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Dans les dernières années nombre de matériaux lamellaires à dimensions réduites ont démontré des propriétés optiques remarquables. Cependant, la plupart des études ont porté sur le système parfait et le rôle des défauts en tant que centres optiques actifs restent encore largement inexploré. Le nitrure de bore hexagonal (h-BN) est l'un des candidats les plus prometteurs pour les dispositifs émetteurs de lumière dans la région de l’UV lointain, présentant une forte émission excitonique à 5,8 eV. Cependant, émission n’apparaît uniquement que dans des monocristaux très purs qui peuvent difficilement être obtenus que par des procédés de synthèse complexes. Les échantillons ordinaires de h-BN présentent des spectres d'émission plus complexes qui ont été généralement été attribuée à la présence de défauts structuraux. Malgré un grand nombre d'études expérimentales jusqu'à présent il n'a pas été possible d'attribuer cette émission additionnelle à des défauts structuraux bien définis. Nous abordons ici cette question fondamentale en adoptant une approche théorique et expérimentale combinant une technique de cathodoluminescence nanométriquement résolu avec une caractérisation structural résolu atomiquement par microscopie électronique a transmission et de l'état de l'art de simulations excitoniques. Très récemment, l'équipe d'Orsay a mis au point un système de détection de cathodoluminescence intégré au sein d'un microscope électronique à transmission à balayage. Cette expérience unique est maintenant en mesure de fournir des spectres d'émission complet avec une résolution aussi faible que quelques dizaines de MeV associés à une taille de sonde électronique du nanomètre. Une image hyper-spectrale cathodoluminescence peut donc être enregistrée en parallèle avec une image HAADF. La cathodoluminescence résolu au nanomètre sur quelques-couche chimiquement exfoliée de h-BN a montré que les spectres d'émission sont fortement inhomogènes dans les feuillets individuels. Les pics d'émission à proximité de l'exciton libre apparaissent dans des régions étendues. Les examens complémentaires par microscopie électronique à transmission à haute résolution permettent d'associer ces raies d'émission avec des défauts étendue dans le cristal tels que les défauts d'empilement et les plis des facetter. Au moyen de calculs ab-initio dans le cadre de la « Many Body perturbation theory » (GW) et l'équation de Bethe-Salpeter nous fournissons une description détaillée de la structure électronique et la réponse spectroscopique du nitrure de bore hexagonal en présence de défaut d’empilements. En particulier, nous montrons un bon accord avec les résultats expérimentaux, les excitons supplémentaires sont associées à des changements de symétrie locaux qui se produisent par des fautes d'empilement dans le cristal. Ce résultat sera ensuite étendu à des nanotubes de BN à parois multiples. Des émissions supplémentaires qui apparaissent à l'intérieur du gap présentent une localisation spatiale élevée, typiquement inférieure à 100 nm, et par conséquent ils peuvent être liés à des défauts ponctuels individuels. Lorsqu’ils sont adressés individuellement à travers une sonde électronique très ciblé, ils pourraient avoir un caractère d’émetteur de photon unique. Cette hypothèse a été récemment confirmée par des expériences combinant notre système de cathodoluminescence avec un interféromètre Handburry-Brown et Twiss (HBT). / Within the latest years number of layered materials at reduced dimensions have demonstrated remarkable optical properties. However most studies focused on perfect system and the role of defects as optical active centers remain still largely unexplored. Hexagonal boron nitride (h-BN) is one of the most promising candidates for light emitting devices in the far UV region, presenting a single strong excitonic emission at 5.8 eV. However, a single line appears only in extremely pure mono-crystals that can hardly be obtained only though complex synthesis processes. Common h-BN samples present more complex emission spectra that have been generally attributed to the presence of structural defects. Despite a large number of experimental studies up to now it was not possible to attribute specific emission features to well identify defective structures. Here we address this fundamental question by adopting a theoretical and experimental approach combining few nanometer resolved cathodoluminescence techniques with high resolution transmission electron microscopy images and state of the art quantum mechanical simulations. Very recently, the Orsay team has developed a cathodoluminescence detection system integrated within a scanning transmission electron microscope. This unique experimental set up is now able to provide full emission spectra with a resolution as low as few tens of meV associated with an electron probe size of one nanometer. A cathodoluminescence hyper-spectral image can thus be recorded in parallel with an HAADF image. Nanometric resolved cathodoluminescence on few-layer chemically exfoliated h-BN crystals have shown that emission spectra are strongly inhomogeneous within individual flakes. Emission peaks close to the free exciton appear in extended regions. Complementary investigations through high resolution transmission electron microscopy allow to associate these emission lines with extended crystal deformation such as stacking faults and folds of the planes. By means of ab-initio calculations in the framework of Many Body Perturbation Theory (GW) approximation and Bethe-Salpeter equation) we provide an in-depth description of the electronic structure and spectroscopic response of bulk hexagonal boron nitride in the presence of extended morphological modifications. In particular we show that, in a good agreement with the experimental results, additional excitons are associated to local symmetry changes occurring at crystal stacking faults. These result will then be extended to faceted multiwalled BN nanotubes, they display additional emission at the same energy as characterized within the flakes.

This thesis explores the application of two-dimensional (2D) materials such as graphene and single layer hexagonal boron nitride (h-BN) which are produced by liquid phase exfoliation for use in printed electronics and energy composite applications. In Chapter 2 I give a broad overview of the electrical, mechanical and optical properties of 2D materials among other nanomaterials that were used in the thesis such as carbon nanotubes and conductive polymers. Additionally I review the techniques and theory behind the exfoliation and dispersion of functional layered materials. In Chapter 3 I present the coating and printing techniques which were used in this thesis along with the experimental techniques and methods which I use to characterise my inks, films and devices. Chapter 4 is the first experimental chapter of the thesis and demonstrates the printing of 2D material heterostructures to create fully printed dieletrically gated field effect transistors with 2D materials on textile and polymer substrates. In this chapter I also demonstrate reprogrammable volatile memory, p and n type inverters, complementary inverters, and logic gates which pave the way to fully printed integrated circuits, operational at room temperature and pressure with 2D materials processed in liquid. In Chapter 5, I review spray coating (a highly industrial scalable printing technique), in terms of the optimisation of its parameters to achieve thin films of nanomaterials on three-dimensional (3D) surfaces. I then demonstrate that it is possible to create large area (∼750 cm2) transparent conducting films around curved surfaces with spray coating enabling a semi-transparent (around 360°) spherical touch sensor for interactive devices. Chapter 6 explores printed photonics for applications in terahertz (THz) frequencies. Here I demonstrate the feasibility of liquid phase exfoliated graphene to create THz saturable absorbers (SAs) which could enable many applications in THz frequencies such as tomography or time-resolved spectroscopy that require mode-locked (i.e. enabling a train of short pulses to be derived from continuous-wave operation) THz pulses. I also demonstrate that these SAs can be inkjet printed on demand providing unprecedented compactness in a quantum cascade laser system. Finally in Chapter 7, I look at the application of graphene in microbial fuel cells (MFC). I demonstrate that enhanced MFC output arises from the interplay of the improved surface area, enhanced conductivity, and catalytic surface groups of a graphene based electrode. As a final step graphene based anodes and cathodes which were entirely platinum free were combined to create an environmentally sustainable energy source.

This thesis, submitted to the University of Manchester, covers a range of topics related to current research in two-dimensional materials under the title: 'Investigations into the interfacial interaction of graphene with hexagonal boron nitride.'In the last decade, two-dimensional materials have become a rich source of original research and potential applications. The main advantage lies in the ability to produce novel composite structures, so-called 'layered heterostructures', which are only a few atomic layers thick. One can utilise the unique properties of several species of crystal separately, or how they interact to realise a diverse range of uses. Two such crystals are graphene and hexagonal boron nitride. Hexagonal boron nitride has, so far, been used primarily as a substrate for graphene, allowing researchers to get the most out of graphene's impressive individual properties. However, in this thesis, the non-trivial van der Waals interaction between graphene and hexagonal boron nitride is examined. The interface potential reveals itself as a relatively large-scale, orientation-dependant superlattice, which is described in chapters 1 and 2.I In Chapter 4, the effect of this superlattice is examined by measurement of its effect upon the electrons in graphene, where its modulation leads to the creation of second and third generation Dirac points, revealing Hofstadter's Butterfly. As well as an excellent example of the physics possible with graphene, it also presents a new tool with which to create novel devices possessing tailored electronic properties. II In chapter 5, the consequential effect of the superlattice potential on the structure of graphene is studied. Results are discussed within the framework of the Frenkel-Kontorova model for a chain of atoms on a static background potential. Results are consistent with relaxation of the graphene structure leading to the formation of a commensurate ground state. This has exciting consequences for the production of heterostructures by demonstrating that alignment angle can have large effects upon the physical properties of the crystals. III In chapter 6, the van der Waals potential is shown to be responsible for the self-alignment of the two crystals. This effect is important for the fabrication of perfectly aligned devices and may lead to new applications based on nanoscale motion.

<p>In the history of Chemistry, materials chemists have developed their ideas mainly by doing experiments in laboratories. The underlying motivation for this laboratory work has generally been pure curiosity or the ambition to find a solution to a specific problem. Minor changes in the composition or structure of a material can cause major changes in its properties. The development of powerful computers has now opened up the possibility to calculate properties of new materials using quantum mechanical methods.</p><p>The Chemistry of different boron-related materials has been evaluated in this thesis by Density Functional Theory (DFT). Cubic boron nitride (c-BN) is a most interesting material for the microelectronics and tool industry. During thin film deposition of c-BN, several problems arise which most often result in unwanted BN isomorphs. Chemical processes at the (110) and (111) surface of c-BN have been investigated in order to shed light upon some of these complex processes. Typically adsorption energies and surface reconstruction were found to differ significantly between the two surfaces. </p><p>Other materials investigated are layered transition-metal diborides (MeB₂). Incorporation of transition-metal atoms into elemental boron in its most fundamental structure, ά-boron, has also been investigated. The calculations on MeB₂ focused on the stability of the planar compared to the puckered structure of MeB₂. Stability was investigated by calculating Density of States (DOS) and bond populations. Deviations in the cell parameters from their ideal values were also considered. </p><p>A separate project concerned reactivity of the TiB₂(001) surface. Molecular and dissociated adsorption energies and adsorption geometries were calculated for H₂, H₂O and O₂. It was concluded that the titanium surface was more reactive than the boron surface and that the adsorption energies were comparable to or stronger than other well known surface-active compounds like TiO₂.</p>

In the history of Chemistry, materials chemists have developed their ideas mainly by doing experiments in laboratories. The underlying motivation for this laboratory work has generally been pure curiosity or the ambition to find a solution to a specific problem. Minor changes in the composition or structure of a material can cause major changes in its properties. The development of powerful computers has now opened up the possibility to calculate properties of new materials using quantum mechanical methods. The Chemistry of different boron-related materials has been evaluated in this thesis by Density Functional Theory (DFT). Cubic boron nitride (c-BN) is a most interesting material for the microelectronics and tool industry. During thin film deposition of c-BN, several problems arise which most often result in unwanted BN isomorphs. Chemical processes at the (110) and (111) surface of c-BN have been investigated in order to shed light upon some of these complex processes. Typically adsorption energies and surface reconstruction were found to differ significantly between the two surfaces. Other materials investigated are layered transition-metal diborides (MeB2). Incorporation of transition-metal atoms into elemental boron in its most fundamental structure, ά-boron, has also been investigated. The calculations on MeB2 focused on the stability of the planar compared to the puckered structure of MeB2. Stability was investigated by calculating Density of States (DOS) and bond populations. Deviations in the cell parameters from their ideal values were also considered. A separate project concerned reactivity of the TiB2(001) surface. Molecular and dissociated adsorption energies and adsorption geometries were calculated for H2, H2O and O2. It was concluded that the titanium surface was more reactive than the boron surface and that the adsorption energies were comparable to or stronger than other well known surface-active compounds like TiO2.

Laser Chemical Vapor Deposition (LCVD) has been shown to have great potential for the manufacture of small, complex, two or three dimensional metal and ceramic parts. One of the most promising applications of the technology is in the fabrication of an integrated dispenser cathode assembly. This application requires the deposition of a boron nitridemolybdenum composite structure. In order to realize this structure, work was done to improve the control and understanding of the LCVD process and to determine experimental conditions conducive to the growth of the required materials. A series of carbon fiber and line deposition studies were used to characterize processshape relationships and study the kinetics of carbon LCVD. These studies provided a foundation for the fabrication of the first high aspect ratio multilayered LCVD wall structures. The kinetics studies enabled the formulation of an advanced computational model in the FLUENT CFD package for studying energy transport, mass and momentum transport, and species transport within a forced flow LCVD environment. The model was applied to two different material systems and used to quantify deposition rates and identify ratelimiting regimes. A computational thermalstructural model was also developed using the ANSYS software package to study the thermal stress state within an LCVD deposit during growth. Georgia Techs LCVD system was modified and used to characterize both boron nitride and molybdenum deposition independently. The focus was on understanding the relations among process parameters and deposit shape. Boron nitride was deposited using a B3N3H6-N2 mixture and growth was characterized by sporadic nucleation followed by rapid bulk growth. Molybdenum was deposited from the MoCl5-H2 system and showed slow, but stable growth. Each material was used to grow both fibers and lines. The fabrication of a boron nitridemolybdenum composite was also demonstrated. In sum, this work served to both advance the general science of Laser Chemical Vapor Deposition and to elucidate the practicality of fabricating ceramicmetal composites using the process.

In this thesis, bulk and local scale spectroscopic and microscopic tools have been applied to investigate the purified raw material of SWCNT and synthesized MWBNNT, BN-nanocapsules, B-doped SWCNT and SiC nanostructures. Using bulk scale sensitive techniques, including optical absorption spectroscopy, Raman spectroscopy, high-resolution electron energy-loss spectroscopy, the average response of the whole sample is obtained. On the other hand, on a local scale transmission and scanning electron microscopy as well as TEM-electron energy-loss spectroscopy provide information on single tubes or other nanostructures. First, diverse chemical and oxidation methods for the purification of as-produced SWCNT were presented. Purified samples were investigated using TEM and OAS. The analysis of the optical absorption spectra in the UV-Vis energy range revealed that some of the chemical treatments are harmful to nanotubes. In contrast to the chemical treatments an oxygen burning procedure was used on the raw material in high vacuum and a temperature range 450?650oC. The purification processes of SWCNT by HNO3 and oxygen burning procedures resulted in SWCNT comprised of selected diameters and a reduced diameter distribution. Both HNO3 and oxygen burning treatments can be used to selectively remove SWCNT with smaller diameters from the samples. In addition, an adapted substitution reaction was used for the synthesis of multiwall boron nitride nanotubes. It was shown that the IR-response of MWBNNT can be used as a fingerprint to analyse MWBNNT. As in h-BN for the analysis one has to be aware of the sample texture and the LO-TO splitting of the IR-active modes. TEM images and B1s and N 1s excitation edges of the grown material reveal the presence of multiwall BN nanotubes with an inner diameter of 3.1 nm and with a larger interplanar distance than in h-BN. The electronic properties of the multiwall BN nanotubes as derived from the q-dependent dielectric function e(w,q) are dominated by the band structure of the hexagonal-like BN sheets, as revealed by the large degree of momentum dispersion observed for the p and s+p plasmons, in agreement with that previously reported for different graphitic allotropic forms. Moreover, a fast and highly efficient synthesis route to produce BN nanocapsules with a narrow size distribution was developed. This was achieved by an adapted substitution process using SWCNT as templates followed by a rapid cooling treatment. The IR responses reveal the strong dipole active fingerprint lines of h-BN with distinct differences, which are due to texturing effects and which highlight the BN nanocapsules potential application as a reference source when deriving the sp2 to sp3 ratio in BN species due to their random orientation Furthermore, the idea of substitution was used for the systematic studies of B-doped SWCNT. The experiments carried out have resulted in 1, 5, 10, and 15 % boron incorporated into the single wall carbon nanotubes. Core level excitation spectroscopy of the B1s and C1s edges revealed that the boron atoms substitute carbon atoms in the tube lattice keeping an sp2-like bond with their nearest C neighbour atoms. Our results show that a simple rigid band model as has been applied previously to intercalated SWCNT is not sufficient to explain the changes in the electronic properties of highly doped B-SWCNT and a new type of a highly defective BC3 SWNT with new electronic properties is obtained. Finally, different silicon carbide nanostructures were produced. The spectroscopic and microscopic data led to a good understanding of the formation process. NH3 acts as a source of hydrogen that plays a key role in the formation of the structures through its ability to decompose SiC at high temperature such that along with the stacking faults that arise from the many polytypes of SiC the produced SiC nanorods become porous then hollow and eventually are completely decomposed.

Abstract: Micro­Raman Spectroscopy Investigation of Hard Coatings Diamond, silicon carbide, and boron nitride have attracted great interest in the last years, due to their excellent material properties. Especially the extreme hardness and the high thermal con­ ductivity of these materials favour them as protective layers. The very large hardness gave these materials, deposited as films on various substrates, their name: hard coatings. In contrast to di­ amond, silicon carbide and boron nitride can be n­ as well as p­doped, making them promising candidates for high speed and high temperature electronic applications. Contrarily to the materials mentioned above, carbon nitride was obtained in crystalline form just very recently. Up to now the deposited films mainly consist of amorphous or nanocrystalline, carbon­rich material. For all these material systems inelastic light scattering (Raman spectroscopy) has been already applied for the material properties investigation. However, these investigations usually were restricted to only one of the various Raman spectroscopy tools, described in this work: Incident laser light energy varia­ tion, temperature variation, utilizing the selection rules, measurements at varying sample positions, two­dimensional mappings and one­dimensional scans in the conventional plane­view and the addi­ tional cross­sectional sample geometry. In contrast to this, this work demonstrates the improvement of the information about the investigated material and/or the sample heterostructure obtained by using the combination of all the above mentioned techniques. In the case of the diamond material system, films deposited on silicon substrates were investigated and an interfacial graphitic layer of 2nm thickness was found by scanning across the interface, which was obscured in the conven­ tional plane­view sample geometry. Similar to this an ultra­thin top layer and buried intermixed regions were identified in the silicon carbide material system utilizing the cross­sectional sample geometry. In addition to this, the temperature and the incident laser light energy dependences for 5 SiC polytypes (3C, 4H, 6H, 15R, and 21R) were measured. A resonance enhancement for the 3C and the 21R polytype was found corresponding to their fundamental bandgaps at 2.46eV and ß2.8eV, respectively. For the other polytypes no resonance enhancement was found, due to their larger fundamental bandgap. In the boron nitride material system the spatial correlation model for Raman lineshape analysis was applied for the first time and the values of the asymmetric broad­ ening and the frequency downshift for decreasing crystal sizes were evaluated. This was measured for single crystals of different size and for films deposited on silicon substrates. The correlation lengths in the ten nanometer region found for the deposited films corroborate the nanocrystalline nature of these films. Additionally incident laser light energy was measured, revealing the 488.0nm (Ar + ) and 482.5nm (Kr + ) laser lines as the optimum laser lines for the boron nitride investigation. Furthermore the dependence of the phonon feature parameters was investigated depending on the incident laser light power. A maximum power of 5­10mW for the micro­Raman spectroscopy setup was found to avoid any laser light induced heating of the investigated material. Two­dimensional mappings of the deposited boron nitride films were performed to improve the information about the material system. In the case of carbon nitride for the first time distinct phonon features were measured in a wide spectral range contrarily to most of the other investigations, which usually show only broad bands.