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No description available.

The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation but pose additional problems because such materials are often porous and contain significant amounts of carbon. Therefore barrier metal diffusion into the dielectric and the formation of interfacial carbides and oxides are of significant concern. The objective of the present research is to investigate the fundamental surface interactions between diffusion barriers and various low-k dielectric materials. Two major diffusion barriers¾ tatalum (Ta) and titanium nitride (TiN) are prepared by DC magnetron sputtering and metal-organic chemical vapor deposition (MOCVD), respectively. Surface analytical techniques, such as X-ray photoelectronic spectroscopy (XPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM) are employed. Ta sputter-deposited onto a Si-O-C low dielectric constant substrate forms a reaction layer composed of Ta oxide and TaC. The composition of the reaction layer varies with deposition rate (1 Å-min-1 vs. 2 Å-sec-1), but in both cases, the thickness of the TaC layer is found to be at least 30 Å on the basis of XPS spectra, which is corroborated with cross-sectional TEM data. Sputter-deposited Cu will not wet the TaC layer and displays facile agglomeration, even at 400 K. Deposition for longer time at 2 Å-sec-1 results in formation of a metallic Ta layer. Sputter deposited Cu wets (grows conformally) on the metallic Ta surface at 300 K, and resists significant agglomeration at up to ~ 600 K. Cu diffusion into the substrate is not observed up to 800 K in the UHV environment. Tetrakis(diethylamido) titanium (TDEAT) interactions with SiO2, Cu and a variety of low-k samples in the presence (~ 10-7 Torr or co-adsorbed) and absence of NH3 result in different products. TDEAT interactions with SiO2 are dominated by Ti interactions with substrate oxygen sites, and that Ti oxide/sub-oxide bond formation can proceed with relatively low activation energy. No Ti carbide or Si carbide formation is observed. Co-adsorption of TDEAT and NH3 on SiO2 at 120K followed by annealing to higher temperature results in enhanced Ti-N bond formation, which is stable against oxidation up to 900K in UHV. Similarly, continuous exposures of TDEAT on SiO2 at 500K in the presence of NH3 exhibit a relatively enhanced Ti-N spectral component. Co-adsorption of NH3 and TDEAT on Cu (poly) surface at 120K, followed by annealing to 500K, results in complete desorption of Ti, N or C-containing species from the Cu substrate. Reaction of TDEAT with a Cu surface at 500K yields a Ti-alkyl species via a b-hydride elimination pathway. TDEAT/Cu interactions are not observably affected by overpressures of NH3 of 10-7 Torr. TDEAT interaction with a porous carbon doped oxide low-k substrate at 700K demonstrates undissociated or partly dissociated Ti-NR species trapped in the dielectrics matrix due to its high porosity. In addition, carbide formation is observed from C(1s) XPS spectra. For a hydrocarbon low-k film, the majority sites (carbon) are highly unreactive towards TDEAT even at higher temperature due to a lack of functional groups to initiate the TDEAT/low-k surface chemistry.

Les matériaux diélectriques sont présents dans de nombreux dispositifs en microélectronique. Ces derniers peuvent être soumis à de fortes contraintes électriques impactant leur durée de vie. Le stress électrique peut en effet provoquer le claquage du diélectrique ou la modification des performances des composants par accumulation de charges. Dans ces travaux de thèse, différentes méthodes de caractérisation et d'analyse physique ont été utilisées pour étudier la structure des échantillons et identifier les mécanismes en jeu dans le processus d'accumulation de charges dans des couches minces de nitrure de silicium. Puis un code de simulation modélisant les phénomènes de transport de charges dans les isolants a été développé. Le modèle prend en compte des phénomènes de transport par effet tunnel et par effet thermique, dans le volume du diélectrique et aux interfaces isolant-métal. Il permet d'étudier l'évolution de grandeurs physiques (courants, charge, champ électrique) en fonction du temps et de la profondeur dans la couche mince diélectrique. Des résultats de mesures sur des composants capacitifs ont pu être reproduits grâce aux simulations. Cet outil permet d'estimer l'intérêt d'un matériau diélectrique relativement à la fiabilité de composants capacitifs. Il peut également être utilisé en amont afin de définir un matériau aux propriétés idéales pour l'application visée ou aider au dimensionnement de dispositifs en microélectronique. / Dielectric materials can be found in numerous devices in microelectronics. They can be subjected to significant electrical stress, which impacts their lifetime. Indeed, this electrical stress can lead to dielectric breakdown or modify the component performances by charge storage. In this work, several characterization methods and physical analysis have been used in order to study the samples and identify mechanisms involved in charge transport in silicon nitride thin films. Then a simulation code has been developed to model charge transport phenomena in insulators. This model takes into account tunnel and thermal effects in the dielectric and at the dielectric-metal interfaces. The temporal and spatial evolution of physical quantities (currents, charge, electric field) in the dielectric film are calculated. Measurement results on capacitive components can be obtained thanks to simulations. This simulation tool allows testing dielectric materials according to capacitive component reliability. It may be used to define optimal properties for materials depending on applications or to assist in device design in microelectronics.

This report is introduced with a presentation of fundamental electromagnetic theories, which have helped a lot in the achievement of methods for calculation and design of microstrip transmission lines and circulators. The used software for the work is also based on these theories. General considerations when designing microstrip solutions, such as different types of transmission lines and circulators, are then presented. Especially the design steps for microstrip lines, which have been used in this project, are described. Discontinuities, like bends of microstrip lines, are treated and simulated. There are also sections about power handling capability of microstrip transmission lines and different substrate materials. In the result part there are computed and simulated dimensions of the microstrip transmission lines used in the prototype system. Simulations of conceivable loads in the cavity illustrate quantitatively the reflection coefficient. Even practical measurements are made in a network analyzer and are presentedin this part. Suitable materials and dimensions for the final microwave feed transmission line system for high powers are then presented. Since circulators are included in the system a basic introduction to the design of these in stripline and microstrip techniques is also made. At last conclusions, examinations of the designed system and comparisons to the today’s systems are made.

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<p>This report is introduced with a presentation of fundamental electromagnetic theories, which have helped a lot in the achievement of methods for calculation and design of microstrip transmission lines and circulators. The used software for the work is also based on these theories. </p><p>General considerations when designing microstrip solutions, such as different types of transmission lines and circulators, are then presented. Especially the design steps for microstrip lines, which have been used in this project, are described. Discontinuities, like bends of microstrip lines, are treated and simulated. There are also sections about power handling capability of microstrip transmission lines and different substrate materials. </p><p>In the result part there are computed and simulated dimensions of the microstrip transmission lines used in the prototype system. Simulations of conceivable loads in the cavity illustrate quantitatively the reflection coefficient. Even practical measurements are made in a network analyzer and are presentedin this part. </p><p>Suitable materials and dimensions for the final microwave feed transmission line system for high powers are then presented. Since circulators are included in the system a basic introduction to the design of these in stripline and microstrip techniques is also made. </p><p>At last conclusions, examinations of the designed system and comparisons to the today’s systems are made.</p>

19 Dec 2004. / Published through the Information Bridge: DOE Scientific and Technical Information. "IS-T 2082" Henry Hao-Chuan Kang. 12/19/2004. Report is also available in paper and microfiche from NTIS.

Le développement d'applications sans fil conduit à une demande croissante de composants électroniques à large bande. Les inductances et les transformateurs sont des éléments clés pour les étapes de gestion d'énergie et de la communication. La connaissance du comportement électrique des matériaux magnétiques est essentiel, surtout lorsque les applications à large bande sont concernés. L'objectif de cette thèse est de développer des techniques pour la caractérisation des matériaux déposé par procédé jet d'encre. The development of wireless applications leads to an increasing demand of electronic broadband components. Inductances and transformers are key components for power management and communication stages. The knowledge of the electric behaviour of the magnetic materials is critical especially when broadband applications are concerned. The objective of this thesis is to develop techniques to characterizing materials deposed by inkjet process. / The development of wireless applications leads to an increasing demand of electronic broadband components. Inductances and transformers are key components for power management and communication stages. The knowledge of the electric behaviour of the magnetic materials is critical especially when broadband applications are concerned. The objective of this thesis is to develop techniques to characterizing materials deposed by inkjet process.

Made available in DSpace on 2014-10-09T12:34:59Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:04:28Z (GMT). No. of bitstreams: 0 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Neste trabalho foi utilizado o método de regressão do diâmetro para a medida do limiar de ablação nos materiais Suprasil, BK7, Safira e Ti:Safira por pulsos de femtossegundos. Através de medidas dos limiares de ablação para pulsos únicos e pulsos sobrepostos, quantificou-se o parâmetro de incubação para cada dielétrico. Essas medidas preliminares serviram para validação do método denominado Diagonal Scan ou D-scan. Para tanto, o método D-scan teve seu formalismo expandido o que possibilitou a quantificação da sobreposição de pulsos durante o seu uso. A simplicidade e rapidez do método D-scan permitiram que o limiar de ablação no BK7 fosse medido para diferentes larguras temporais e sobreposições. O limiar de ablação para pulsos únicos em função da largura temporal dos pulsos foi comparado com uma simulação teórica. A partir do conhecimento do parâmetro de incubação desenvolveu-se uma metodologia de usinagem em dielétricos que considera a sobreposição de pulsos durante a ablação. Isso permitiu a fabricação de microcanais para uso em microfluídica em BK7. / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP / FAPESP:08/00284-0