The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. Furthermore, Schottky barrier source/drain technology presents a promising solution to reducing the parasitic source/drain resistance in the FinFET. The ultimate goal of this thesis is to integrate Schottky barrier source/drain in FinFETs, with an emphasis on process development and integration towards competitive devices. First, a robust sidewall transfer lithography (STL) technology is developed for mass fabrication of Si-nanowires in a controllable manner. A scalable self-aligned silicide (SALICIDE) process for Pt-silicides is also developed. Directly accessible and uniform NWs of Ni- and Pt-silicides are routinely fabricated by combining STL and SALICIDE. The silicide NWs are characterized by resistivity values comparable to those of their thin–film counterparts. Second, a systematic experimental study is performed for dopant segregation (DS) at the PtSi/Si and NiSi/Si interfaces in order to modulate the effective SBHs needed for competitive FinFETs. Two complementary schemes SIDS (silicidation induced dopant segregation) and SADS (silicide as diffusion source) are compared, and both yield substantial SBH modifications for both polarities of Schottky diodes (i.e. φbn and φbp). Third, Schottky barrier source/drain MOSFETs are fabricated in UTB-SOI. With PtSi that is usually used as the Schottky barrier source/drain for p-channel SB-MOSFETs, DS with appropriate dopants leads to excellent performance for both types of SBMOSFETs. However, a large variation in position of the PtSi/Si interface with reference to the gate edge (i.e., underlap) along the gate width is evidenced by TEM. Finally, integration of PtSi NWs in FinFETs is carried out by combining the STL technology, the Pt-SALICIDE process and the DS technology, all developed during the course of this thesis work. The performance of the p-channel FinFETs is improved by DS with B, confirming the SB-FinFET concept despite device performance fluctuations mostly likely due to the presence of the PtSi-to-gate underlap. / QC 20100923

The nano-age has already begun, where typical feature dimensions are smaller than 100nm. The operating frequency is expected to increase up to 12 GHz, and a single chip will contain over 12 billion transistors in 2020, as given by the International Technology Roadmap for Semiconductors (ITRS) initiative. ITRS also predicts that the scaling of CMOS devices and process technology, as it is known today, will become much more difficult as the industry advances towards the 16nm technology node and further. This aggressive scaling of CMOS technology has pushed the devices to their physical limits. Design goals are governed by several factors other than power, performance and area such as process variations, radiation induced soft errors, and aging degradation mechanisms. These new design challenges have a strong impact on the parametric yield of nanometer digital circuits and also result in functional yield losses in variation-sensitive digital circuits such as Static Random Access Memory (SRAM) and flip-flops. Moreover, sub-threshold SRAM and flip-flops circuits, which are aggravated by the strong demand for lower power consumption, show larger sensitivity to these challenges which reduces their robustness and yield. Accordingly, it is not surprising that the ITRS considers variability and reliability as the most challenging obstacles for nanometer digital circuits robust design. Soft errors are considered one of the main reliability and robustness concerns in SRAM arrays in sub-100nm technologies due to low operating voltage, small node capacitance, and high packing density. The SRAM arrays soft errors immunity is also affected by process variations. We develop statistical design-oriented soft errors immunity variations models for super-threshold and sub-threshold SRAM cells accounting for die-to-die variations and within-die variations. This work provides new design insights and highlights the important design knobs that can be used to reduce the SRAM cells soft errors immunity variations. The developed models are scalable, bias dependent, and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit optimization as well as technology prediction. The derived models are verified using Monte Carlo SPICE simulations, referring to an industrial hardware-calibrated 65nm CMOS technology. The demand for higher performance leads to very deep pipelining which means that hundreds of thousands of flip-flops are required to control the data flow under strict timing constraints. A violation of the timing constraints at a flip-flop can result in latching incorrect data causing the overall system to malfunction. In addition, the flip-flops power dissipation represents a considerable fraction of the total power dissipation. Sub-threshold flip-flops are considered the most energy efficient solution for low power applications in which, performance is of secondary importance. Accordingly, statistical gate sizing is conducted to different flip-flops topologies for timing yield improvement of super-threshold flip-flops and power yield improvement of sub-threshold flip-flops. Following that, a comparative analysis between these flip-flops topologies considering the required overhead for yield improvement is performed. This comparative analysis provides useful recommendations that help flip-flops designers on selecting the best flip-flops topology that satisfies their system specifications while taking the process variations impact and robustness requirements into account. Adaptive Body Bias (ABB) allows the tuning of the transistor threshold voltage, Vt, by controlling the transistor body voltage. A forward body bias reduces Vt, increasing the device speed at the expense of increased leakage power. Alternatively, a reverse body bias increases Vt, reducing the leakage power but slowing the device. Therefore, the impact of process variations is mitigated by speeding up slow and less leaky devices or slowing down devices that are fast and highly leaky. Practically, the implementation of the ABB is desirable to bias each device in a design independently, to mitigate within-die variations. However, supplying so many separate voltages inside a die results in a large area overhead. On the other hand, using the same body bias for all devices on the same die limits its capability to compensate for within-die variations. Thus, the granularity level of the ABB scheme is a trade-off between the within-die variations compensation capability and the associated area overhead. This work introduces new ABB circuits that exhibit lower area overhead by a factor of 143X than that of previous ABB circuits. In addition, these ABB circuits are resolution free since no digital-to-analog converters or analog-to-digital converters are required on their implementations. These ABB circuits are adopted to high performance critical paths, emulating a real microprocessor architecture, for process variations compensation and also adopted to SRAM arrays, for Negative Bias Temperature Instability (NBTI) aging and process variations compensation. The effectiveness of the new ABB circuits is verified by post layout simulation results and test chip measurements using triple-well 65nm CMOS technology. The highly capacitive nodes of wide fan-in dynamic circuits and SRAM bitlines limit the performance of these circuits. In addition, process variations mitigation by statistical gate sizing increases this capacitance further and fails in achieving the target yield improvement. We propose new negative capacitance circuits that reduce the overall parasitic capacitance of these highly capacitive nodes. These negative capacitance circuits are adopted to wide fan-in dynamic circuits for timing yield improvement up to 99.87% and to SRAM arrays for read access yield improvement up to 100%. The area and power overheads of these new negative capacitance circuits are amortized over the large die area of the microprocessor and the SRAM array. The effectiveness of the new negative capacitance circuits is verified by post layout simulation results and test chip measurements using 65nm CMOS technology.

Power has become an important design closure parameter in today’s ultra low submicron digital designs. The impact of the increase in power is multi-discipline to researchers ranging from power supply design, power converters or voltage regulators design, system, board and package thermal analysis, power grid design and signal integrity analysis to minimizing power itself. This work focuses on challenges arising due to increase in power to power grid design and analysis. Challenges arising due to lower geometries and higher power are very well researched topics and there is still lot of scope to continue work. Traditionally, designs go through average IR drop analysis. Average IR drop analysis is highly dependent on current dissipation estimation. This work proposes a vector less probabilistic toggle estimation which is extension of one of the approaches proposed in literature. We have further used toggles computed using this approach to estimate power of ISCAS89 benchmark circuits. This provides insight into quality of toggles being generated. Power Estimation work is further extended to comprehend with various state of the art methodologies available i.e. spice based power estimation, logic simulation based power estimation, commercially available tool comparisons etc. We finally arrived at optimum flow recommendation which can be used as per design need and schedule. Today’s design complexity – high frequencies, high logic densities and multiple level clock and power gating - has forced design community to look beyond average IR drop. High rate of switching activities induce power supply fluctuations to cells in design which is known as instantaneous IR drop. However, there is no good analysis methodology in place to analyze this phenomenon. Ad hoc decoupling planning and on chip intrinsic decoupling capacitance helps to contain this noise but there is no guarantee. This work also applies average toggle computation approach to compute instantaneous IR drop analysis for designs. Instantaneous IR drop is also known as dynamic IR drop or power supply noise. We are proposing cell characterization methodology for standard cells. This data is used to build power grid model of the design. Finally, the power network is solved to compute instantaneous IR drop. Leakage Power Minimization has forced design teams to do complex power gating – multilevel MTCMOS usage in Power Grid. This puts additonal analysis challenge for Power Grid in terms of ON/OFF sequencing and noise injection due to it. This work explains the state of art here and highlights some of the issues and trade offs using MTCMOS logic. It further suggests a simple approach to quickly access the impact of MTCMOS gates in Power Grid in terms of peak currents and IR drop. Alternatively, the approach suggested also helps in MTCMOS gate optimization. Early leakage optimization overhead can be computed using this approach.

<p>The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. This thesisinvestigates both unconventional materials for the gate stackand the channel and a novel notched-gate device architecture,with the emphasis on the challenging issues in processintegration.</p><p>High-κ gate dielectrics will become indispensable forCMOS technology beyond the 65-nm technology node in order toachieve a small equivalent oxide thickness (EOT) whilemaintaining a low gate leakage current. HfO₂and Al₂O₃as well as their mixtures are investigated assubstitutes for the traditionally used SiO₂in our MOS transistors. These high-κ filmsare deposited by means of atomic layer deposition (ALD) for anexcellent control of film composition, thickness, uniformityand conformality. Surface treatments prior to ALD are found tohave a crucial influence on the growth of the high-κdielectrics and the performance of the resultant transistors.Alternative gate materials such as TiN and poly-SiGe are alsostudied. The challenging issues encountered in processintegration of the TiN or poly-SiGe with the high-k are furtherelaborated. Transistors with TiN or poly-SiGe/high-k gate stackare successfully fabricated and characterized. Furthermore,proof-of-concept strained-SiGe surface-channel pMOSFETs withALD high-κ dielectrics are demonstrated. The pMOSFETs witha strained SiGe channel exhibit a higher hole mobility than theuniversal hole mobility in Si. A new procedure for extractionof carrier mobility in the presence of a high density ofinterface states found in MOSFETs with high-κ dielectricsis developed.</p><p>A notched-gate architecture aiming at reducing the parasiticcapacitance of a MOSFET is studied. The notched gate is usuallyreferred to as a local thickness increase of the gatedielectric at the feet of the gate above the source/drainextensions. Two-dimensional simulations are carried out toinvestigate the influence of the notched gate on the static anddynamic characteristics of MOSFETs. MOSFETs with optimizednotch profile exhibit a substantial enhancement in the dynamiccharacteristics with a negligible effect on the staticcharacteristics. Notched-gate MOSFETs are also experimentallyimplemented with the integration of a high-κ gatedielectric and a poly-SiGe/TiN bi-layer gate electrode.</p><p><b>Key words:</b>CMOS technology, MOSFET, high-κ, gatedielectric, ALD, surface pre-treatment, metal gate, poly-SiGe,strained SiGe, surface-channel, buried-channel, notchedgate.</p>

The nano-age has already begun, where typical feature dimensions are smaller than 100nm. The operating frequency is expected to increase up to 12 GHz, and a single chip will contain over 12 billion transistors in 2020, as given by the International Technology Roadmap for Semiconductors (ITRS) initiative. ITRS also predicts that the scaling of CMOS devices and process technology, as it is known today, will become much more difficult as the industry advances towards the 16nm technology node and further. This aggressive scaling of CMOS technology has pushed the devices to their physical limits. Design goals are governed by several factors other than power, performance and area such as process variations, radiation induced soft errors, and aging degradation mechanisms. These new design challenges have a strong impact on the parametric yield of nanometer digital circuits and also result in functional yield losses in variation-sensitive digital circuits such as Static Random Access Memory (SRAM) and flip-flops. Moreover, sub-threshold SRAM and flip-flops circuits, which are aggravated by the strong demand for lower power consumption, show larger sensitivity to these challenges which reduces their robustness and yield. Accordingly, it is not surprising that the ITRS considers variability and reliability as the most challenging obstacles for nanometer digital circuits robust design. Soft errors are considered one of the main reliability and robustness concerns in SRAM arrays in sub-100nm technologies due to low operating voltage, small node capacitance, and high packing density. The SRAM arrays soft errors immunity is also affected by process variations. We develop statistical design-oriented soft errors immunity variations models for super-threshold and sub-threshold SRAM cells accounting for die-to-die variations and within-die variations. This work provides new design insights and highlights the important design knobs that can be used to reduce the SRAM cells soft errors immunity variations. The developed models are scalable, bias dependent, and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit optimization as well as technology prediction. The derived models are verified using Monte Carlo SPICE simulations, referring to an industrial hardware-calibrated 65nm CMOS technology. The demand for higher performance leads to very deep pipelining which means that hundreds of thousands of flip-flops are required to control the data flow under strict timing constraints. A violation of the timing constraints at a flip-flop can result in latching incorrect data causing the overall system to malfunction. In addition, the flip-flops power dissipation represents a considerable fraction of the total power dissipation. Sub-threshold flip-flops are considered the most energy efficient solution for low power applications in which, performance is of secondary importance. Accordingly, statistical gate sizing is conducted to different flip-flops topologies for timing yield improvement of super-threshold flip-flops and power yield improvement of sub-threshold flip-flops. Following that, a comparative analysis between these flip-flops topologies considering the required overhead for yield improvement is performed. This comparative analysis provides useful recommendations that help flip-flops designers on selecting the best flip-flops topology that satisfies their system specifications while taking the process variations impact and robustness requirements into account. Adaptive Body Bias (ABB) allows the tuning of the transistor threshold voltage, Vt, by controlling the transistor body voltage. A forward body bias reduces Vt, increasing the device speed at the expense of increased leakage power. Alternatively, a reverse body bias increases Vt, reducing the leakage power but slowing the device. Therefore, the impact of process variations is mitigated by speeding up slow and less leaky devices or slowing down devices that are fast and highly leaky. Practically, the implementation of the ABB is desirable to bias each device in a design independently, to mitigate within-die variations. However, supplying so many separate voltages inside a die results in a large area overhead. On the other hand, using the same body bias for all devices on the same die limits its capability to compensate for within-die variations. Thus, the granularity level of the ABB scheme is a trade-off between the within-die variations compensation capability and the associated area overhead. This work introduces new ABB circuits that exhibit lower area overhead by a factor of 143X than that of previous ABB circuits. In addition, these ABB circuits are resolution free since no digital-to-analog converters or analog-to-digital converters are required on their implementations. These ABB circuits are adopted to high performance critical paths, emulating a real microprocessor architecture, for process variations compensation and also adopted to SRAM arrays, for Negative Bias Temperature Instability (NBTI) aging and process variations compensation. The effectiveness of the new ABB circuits is verified by post layout simulation results and test chip measurements using triple-well 65nm CMOS technology. The highly capacitive nodes of wide fan-in dynamic circuits and SRAM bitlines limit the performance of these circuits. In addition, process variations mitigation by statistical gate sizing increases this capacitance further and fails in achieving the target yield improvement. We propose new negative capacitance circuits that reduce the overall parasitic capacitance of these highly capacitive nodes. These negative capacitance circuits are adopted to wide fan-in dynamic circuits for timing yield improvement up to 99.87% and to SRAM arrays for read access yield improvement up to 100%. The area and power overheads of these new negative capacitance circuits are amortized over the large die area of the microprocessor and the SRAM array. The effectiveness of the new negative capacitance circuits is verified by post layout simulation results and test chip measurements using 65nm CMOS technology.

Cette thèse présente une étude de faisabilité d'un récepteur faible coût et faible consommation pour l'extension du standard DVS-S à la mobilité. L'objectif de ce projet est de proposer de solutions pour lever les verrous technologiques quant à la réalisation d'un tel système en technologie CMOS 65 nm. Ce manuscrit de thèse articulé autour de quatre chapitres décrit toutes les étapes depuis la définition des spécifications du réseau d'antennes et de la chaîne de réception jusqu'à la présentation de leurs performances, en passant par l'étude de leurs architectures et de la conception des différents blocs. Suite à l'étude au niveau système et au bilan de liaison, le démonstrateur envisagé est constitué d'un réseau d'antennes (huit sous-réseaux de huit antennes microruban) suivi de la mise en parallèle de huit chemins unitaires pour satisfaire les exigences (Gain, facteur de bruit, rapport signal-à-bruit...) de l'application visée. Ce travail a abouti à la démonstration de la faisabilité d'une architecture innovante. Par ailleurs, nous avons aussi démontré sa non-application pour le standard DVB-S en raison des limitations en bruit de la technologie CMOS. Cependant des pistes existent pour améliorer le rapport signal-à-bruit du démonstrateur, à savoir l'utilisation d'un LNA (Low Noise Amplifier) avec une technologie compétitive en bruit et/ou d'un traitement du signal après la démodulation en bande par un processeur analogique. / This work focuses on the faisability of a low cost and low power receiver in order to extend the DVB-S standard to mobility. The objective of this project is to suggest solutions to overcome technological bottlenecks fot the realization of such a demonstrator with 65 nm CMOS technology. This report composed of four chapters, describes all steps from the specification definition to the performances of the antenna array and the receiver through the architecture study and the different blocks design. [...]

With the proliferation of industries world-wide, there is a growing need and interest in sensing and monitoring environmental pollutants and monitoring the concentration of chemicals/gases in industrial process control. There is also an increasing demand for chemical sensors in other applications such as home security, breath analysis and food processing. Design and development of metal-oxide based gas sensor system is reported in this thesis. The system consists of three components viz. micro heater(which aids inheating the sensor film to required temperatures), CMOS ASIC (the sensor interface circuit) and the thin film transducer(a semiconducting metal oxide thin film whose resistance changes with the concentration of the target gas). Microheaters were realized through PolyMUMPs process. Thermal characterization of surface-micromachined microheaters is carried out from their dynamic response to electrothermal excitations. An electrical equivalent circuit model is developed for the thermo-mechanical system. The mechanical parameters are extracted from the frequency response obtained using a Laser Doppler Vibrometer. The resonant frequencies of the microheaters are measured and compared with FEM simulations. The thermal time constants are obtained from the electrical equivalent model by fitting the model response to the measured frequency response. Microheaters with an active area of140m × 140m have been realized on two different layers(poly-1 andpoly-2) with two different air-gaps (2m and 2.75m). The effective time constants, combining thermal and mechanical responses, are intherangeof0.13msto0.22msforheatersonpoly-1,and1.9s to0.15ms for microheaters on poly-2 layer. The thermal time constants of the best microheaters are in the range of a few s, thus making them suitable for sensor applications that need faster thermal response. The mechanical deformation of the microheaters subjected to an electrothermal excitation, due to thermal stress, is also analyzed using lensless in-line digital holographic microscopy (DHM). The numerically reconstructed holographic images of the micro-heaters clearly indicate the regions under high stress. Double exposure method has been used to obtain the quantitative measurements of the deformations, from the phase analysis of the hologram fringes. The measured deformations correlate well with the theoretical values predicted by a thermo-mechanical analytical model. The results show that lensless in-line DHM with Fourier analysis is an effective method for evaluating the thermo-mechanical characteristics of MEMS components. A sensor interface circuit comprising a resistance-to-time period converter as the front-end circuit and a proportional temperature controller to control the microheater temperature is designed and realized in 130nm UMC CMOS technology. The impact of biasing the transistors in subthreshold versus saturation conditions on analog circuit performance is systematically analyzed. A cascode current mirror, designed in 130nm CMOS technology, is biased in subthreshold and saturation regions and its performance has been analyzed through rigorous analytical modeling. The analytical results have been validated with SPICE simulations. It is demonstrated that the subthreshold operation provides better performance in terms of linearity, power, area, output impedance and tolerance to temperature variation, making it a preferable option for applications such as signal conditioning circuitry for environmental sensors. On the other hand, biasing the circuit in saturation is preferable for applications like transceivers and data converters where high bandwidth, SNR and low sensitivity to process variations are the key requirements. Based on this analysis, a sensor interface circuit has been prototyped for resistance measurement on 130nm CMOS technology, using subthreshold cascode current mirrors as the key building blocks. This current mirror results in 14X lower power compared to above-threshold operation. The interface circuit spans 5 orders of magnitude of resistance, and consumes an ultra low power of 326W. A proportional temperature controller with an integrated on-chip power MOSFET is also realized on the same chip for heating and temperature control of microheaters. The microheater is reused as temperature sensor. The entire circuit works with 1.2V supply, except the power MOSFET and the heater driver circuit, which operate with 3.3V supply. ZnO, a semiconducting metal-oxide, is used as the sensing material. Thin films of ZnO are spin-coated over insulating substrates using sol-gel processing technique. Gold pads deposited over the sensing film act as electrodes. The sensor film is characterized at different temperatures for its sensitivity to ethanol. A peak response of 14% change in resistance is observed for 5ppm ethanol, at a working temperature of 275◦C.

This master’s thesis deals with half-wave and full-wave rectifiers and instrumentation amplifier design in CMOS technology, suitable for biomedical signal processing. Properties of optional solutions are analyzed and appropriate circuits are designed. Their functionality is verified with simulation. Designed circuits are then used to form a circuit converting differential input voltage into rectified output current.

This Master`s thesis deals with properties of current feedback operational amplifier. The main goal of this work is creation design process of current feedback operational amplifier by using CMOS technology AMIS 0,7 µm. Next goal of this work is attestation of funciton our design process. Last goal is creation the datasheet of our amplifier.

The work deals with the design and optimization of amplifiers in CMOS technology with low supply voltage and low power consumption. The main aim is to design an amplifier to amplify the biological signal. The first part is a brief introduction to the theory of biological signals. The work also contains a brief description of the biological signal processing methods and their properties. The important part is the description of the methods to reduce the supply voltage of the amplifier. The practical part of this thesis focuses on the design amplifiers with low supply voltage and low power consumption. All active elements and application examples have been verified by PSpice simulator using the 0.18 µm TSMC CMOS parameters. Simulated plots are included in this thesis to illustrate behavior of structures.