Global ETD Search

1	Theoretical and Experimental Studies of Optical Properties of BAlN and BGaN Alloys AlQatari, Feras S. 21 April 2019 (has links) Wurtzite III-nitride semiconductor materials have many technically important applications in optical and electronic devices. As GaN-based visible light-emitting diodes (LEDs) and lasers starts to mature, interest in developing UV devices starts to rise. The search for materials with larger bandgaps and high refractive index contrast in the UV range has inspired multiple studies of BN-based materials and their alloys with traditional III-nitrides. Additionally, alloying III-nitrides with boron can reduce their lattice parameters giving a new option for strain engineering and lattice matching. In this work I investigate the refractive indices of BAlN and BGaN over the entire compositional range using hybrid density functional theory (DFT). An interesting non-linear trend of the refractive index curves appears as boron content is increased in the BAlN and BGaN alloys. The results of this calculation were interpolated and plotted in three dimensions for better visualization. This interpolation gives a 3D dataset that can be used in designing a myriad of devices at all binary and ternary alloy compositions in the BAlGaN system. The interpolated surface was used to find an optimum design for a strain-free, high reflection coefficient and high bandwidth DBR. The performance of this DBR was quantitatively evaluated using finite element simulations. I found that the maximum DBR reflectivity with widest bandwidth for our materials occurs at a lattice parameter of 3.113 Å using the generated 3D dataset. I use the corresponding material pair to simulate a DBR at the wavelength 375 nm in the UVA range. A design with 25 pairs was found to have a peak reflectivity of 99.8%. This design has a predicted bandwidth of 26 nm measured at 90% peak performance. The high reflectivity and wide bandwidth of this lattice-matched design are optimal for UVA VCSEL applications. I have assisted in exploring different metalorganic chemical vapor deposition (MOCVD) techniques, continuous growth and pulsed-flow modulation, to grow and characterize BAlN alloys. Samples grown using continuous flow show better optical quality and are characterized using spectroscopic ellipsometry. The refractive index of samples obtained experimentally is significantly below the predicted value using DFT. BAlN BGaN DFT Ellipsometry Distributed Bragg Reflectors Refractive Indices
2	Design and Fabrication ofHighly Reflective DBRs for use with Long Wavelength VCSELs Mehdi, Shahideh 07 1900 (has links) This project successfully designed, fabricated and characterized two highly reflective distributed Bragg reflectors for use with long wavelength vertical cavity surface emitting lasers. The first reflector consisted of 20 pairs of alternating lnP/Ino.64Gao.36Aso.777Po.223 layers grown on an InP substrate with a theoretically predicted normal incident reflectivity of 96.6% at a center wavelength of 1550nm. The second DBR had 20 pairs of alternating GaAs/Ino.484Gao.5i6P layers grown on a GaAs substrate with a theoretically predicted reflectivity of 94.9% at a center wavelength of 1550nm for normal incident light. Experimental results obtained using a specially designed reflectivity measurement setup confirmed reflectivity models and predictions at both normal and variable incident light angles. However, these measurements revealed a discrepancy between theoretical and experimental layer thickness values for both DBR structures. Applying perturbations to the theoretical models, the actual layer thicknesses ofthe DBRs were determined. X-ray analysis was employed to examine the periodicity of the super-lattices along with the accuracy of lattice matching to the substrate. Transmission electron microscopy revealed that no detectable drift in layer thickness was apparent during growth of the DBR structures. Photoluminescence was used to investigate any compositional variations ofthe quaternary layers in the first DBR stack. / Thesis / Master of Applied Science (MASc) distributed Bragg reflectors
3	ITO distributed Bragg reflectors for resonant cavity OLED Chuang, Tung-Lin 28 June 2012 (has links) In the study, conductive distributed Bragg reflectors (DBRs) fabricated at room temperature based on porous indium tin oxide (ITO) on dense ITO bilayers were proposed for resonant cavity organic light emitting diodes (RCOLEDs). In the fabrication of the ITO DBRs, the low refractive index porous ITO films were obtained by applying supercritical CO2 treatment at different temperature and pressures on the spin-coated sol-gel ITO films. On the other hand, the high refractive index ITO films were grown at room temperature by long-throw reactive ratio-frequency magnetron sputtering. The refractive index of the porous ITO film and ITO films were 1.54 and 2.0, respectively. For the DBR with 4 pairs ITO bilayers, the optical reflectance of more than 70 % was achieved. The stop band and the average resistivity is 140 nm and 2.2¡Ñ10-3 £[-cm, respectively. Finally, electrical and optical characteristics of the RCOLEDs fabricated on the ITO DBR were investigated and compared with those of the conventional OLEDs. The maximum luminous efficiency of 3.79 cd/A was obtained at 347 mA/cm2 for the RCOLED. This luminous efficiency was 26 % higher than that of the conventional OLED. resonant cavity organic light emitting diodes Indium tin oxide porous supercritical CO2 distributed Bragg reflectors
4	Design and Fabrication of Highly Reflective DBRs for use with Long Wavelength VCSELs Shahideh, Mehdi 07 1900 (has links) This project successfully designed, fabricated and characterized two highly reflective distributed Bragg reflectors for use with long wavelength vertical cavity surface emitting lasers. The first reflector consisted of 20 pairs of alternating lnP/Ino.64Gao.36Aso.777Po.223 layers grown on an InP substrate with a theoretically predicted normal incident reflectivity of 96.6% at a center wavelength of 1550nm. The second DBR had 20 pairs of alternating GaAs/Ino.484Gao.5i6P layers grown on a GaAs substrate with a theoretically predicted reflectivity of 94.9% at a center wavelength of 1550nm for normal incident light. Experimental results obtained using a specially designed reflectivity measurement setup confirmed reflectivity models and predictions at both normal and variable incident light angles. However, these measurements revealed a discrepancy between theoretical and experimental layer thickness values for both DBR structures. Applying perturbations to the theoretical models, the actual layer thicknesses of the DBRs were determined. X-ray analysis was employed to examine the periodicity of the super-lattices along with the accuracy of lattice matching to the substrate. Transmission electron microscopy revealed that no detectable drift in layer thickness was apparent during growth of the DBR structures. Photoluminescence was used to investigate any compositional variations of the quaternary layers in the first DBR stack. / Thesis / Master of Applied Science (MASc)
5	In0.53Ga0.47As-In0.52Al0.48As multiple quantum well THz photoconductive switches and In0.53Ga0.47As-AlAs asymmetric spacer layer tunnel (ASPAT) diodes for THz electronics Wang, Yuekun January 2017 (has links) This thesis is concerned with terahertz (THz) technology from both optical and electronic approaches. On the optical front, the investigation of optimised photoconductive switches included the characterisation, fabrication and testing of devices which can generate and detect THz radiation over the frequency range from DC to ~ 2.5 THz. These devices incorporated semiconductor photoconductors grown under low temperature (LT) Molecular Beam Epitaxy (MBE) conditions and using distributed Bragg reflectors (DBRs). The material properties were studied via numerous characterisation techniques which included Hall Effect and mid infrared reflections. Antenna structures were fabricated on the surface of the active layers and pulsed/continuous wave (CW) signal absorbed by these structures (under bias) generates photocurrent. With the help of the DBRs at certain wavelengths (800 nm and 1550 nm), the absorption coefficient at the corresponding illumination wavelength increased thus leading to significant increase of the THz output power while the materials kept the desirable photoconductive material properties such as high dark resistivity and high electron mobility. The inclusion of DBRs resulted in more than doubling of the THz peak signals across the entire operating frequency range and significant improvements in the relative THz power. For the THz electronic approach, a new type of InP-based Asymmetric Spacer Tunnel Diode (ASPAT), which can be used for high frequency detector, was studied. The asymmetric DC characteristics for this novel tunnel diode showed direct compatibility with high frequency zero-bias detector applications. The devices also showed an extreme thermal stability (less than 7.8% current change from 77 K to 400 K) as the main carrier transport mechanism of the ASPAT was tunnelling. Physical models for this ASPAT diode were developed for both DC (direct current) and AC (alternating current) simulations using the TCAD software tool SILVACO. The simulated DC results showed almost perfect matches with measurements across the entire temperature range from 77 K to 400 K. From RF (radio frequency) measurements, the intrinsic diode parameters were extracted and compared with measured data. The simulated zero biased detector circuits operating at 100 GHz and 240 GHz using the new InGaAs-AlAs ASPAT diode (4*4 micrometer square) showed comparable voltage sensitivities to state of the art Schottky barrier diodes (SBDs) detectors but with the added advantage of excellent thermal stability.
6	Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes Ni, Xianfeng 06 August 2010 (has links) General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighting almost everywhere. But their lighting efficiency is very limited: only 20-30 lm/W for incandescent lighting bulb, approximately 100 lm/W for fluorescent lighting. State-of-the-art InGaN LEDs with a luminous efficacy of over 200 lm/W at room temperature have been reported. However, the goal of replacing the incandescent and fluorescent lights with InGaN LEDs is still elusive since their lighting efficiency decreases substantially when the injection current increases beyond certain values (typically 10-50 Acm-2). In order to improve the electroluminescence (EL) performance at high currents for InGaN LEDs, two approaches have been undertaken in this thesis. First, we explored the preparation and characterization of non-polar and semi-polar GaN substrates (including a-plane, m-plane and semi-polar planes). These substrates serve as promising alternatives to the commonly used c-plane, with the benefit of a reduced polarization-induced electric field and therefore higher quantum efficiency. It is demonstrated that LEDs on m-plane GaN substrates have inherently higher EL quantum efficiency and better efficiency retention ability at high injection currents than their c-plane counterparts. Secondly, from a device structure level, we explored the possible origins of the EL efficiency degradation at high currents in InGaN LEDs and investigated the effect of hot electrons on EL of LEDs by varying the barrier height of electron blocking layer. A first-order theoretical model is proposed to explain the effect of electron overflow caused by hot electron transport across the LED active region on LED EL performance. The calculation results are in agreement with experimental observations. Furthermore, a novel structure called a “staircase electron injector” (SEI) is demonstrated to effectively thermalize hot electrons, thereby reducing the reduction of EL efficiency due to electron overflow. The SEI features several InyGa1-yN layers, with their In fraction (y) increasing in a stepwise manner, starting with a low value at the first step near the junction with n-GaN. GaN InGaN light emitting diodes efficiency electroluminescence electron overflow non-polar MOCVD photoluminescence m-plane a-plane c-plane carrier spillover efficiency droop epitaxial growth lateral overgrowth LEDs current crowding internal quantum efficiency external quantum efficiency Hot electron silicon distributed Bragg reflectors nitrides xrd sem electron blocking layer junction heating semi-polar nonpolar Auger recombination Electrical and Computer Engineering Engineering
7	Growth and investigation of AlN/GaN and (Al,In)N/GaN based Bragg reflectors Ive, Tommy 06 January 2006 (has links) Die Synthese von AlN/GaN- und (Al,In)N/GaN-Braggreflektoren wird untersucht. Die Strukturen wurden mittels plasmaunterstützter Molekularstrahlepitaxie auf 6H-SiC(0001)-Substraten abgeschieden. Ferner wurde der Einfluß der Si-Dotierung auf die Oberflächenmorphologie sowie die strukturellen und elektrischen Eigenschaften der AlN/GaN-Braggreflektoren untersucht. Es wurden rißfreie Braggreflektoren mit einer hohen Reflektivität (R>99%) und einem bei 450 nm zentrierten Stopband erhalten. Die Si-dotierten Strukturen weisen eine ohmsche I-V-Charakteristik im gesamten Meßbereich sowie einen spezifischen Widerstand von 2-4 mOhmcm2 auf. Die Ergebnisse der (Al,In)N-Wachstumsversuche wurden in einem Phasendiagramm zusammengefaßt, welches den optimalen Parameterraum für (Al,In)N klar aufzeigt. / We study the synthesis of AlN/GaN and (Al,In)N/GaN Bragg reflectors. The structures were grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates. In addition, we study the impact of Si-doping on the surface morphology and the structural and electrical properties of the AlN/GaN Bragg reflectors. Crack-free and high-reflectance (R>99%) Bragg reflectors were achieved with a stopband centered at 450 nm. The Si-doped structures exhibit ohmic I-V behavior in the entire measurement range. The specific series resistance is 2-4 mOhmcm2. The results of the (Al,In)N growth experiments are summarized in a phase diagram which clearly shows the optimum growth window for (Al,In)N. Molekularstrahlepitaxie Ga)N-Heterostrukturen GaN-Oberflächenemitter (Al Braggreflektoren In)N-Heterostrukturen plasmaunterstützte MBE Si-Dotierung molecular beam epitaxy Ga)N heterostructures GaN surface emitting structures (Al distributed Bragg reflectors In)N heterostructures plasma-assisted MBE Si doping 530 Physik 29 Physik, Astronomie ddc:530

1

Page generated in 0.0852 seconds