Le micro-usinage de matériaux transparents est aujourd’hui un sujet d’intérêt mondial en recherche appliquée. L’emploi de lasers femtoseconde permet la micro-fabrication de composants optiques et de verres intelligents, ou la réalisation de cellules photovoltaïques. Dans ce contexte, cette thèse expérimentale se concentre sur l’absorption laser résolue en temps et en espace à la surface de matériaux diélectriques irradiés (silice fondue et saphir). Des impulsions femtoseconde (30 − 450 fs) dans l’infrarouge sont utilisées pour étudier l’efficacité de couplage de l’énergie laser pour l’ablation de matériaux dans un régime d’intensité intermédiaire (1-100 TW/cm²) lors de deux expériences. Un schéma pompe-sonde détermine la dynamique du plasma électrontrou à l’échelle femtoseconde et une expérience de déplétion laser mesure l’énergie absorbée. Une étude morphologique du matériau est réalisée, évaluant les seuils d’endommagement et d’ablation ainsi que les morphologies d’ablation. Nous établissons ensuite un bilan d’énergie de l’absorption laser responsable de l’enlèvement de matière. Les densités d’énergie typiques atteintes sont évaluées expérimentalement et confrontées à une modélisation avec propagation. Un excès de dépôt d’énergie par rapport à l’énergie de liaison du matériau au repos est mis en évidence, suggérant qu’un important chauffage du gaz d’électrons libres a lieu. Nous réalisons enfin une interprétation des données avec un regard technologique. Des guides à la réalisation de microsystèmes en régime d’ablation laser femtoseconde sont proposés, et démontrent l’intérêt d’impulsions sous 100 fs pour un procédé photonique. / This thesis concerns femtosecond laser absorption in dielectrics in the context of micromachining processes of glass materials. Prospected applications of this technology are optical component micro-fabrication, smart glass manufacturing, or photovoltaic cell patterning. In this context, we focus on the characterization in time and space of the absorption mechanisms occurring at the surface of irradiated dielectric materials (fused silica and sapphire). Using near-IR ultrashort pulses (30 − 450 fs) laser energy coupling efficiency for material ablation is studied at mid-intensities (1-100 TW/cm²) through two experiments. A pump-probe scheme determines the electron-hole plasma dynamics at femtosecond timescale and a laser depletion experiment measures the material absorption. A morphological study of the samples is performed, evaluating the damage and ablation thresholds as well as ablation morphologies. We then establish an energy balance of laser absorption responsible of matter removal. Typical energy densities reached are estimated through experiments and confronted to a propagative model. It is shown that the amount of absorbed energy is far above the bonding energy of the material at rest, suggesting that the major part of the absorbed energy is spent to heat the free electron gas. Finally, we propose a technological analysis of the experimental data. The interest of sub-100 fs laser pulses for photonic processes is evidenced, however at the cost of additional complexity. It provides guidelines for efficient direct laser ablation, making the results relevant for femtosecond processes.

An expression for the dielectric susceptibility tensor of a cubic ionic crystal has been derived using the classical Liouville operator. The effect of cubic anharmonic forces is included as a perturbation on the harmonic crystal solution, and a series expansion for the dielectric susceptibility is developed. The most important terms in the series are identified and summed, yielding an expression for the complex susceptibility with an anharmonic contribution which is linearly dependent on temperature. A numerical example shows that both the real and imaginary parts of the susceptibility are continuous, finite functions of frequency.

This thesis is about measuring charger and discharger properties of dielectrics materials in time domain and transformation of acquired characteristics to the frequency domain. For transformation between time and frequency domain are used Fourier transform and Haman approximation. The result is frequency dependent on loss number. Part of this work is about comparison of these methods in theoretical and practical applications on the basis of accuracy, speed and performance.

There is an increasing interest in using new composite materials in microwave devices, to reduce size and weight while maintaining similar performances. A new promising material group is named magneto-dielectric materials, which have the permittivity and permeability values both larger than one. Compared to the commercially used dielectric materials, magneto-dielectric materials can achieve a larger miniaturization factor with the equivalent properties as dielectric materials. There is a very limited availability of commercial magneto-dielectric materials. A recent addition was from Rogers Corporation with MAGTREX 555, [1], that is available as a printed circuit board laminate. The material is limited to 500 MHz operational frequency due to its increased magnetic and dielectric losses. In this thesis the purpose is to understand the loss mechanisms, characterize and understand the state-of-the-art magneto-dielectric materials at microwaves, and to produce a magneto-dielectric material in the lab to understand the material better. A new material was developed with magneto-dielectric properties. The material was based on a polymer base of polystyrene that serves as a dielectric material and doped with nickel nanoparticles that produce the magnetic properties. The contents of the nanoparticles in the mix is a design variable. Nickel-polystyrene samples with different nickel contents of 0%, 2.3% and 4.5%, were produced in the lab and measured in-house to understand the loss mechanism and RF performance.

Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. Despite this tremendous development in SiC technology, the reliability issues like device degradation or high channel mobility still remain to be solved. This thesis focuses on SiC surface passivation and termination, a topic which is very important for the utilisation of the full potential of this semiconductor. Three dielectrics with high dielectric constants, Al2O3, AlN and TiO2, were deposited on SiC with different techniques. The structural and electrical properties of the dielectrics were measured and the best insulating layers were then deposited on fully processed and well characterised 1.2 kV 4H SiC PiN diodes. For the best Al2O3 layers, the leakage current was reduced to half its value and the breakdown voltage was extended by 0.5 kV, reaching 1.6 kV, compared to non passivated devices. As important as the proper choice of dielectric material is a proper surface preparation prior to deposition of the insulator. In the thesis two surface treatments were tested, a standard HF termination used in silicon technology and an exposure to UV light from a mercury lamp. The second technique is highly interesting since a substantial improvement was observed when UV light was used prior to the dielectric deposition. Moreover, UV light stabilized the surface and reduced the leakage current by a factor of 100 for SiC devices after 10 Mrad γ ray exposition. The experiments indicate also that the measured leakage currents of the order of pA are dominated by surface leakage. / QC 20110114

The scaling of semiconductor transistors has led to a decrease in thickness of the silicon dioxide layer used as gate dielectric. The thickness of the silicon dioxide layer is reduced to increase the gate capacitance, thus increasing the drain current. If the thickness of the gate dielectric decreases below 2nm, the leakage current due to the tunneling increases drastically. Hence it is necessary to replace the gate dielectric, silicon dioxide, with a physically thicker oxide layer of high-k materials like Hafnium oxide and Titanium oxide. High-k dielectric materials allow the capacitance to increase without a huge leakage current. Hafnium oxide and Titanium oxide films are deposited by reactive magnetron sputtering from Hafnium and Titanium targets respectively. These oxide layers are used to create metal-insulator-metal (MIM) structures using aluminum as the top and bottom electrodes. The films are deposited at various O2/Ar gas flow ratios, substrate temperatures, and process pressures. After attaining an exact recipe for these oxide layers that exhibit the desired parameters, MOS capacitors are fabricated with n-Si and p-Si substrates having aluminum electrodes at the top and bottom of each. Comparing the parameters of Hafnium oxide- and Titanium oxide- based MOS capacitors, MOSFET devices are designed with Hafnium oxide as gate dielectric.

No / A heterogeneous hybrid computational electromagnetics method is presented, which enables different parts of an antenna simulation problem to be treated by different methods, thus enabling the most appropriate method to be used for each part. The method uses a standard frequency-domain moment-method program and a finite-difference time-domain program to compute the fields in two regions. The two regions are interfaced by surfaces on which effective sources are defined by application of the Equivalence Principle. An extension to this permits conduction currents to cross the boundary between the different computational domains. Several validation cases are examined and the results compared with available data. The method is particularly suitable for simulation of the behavior of an antenna that is partially buried, or closely coupled with lossy dielectric volumes such as soil, building structures or the human body.

No description available.

Nesse trabalho são discutidos os resultados a respeito de materiais híbridos baseados na poliimida, PI, obtida por reações de policondensação entre a diamina 4,4\'-Oxidianilina (ODA) e o dianidrido 4,4\'-Oxidiftálico (ODPA), seguida de imidização térmica. O estudo foca na influência do tempo de tratamento (1, 15 e 60 min) e na temperatura de decomposição térmica (500°C) sobre as propriedades da PI. Os experimentos foram realizados sob fluxo de Argônio e os materiais obtidos apresentam características intermediárias entre PI e materiais carbonáceos. Dados de Nanoindentação (NI) revelaram aumento de até 50% de dureza para os filmes tratados por 60 min. ODPA e ODA serviu ainda de base para a preparação do revestimento híbrido contendo ORMOSIL gerado in situ por catálise ácida via processo sol-gel a partir do (3-aminopropil)trietóxissilano (APTES) e Tetraetil Ortossilicato (TEOS). O revestimento obtido é homogêneo e tem boa interação com o substrato (aço inoxidável 316L). A polarização potenciodinâmica revelou uma proteção elevada tanto em solução de NaCl 3,5% em massa quanto em H2SO4 0,5 mol L-1, em relação ao aço sem revestimento, com densidade de corrente da ordem de 10-9 A cm-2, na faixa de -700 a 500 mV vs Ag/AgCl. Por fim, filmes híbridos baseados em ODPA, ODA, APTES e TEOS, adicionados de Ácido Fosfotungstico (HPW) foram preparados e avaliados por Espectroscopia na região do Infravermelho com Transformada de Fourier e Ressonância Magnética Nuclear de Silício e Fósforo (29Si e 31P MAS NMR) que confirmaram a formação da PI e da rede ORMOSIL, bem como revelam que a estrutura do HPW permaneceu intacta após o processo de síntese. Mapeamentos realizados por Micro-fluorescência de Raios X assistida por Luz Síncrotron (μ-XRF) mostram uma boa dispersão da fase inorgânica (ORMOSIL e HPW) na orgânica (POO), e todos os materiais são termicamente estáveis até aproximadamente 500°C, de acordo com as curvas obtidas por Termogravimetria (TGA). Outras técnicas de caracterização também foram usadas para uma investigação mais detalhada dos materiais. / In this thesis are presented the results and considerations related to several hybrid materials derived from the polyimide, PI, obtained by polycondensation reactions between 4,4\'-Oxydianiline (ODA) and 4,4\'-Oxydiphthalic (ODA), followed by thermal imidization. The study focuses on the effect of thermal treatment time (1, 15 and 60 min) and the temperature of beginning of thermal decomposition (773 K) on the properties of PI. The experiments were performed under Argon flow, and the materials presented intermingled properties of PI and carbonaceous materials. The hardness, evaluated by Nanoindentation (NI), reached an increase of 50% for POO films treated for 60 min. POO was also used for the preparation of the hybrid coating containing ORMOSIL obtained in situ by acid catalysis via sol-gel process from (3-aminopropyl)triethoxysilane (APTES) and Tetraethyl Orthosilicate (TEOS). The coating is homogeneous and present a good interaction with the substrate (316L stainless steel). Data of potendynamic polarization revealed a high protection both under NaCl 3.5 wt% and H2SO4 0.5 mol L-1 solutions related to the neat substrate, with current density of order 10-9 A cm-2, in range potential of -700 to 500 mV vs Ag/AgCl. Finally, hybrid films were prepared based on ODPA, ODA, APTES and TEOS, in addition to Phosphotungstic Acid (HPW). The characteristics of all materials were evaluated by Fourier Transform Infrared Spectroscopy in Middle and Near Infrared region (FTMIR and FTNIR), and Magic Angle Spinning-Nuclear Magnetic Resonance of Silicon 29 and Phosphorus 31 (29Si and 31P MAS NMR) which confirmed the ORMOSIL network formation, as well as revealed that the HPW structure remained intact after the synthesis process. Mapping performed by Assisted Synchrotron Light X-ray Micro Fluorescence (μ-XRF) the good dispersion of the inorganic phase (ORMOSIL and HPW) in the organic phase (POO). All materials are thermally stable up to 773 K, according to Thermogravimetric Analysis (TGA). Other techniques of characterization were also used to further investigation of the materials.

Le sujet de cette thèse porte sur la compréhension et la modélisation du comportement électrique de système d'isolation soumis à un fort champ électrique continu. Les propriétés électriques du polymère sont directement pilotées par ses hétérogénéités chimiques et physiques présentes à plusieurs échelles. Dans cette étude, un nouveau modèle est développé ayant pour but de simuler l'évolution de la microstructure de polymère avec la température, le champ électrique et le temps et de simuler l'impact de cette évolution sur les propriétés électriques du polymère. Dans ce modèle, des matrices sont utilisées pour décrire la distribution de chacune des hétérogénéités et propriété électriques d'un polymère semi-cristallin. L'évolution de ces matrices de microstructure suit des lois génétiques dont la définition a été obtenue à partir d'une caractérisation fine des propriétés physicochimiques et électriques de matériaux spécifiques en fonction de la température et du champ électrique. Ces lois implémentées sont basés sur des calculs simples permettant un temps de résolution plus rapide comparativement aux autres modèles préexistants. Basée sur ces lois d'évolutions génétiques, le comportement électrique sous champ électrique continue de polymère isolant peut être simulé uniquement à partir d'une caractérisation physique et chimique de ce polymère. Le modèle est ainsi capable de reproduire le comportement électrique de plusieurs polymères semi-cristallins et de suivre les données expérimentales mesurées par ailleurs. Le modèle intègre plusieurs physiques tels que la diffusion, le transport ionique et le transport électronique, lui permettant ainsi de prendre en compte l'influence d'un grand nombre d'hétérogénéités. / This thesis presents a research work on understanding and modeling the electrical behavior of insulation system in cables subjected to high DC constraints. Electrical properties of polymeric insulation are directly related to their chemical and physical heterogeneities present at several scales. In this work, a new model is developed to simulate the modification over time of the microstructure in insulation polymers under electric field and temperature as well as the subsequent impacts on electrical properties. In this model, matrices are used to describe the distribution of each heterogeneity and electrical property in semi-crystalline polymer. When stressed under electric field and at temperature, matrices of microstructure evolve from implemented genetic laws. This simulated microstructure evolution yields to the simulation of electrical property changes over time at transient and steady state. To define these genetic laws, a detailed characterization of the physical, chemical and electrical properties of specific materials as a function of temperature and electric field is experimentally performed. Genetic laws are notably implemented to take into account the impact of the semi-crystalline structure and the presence of chemical residues in polymer electrical properties. Based on these genetic evolution laws, this modeling approach allows simulating DC electrical behavior of polymers only from their physical and chemical characterizations and reproduce accurately experimental electrical behavior with a faster solving time compared to other simulation methods.