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METAL-BINDING PROPERTIES OF SYNTHETIC METALLOPROTEINSKharenko, Olesya A. 13 September 2005 (has links)
No description available.
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FORMATION OF C-C COVALENT BOND ON THE SURFACE OF POLY (CHLOROTRIFLUOROETHYLENE) BY SUBSTITUTIONMazi, Wafa A. 13 December 2010 (has links)
No description available.
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Carbon Single Wall Nanotubes: Low Barrier, Cu- Free Back Contact to CdTe Based Solar CellsKhanal, Rajendra R. 20 August 2014 (has links)
No description available.
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Effects of Dietary Cu, Zn and Mn on Bovine Neutrophil FunctionDietz, Ashlee Marie 22 May 2015 (has links)
No description available.
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Investigation into Catalytic Metallodrugs that Target Hepatitis C IRES RNA: Development, Characterization, and MechanismRoss, Martin James January 2015 (has links)
No description available.
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Microstructural study and modeling of metastable phases and their effect on strenghthening in Al-Mg-Cu-Si alloying systemKovarik, Libor 08 August 2006 (has links)
No description available.
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Estimates of Interfacial Properties in Cu/Ni Multilayer Thin Films using Hardness and Internal Stress DataCarpenter, John Stuart 02 November 2010 (has links)
No description available.
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Enhancement of the Deposition Processes of Cu(In,Ga)Se2 and CdS Thin Films via In-situ and Ex-situ Measurements for Solar Cell ApplicationRanjan, Vikash 18 May 2011 (has links)
No description available.
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Corrosion Mechanism and Prevention of Wire Bonded Device in Microelectronic Manufacturing and Spectroscopic Investigation of Copper Etch Chemical Equilibria for High Density Interconnect ApplicationAshok Kumar, Goutham Issac 12 1900 (has links)
In the first part of this dissertation work, Al bond pad corrosion behavior was investigated in the presence of common industrial contaminants such as chloride (Cl-) and fluoride (F-). Al corrosion while in direct contact with Cu displayed rapid hydrogen (H2) gas evolution and dendrite propagation. In contrast, Al without bimetallic contact showed only minor surface roughening. This observed difference in the corrosion mechanism between Cl- and F- is attributed to the solubility of the corrosion products (AlCl3 vs. AlF3) formed on the Al surface. Our subsequent work explored corrosion prevention inhibition of wire-bonded devices (WBD) in the Cl- environment. Our research shows that the Al bond pad was protected against corrosion by chemically modifying the surface of the Cu wires, thereby preventing the H2 evolution. The inhibitor was observed to be highly selective, thermally stable, hydrophobic, and cost-effective, making it viable for industrial application of this coating for Al bond pad corrosion prevention. In the second part of the dissertation work, we utilized a novel approach of using ultraviolet-visible spectroscopy (UV-Vis) as a chemical-sensitive monitoring tool of the chemical environment in Cu etch bath. The UV-Vis technique illuminates the roles of H+, Cl-, Cu+, and Cu2+ to the etch bath while also providing a means to monitor the Cl- in the broad UV peak at 250 nm. The UV-Vis probe successfully demonstrated the etch rate difference between the two etch bath solutions and help in the restoration of the etching bath. Additionally, the proof-of-concept experiments (POC) to investigate UV enhanced etching for achieving anisotropic etching in PCB fabrication showed promising preliminary results with the need to develop additional etching techniques.
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Processing and Properties of Die-attachment on Copper Surface by Low-temperature Sintering of Nanosilver PasteZheng, Hanguang 30 May 2012 (has links)
As the first level interconnection in electronic packages, chip attachment plays a key role in the total packaging process. Sintered nanosilver paste may be used as a lead-free alternative to solder for die-attachment at sintering temperature below 300 °C without applying any pressure. Typically, the substrate, such as direct bond copper (DBC) substrates, has surface metallization such as silver or gold to protect the copper surface from oxidation during the sintering process. This study focused on developing techniques for die-attachment on pure copper surface by low-temperature sintering of nanosilver paste. One of the difficulties lies in the need for oxygen to burn off the organics in the paste during sintering. However, the copper surface would oxidize, preventing the formation of a strong bond between sintered silver and copper substrate.
Two approaches were investigated to develop a feasible technique for attachment. The first approach was to reduce air pressure as a means of varying the oxygen partial pressure and the second approach was to introduce inert gas to control the sintering atmosphere. For the first method, die-shear tests showed that increasing the oxygen partial pressure (PO₂ from 0.04 atm to 0.14 atm caused the bonding strength to increase but eventually decline at higher partial pressure. Scanning electron microscopy (SEM) imaging and energy dispersive spectroscopy (EDS) analysis showed that there was insufficient oxygen for complete organics burnout at low PO₂ condition, while the copper surface was heavily oxidized at high PO₂ levels, thus preventing strong bonding. A maximum bonding strength of about average 8 MPa was attained at about PO₂ = 0.08 atm. With the second method, the die-shear strength showed a significant increase to about 24 MPa by adjusting the oxygen exposure temperature and time during sintering.
The processing conditions necessary for bonding large-area chips (6 mm à 6 mm) directly on pure copper surface by sintering nanosilver paste was also investigated. A double-print process with an applied sintering pressure of less than 5 MPa was developed. Die-shear test of the attached chips showed an average bonding strength of over 40 MPa at applied pressure of 3 MPa and over 77 MPa under 12 MPa sintering pressure. SEM imaging of the failure surface showed a much denser microstructure of sintered silver layer when pressure was applied. X-ray imaging showed a bond layer almost free of voids. Because the samples were sintered in air, the DBC surface showed some oxidation. Wirebondability test of the oxidized surface was performed with 250 μm-diameter aluminum wires wedge-bonded at different locations on the oxidized surface. Pull test results of the bonded wires showed a minimum pull-strength of 400 gram-force, exceeding the minimum of 100-gf required by the IPC-TM-650 test standard. / Master of Science
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