As fabrication technology keeps advancing, many deep submicron (DSM) effects have become increasingly evident and can no longer be ignored in Very Large Scale Integration (VLSI) design. In this dissertation, we study several deep submicron problems (eg. coupling capacitance, antenna effect and delay variation) and propose optimization techniques to mitigate these DSM effects in the place-and-route stage of VLSI physical design. The place-and-route stage of physical design can be further divided into several steps: (1) Placement, (2) Global routing, (3) Layer assignment, (4) Track assignment, and (5) Detailed routing. Among them, layer/track assignment assigns major trunks of wire segments to specific layers/tracks in order to guide the underlying detailed router. In this dissertation, we have proposed techniques to handle coupling capacitance at the layer/track assignment stage, antenna effect at the layer assignment, and delay variation at the ECO (Engineering Change Order) placement stage, respectively. More specifically, at layer assignment, we have proposed an improved probabilistic model to quickly estimate the amount of coupling capacitance for timing optimization. Antenna effects are also handled at layer assignment through a linear-time tree partitioning algorithm. At the track assignment stage, timing is further optimized using a graph based technique. In addition, we have proposed a novel gate splitting methodology to reduce delay variation in the ECO placement considering spatial correlations. Experimental results on benchmark circuits showed the effectiveness of our approaches.

Orientador: Fernando Aparecido Sigoli / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Química / Made available in DSpace on 2018-08-26T22:25:31Z (GMT). No. of bitstreams: 1 Petiote_Lanousse_M.pdf: 4326996 bytes, checksum: a438622b7ca8e3a70bbbec5abf7dc735 (MD5) Previous issue date: 2015 / Resumo: Esse trabalho reporta o estudo das propriedades fotoluminescentes de uma série de complexos dinucleares de lantanídeos trivalentes contendo os ligantes 2 tenoiltrifluoro-acetilacetonato (tta), óxido de [2 (difenilfosforil)etil]difenilfosfina (dppeo), e óxido de trifenilfosfina (tppo). Os complexos de formula geral [{Ln(tta)3(tppo)}2(µ-dppeo)] foram obtidos a partir do controle da estequiometria e da ordem de adição dos reagentes em reações envolvendo os ligantes fosfinóxidos e os complexos precursores [Ln(tta)3(H2O)2]. A caracterização foi realizada por análise elementar, espectroscopia vibracional na região do infravermelho, espectroscopia eletrônica na região do visível, ressonância magnética nuclear de 1H e de 31P e análise termogravimétrica. Para os complexos de európio(III), são apresentados cálculos semi-empíricos realizados baseando-se nas geometrias de coordenação do estado fundamental desses complexos usando o modelo SPARKLE/AM1. Os espectros de fotoluminescência exibem as bandas de emissão características dos íons lantanídeos utilizados confirmando a atuação do efeito antena nos mesmos. Os espectros de emissão dos complexos do íon Eu(III) apresentam elevados valores da razão assimétrica I(5D0?7F2)/ I(5D0?7F1) e de ?2 evidenciando a presença dos íons Eu(III) em ambientes químicos de baixa simetria e a atuação do acoplamento dinâmico. Os complexos de európio(III) mostram um aumento do tempo de vida de emissão e do rendimento quântico com a substituição das moléculas de água devido a diminuição das taxas de decaimentos não radiativos do nível emissor 5D0. A energia do nível tripleto do complexo [{Eu(tta)3(tppo)}2(?-dppeo)] determinada experimentalmente e calculada apresentam boa concordância. Os cálculos das taxas de transferência e retro-transferência de energia mostram que, no caso da transferência de energia dos ligantes para o íon Eu(III), as rotas mais eficientes são T?5D1 e T?5D0. As coordenadas de cromaticidade da Commission Internacionale d¿Éclairage (CIE) indicam que a luz vermelha emitida pelos complexos contendo íons Eu(III) apresenta alta pureza. Os complexos com emissões na região do infravermelho próximo apresentam tempos de vida de emissão 10 vezes menor do que os complexos de európio devido baixa eficiência do efeito antena e a desativação não radiativa dos níveis emissores dos íons Er(III) e Yb(III). Palavras-chave: Lantanídeos. Complexos dinucleares. Luminescência. Efeito Antena / Abstract: This work reports on photoluminescent properties of a series of lanthanide dinuclear complexes containing 2- thenoyltrifluoroacetylacetonate, [2 (diphenylphosphoryl)ethyl](diphenyl)phosphine oxide and triphenyl oxide as ligands. The complexes have the general formula [{Ln(tta)3(tppo)}2(µ-dppeo)] and were obtained by controlling the stereochemistry and reagents addition in reactions involving the phosphine oxide ligands and precursor complexes [Ln(tta)3(H2O)2] The characterization was carried out using elemental analysis, IR vibrational spectroscopy, UV-Vis electronic spectroscopy, 1H and 31P NMR and thermogravimetric analysis techniques. Semi-empirical calculations have been carried out using the fundamental geometries of europium(III) complexes optimized by the SPARKLE/AM1 model. The photoluminescence spectra under excitation in the ligand show the narrow bands characteristics of lanthanide ions used, confirming that the antenna effect is operating in all complexes. The emission spectra of Eu(III) complexes show high values of either asymmetric ratio I(5D0?7F2)/ I(5D0?7F1) and the intensity parameter ?2 indicating low-symmetry chemical environments occupied by Eu(III) ions and contribution of the dynamic coupling mechanism. The Eu(III) complexes show an increasing of the luminescence lifetime and the quantum yield as the water molecules have been substituted. This was attributed to a reduction of the non-radiative decay of the 5D0 level in complexes without water molecules in the coordination sphere of lanthanide trivalent ion. The experimental value of the triplet energy level for the complex [{Eu(tta)3(tppo)}2(?-dppeo)] is consistent with the calculated one. Calculations of the energy transfer rates in the europium complexes show that the most efficient routes are T?5D1 e T?5D0. The chromaticity coordinates indicate high purity for the red light emitted by the europium complexes. The complexes with emission in the near infrared region show emission life 10 times lower than the europium complex. This was attributed to different factors such as low relative efficiency of the antenna effect and the efficient non-radiative deactivation of emitting levels in Er (III) and Yb (III) mainly by C-H oscillators in the ligands. Keywords: Lanthanides, Dinuclear complexes, Luminescence, Antenna effect / Mestrado / Quimica Inorganica / Mestre em Química

Depuis ses débuts, l’industrie de la microélectronique s’est fixé comme objectif d’augmenter les performances et la densité des circuits, en suivant la loi de Moore. Ainsi, depuis la commercialisation du premier circuit en 1971, les industriels se sont atteler à miniaturiser les transistors, ce qui améliore automatiquement leurs performances. Cela dit, à partir du nœud 28nm, l’électrostatique est devenue très difficile à contrôler, et de nouvelles architectures de transistor, tel que le FDSOI est proposée par STMicroelectronics pour remédier à cette problématique. Les dégradations par effets d’antenne, qui apparaissent lors des procédés plasma, provoque la dégradation de l’oxyde de grille des composants, et peuvent ainsi induire la perte des avantages offerts par cette nouvelle technologie. Dans ce contexte, l’évaluation de l’impact de ce phénomène sur le comportement électrique des transistors en technologie FDSOI est clé. Cela représente l’objectif principal de cette thèse. Tout d’abord, un protocole expérimental a été défini, basé sur des techniques de caractérisation des procédés plasma (structures d’antenne), et sur la caractérisation de la dégradation de l’oxyde de grille. Ensuite, un nouveau mode d’écoulement des charges durant les étapes plasma, spécifique à cette nouvelle technologie est proposé. Le comportement des principaux mécanismes de dégradation par effet d’antenne est aussi investigué. Le premier, est lié à la nonuniformité locale du plasma entre les nœuds du transistor, qui induit des dégradations de type porteurs chauds. Le second, est lié à la topographie des antennes, qui cause des effets d’ombrage électronique, et donc des déséquilibre en courant entre les nœuds du transistor. Enfin, un modèle basé sur un simulateur de circuit ELDO ®, et qui permet de reproduire le comportement de ce phénomène dans la technologie FDSOI est proposé. Ce dernier tient compte des caractéristiques des structures d’antenne ainsi que des paramètres plasma. Diverses solutions sont par la suite proposées pour réduire les tensions d’antenne, basées notamment sur des simulations modèles pour optimiser les paramètres des procédés plasma. Des solutions de prévention dès la conception des circuits sont aussi proposées. / Since its beginning, the microelectronic industry is aiming to increase the circuits performance and density, following Moore’s law. Hence, since the commercialization of the first circuit in 1971, the industry focuses on the transistor dimensions reduction, which improve the device performances. But, starting from the 28nm technological node, the electrostatic has become very difficult to control, and new device structure, such as the FDSOI, is proposed by STMicroelectronics to resolve this issue. The antenna effects, which occur during plasma processes, induce gate oxide damages, which can lead to the loss of those new technology benefits. In this context, the analysis of this phenomenon on the electrical behavior of FDSOI devices is key. This is the main objective of this work. First, an experimental protocol is defined, based on plasma processes characterization technique (antenna structures), and gate oxide damage characterization. Then, a charging flow mode specific to this new technology is proposed. The mechanisms linked to the antenna damages are also investigated. The first mechanism is linked to the plasma local nonuniformity between the device nodes, which induces a stress mode similar to hot carrier injection. The second mechanism is related to the antenna topography, which generates electron shading effect, thus promoting an electrical imbalance between the device nodes. Finally, a model based on the simulator circuit ELDO ®, which allows reproducing the behavior of this phenomenon on the FDSOI technology is proposed. This model takes into account the antenna structure characteristics and the plasma parameters. Based on the model simulations, various solutions to reduce the antenna voltages are proposed. Prevention rules during the circuit design were also proposed and implemented.

Fast and accurate diagnosis is always in demand by modern medical professionals and in the area of national defense. At present, limitations of testing speed, sample conditions, and levels of precision exist under current technologies, which are usually slow and involve testing the specimen under laboratory conditions. Typically, these methods also involve several biochemical processing steps and subsequent detection of low energy luminescence or electrical changes, all of which reduce the speed of the test as well as limit the precision. In order to solve these problems and improve the sensing performance, this project proposes an innovative CMOS magnetic biological sensor system for rapidly testing the presence of potential pathogens and bioterrorism agents (zoonotic microorganisms) both in specimens and especially in the environment. The sensor uses an electromagnetic detection mechanism to measure changes in the number of microorganisms--tagged by iron nanoparticles--that are placed on the surface of an integrated circuit (IC) chip. Measured magnetic effects are transformed into electronic signals that count the number and type of organisms present. This biosensor introduces a novel design of a conical-shaped inductor, which achieves ultra-accuracy of sensing biological pathogens. The whole system is integrated on a single chip based on the fabrication process of IBM 180 nm (CMOS_IBM_7RF), which makes the sensor small-sized, portable, high speed, and low cost. The results of designing, simulating, and fabricating the sensor are reported in this dissertation. / Ph. D.

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