Dans ce mémoire sont abordées quelques études sur la dynamique hors-équilibre des surfaces cristallines. L'accent est porté sur le démouillage de films minces monocristallins et sur les instabilités morphologiques induites par électromigration. Sur le plan instrumental, la Microscopie à Electrons Lents et la Diffusion Centrale des Rayons X en Incidence Rasante nous ont permis d'accéder à la dynamique des phénomènes in situ et en temps réel. Nous montrons que le démouillage à l'état solide des films minces de Silicium et de Germanium sur Silice conduit à des instabilités dendritiques du front de démouillage pilotées par le gain d'énergie de surface/interface et cinétiquement contrôlées par la diffusion de surface des adatomes. Le rôle central du facettage sur les instabilités morphologiques du front de démouillage est étudié en détails, en particulier certaines orientations cristallines limitent la vitesse de recul du front de démouillage et favorisent le développement de fronts droits stables. Les instabilités morphologiques induites par électromigration sur les faces vicinales de Silicium sont un moyen d'étudier les interactions élastiques entre marches atomiques. Nous montrons que ces interactions favorisent le développement successif d'une onde de densité de marches puis d'un facettage périodique de la surface aux temps longs. Enfin est abordée l'étude de la croissance auto-organisée de nanostructures de Pd sur une surface oxydée de Ni3Al et nous terminons par quelques perspectives concernant l'étude de la dynamique de la ligne triple solide-solide-vapeur ainsi que sur la technique de Microscopie à Electrons Lents.

The aim of the study presented in this thesis is to explore the electrical and physical properties of films of tin and lead clusters. Understanding the novel conductance properties of cluster films and related phenomenon such as coalescence is important to fabricate any cluster based devices. Coalescence is an important phenomenon in metallic cluster films. Due to coalescence the morphology of the films changes with time which changes their properties and could lead to failure in cluster devices. Coalescence is studied in Sn and Pb cluster films deposited on Si$_3$N$_4$ surfaces using Ultra High Vacuum (UHV) cluster deposition system. The conductance of the overall film is linked to the conductance of the individual necks between clusters by simulations. It is observed that the coalescence process in Sn and Pb films follows a power law in time with an exponent smaller than reported in literature. These results are substantiated by the results from previous experimental and Kinetic Monte Carlo (KMC) simulation studies at UC. Percolating films of Sn show unique conductance properties. These films are characterized using various electrode configurations, applied voltages and temperatures. The conductance measurements are performed by depositing clusters on prefabricated gold electrodes on top of Si$_3$N$_4$ substrates. Sn cluster films exhibit a variety of conductance behaviours during and after the end of deposition. It is observed that the evolution of conductance during the onsets at percolation threshold is dependent on the film morphology. Samples showing difference responses in onset also behave differently after the end of deposition. Therefore all samples were categorized according to their onset behaviour. After the end of deposition, when a bias voltage is applied, the conductance of Sn films steps up and down between various well-defined conductance levels. It is also observed that in many cases the conductance levels between which these devices jump are close to integral multiples of the conductance quantum. There are many possible explanations for the steps in conductance. One of the explanations is formation and breaking of conducting paths in the cluster films by electric field induced evaporation and electromigration respectively. The stepping behaviour is similar to that in non-volatile memory devices and hence very interesting to explore due to potential applications.

Les travaux de cette thèse consistent à étudier le phénomène de rectification optique au sein de dispositifs plasmo-électroniques. L’adressage optique de ces composants, de taille extrêmement réduite et présentant un temps de réponse ultra-rapide, induit une conversion du champ incident en un courant statique mesurable. L’intégration monolithique d’éléments plasmoniques et électroniques requiert une connaissance détaillée des mécanismes de transport thermique et électrique à l’échelle du nanomètre. Ces travaux visent donc également à discuter l’ensemble des effets thermiques inhérents à l’excitation optique de ces dispositifs connectés dans le but d’identifier les différentes contributions entrant en jeu dans la génération d’un courant photo-assisté. / The work described in this manuscrit consists in studying the optical rectification within plasmo-electronic devices. These ultra-compact optically adressed components with an ultra-fast time response induces a conversion of the incident field into a static current. The monolithically-integrated electronically optical antenna requires a detailed knowledge of nanoscale thermal and electrical transport mechanisms. This work also aims to discuss all thermal effects inherent in the optical excitation of these connected devices, in order to identify the different contributions in the generation of a photo-assisted current.

Depuis plus de 50 ans, l’industrie de la microélectronique ne cesse d’évoluer afin de répondre à la demande d’augmentation des performances ainsi que des fonctionnalités des composants, tout en diminuant les tailles et les prix des produits. Cela est obtenu à ce jour principalement par la réduction des dimensions des composants électroniques. Cependant les dimensions actuelles des transistors atteignent une limitation physique et de nombreux effets parasites émergent. Il devient évident que dans un avenir très proche cet axe de développement ne sera plus envisageable. L’intégration tridimensionnelle apparaît alors comme une solution très prometteuse face à cette problématique de miniaturisation. Cette architecture permet la réalisation de composants plus performants tout en augmentant les fonctionnalités de ces derniers. Son concept consiste à empiler différents circuits de natures éventuellement différentes puis de les interconnecter électriquement à l’aide de connexions verticales. Le collage direct métallique permet en ce sens d’assembler mécaniquement et électriquement deux circuits l’un sur l’autre. Le but de ce travail de thèse est d’étudier le comportement électrique du procédé de collage direct métallique avant de l’intégrer dans un composant actif. On retrouve dans la première partie de ces travaux, la description du jeu de masque ainsi que les intégrations technologiques utilisées, pour réaliser les démonstrateurs 3D permettant les différentes caractérisations électriques de ces interconnexions métalliques. L’évolution de la résistance spécifique de l’interface de collage a été investiguée en fonction de la température de recuit. Puis, la fiabilité électrique de ces interconnexions a été étudiée en analysant leurs comportements face aux risques de dégradation induits par électromigration ou sous contrainte thermique. Des études physico-chimiques ont permis d’analyser les défaillances et de proposer des mécanismes. Pour finir, dans une dernière partie, les étapes technologiques nécessaires à une intégration 3D haute densité type puce à plaque ont été développées et caractérisées. / During 50 years, semiconductor technology has been evolving in exponential rates in both productivity and performance. By following a steady technological path that consists in scaling down transistors and increasing electronic components density, the semiconductor industry was able to meet the increasing demand in high performance, low power consumption and low cost devices. However by constantly shrinking devices geometries and increasing functionalities, semiconductor industry is facing physical limitations in addition to more and more overwhelming parasitic effects. Since further miniaturisation would be made impossible in a near future, 3D integration appears as a promising approach to go beyond planar integration possibilities. This approach allows high performances and various functionalities compounds achievements. 3D integration consists on various chips stacking with vertical and electrical interconnects. The metallic direct bonding offers strong mechanical bond with a good electrical conductivity between the two bonded circuits. In this work, electrical behaviours of bonded devices achieved by direct bonding are studied. First, the various structures layout used in this study and the process flow integration for the 3D demonstrator are described. Then, electrical characterization of metallic interconnects are performed. Measurements and results are reported and discussed concerning the study of resistance evolution of the bonding interface during anneal. And the investigation of the bonded devices behaviours facing the risk of reliability issues on Cu-Cu direct bonded interconnects are achieved by addressing electromigration items and several thermal stress tests as stress voiding or thermal cycling. Finally, physical characterizations enabled failure mechanisms analysis and identification. technological steps required for a chip to wafer integration using direct bonding process has been developed and studied during this work. Results are given at the end of this report.

A l'échelle nanométrique, les solides peuvent changer de forme par diffusion de surface, et présentent alors des propriétés de mouillage qui s'apparentent à celles des liquides. Dans cette thèse, nous nous sommes plus particulièrement intéressés au comportement de mouillage des nano-solides sur des substrats nanopatternés, comportant par exemple des piliers ou des tranchées. Sur ces substrats, les nanoparticules (ou ilots) solides peuvent être multi-stables : c'est-à-dire qu'ils peuvent présenter plus d'un état localement stable. Comme les liquides, les solides ont été observés par exemple dans des états dits de Wenzel (pénétrant dans la structure du substrat) ou de Cassie-Baxter (ne pénétrant pas). Grâce à une combinaison de simulations Monte Carlo Cinétiques et de modèles analytiques, nous avons étudié la stabilité de ces états et leur dynamique de transition. Plus particulièrement, avons mis en évidence le rôle de la diffusion de surface et de la nucléation bidimensionnelle sur la dynamique de transition. Nous avons aussi montré que les contraintes élastiques augmentent la stabilité des états de Cassie-Baxter, et mènent à de nouveaux états, avec des morphologies asymétriques ou partiellement empalées dans les nanostructures. Finalement, nous avons proposé de contrôler les transitions de mouillage à l'aide de l'électromigration induite par un faisceau d'électrons. Nos résultats ouvrent la voie vers une nouvelle direction pour les investigations expérimentales / At the nanometer scale, solids can change shape thanks to surface diffusion and therefore display wetting properties that can be likened to those of liquids. This doctoral thesis intends to study particularly the wetting behaviour of nano-solids located on nanopatterned substrates, containing for instance pillars or trenches. Upon these substrates, solid nanoparticles (or islands) can be multi-stable – that is to say they can display more than one locally-stable state. Just like liquids, solids have been observed for example in the context of the so-called Wenzel state (penetrating the very structure of the substrate) and Cassie-Baster state (no penetration). By combining Kinetic Monte Carlo simulations with analytical models, we conducted a study on the stability of these states along with their dynamics of transition. In particular, we highlighted the specific roles that surface diffusion and bidimensional nucleation play in regards to the dynamics of transition. We also demonstrated that elastic constraints increase the stability of Cassie-Baxter states and lead to new states, with either asymmetric morphologies or morphologies that are partially impaled into the nanostructures. Last but not least, we proposed to control wetting transitions using the electromigration brought on by an electron beam. Our results pave the way for a new direction in the field of experimental investigations

Chiral separation systems in capillary electrophoresis are in the scope of interest of many research groups all over the world. Therefore, the need to develop reliable theoretical models, which would help to explain phenomena connected with chiral separations or optimization of separation conditions, is obvious. In this thesis several mathematical models and approaches that can fulfill these requirements are presented. First part of the thesis deals with the determination of rate constants of interconversion of enantiomers by means of dynamic capillary electrophoresis. We focused on mixtures of chiral selectors and formulated a mathematical model, which enables to determine rate constants of interconversion in such systems. Mixtures of chiral selectors are very popular in separation practice due to their enhanced enantioselectivity. The theoretical model established in the thesis is able to explain the separation mechanisms of multi-chiral selector systems and to propose and verify possible ways of their optimization. In addition, the separation mechanism in systems with simultaneous cyclodextrin and borate complexation was revealed. Finally we present the complete mathematical model of electromigration in systems with complexation agents. The model is implemented into our simulation tool Simul 5...

Interface balance laws are derived to describe transport across a phase interface. This is used to derive generalized conditions for phase nucleation and growth, valid even for solids with inhomogeneous surface stress.<div><br></div><div>An explicit interface tracking approach called Enriched Isogeometric Analysis (EIGA) is used to simulate phase evolution. Algebraic level sets are used as a measure of distance and for point projection, both necessary operations in EIGA. Algebraic level sets are observed to often fail for surfaces. Rectification measures are developed to make algebraic level sets more robust and applicable for general surfaces. The proposed methods are demonstrated on electromigration problems. The simulations are validated by modeling electromigration experiments conducted on Cu-TiN line structures.</div><div><br></div><div>To model topological changes, common in phase evolution problems, Boolean operations are performed on the algebraic level sets using R-functions. This is demonstrated on electromigration simulations on solids with multiple voids, and on a bubble coalescence problem. </div>

Capillary electrophoresis often uses complexing agents since the interaction between the analyte and the complexing agent can result in achieving or improving the separation. Examples of such methods can be electrokinetic chromatography or affinity capillary electrophoresis (ACE). ACE is used to determine the complexing parameters. In case of chiral separation, this issue gets complicated, since the parameters of the two analytes (enantiomers) are not completely independent to one another. Therefore, a procedure has been proposed in this thesis, that should always be used to evaluate the complexing parameters of two enantiomers. Statistical evaluation of these parameters was assessed as well. This work also proposes a method that allows to determine the relative migration order of two enantiomers in two different complexing separation systems. The mathematical description of electrophoresis is based on continuity equations, that are inherently nonlinear. However, these equations can be linearized to obtain an approximate analytical solution. There was recently presented a generalized model, that enables inclusion of complete complexing equilibria in the theoretical description of electromigration. Thus, various phenomena, including nonlinear ones, associated with complexation can be predicted. This...

The increasing clock speed and the further reduction of the feature size in integrated circuits lead to increasing demands on the interconnecting material. Thus an increasing need for a metallization with low electrical resistance and high electromigration endurance exist. Copper can be count as a material with these properties. Since 1998 Copper interconnections are commercially manufactured for integrated circuits. Electromigration is the most lifetime limiting factor in modern integrated circuits. The main the electromigration behavior influencing parameter and especially the influence of the microstructure is unknown. In this work the influence of the grain boundaries and their properties on the electromigration is examined at sputtered (PVD) and electroplated (ECD) Copper interconnects. For this investigation microstructure mappings produced by electron backscatter diffraction (EBSD) are correlated to in-situ electromigration experiments inside the SEM to research the electromigration behavior and the diffusion paths. Microstructure analysis shows big a difference between the two investigated types of interconnects. In both a strong &amp;lt;111&amp;gt; fibre texture is observed, but the PVD Copper shows a stronger texture than the electroplated one. The texture index of the PVD interconnects is 15,9 whereas the ECD lines show an index of 3,9. The frequency densities of the grain boundary misorientation, which is important for the electromigration behavior, are very different for both films. The ECD lines show a fraction of 55% Sigma 3 twin boundaries and 40% high angle grain boundaries. In contrast the PVD interconnects show a fraction of 5% Sigma 3 twin boundaries, 75% high angle grain boundaries and 20% small angle grain boundaries. This shows that a reduction of the high angle grain boundaries is not related to a strong &amp;lt;111&amp;gt; fibre texture. With in-situ experiments correlated to microstructure analysis it is shown, that voiding at high angle grain boundaries occur in the down wind of blocking grains or sites where only Sigma 3 twin boundaries are present. Hillocks were formed at high angle grain boundaries in the upwind of blocking grains or sites where only small angle grain boundaries or Sigma 3 twin boundaries are found. By a statistical evaluation of the in-situ experiments it is shown that more than 50% of the observed electromigration damages could be ascribed clearly to a grain boundary related local mass flux divergence. At strings of high angle grain boundaries voiding at the cathode side and hillock growth at the anode side is shown. The distance between these voids and hillocks is always higher than the Blech length. As the current density increases the distance between these voids and hillocks decreases according to Blech´s law, whereby it´s valid for local divergence is shown. FIB cuts show, that hillocks on PVD lines grow non-epitaxial in contrast to hillocks on ECD lines, which show epitaxial growth. These differences of hillock´s growth may suggest different underlying growth mechanisms. Reliability testing performed on PVD Copper interconnects lead to an activation energy for electromigration of 0,77eV ± 0,07eV. The confidence interval includes reported values for surface and also grain boundary diffusion. This indicates that the electromigration in these experiments is mainly influenced by surface and grain boundary diffusion. In this work the nucleation of voids and hillocks related to the previous analysed microstructure is observed inside the SEM and correlated to high angle grain boundaries and their misorientation angle. The result of this work show that electromigration damage in Copper interconnects is mostly caused by inhomogeneities of the microstructure. In this process the high angle grain boundaries are the main diffusion path. / Mit steigender Taktrate u. weiter fortschreitender Integrationsdichte in mikroelektr. Schaltungen nehmen d. Anforderungen an d. Metallisierungsmaterial weiter zu. Es besteht d. zunehmende Forderung nach Metallisierungen mit geringem elektrischen Widerstand u. hoher Elektromigra- tionsfestigkeit. Kupfer kann als Material angesehen werden, welches d. Anforderungen erfüllt. Seit 1998 wird Kupfer als Metallisierungsmaterial in höchstintegr. Schaltun- gen eingesetzt. Die Elektromigration (EM) ist der d. Zuver- lässigkeit am meisten begrenzende Faktor in mod. mikro- elektron. Schaltungen. Die Haupteinflußgrößen auf d. Elektromigrationsverhalten u. insbes. d. Einfluß d. Gefüges ist unklar. In d. Arbeit wird an nichtpassivier- ten physikalisch (PVD) u. galvanisch (ECD) abgeschied. Kupferleitbahnen d. Einfluß d. Korngrenzen u. deren Eigenschaften auf d. Elektromigrationsverhalten untersucht. Dazu werden Gefügeanalysen mittels Kikuchi-Rückstreutechnik u. in-situ Elektromigrationsexperimente im Rasterelektron- enmikroskop gekoppelt, um d. Elektromigrationsverhalten u. d. Migrationspfade zu erforschen. Gefügeuntersuchungen zeigen, daß d. untersuchten Leitbahnen sich in ihren Gefügeeigenschaften deutl. unterscheiden. Beide Schichten zeigen e. &amp;lt;111&amp;gt; Fasertextur, wobei d. PVD-Leitbahnen e. deutl. schärfere Textur mit e. Texturfaktor von 15,9 gegenüber den ECD-Leitbahnen d. e. Texturfaktor von 3,9 aufweisen. Die Häufigkeitsverteilungen d. Korngrenz- Misorientierung, sind für d. beiden Schichten unterschiedl. Die ECD-Leitbahnen zeigen e. Anteil von 55% Sigma 3-Korngrenzen und 40% Großwinkelkorngrenzen. Die PVD- Leitbahnen hingegen weisen nur e. Anteil von 5% Sigma 3-Korngrenzen, 75% Großwinkelkorngrenzen u. 20% Kleinwin- kelkorngrenzen auf. Dadurch wird gezeigt, daß e. scharfe &amp;lt;111&amp;gt; Textur keine Reduzierung d. Großwinkelkorngrenzen zur Folge haben muß. Anhand von in-situ Experimenten gekoppelt mit Gefügeanalysen wird gezeigt, daß Porenbildung an Groß- winkelkorngrenzen hinter blockierenden Körnern oder hinter Bereichen auftritt, in d. nur Sigma 3-Korngrenzen o. Kleinwinkelkorngrenzen vorliegen. Hügelbildung tritt an Großwinkelkorngrenzen vor blockierenden Körnern o. Berei- chen auf, in denen nur Kleinwinkelkorngrenzen o. Sigma 3-Korngrenzen vorliegen. Mit e. statist. Auswertung d. in-situ Experimente wird gezeigt, daß mehr als d. Hälfte aller Elektromigrationsschädigungen bei beiden Herstellungsmethoden eindeutig auf e. korngrenzbedingte lokale Divergenz im Massenfluß zurückzuführen sind. An Ketten von Großwinkelkorngrenzen wird verdeutl., daß kathodenseitig Porenbildung und anodenseitig Hügelbildung auftritt. Der Abstand zw. Pore u. Hügel liegt hier immer oberh. d. Blechlänge. Mit zunehmender Stromdichte nimmt d. Pore-Hügel-Abstand entspr. d. Blechtheorie ab, wodurch gezeigt wird, daß d. Blechtheorie auch bei lokalen Flußdivergenzen gilt. FIB-Querschnittsanalysen zeigen, daß Hügel auf PVD-Leitbahnen nicht epitaktisch mit d. darunterliegenden Schicht verwachsen sind im Gegensatz zu Hügeln auf ECD-Leitbahnen, die teilw. e. epitaktische Verwachsung mit d. Leitbahn zeigen. Lebensdauermessungen an PVD-Leitbahnen ergeben e. Aktivierungsenergie von 0,77eV ± 0,07eV. Es ist davon auszugehen, daß das Elektromigrationsverhalten d. hier untersuchten unpassi- vierten Leitbahnen haupts. von Korngrenz- u. von Oberfläch- endiffusion beeinflußt wird. In d. Arbeit wurde zum ersten Mal an Kupferleitbahnen d. Entstehung von eit- bahnschädigungen im Zusammenhang mit dem vorher aufgenomme- nen Gefüge im Rasterelektronenmikroskop direkt beobachtet u. mit d. Korngrenzen u. d. Korngrenzwinkeln in Zusammenhang gebracht. Die Ergebnisse d. Arbeit zeigen, daß Schädigungen durch Elektromigration in Kupferleitbahnen vorw. durch Gefügeinhomogenitäten entstehen. Bei d. Prozeß sind Großwinkelkorngrenzen d. bevorzugte Diffusionspfad.

The intrusion of chlorides and carbon dioxide into a reinforced concrete (RC) structure can initiate corrosion of the reinforcing steel, which, due to its expansive nature, can damage the structure and adversely affects its serviceability and safety. Corrosion will initiate if at the steel surface the concrete free chloride concentration exceeds a defined limit, or its pH falls below a critical level. Hence, determination of the time to reaching these critical limits is key to the assessment of RC structures durability and service life. Due to the ionic nature of the chlorides and the bicarbonate anion (HCO3-) formed by the CO2 in the multi-ionic pore solution, the transport of both species is driven by Fickian diffusion combined with electromigration and ionic activity, which can be mathematically expressed by the Nernst-Planck-Poisson (NPP) equations. For a complete representation of the phenomenon, however, the NPP equations must be supplemented by the relevant chemical equilibrium equations to ensure chemical balance among the various species within the concrete pore solution. The combination of NPP with the chemical equilibrium equations is often termed the NPP reactive transport model. In this study, such a model is developed, coded into the MATLAB platform, validated by available experimental data, and applied to analyze the time-dependent concrete carbonation and the movement of chlorides in carbonated and non-carbonated concrete. The results of these analyses can be used to predict the time to corrosion initiation. The transient one-dimensional governing equations of NPP are numerically solved using the Galerkin’s finite element formulation in space and the backward (implicit) Euler scheme in the time domain. The associated system of chemical equilibrium equations accounts for the key homogeneous and heterogeneous chemical reactions that take place in the concrete during carbonation and chlorides transport. At each stage of the analysis, the effects of these reactions on the changes in the pore solution chemical composition, pH, cement chloride binding capacity, concrete porosity, and the hydrated cement solids volumetric ratio are determined. The study demonstrates that given accurate input data, the presently developed NPP reactive transport model can accurately simulate the complex transport processes of chlorides and CO2 in concrete as a reactive porous medium, and the ensuing physical and chemical changes that occur due to the reaction of these species with the pore solution and the other cement hydration products. This conclusion is supported by the good agreement between results of the current analyses with the corresponding available experimental data from physical tests involving carbonation, and chloride diffusion in non-carbonated and carbonated concrete. / Thesis / Doctor of Philosophy (PhD)