Metalorganic Chemical Vapour Deposition (MOCVD) is a versatile technique for the deposition of thin films of oxide materials as it offers advantages, such as deposition over large surface area, conformal coverage, selective area deposition, and a high degree of compositional control. The MOCVD process uses metalorganic (MO) complexes, such as β-diketonate and alkoxide-based complexes, as precursors. These complexes are stable and moderately volatile. Because of the direct bond between metal and oxygen, MO complexes are natural precursors for oxide coatings. As the process involves chemical reactions taking place on the substrate surface, growth of thin films by MOCVD depends on various parameters such as the chemical nature and concentration of precursors, reaction pressure, reaction temperature, and the nature of the substrate. Such a large parameter space of the CVD process, when combined with the dynamics (thermodynamics and fluid dynamics) and kinetics, makes it rather complex. This complexity allows one to make thin films of metastable phases, including amorphous materials. One of the important findings of the work is that MOCVD process is capable of making composite coatings of carbonaceous metal oxide. Manganese is multivalent and forms various stable oxides, such as MnO, Mn2O3, Mn3O4 and MnO2. There are various potential applications of manganese oxides. MnO2 is a very well studied material for its electrochemical applications in dry cells, lithium-ion batteries, and in supercapacitors. Hence, it becomes pertinent to explore the properties of thin films of manganese oxides prepared by MOCVD for various electrochemical and other applications. The thesis work is divided into two parts. Part 1 describes the synthesis of manganese complexes, their characterization, and their application to the CVD of coatings, especially those of carbonaceous MnO. Part 2 is devoted to a detailed study of electrochemical aspects of the carbonaceous MnO coatings, followed by a report on their unusual transport properties. Chapter 1 begins with a brief introduction to thin film deposition processes. In particular, the CVD process is described with reference to various parameters such as carrier gas flow, pressure, temperature and most importantly, the CVD precursor. The chapter ends with a description of the scope of the work undertaken for the present thesis. Chapter 2 deals with “Synthesis and Characterization of MO complexes”. It begins with a description of the classification of CVD precursors with the description of MO complexes such as β-diketonates, which are generally subliming crystalline solids. Manganese β-diketonate complexes are discussed in detail. Due to the multivalent nature of Mn, there are two possible complexes namely Mn(acac)2(H2O)2 and Mn(acac)3. These complexes have been synthesised and characterized (confirmed) by various techniques, such as elemental analysis (CHN), X-ray diffraction (XRD), FTIR spectroscopy, and mass spectroscopy. Thermal analysis of the complexes shows that they are suitable as MOCVD precursors. We have used Mn(acac)2(H2O)2 as a precursor in the present work. Metalorganic complexes, where metal ion is directly bonded with both nitrogen and oxygen, can be potential candidates for the precursor for oxynitrides coatings. We have therefore studied solid crystalline anthranilate complexes of various metal ions, such as Mn2+, Co2+, Cu2+ and Zn2+ and confirmed their formation. Thermal analysis shows that anthranilate complexes are fairly volatile below 250oC and decompose below 500oC. These complexes were pyrolysed in open air and in sealed tube at different temperatures, and the resulting powder product examined by XRD, SEM, EDAX and FTIR. This preliminary study shows that anthranilate complexes yield different oxides of Mn, Co and Cu under different pyrolysis conditions, with very interesting morphological features. Pyrolysis of Zn(aa)2 in a sealed tube leads to the formation of a nanocomposite of carbon and zinc oxide (wuerzite), rich in carbon, with potential for applications in catalysis. On the other hand, the pyrolysis of Zn(aa)2 in air at the same temperature leads to leads to crystalline, nanostructured zinc oxide (wuerzite). However, no attempt has been made to use these anthranilates as CVD precursors. Chapter 3 deals with “MOCVD of Manganese Oxides and their Characterization”. It begins with a brief review of various manganese oxides and their properties. This is followed by description of the CVD reactor used for the present work, together with the conditions employed for the deposition of MnOx films. Depositions have been carried out on different substrates such as SS-316, ceramic alumina and Si (111), while varying various deposition parameters, viz., substrate, reactor pressure, carrier gas (argon) flow rate, and the duration of deposition. Significantly, depositions are divided into two categories: one, carried out in argon ambient, in the absence of a supply of oxygen (or any other oxidant) and the second one, under oxygen flow, using argon as carrier gas. The films deposited in the absence of oxygen flow are thick, black in colour, and electrically conducting, indicating the presence of carbon. The growth rate follows a typical thermal pattern, with activation energy of ~ 1.7 eV. Detailed characterization by XRD, TEM/ED, Raman, FTIR and XPS (X-ray photoelectron spectroscopy) shows that these films are composed of MnO in a carbon-rich amorphous matrix. High-resolution SEM (fig. 1) reveals a fractal pattern of cauliflower morphology, comprising very fine particles (4 – 10 nm), characteristic of very large specific surface area of the film, which is confirmed by volumetric BET measurement (~2000 m2/g). We conclude that growth in argon ambient leads to a homogenous nanocomposite film of hydrated MnO in carbon-rich matrix. Thus, our study reveals that MOCVD is a novel one-step chemical method to produce homogenous composite thin films, wherein all components of the nanocomposite film emerge from the same chemical precursor. Carbon incorporation is generally avoided by empirical process design, as it is viewed as an impurity. The potential advantages of carbon incorporation are thus not examined and the composite nature of carbonaceous films not recognized in the literature. Carbonaceous nanocomposite film can be significant as an electrode in supercapacitors, as discussed in part 2 of the thesis. Chapter 3 describes films deposited under oxygen flow, which are no longer black and are highly resistive, indicating the absence of carbon in the film, as confirmed by Raman spectroscopy. XRD, FTIR and Raman spectroscopy reveal that the films obtained under oxygen flow are more crystalline than the ones obtained in the absence of oxygen flow, and that the films are generally nanocrystalline composites of two manganese oxides, such as MnO and Mn3O4. Given the context of the carbonaceous MnO films described above, chapter 4 begins with a review of electrochemical capacitors (also called supercapacitors or ultracapacitors), which are emerging as important energy storage devices. Until now, in the Mn-O system, hydrated MnO2 has been well-studied as an electrode material due to its low cost and environmental compatibility, but the low electrical conductivity of MnO2, together with irreversible redox reactions, reduces its performance. In electrochemical capacitor applications, metal-oxide/carbon composites are finding importance. Chapter 4 deals with “MnO/C Nanocomposite Coatings as Electrodes for Electrochemical Capacitor”. In this chapter, we have examined the novel EM, i.e., the hydrated MnO/C nanocomposite coating prepared by the MOCVD process on a conducting substrate (current collector) such as SS-316 as an electrode. Electrochemical measurements have been carried out for both the 3-electrode assembly (for basic aqueous electrolyte) and 2-electrode assembly (for gel polymer electrolyte) using cyclic voltammetry (CV), AC impedance and charge-discharge techniques. The studies lead to a maximum specific capacitance of 230 – 270 F/g at 1 mA/cm2 discharge current density for the MnO/C nanocomposite coating grown at 680oC. The Bode plot shows a maximum phase angle of around 74 – 82o, indicating capacitive behaviour. The MnO/C nanocomposite film shows a very small time constant (0.5 – 3 msec), which is good for high frequency applications. The pulse power figure of merit is found to be 650 – 2000 W/g. Capacitance determined for a large number of charge-discharge cycles (~20000), and at large current densities (50 mA/cm2) show promising results. The energy density (5 - 32 Wh/kg) and power density (2 – 4 kW/kg) estimated from charge-discharge data at 1 mA/cm2 shows the potential of the nanocomposite MnO/C as electrode for superior capacitor devices. Gel polymer electrolytes (GPE) offer the advantage of large electrochemical potential window due to its structural and chemical stability. Studies have been carried out to show that the MnO/C nanocomposite film is compatible with gel polymer electrolytes based on poly(methyl methacrylate) (PMMA) and poly(acrylonitrile) (PAN) with salts of magnesium triflate and magnesium perchlorate, respectively) and plasticizers (ethylene carbonate (EC) + propylene carbonate (PC)), in a 2-electrode assembly. Chapter 5 deals with “Magnetoconductance in MnO/C Nanocomposite Coatings on Alumina”. Amorphous systems, such as MnO/C composites wherein carbon is amorphous and MnO is nearly so, are highly symmetric condensed phases, which do not possess long range translational or orientational order. Disorder in the system creates Anderson localized states just above the valence band, which lead to reduced electrical conductivity. Amorphous systems show either a small negative magnetoresistance (~ 5%) or a small positive magnetoconductance (~ 7%) at very low temperatures (~ 10 K). As such, the transport properties of the MnO/C nanocomposite film have been investigated, and are reported in chapter 5. Transport and magnetotransport measurements have been made on the MnO/C nanocomposite film grown on alumina. It is found that the MnO/C nanocomposite coating exhibits a giant negative MR (22.3%) at a temperature as high as 100 K, which is unusual because pure MnO is anti-ferromagnetic and does not ordinarily show any magnetoresistance (MR), while amorphous carbon is known to show a small MR at very low temperatures (~7 K), due to weak-localization. The present results mean that a mechanism other than weak-localization plays a role in this nanocomposite material. Further study of this material is called for, which can perhaps lead to giant magnetoresistance (GMR) at room temperature in a metal-oxide/carbon nanocomposite. A summary of the work and an outlook for further research are given in the concluding chapter 6.

Thin film nanostructures may be defined as assemblies, arrays, or randomly distributed nanoparticles, nanowires, or nanotubes, which together form a layer of materials supported on a substrate surface. Because such nanostructures are supported on a substrate surface, their potential applications cover a wide area in optical, magnetic, electrochemical, electromagnetic, and optoelectronic devices. The focus of the present thesis is the development of methodologies to grow certain thin film nanostructures of some transition metal oxides (TMOs), including copper oxides and LixCoO2, through CVD, sol-gel, and electromagnetic radiation-mediated approaches. The work towards this objective can be divided into three parts: first, the design, synthesis, and systematic identification of novel metalorganic precursors of copper (monometallic) and Li and Co (bimetallic); second, the growth of nanostructured oxides thin films using these precursors; and third, the application of electromagnetic radiation to control or tailor the growth of as grown nanostructures. The underlying growth mechanisms substantiated by appropriate evidence have been put forward, wherever found relevant and intriguing. It may be added that the principal objective of the work reported here has been to explore the several ideas noted above and examine possibilities, rather than to study any specific one of them in significant detail. It is hoped earnestly that this has been accomplished to a reasonable extent. Chapter 1 reviews briefly the reports available in the literature on three specific methods of growing thin films nanostructures, namely chemical vapour deposition, sol-gel processing and light-induced approach. The objective of this chapter has been to provide the background of the work done in the thesis, and is substantiated with a number of illustrative examples. Some of the fundamental concepts involved, viz., plasmons and excitons, have been defined with illustration wherever found relevant in the context of the work. Chapter 2 describes the various techniques used for synthesis and characterisation of the metalorganic complexes as well as of the thin films. This chapters covers mostly experimental details, with brief descriptions of the working principles of the analytical procedures adopted, namely, infrared spectroscopy, mass spectroscopy, elemental analysis, and thermal analysis for characterisation of the metalorganic complexes. This is followed by a similarly brief account of techniques employed to characterize the thin films prepared in this work, viz., glancing incidence X-ray diffraction (GIXRD), field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), electrostatic force microscopy (EFM), transmission electron microscopy (TEM), glancing incidence infra-red spectroscopy (GIIR) and, UV-visible spectroscopy. The metalorganic chemical vapour deposition (MOCVD) systems built in house and used for growth of films are described in detail. The topics in the different sections of the chapter are accompanied by pertinent diagrams. Chapter 3 deals with the design, synthesis and characterisation of novel polynuclear complexes of copper and cobalt. Keeping in mind the various advantages such as low toxicity, ease of synthesis, non-pyrophoricity, and low temperature volatility, of environmentally benign complexes based on biologically compatible such as triethanolamine, diethanolamine, the objective has been to synthesize complexes containing triethanolamine and diethanolamine of transition metals such as cobalt and copper, and to investigate their applicability in MOCVD processes as a novel class of precursors. With the notion of ‘better’ and efficient design of precursors, an attempt has been made, through a semi-empirical modeling, to understand the correlation between volatility and various intrinsic molecular parameters such as lattice energy, vibrational-rotational energy, and internal symmetry. Chapter 4 discusses the growth of nanoporous Cu4O3-C composite films through the MOCVD process employing Cu4(deaH)(dea)(oAc)5.(CH3)2CO as the precursor. The various characteristic aspects of as-grown films, such as their crystallinity, morphology, and composition have been covered elaborately in various sections of this chapter. The chapter describes the efficient guiding and confining of light exploiting the photonic band gap of these nanoporous films, which indicates the potential usefulness of these and similar films as optical waveguides. A model described in the literature on absorbing photonic crystals, wherein a periodically modulated absorption entails an inevitable spatial modulation of dispersion, i.e., of the index contrast to open a photonic band gap, has been used to calculate the indices of refraction of one of these nanoporous films. The chapter also reports briefly the preliminary electrochemical investigations carried out on a typical film, examining the notion of its application as the anode in a Li-ion rechargeable battery. Chapter 5 describes the synthesis of nanocrystalline LixCoO2 films by the sol-gel method. Reports available in literature indicate that the various phases of LixCoO2 are extremely sensitive to processing temperature, making it difficult to control dimensionality of a given phase using temperature as one of process parameters. We have investigated the possibility of using incoherent light to tailor the particle size/shape of this material. The as-grown and irradiated films were characterised by X-ray diffraction, and by microscopic and spectroscopic techniques.Optical spectroscopy was carried out in order to gain insight into the physico-chemical mechanism involved in such structural and morphological transformation. Chapter 6 deals with the synthesis of self-assembled nanostructures from the pre-synthesized nanocrystals building blocks, through optical means of exciton formation and dissociation. It has been demonstrated that, upon prolonged exposure to (incoherent) ultraviolet-visible radiation, LixCoO2 nanocrystals self-assemble into acicular architectures, through intermediate excitation of excitons. Furthermore, it has been shown that such self-assembly occurs in nanocrystals, which are initially anchored to the substrate surface such as that of fused quartz. This new type of process for the self-assembly of nanocrystals, which is driven by light has been investigated by available microscopic and spectroscopic techniques. Chapter 7 describes the stabilisation of chemically reactive metallic lithium in a carbonaceous nanostructure, viz., a carbon nanotube, achieved through the MOCVD process involving a lithium-alkyl moiety. This moiety is formed in situ during deposition through partial decomposition of a metalorganic precursor synthesized in house, which contains both lithium and cobalt. It is surmised that the stabilization of metallic Li in the nanostructure in situ occurs through the partial decomposition of the metalorganic precursor. Quantitative X-ray photoelectron spectroscopy carried out on such a film reveals that as much as 33.4% metallic lithium is trapped in carbon. Lastly, Chapter 8 briefly highlights the outlook for further investigations suggested by the work undertaken for this thesis. Novel precursors derived from biologically compatible ligands can open up possibility of growing new type of micro/nano-structures, and of unusual phases in the CVD grown films. Furthermore, it is proposed that the novel method of growth and alignment of nanocrystals through irradiation with incoherent light, employed for the specific material LixCoO2, may be employed for various other metallic and semiconducting materials.

No description available.

The master’s thesis deals with the theory of thin film technology, especially creating these layers. The work includes the distribution of vacuum deposition techniques for physical (PVD) and chemical (CVD). The main aim is to create a theme in different ways of implementation by using magnetron sputtering device, and these motives evaluated in terms of the quality of sputtering.

D. Tech. (Department of Chemistry, Faculty of Applied and Computer Sciences), Vaal University of Technology. / In this study, few layer graphene (Gr) and heteroatom graphene (HGr) were synthesized by chemical vapour deposition (CVD) method. Acetylene gas was used as carbon source for the synthesis of graphene, while a mixture of nitrobenzene and dichloromethane (ratio 1:1) were used as both carbon and dopant sources for the synthesis of the heteroatom graphene (HGr). A mixture of argon and nitrogen gases were carefully combined and used as carrier gasses and purge for both the synthesis of graphene and the synthesis of heteroatom graphene. X-ray diffraction (XRD) characterized showed that the as synthesized materials were crystalline materials, Raman spectroscopy indicated that the synthesized materials consist of sp2 hybridized carbon atoms, while scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that the synthesized materials possess regions of 2 to 7 nm of thickness. Transmission electron microscopy (TEM) characterization also showed that the synthesized heteroatom graphene possesses about 5 to 7 layers with about 2 nm thickness, and x-ray photoelectron spectroscopy (XPS) result showed the presence of nitrogen, oxygen and chlorine in the lattice of the synthesized heteroatom graphene while the synthesized material still retained about 80% sp2 hybridization. The synthesized materials were used in the fabrication of modified bioelectrodes for electrobiocatalytic biosensing of glucose and hydroquinone. The fabricated bioelectrodes were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The CV characterization showed a diffusion-controlled electrode processes in al modified electrodes, while the EIS characterization showed the presence of both diffusion controlled and kinetic controlled impedance at the electrode-electrolyte interface. The fabricated GC/PEDOT-PSS/HGr/Lac modified bioelectrode exhibited a kinetic controlled impedance of 3150 Ω, while the fabricated GC/PEDOT-PSS/Gr/Lac modified bioelectrode exhibited a kinetic controlled impedance of 4138 Ω. Chronoamperometric experiments showed that the fabricated bioelectrodes exhibited swift electrobiocatalytic activity towards glucose and hydroquinone sensing respectively for graphene and heteroatom graphene. The graphene modified bioelectrode exhibited a linear response of 0.2 to 9.8 mM glucose concentration and a sensitivity of 87.0 μA/mM/cm2, while the heteroatom modified bioelectrode also exhibited a swift response to step by step addition of hydroquinone with a limit of detection of 2.07 μM and dynamic range of 2.07μM to 2.97 mM, thus indicating the tremendous potential of the materials in a wide range of electrobiocatalytic and bioelectronics applications.

Les matrices céramiques autocicatrisantes sont constituées d’une alternance de couches de SiC, B-C et Si-B-C, déposées par voie gazeuse (CVD). Les couches borées (Si)-B-C sont amorphes après élaboration et leur structure évolue à haute température (T ≥ 1000 °C). Diverses caractérisations (XRD, spectroscopie Raman, NMR, diffusion des neutrons, XANES) ont permis de préciser la structure locale des céramiques brutes d'élaboration. Celle-ci a par la suite été validée par des simulations par dynamique moléculaire ab initio. Elle est constituée de motifs icosaédriques, similaires à ceux de B4C, mais fautés et reliés entre eux par des environnements tétravalents CB4-xCx et trivalents BC3. Dans le cas des matériaux Si-B-C, cette même phase amorphe forme un continuum incluant des clusters de SiC. L’évolution structurale de ces céramiques sous atmosphère inerte a été étudiée en fonction de la température (1100°C ≤ T ≤ 1400 °C) et du temps (t ≤ 1 h). Le caractère métastable des matériaux induit une cinétique de réorganisation rapide. L'évolution structurale se traduit successivement, à T et t croissants, par l’apparition de carbone libre sp2, la cristallisation de B4C, ainsi que la croissance de nanocristallites de SiC dans les matériaux Si-B-C. Les propriétés mécaniques ont également été caractérisées à haute température à l’aide d’essais sur microcomposites Cf/(Si)-B-Cm. Les matériaux font preuve d’un comportement transitoire complexe et fortement dépendant de la température du fait de leur évolution structurale. / Self-healing matrices are composed of SiC, B-C and Si-B-C multilayers deposited by chemical vapour deposition (CVD). The boron-rich layers (Si)-B-C are amorphous in their as-deposited state but crystallize at high temperature (T ≥ 1000 °C). Various analyses (XRD, Raman spectroscopy, NMR, neutron diffraction, XANES) were used to characterize the local structure of the as-processed and heat-treated ceramics. The local structure of heat-treated ceramics was also confirmed by molecular dynamic ab initio simulations. The structure consists of icosahedral units as in B4C but faulted and connected with each other through tetrahedral CB4-XCX and trigonal BC3 sites. In Si-B-C ceramics, the same amorphous phase forms a continuum embedding SiC clusters. The structural evolution of the ceramics in inert atmosphere were studied as a function of temperature (1100°C ≤ T ≤ 1400 °C) and time (t ≤ 1 h). The metastability of the materials leads to fast kinetics of reorganization. When T and t increase, one observes successively the formation free-sp2 carbon, the crystallization of B4C and, in Si-B-C ceramics, the coarsening of the SiC nanocrystallites. The high temperature mechanical properties have also been assessed by tensile tests on Cf/(Si)-B-Cm microcomposites. The materials undergo a complex transient behaviour which is strongly temperature dependent due to the structural changes.

This thesis describes the deposition of thin films of titanium oxide and Magnéli phases of titanium oxide by atomic layer deposition (ALD) using a novel β-ketoesterate precursor. Titanium oxide is a promising candidate for the high-k dielectric gate oxide layer for CMOS devices in microelectronic circuits. The Magnéli phases of titanium oxide are difficult to grow and stabilize, especially in the thin film form, and have useful properties. The thin film deposition of oxides by CVD/ALD requires suitable precursors, which are often metalorganic complexes. The estimation of vapour pressure using thermogravimetry is described, and employed, using an approach based on the Langmuir equation. This data is important for the evaluation of the suitability of these complexes as CVD precursors. The first chapter gives a brief introduction to the topics that will be discussed in this thesis. Part one of the thesis deals with the synthesis, characterization, and studies of the vapour pressure and partial pressures of the precursors for CVD. This part comprises of the second, third and fourth chapter. The second chapter deals with the synthesis and characterization of the various metalorganic complexes that have been synthesized and characterized to evaluate their suitability as precursors for CVD. The third chapter describes the derivation of vapour pressure of precursors for CVD and ALD, from rising temperature thermogravimetric analysis (TGA) data, using the Langmuir equation. The fourth chapter deals with the determination of partial pressure of CVD precursors using data from low-pressure thermogravimetry. Part Two of the thesis reports the deposition of titanium oxide thin films by ALD, and the detailed investigation of their properties, for application as high-k dielectric materials. Chapters five, six and seven constitute this part. The fifth chapter deals with the deposition of titanium oxide thin films by ALD. Chapter six describes the electrical characterization of the thin films of titanium oxide, for applications as high-k dielectric gate oxide layers for CMOS circuits. In the seventh chapter, the deposition of Magnéli phases of titanium by ALD is described. The dielectric properties of the films are studied.

Im Hinblick auf das immense Potential von Diamant als Material für die Mikroelektronik wurden im Rahmen dieser Arbeit undotierte und dotierte Diamantfilme mittels chemischer Gasphasenabscheidung auf Silizium präpariert und anschließend auf ihre elektronischen Eigenschaften hin untersucht. Für Letzteres wurde hauptsächlich die Elektronen-Energieverlustspektroskopie in Transmission verwendet. In situ Gasphasendotierung oder Ionenimplantation wurde zur Dotierung der Filme mit Bor, Lithium oder Phosphor eingesetzt. Bei der Ionenimplantation wurde aufgrund der Erzeugung von Strahlenschäden generell eine Erhöhung des sp2-Anteils beobachtet: Letzterer konnte jedoch im Falle der Bordotierung durch eine, den Implantationsprozeß folgende, Hochtemperaturtemperung wieder deutlich vermindert werden. Für die in situ Dotierung mit Bor wurde eine Verringerung des sp2-Gehaltes mit steigender Dotierkonzentration gefunden. Für den Film mit der höchsten Borkonzentration konnte auch die B1s Absorptionskante untersucht werden. Sie gibt Hinweise auf den überwiegenden Einbau der Boratome in einer tetragonalen Orientierung. Das hiermit verbundene Vorhandensein von Akzeptoren führt zu elektronischen Anregungen im Energiebereich der Bandlücke, welche mittels Infrarotspektroskopie und EELS nachgewiesen werden konnten. Aus den EELS Messungen lassen sich Akzeptorkonzentrationen berechnen, welche wiederum den hohen Anteil an tetraedrisch eingebauten Boratomen bestätigen. Desweiteren untersucht wurden, als interessante Materialklasse mit weitreichendem technologischem Potential, undotierte und stickstoffdotierte, diamantartige amorphe Kohlenstoffilme und hierbei insbesondere die Abhängigkeit der elektronischen und optischen Eigenschaften von der Ionenenergie und dem Stickstoffpartialdruck während der Filmpräparation. Die Plasmonenergien, Massendichten, sp3-Anteile und die optischen Bandlücken der Filme wurden quantitativ bestimmt, wobei das jeweilige Maximum bei einer Ionenenergie von 100 eV gefunden wurde. Alle eben genannten Größen verringern sich kontinuierlich mit zunehmendem Stickstoffanteil. Eine Kramers-Kronig Analyse der Verlustspektren gibt Zugriff auf den Real- und Imaginärteil der dielektrischen Funktion und damit auf das Spektrum der Einteilchenanregungen. Die Hybridisierung der Kohlenstoff- und der Stickstoffatome wurde detailliert aus den jeweiligen 1s Absorptionskanten bestimmt. Weiterhin wurde Diamant als Modellsystem eines Festkörpers mit rein kovalenten Bindungen untersucht, insbesondere die Verlustfunktion von Diamant entlang mehrerer Hochsymmetriekristallrichtungen über einen großen Energie- und Impulsbereich. Aus den EELS Messungen erschließt sich unmittelbar die stark anisotrope Plasmonendispersion von Diamant. Aus dem Vergleich der experimentellen Spektren mit ab initio LDA Rechnungen, die sowohl Kristallokalfeldeffekte als auch Austausch- und Korrelationseffekte beinhalten, lassen sich direkt Rückschlüsse auf den Einfluß der verschiedenen Effekte ziehen. Schon im optischen Limit, aber umso mehr mit steigendem Impulsübertrag q, wird eine Überlagerung der kollektiven Plasmonanregung mit Einteilchenanregungen im Energiebereich des Plasmons beobachtet, woraus eine Kopplung zwischen beiden Arten von Anregungen resultiert. Abgesehen vom deutlichen Einfluß der Bandstruktur auf die Plasmonendispersion läßt die überaus inhomogene Elektronenverteilung von Diamant auf nicht zuvernachlässigende Kristallokalfeldeffekte schließen. Der Vergleich zwischen experimentellen und berechneten Spektren zeigt deutlich, wie die Kristallokalfeldeffekte in der Tat mit steigendem Impulsübertrag an Gewicht zunehmen und die Struktur der Verlustfunktion mitbestimmen. / In the context of the immense potential of diamond as a material for use in the microelectronics industry, in this thesis pristine and doped diamond films have been deposited on silicon using chemical vapour deposition. Subsequently their electronic properties have been investigated using mainly electron energy-loss spectroscopy. Doping of the films with boron, lithium or phosphorous was carried out either via in-situ gas phase doping during film growth or using ion implantation. Upon ion implantation an increase of the carbon content with sp2 hybridisation has generally been found due to ion beam induced damage. In the case of boron doping it was possible to significantly reduce this sp2-contribution using a high temperature anneal. For the in-situ doping with boron, upon increasing doping concentration a decrease of the sp2-contribution was found. For the sample with the highest boron content the boron 1s absorption edge could also be investigated, providing evidence for the preferential incorporation of the boron atoms into tetrahedrally co-ordinated sites. This boron incorporation leads to the existence of electronic excitations in the energy range of the band gap, which could be observed using both infrared and electron energy-loss spectroscopy. From the electron energy-loss measurements it was possible to calculate acceptor concentrations which were consistent with the large amount of tetrahedrally co-ordinated boron atoms. A second theme in this thesis involved the study of pristine and nitrogen doped diamond-like amorphous carbon films, which are an interesting material class with far-reaching technological potential. Here the focus of the research concerned the dependency of the electronic and optical properties of the films upon the ion energy and the nitrogen partial pressure applied during the film preparation. The plasmon energies, mass densities, sp3 contribution and the optical band gaps of the samples were determined quantitatively, whereby the maximum in all these quantities was found to occur for ion energies of 100 eV. Furthermore, all of these characteristics were found to decrease continually with increasing nitrogen content. A Kramers-Kronig analysis of the loss spectra enabled the derivation of the real and imaginary parts of the dielectric function and with this of the complete spectrum of single particle excitations. The hybridization between the carbon and nitrogen atoms was also studied in detail from the analysis of the respective 1s absorption edges. Furthermore this thesis deals with the investigation of diamond as a model system for solids with pure covalent bonds. In particular, the loss function of diamond was measured along different high symmetry directions over a wide range of energy and momentum. Firstly, the EELS measurements showed directly the strongly anisotropic nature of the plasmon dispersion in diamond. Secondly, by the comparison of the experimental spectra with ab initio LDA-based calculations that include crystal local field effects as well as exchange and correlation contributions, conclusions can be drawn as to the influence of these quantities. In the optical limit, but even more so with increasing momentum transfer q, a superposition of the collective plasmon excitation and the single particle excitations in the energy range of the plasmon is observed. This energetic proximity results in a coupling between both types of excitations. Apart from the distinct influence of the bandstructure on the plasmon dispersion, the considerably inhomogeneous electron distribution of diamond would lead one to expect significant crystal local field effects in this system. The comparison between the experimental and the calculated spectra shows explicitly that the crystal local field effects increase with increasing momentum transfer and play an important role in defining the structure of the loss function.

Im Hinblick auf das immense Potential von Diamant als Material für die Mikroelektronik wurden im Rahmen dieser Arbeit undotierte und dotierte Diamantfilme mittels chemischer Gasphasenabscheidung auf Silizium präpariert und anschließend auf ihre elektronischen Eigenschaften hin untersucht. Für Letzteres wurde hauptsächlich die Elektronen-Energieverlustspektroskopie in Transmission verwendet. In situ Gasphasendotierung oder Ionenimplantation wurde zur Dotierung der Filme mit Bor, Lithium oder Phosphor eingesetzt. Bei der Ionenimplantation wurde aufgrund der Erzeugung von Strahlenschäden generell eine Erhöhung des sp2-Anteils beobachtet: Letzterer konnte jedoch im Falle der Bordotierung durch eine, den Implantationsprozeß folgende, Hochtemperaturtemperung wieder deutlich vermindert werden. Für die in situ Dotierung mit Bor wurde eine Verringerung des sp2-Gehaltes mit steigender Dotierkonzentration gefunden. Für den Film mit der höchsten Borkonzentration konnte auch die B1s Absorptionskante untersucht werden. Sie gibt Hinweise auf den überwiegenden Einbau der Boratome in einer tetragonalen Orientierung. Das hiermit verbundene Vorhandensein von Akzeptoren führt zu elektronischen Anregungen im Energiebereich der Bandlücke, welche mittels Infrarotspektroskopie und EELS nachgewiesen werden konnten. Aus den EELS Messungen lassen sich Akzeptorkonzentrationen berechnen, welche wiederum den hohen Anteil an tetraedrisch eingebauten Boratomen bestätigen. Desweiteren untersucht wurden, als interessante Materialklasse mit weitreichendem technologischem Potential, undotierte und stickstoffdotierte, diamantartige amorphe Kohlenstoffilme und hierbei insbesondere die Abhängigkeit der elektronischen und optischen Eigenschaften von der Ionenenergie und dem Stickstoffpartialdruck während der Filmpräparation. Die Plasmonenergien, Massendichten, sp3-Anteile und die optischen Bandlücken der Filme wurden quantitativ bestimmt, wobei das jeweilige Maximum bei einer Ionenenergie von 100 eV gefunden wurde. Alle eben genannten Größen verringern sich kontinuierlich mit zunehmendem Stickstoffanteil. Eine Kramers-Kronig Analyse der Verlustspektren gibt Zugriff auf den Real- und Imaginärteil der dielektrischen Funktion und damit auf das Spektrum der Einteilchenanregungen. Die Hybridisierung der Kohlenstoff- und der Stickstoffatome wurde detailliert aus den jeweiligen 1s Absorptionskanten bestimmt. Weiterhin wurde Diamant als Modellsystem eines Festkörpers mit rein kovalenten Bindungen untersucht, insbesondere die Verlustfunktion von Diamant entlang mehrerer Hochsymmetriekristallrichtungen über einen großen Energie- und Impulsbereich. Aus den EELS Messungen erschließt sich unmittelbar die stark anisotrope Plasmonendispersion von Diamant. Aus dem Vergleich der experimentellen Spektren mit ab initio LDA Rechnungen, die sowohl Kristallokalfeldeffekte als auch Austausch- und Korrelationseffekte beinhalten, lassen sich direkt Rückschlüsse auf den Einfluß der verschiedenen Effekte ziehen. Schon im optischen Limit, aber umso mehr mit steigendem Impulsübertrag q, wird eine Überlagerung der kollektiven Plasmonanregung mit Einteilchenanregungen im Energiebereich des Plasmons beobachtet, woraus eine Kopplung zwischen beiden Arten von Anregungen resultiert. Abgesehen vom deutlichen Einfluß der Bandstruktur auf die Plasmonendispersion läßt die überaus inhomogene Elektronenverteilung von Diamant auf nicht zuvernachlässigende Kristallokalfeldeffekte schließen. Der Vergleich zwischen experimentellen und berechneten Spektren zeigt deutlich, wie die Kristallokalfeldeffekte in der Tat mit steigendem Impulsübertrag an Gewicht zunehmen und die Struktur der Verlustfunktion mitbestimmen. / In the context of the immense potential of diamond as a material for use in the microelectronics industry, in this thesis pristine and doped diamond films have been deposited on silicon using chemical vapour deposition. Subsequently their electronic properties have been investigated using mainly electron energy-loss spectroscopy. Doping of the films with boron, lithium or phosphorous was carried out either via in-situ gas phase doping during film growth or using ion implantation. Upon ion implantation an increase of the carbon content with sp2 hybridisation has generally been found due to ion beam induced damage. In the case of boron doping it was possible to significantly reduce this sp2-contribution using a high temperature anneal. For the in-situ doping with boron, upon increasing doping concentration a decrease of the sp2-contribution was found. For the sample with the highest boron content the boron 1s absorption edge could also be investigated, providing evidence for the preferential incorporation of the boron atoms into tetrahedrally co-ordinated sites. This boron incorporation leads to the existence of electronic excitations in the energy range of the band gap, which could be observed using both infrared and electron energy-loss spectroscopy. From the electron energy-loss measurements it was possible to calculate acceptor concentrations which were consistent with the large amount of tetrahedrally co-ordinated boron atoms. A second theme in this thesis involved the study of pristine and nitrogen doped diamond-like amorphous carbon films, which are an interesting material class with far-reaching technological potential. Here the focus of the research concerned the dependency of the electronic and optical properties of the films upon the ion energy and the nitrogen partial pressure applied during the film preparation. The plasmon energies, mass densities, sp3 contribution and the optical band gaps of the samples were determined quantitatively, whereby the maximum in all these quantities was found to occur for ion energies of 100 eV. Furthermore, all of these characteristics were found to decrease continually with increasing nitrogen content. A Kramers-Kronig analysis of the loss spectra enabled the derivation of the real and imaginary parts of the dielectric function and with this of the complete spectrum of single particle excitations. The hybridization between the carbon and nitrogen atoms was also studied in detail from the analysis of the respective 1s absorption edges. Furthermore this thesis deals with the investigation of diamond as a model system for solids with pure covalent bonds. In particular, the loss function of diamond was measured along different high symmetry directions over a wide range of energy and momentum. Firstly, the EELS measurements showed directly the strongly anisotropic nature of the plasmon dispersion in diamond. Secondly, by the comparison of the experimental spectra with ab initio LDA-based calculations that include crystal local field effects as well as exchange and correlation contributions, conclusions can be drawn as to the influence of these quantities. In the optical limit, but even more so with increasing momentum transfer q, a superposition of the collective plasmon excitation and the single particle excitations in the energy range of the plasmon is observed. This energetic proximity results in a coupling between both types of excitations. Apart from the distinct influence of the bandstructure on the plasmon dispersion, the considerably inhomogeneous electron distribution of diamond would lead one to expect significant crystal local field effects in this system. The comparison between the experimental and the calculated spectra shows explicitly that the crystal local field effects increase with increasing momentum transfer and play an important role in defining the structure of the loss function.