm/s.
8

Elaboration de masques nano poreux de polymères et gravure profonde du silicium / Elaboration of nano porous polymers masks and silicon deep etching

Vital, Alexane 13 July 2016 (has links)
En microélectronique, les techniques actuelles de fabrication des supercondensateurs requièrent le développement de motifs nanostructurés de surface spécifique élevée. Nous nous intéressons à une alternative émergeante aux techniques classiques ‘top-down’ de fabrication des masques de gravure : les mélanges d’homopolymères. En effet, deux polymères avec des chimies différentes sous forme de films minces peuvent conduire à une séparation de phase avec des domaines cylindriques de taille sub-micrométrique. Une gravure cryogénique au travers de ces masques produit une nanostructuration avec une importante surface spécifique. Les travaux de cette thèse ont porté sur la réalisation des films minces et sur la compréhension des mécanismes d’obtention de la morphologie finale. Une étude a été menée sur les solvants de dépôt et d’exposition pour déterminer leur influence sur les morphologies. Les paramètres influençant la taille des motifs sont ensuite étudiés. Des domaines de moins de 100 nm ont été obtenus. Finalement, l’étude d’une méthode alternative de dépôt par dip-coating a permis l’obtention d’une grande variété de morphologies en une seule étape et pour une même solution. Ces travaux se sont ensuite orientés sur la réalisation des motifs en gravant par plasma le silicium au travers de ces masques. Deux procédés ont été retenus, adaptés et optimisés afin de réaliser des gravures profondes sans défaut. Le procédé STiGer aniso permet de les obtenir et ce, avec la meilleure répétabilité. Un autre axe, portant sur l’optimisation de la sélectivité en modifiant la nature du masque, a été développé. Une sélectivité de 70 : 1 est obtenue pour un masque de poly(styrène) marqué au Ru. / In microelectronics, current techniques for supercapacitors manufacturing requires the development of nanostructured patterns with high specific surface. We are interested in an emerging alternative approach to conventional 'top-down' fabrication techniques based on blends of homopolymers. Indeed, two polymers with different chemistries in thin films can lead to phase separation with cylindrical domains of sub-micrometer size. A cryogenic plasma through these masks can produce nanostructuration with a high specific surface. The work of this thesis focused on the realization of thin films and on the understanding of the mechanisms to obtain the final morphology. A study on solvent deposition and exposure was led to determine their influence on the morphologies. The parameters influencing the size of the domains are then studied. Domains of less than 100 nm were obtained. Finally, the study of an alternative method of deposition by dip-coating enabled to obtain a variety of morphologies in one step and for the same solution. This work was then directed towards the realization of structured surfaces by plasma etching of the silicon through this masks. Two methods were used, adapted and optimized to achieve deep etched without default. The process StiGer aniso allows to obtain this and with better repeatability. Another axis is developed. It is focused on the optimization of the selectivity by modifying the nature of the mask. We succeed in obtaining a selectivity of 70: 1 with a mask of poly(styrene) stained by Ru.
9

Technologie leptání křemíku / The silicon etching technology

Krátký, Stanislav January 2012 (has links)
This thesis deals with the silicon etching technology. It Examines using of water solution of potassium hydroxide. It focuses on plasma etching of silicon using mixture of CF4 and O2 as the dry way of etching. Important parameters of etching like etching rate of silicon and masking materials, etching selectivity, surface roughness and underetching of mask are determined for both ways. Some additional processes has been examined as well, namely creating of mask of resist and silicon dioxide, lithography process and etching of resist using oxygen plasma.

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