In this study, photoluminescence properties of as grown, Ge implanted GaSe and InSe crystals with doses 1013, 1014, and 1015 ions/cm2 and 1015 ions/cm2 Ge implanted and annealed GaSe and InSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system have been studied by photoluminescence spectroscopy (PL). PL spectra of as grown and implanted GaSe samples with three different doses have been studied in the ranges within the wavelength interval 570-850 nm and in the temperature ranges between 21 and 110 K. Temperature dependencies of all observed bands revealed that the peak with highest energy has excitonic origin and most of the others originate from donor-acceptor pair recombination. For GaSe samples implanted with 1013 and 1015 ions/cm2 Ge, PL spectra exhibited four emission bands while for as grown and the sample implanted with 1014 ions/cm2 v Ge had three bands. Variations of emission peaks were studied as a function of temperature. It was observed that centers of all bands shifted towards red continuously with temperature. The intensities of the emission peaks showed similarities with those obtained from as grown, 1013 and 1014 ions/cm2 Ge implanted GaSe while the peak intensities of the sample implanted with 1015 ions/cm2 Ge decreased with the temperature continuously. Using the temperature variation of the peak intensities and peak energy values activation energies were obtained and these results revealed that the two bands with low wavelength to be excitonic origin for the implanted samples with the doses 1013 and 1015 ions/cm2 Ge. Similar results were obtained for the implanted with 1015 ions/cm2 Ge and annealed sample. The other two peaks observed for these samples were attributed to donor acceptor pair transitions. In addition, direct band gaps were found to be 2.12 eV at 32 K for as grown, 2.121 eV at 25 K for 1013 ions/cm2 Ge implanted, 2.121 eV at 21 K for 1014 ions/cm2 Ge implanted, 2.124 eV at 33 K for 1015 ions/cm2 Ge implanted GaSe samples and lastly 2.113 eV at 28 K for 1015 ions/cm2 Ge implanted and annealed GaSe. PL spectra of as grown, 1013, 1014, 1015 ions/cm2 Ge implanted, and 1015 ion/cm2 Ge implanted and annealed InSe samples were also obtained at 20 K. Two broad bands were observed in the spectrum of all InSe crystals and considered to be due to impurity levels within the materials.

Le phénomène de démouillage est caractérisé par la croissance d'un cristal sans contact avec la paroi du creuset due à l'existence d'un ménisque liquide au niveau de l'interface solide-liquide. Ceci crée un espace de quelques dizaines de micromètres entre le cristal et le creuset dans lequel il est élaboré et une des conséquences immédiates de ce phénomène est la nette amélioration de la qualité du cristal. Dans le cas du démouillage, la forme du ménisque est décrite par l'équation de Young-Laplace à partir de laquelle on a pu établir le système des équations différentielles non-linéaires qui décrivent l'évolution du rayon du cristal et de la hauteur du ménisque en fonction de diverses perturbations. L'intérêt réside dans la possibilité d'étudier numériquement, à partir de ces équations, les solutions stationnaires, leur stabilité, statique et dynamique, et d'effectuer une étude de la sensibilité des solutions vis-à-vis des paramètres du procédé et des conditions initiales.

In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the electrical properties of as-grown, as-implanted and annealed samples within the temperature range of 80-400 K. To investigate the annealing effect on both the absorption and photoluminescence (PL) spectra, absorption and PL measurements were performed at room temperature. N-implantation reduced the resistivity order from 103 to 101 (&amp / #937 / -cm). We have used temperature dependent conductivity and Hall effect measurements to analyze the dominant scattering mechanisms. Hall measurements showed that all the samples had n-type conduction. Absorption measurements showed that InSe had direct band gap. It was observed that annealing had almost no effect an both room temperature absorption and PL spectra of the samples.

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The thesis work consists of two parts. First, the development of two-dimensional numerical models of a Bridgman unidirectional solidification furnace, and second, the construction work of the furnace at KTH. The aim is to build a Bridgman furnace which is capable of close control over temperature gradient and growth rate such that the solidification structures of a duplex stainless steel (SAF2507) could be replicated at a laboratory scale for different cooling rates.Two numerical models of Bridgman furnace are created using COMSOL Multiphysics. The models are used as predictive tools to simulate the locations of solidification front and the temperature gradients at the solidification fronts, which are parameters difficult to access during experiments. Different hot zone temperatures of the furnace (1500~1550 °C) and different sample pulling rates (0.5~10 mm/s) are studied in simulations. The major finding from modeled results is that the temperature gradient of the sample at the solidification fronts range from 5 ~ 17 K/mm, which are lower than the furnace temperature gradient of ~50 K/mm. The corresponding steady-state cooling rates range between 5 ~ 85 K/s. The next step is to validate the models with experimental temperature profiles of the furnace, and decide whether the furnace design should be modified to achieve the cooling rates of interests. / Examensarbetet består av två delar. Först utvecklingen av tvådimensionella numeriska modeller av en Bridgman enkelriktad stelningsugn, och för det andra konstruktionsarbetet för ugnen vid KTH. Syftet är att bygga en Bridgman-ugn som har förmåga att kontrollera temperaturgradienten och tillväxthastigheten så att stelningsstrukturerna i ett duplex-rostfritt stål (SAF2507) skulle kunna replikeras i laboratorieskala för olika kylningshastigheter. Två numeriska modeller av Bridgman-ugnen skapas med COMSOL Multiphysics. Modellerna används som prediktiva verktyg för att simulera placeringen av stelningsfronten och temperaturgradienterna vid stelningsfronterna, vilket är parametrar som är svåra att komma åt under experiment. Olika varmzonstemperaturer i ugnen (1500~1550 °C) och olika provdragningshastigheter (0.5~10 mm/s) studeras i simuleringar. Det viktigaste fyndet från modellerade resultat är att provets temperaturgradient vid stelningsfronterna sträcker sig från 5 ~17 K/mm, vilket är lägre än ugns temperaturgradient på ~ 50 K/mm. Motsvarande stabilitetskylningshastigheter varierar mellan 5 ~ 85 K/s. Nästa steg är att validera modellerna med experimentella temperaturprofiler för ugnen och bestämma om ugnsutformningen ska modifieras för att uppnå intressens kylningshastigheter.

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This work focuses on discovery and development of novel binary halide scintillation materials for radiation detection applications. A complete laboratory for raw materials handling, ampoule preparation, material rapid synthesis screening, single crystal growth, sample cutting, polishing and packaging of hygroscopic halide scintillation materials has been established. Ce3+ and Eu2+ activated scintillators in three binary systems: Alkali Halide – Rare Earth Halide (AX–REX3), Alkali Halide – Alkaline Earth Halide (AX–AEX2) and Alkalin Earth Halide – Rare Earth Halide (AEX2–REX3) were systematically studied. Candidates for new scintillation materials in the three systems were selected based on a set of selection rules. A total of 42 Ce3+ or Eu2+ activated binary halide scintillation material candidates were synthesized and characterized. Among all synthesized candidates, 10 - 15 candidate materials were found to be highly promising in terms of high scintillation light output, fast scintillation decay or desirable emission wavelength. Three most promising candidates, Cs3EuI5, CsGd2Cl7:Ce3+ and CsSrI3:Eu2+ were selected for single crystal growth and further evaluation. Technologies for single crystal growth of hygroscopic halide scintillation materials were developed. Detailed design of experimental apparatuses was discussed. Single crystals were successfully grown via Bridgman or Vertical Gradient Freeze techniques. Study on optical and scintillation properties was performed. Possibility of using CsGd2Cl7:Ce3+ as a neutron detector was confirmed. CsSrI3:Eu2+ shows extraordinary scintillation light output (73,000 ph/MeV), excellent energy resolution (3.9%) and ease for crystal growth. A scaled-up crystal growth was carried out. A bulk crystal of 1” diameter CsSrI3:Eu2+ was successfully grown. Energy level structure and charge carrier traps in CsSrI3:Eu2+ were investigated. Potential of CsSrI3:Eu2+ in various radiation detection applications were evaluated.

Bei der Vertical Gradient Freeze-Züchtung von Halbleiterkristallen bis zu einem Durchmesser von 2″ wurde in einer speziell entwickelten Anlage die Beeinflussung des Wärme- und Stofftransports in der Schmelze durch ein rotierendes Magnetfeld (RMF) untersucht. An GaAs- und Ge-Kristallen konnte bei Einwirkung des RMF eine verminderte Durchbiegung der Phasengrenze aufgrund geringerer radialer Temperaturgradienten festgestellt werden. Die Analyse der Segregationsprozesse ergab unter RMF-Einfluss signifikante Änderungen der Ausdehnung der Diffusionsgrenzschicht vor der Phasengrenze. Dies spiegelte sich in einer verbesserten axialen und radialen Homogenität der Ladungsträgerverteilung in den Kristallen wider. Die kritische magnetische Taylor-Zahl, die den Übergang von stationärer zu instationärer RMF-Konvektion charakterisiert, konnte für verschiedene Geometrieverhältnisse der Schmelze experimentell bestimmt werden.