Thesis(M.S.)--Auburn University, 2006. / Abstract. Vita. Includes bibliographic references.

Thesis (M. App. Sc.)--Carleton University, 2004. / Includes bibliographical references (p. 72-75). Also available in electronic format on the Internet.

Thesis (Ph. D.)--Michigan State University. Dept. of Electrical and Computer Engineering, 2008. / Title from PDF t.p. (viewed on July 23, 2009) Includes bibliographical references (p. 243-252). Also issued in print.

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Cressler, John D.; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen; Committee Member: Shen, Shyh-Chiang; Committee Member: Zhou, Hao Min.

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen.

Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007. / Cressler, John, Committee Chair ; Laskar, Joy, Committee Member ; Papapolymerou, Ioannis, Committee Member ; Zhou, Haomin, Committee Member ; Milor, Linda, Committee Member.

Orientador: Jacobus Willibrordus Swart / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-05T07:19:34Z (GMT). No. of bitstreams: 1 Goes_MarcosAugustode_M.pdf: 31444750 bytes, checksum: e7c5cce48b9c9ec73f1804fee26b6062 (MD5) Previous issue date: 2005 / Resumo: Esta dissertação de mestrado descreve o estudo, projeto e implementação de um receptor optoeletrônico integrado (OEIC) utilizando a tecnologia de transistores bipolares de heterojunção (HBT), fabricados a partir do material semicondutor arseneto de gálio. A grande vantagem deste transistor é o seu alto ganho e baixa resistência de base, o qual possibilita operações na faixa de gigahertz. A integração do estágio de fotodetecção, feita por um fotodiodo do tipo PIN, com o circuito de amplificação em um mesmo circuito integrado é possível, pois o fotodetector é construído com as camadas de base, coletor e subcoletor do transistor HBT. Com isso, as resistências, capacitâncias e indutâncias parasitas presentes na conexão entre estes dois estágios são minimizadas. Isto permite aos receptores monolíticos trabalharem em freqüências mais altas em relação aos receptores híbridos. O circuito fabricado opera com fontes de luz no comprimento de onda de 850 nm e pode ser utilizado em redes locais de curta distância (LAN) / Abstract: This master degree dissertation describes the study, project and implementation of an optoelectronic integrated circuit (OEIC) using the heterojunction bipolar transistors (HBT) technology over a gallium arsenide substrate. The major advantage of this transistor is its high gain and low base resistance, allowing operation at frequencies in the range of gigahertz. The integration of the photodetection stage, performed by a PIN photodetector, with the amplifier circuit in a single chip is possible because the photodetector is built from the base, collector and subcollector layers of the HBT transistor. Thus, the parasitic resistances, capacitances and inductances between the connection of these two stages are minimized. In this way, monolithic receivers can operate at higher frequencies than hybrid receivers. The fabricated circuit is intended to work with 850 nm light sources and can be used in local area networks (LAN) / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

M.Ing. (Electrical and Electronic Engineering) / The possibilities and technology of converters with an alternating voltage link are investigated for high specific power conversion at high frequencies. With a view to the functional description of these power converters, s i muLat i on techniques are considered for both system and circuit analysis. A thorough investigation is made into the design of high frequency power transformers, which play an important role in this class of power circuits. This includes a theoretical analysis in conjunction with the 'practical implementation of a design procedure for minimal eddy current losses in the windings as well as experimental work on losses in ferrite cores. For the remainder of the study, attention is focussed on the two pulse inverter which is responsible for the generation of the alternating voltage in the high frequency link. The suitability of bipolar and field effect transistors for power switching, is critically examined and a voltage compensation on the bipolar Darlington, which reduces on-state losses, yielded good results upon application. A study on the feasibility of non-dissipative snubber techniques on the centre tapped inverter is presented, thus supplying a practical way of reducing switching losses without affecting the efficiency of the system. An additional, yet simple, network is added to the snubber circuits of the two pulse inverter which is operational during low load conditions.' in order also to have low switching losses under these circumstances. Finally a 50 k~v, 10 kHz centre tapped inverter was developed and built.

Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第16862号 / 工博第3583号 / 新制||工||1541(附属図書館) / 29537 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 藤田 静雄, 准教授 浅野 卓 / 学位規則第4条第1項該当

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