Techn. Universiẗat, Diss., 2005--Berlin.

Techn. Hochsch., Diss., 2005--Aachen.

Zugl.: München, Techn. Univ., Diss., 2008

Techn. Universiẗat, Diss., 2002--Berlin.

Zugl.: Aachen, Techn. Hochsch., Diss., 2007.

Solar cells convert sunlight into electrical energy using the photo effect. With a mar-ket share of 60%, multicrystalline silicon (mc-Si) is the most frequently used absorber material. Standard mc-Si ingots are directionally solidified in a fused silica (SiO2) crucible, which exhibits a silicon nitride (Si3N4) inner coating. After the entire raw material has been melted, the nucleation takes place on the Si3N4 inner coating at the bottom of the crucible. This results in an inhomogeneous initial grain structure and an increased fraction of dislocation clusters in the upper part of the ingot, which decrease the quality of standard mc-Si. Therefore, the global goal is the development of a cost-effective technology that reduces the formation of clusters and enhances the quality of mc-Si ingots. One way of achieving that goal is to produce the so-called \"high performance multi crystalline silicon\" (HPM-Si). During the directional solidification silicon raw material remains unmelted at the bottom of the SiO2 crucible, whereby crystallization does start on the silicon feedstock a few millimeters above the crucible bottom. Compared to standard mc-Si, a finer grained structure with many small grains is formed, which are separated by so-called random grain boundaries. Since the movement of dislocations across this grain boundary type has rarely been observed, the risk of formation of dislocation clusters, which have a negative impact on the efficiency of solar cells, is greatly reduced for HPM-Si. However, the disadvantage of the HPM-Si compared to the mc-Si is the yield loss resulting from the unmelted raw material at the crucible bottom. Hence, the aim of the present work is to produce mc-Si with a fine-grained structure in combination with a high fraction of random grain boundaries without the disad-vantage of yield loss. In order to investigate the grain structure in dependence of the nucleation conditions G1 ingots having a mass of 14.5 kg and dimensions of 220x220x130 mm³ were directional solidified in a furnace. The analysis of the grain structure with respect to the grain size, grain orientation and the random grain boundary length fraction and the comparison with the HPM-Si reference crystal took place on horizontal wafers with a thickness of 3mm. One possibility to influence the grain structure of mc-Si could be the variation of the cooling conditions before the start of crystallization at the crucible bottom. In a first series of experiments, a gas-flowed cooling plate, positioned below the crucible, was used. An increased gas flow increases the axial heat flow downwards and the cooling rate below the crucible bottom in the same direction. The detected cooling rate, measured by a thermocouple in the silicon melt 5 mm above the crucible bottom, varied in a range between 0.06-1.5 K/min. An increased cooling rate increases the supercooling, with a maximum of 2K. The analysis of the grain structure shows that a reduction in the cooling rate in combination with the lowest supercooling minimizes the average grain size and increases the fraction of random grain boundaries. However, an HPM-Si like grain structure (grain size and fraction of random grain boundaries comparable to HPM-Si) could not completely produced. Furthermore, due to the extended process time, the wafer yield is reduced, whereby the reduction of the cooling rate is not a preferable method for the industrial process. In a second experimental series, which took place under constant cooling rates, the influence of an additional nucleation layer on the initial grain structure was investigated. For this purpose, the additional nucleation layer was applied on the already existing Si3N4 inner coating on the crucible bottom. In order to adjust a HPM-Si like grain structure, the contact angle of the silicon melt on the additional nucleation layer should be lower than on the Si3N4 inner coating. The theoretical basis for this hypothesis is the relationship between the contact angle and the nucleation energy, which states that a reduced contact angle lowers the nucleation energy and can ultimately lead to more nuclei. Furthermore, in order to avoid melting, the additional nucleation layer must have a higher melting point than silicon. Suitable materials for the application as a foreign seed sample are SiC, SiO2 and Al2O3, which are used in the form of particles with different sizes. The production of the additional nucleation layer was carried out by a spraying as well as by an embedding procedure. These layers exhibit different thermal conductivity as well as surface roughness. Embedded nucleation layers generate higher roughness values than sprayed nucleation layers. The analysis of the grain structure identified the surface roughness as the main influencing factor on the initial grain size. While an increased surface roughness (Rq>100μm) results in a fine-grained structure (average grain size: <2mm²) comparable to HPM-Si, the average grain size increases (>2 mm²) with a reduced surface roughness (Rq<100μm). However, the analysis of the grain boundary relationship shows that the fraction of random grain boundaries does not correlate with the average grain size. Only a ma-terial dependency was detected. All SiO2 nucleation layers generate an increased fraction of random grain boundaries, comparable to the HPM-Si material. In contrast, the fraction of random grain boundaries was reduced for all SiC nucleation layers. This result is probably established with the different thermal conductivities of the used materials. The increased thermal conductivity of the sample with the SiC nucleation layers increases the cooling rate, promoting dendritic growth. In contrast the lower thermal conductivity of the SiO2 nucleation layers reduces the cooling rate and dendritic growth is suppressed. Since dendrites exhibit a Σ3 grain boundary relationship in the center, the fraction of this grain boundary type increases for SiC nucleation layers and the fraction of random grain boundaries decreases. In this thesis, various possibilities for influencing the grain structure have been pre-sented. A SiO2 nucleation layer with a roughness value Rq> 200μm represents an industrially relevant solution for the production of mc-Si with comparable properties to the HPM-Si without the disadvantages of yield loss. Hence, it was possible to in-crease the yield with comparable material quality, whereby the production costs could be reduced. Some first crucible manufacturers have already transferred the use of the SiO2 nucleation layers on top of the already existing Si3N4 inner coating at the crucible bottom to production.

Solar cells convert sunlight into electrical energy using the photo effect. With a mar-ket share of 60%, multicrystalline silicon (mc-Si) is the most frequently used absorber material. Standard mc-Si ingots are directionally solidified in a fused silica (SiO2) crucible, which exhibits a silicon nitride (Si3N4) inner coating. After the entire raw material has been melted, the nucleation takes place on the Si3N4 inner coating at the bottom of the crucible. This results in an inhomogeneous initial grain structure and an increased fraction of dislocation clusters in the upper part of the ingot, which decrease the quality of standard mc-Si. Therefore, the global goal is the development of a cost-effective technology that reduces the formation of clusters and enhances the quality of mc-Si ingots. One way of achieving that goal is to produce the so-called \"high performance multi crystalline silicon\" (HPM-Si). During the directional solidification silicon raw material remains unmelted at the bottom of the SiO2 crucible, whereby crystallization does start on the silicon feedstock a few millimeters above the crucible bottom. Compared to standard mc-Si, a finer grained structure with many small grains is formed, which are separated by so-called random grain boundaries. Since the movement of dislocations across this grain boundary type has rarely been observed, the risk of formation of dislocation clusters, which have a negative impact on the efficiency of solar cells, is greatly reduced for HPM-Si. However, the disadvantage of the HPM-Si compared to the mc-Si is the yield loss resulting from the unmelted raw material at the crucible bottom. Hence, the aim of the present work is to produce mc-Si with a fine-grained structure in combination with a high fraction of random grain boundaries without the disad-vantage of yield loss. In order to investigate the grain structure in dependence of the nucleation conditions G1 ingots having a mass of 14.5 kg and dimensions of 220x220x130 mm³ were directional solidified in a furnace. The analysis of the grain structure with respect to the grain size, grain orientation and the random grain boundary length fraction and the comparison with the HPM-Si reference crystal took place on horizontal wafers with a thickness of 3mm. One possibility to influence the grain structure of mc-Si could be the variation of the cooling conditions before the start of crystallization at the crucible bottom. In a first series of experiments, a gas-flowed cooling plate, positioned below the crucible, was used. An increased gas flow increases the axial heat flow downwards and the cooling rate below the crucible bottom in the same direction. The detected cooling rate, measured by a thermocouple in the silicon melt 5 mm above the crucible bottom, varied in a range between 0.06-1.5 K/min. An increased cooling rate increases the supercooling, with a maximum of 2K. The analysis of the grain structure shows that a reduction in the cooling rate in combination with the lowest supercooling minimizes the average grain size and increases the fraction of random grain boundaries. However, an HPM-Si like grain structure (grain size and fraction of random grain boundaries comparable to HPM-Si) could not completely produced. Furthermore, due to the extended process time, the wafer yield is reduced, whereby the reduction of the cooling rate is not a preferable method for the industrial process. In a second experimental series, which took place under constant cooling rates, the influence of an additional nucleation layer on the initial grain structure was investigated. For this purpose, the additional nucleation layer was applied on the already existing Si3N4 inner coating on the crucible bottom. In order to adjust a HPM-Si like grain structure, the contact angle of the silicon melt on the additional nucleation layer should be lower than on the Si3N4 inner coating. The theoretical basis for this hypothesis is the relationship between the contact angle and the nucleation energy, which states that a reduced contact angle lowers the nucleation energy and can ultimately lead to more nuclei. Furthermore, in order to avoid melting, the additional nucleation layer must have a higher melting point than silicon. Suitable materials for the application as a foreign seed sample are SiC, SiO2 and Al2O3, which are used in the form of particles with different sizes. The production of the additional nucleation layer was carried out by a spraying as well as by an embedding procedure. These layers exhibit different thermal conductivity as well as surface roughness. Embedded nucleation layers generate higher roughness values than sprayed nucleation layers. The analysis of the grain structure identified the surface roughness as the main influencing factor on the initial grain size. While an increased surface roughness (Rq>100μm) results in a fine-grained structure (average grain size: <2mm²) comparable to HPM-Si, the average grain size increases (>2 mm²) with a reduced surface roughness (Rq<100μm). However, the analysis of the grain boundary relationship shows that the fraction of random grain boundaries does not correlate with the average grain size. Only a ma-terial dependency was detected. All SiO2 nucleation layers generate an increased fraction of random grain boundaries, comparable to the HPM-Si material. In contrast, the fraction of random grain boundaries was reduced for all SiC nucleation layers. This result is probably established with the different thermal conductivities of the used materials. The increased thermal conductivity of the sample with the SiC nucleation layers increases the cooling rate, promoting dendritic growth. In contrast the lower thermal conductivity of the SiO2 nucleation layers reduces the cooling rate and dendritic growth is suppressed. Since dendrites exhibit a Σ3 grain boundary relationship in the center, the fraction of this grain boundary type increases for SiC nucleation layers and the fraction of random grain boundaries decreases. In this thesis, various possibilities for influencing the grain structure have been pre-sented. A SiO2 nucleation layer with a roughness value Rq> 200μm represents an industrially relevant solution for the production of mc-Si with comparable properties to the HPM-Si without the disadvantages of yield loss. Hence, it was possible to in-crease the yield with comparable material quality, whereby the production costs could be reduced. Some first crucible manufacturers have already transferred the use of the SiO2 nucleation layers on top of the already existing Si3N4 inner coating at the crucible bottom to production.

Die Arbeit befasst sich mit der Ausscheidungshärtung und deren Einfluss auf mechanische und elektrische Eigenschaften von Kupfer-Titan-Legierungen mit Legierungsgehalten unter 1 Ma.-% Titan. Ein besonderer Fokus lag dabei auf der Optimierung der erzielbaren elektrischen Leitfähigkeit bei gleichzeitig hoher Festigkeit. Die zentralen Inhalte der Untersuchungen waren: • Der Einfluss des Titangehalts, der Temperatur und Dauer der Wärmebehandlung auf die aus der Ausscheidungshärtung resultierenden mechanischen und elektrischen Eigenschaftsänderungen wurde anhand von Legierungen mit 0,2 Ma.-% bis 1 Ma.-% Titan untersucht. • Der Einfluss einer erhöhten Versetzungsdichte auf die Ausscheidungshärtung und die daraus resultierenden Eigenschaften wurde anhand von unterschiedlich stark kaltumgeformten und ausscheidungsgehärteten Proben ermittelt. • Die Untersuchung des Optimierungspotentials der elektrischen Leitfähigkeit durch den Einsatz von geringen Mengen von Aluminium, Nickel, Silizium, Zink und Zinn. • Die Bestimmung des Einflusses einer Kombination von vorgelagerter Kaltumformung und Einsatz eines dritten Legierungselements auf die aus der Ausscheidungshärtung resultierenden mechanischen und elektrischen Eigenschaften. In der vorliegenden Arbeit wurde erstmals nach dem derzeit bekannten Stand der Technik und der Literatur umfassend die Ausscheidungshärtung von Kupfer-Titan-Legierungen mit weniger als 1 Ma.-% Titan untersucht. Bisherige Untersuchungen beschäftigten sich mit dem Bereich von 1,5 Ma.-% bis 6 Ma.-% Titan und in der industriellen Anwendung kommt bisher nur eine Legierung mit 3 Ma.-% Titan zum Einsatz. Aufgrund der guten, durch Ausscheidungshärtung erreichbaren, mechanischen Eigenschaften werden Kupfer-Titan-Legierungen in binärer Form oder als Mehrstofflegierungen mit Titan als Hauptlegierungselement als Substitutionswerkstoffe für Kupfer-Beryllium-Legierungen angesehen. So kommen diese vermehrt bei Steckverbindern im Automobilbau oder als Werkstoff für den Batteriekontakt oder die Kamera in Smartphones zum Einsatz. Jedoch weisen Kupfer-Titan-Legierungen eine deutlich geringere elektrischen Leitfähigkeit als Kupfer-Beryllium-Legierungen auf. Der Ansatz für die im Rahmen dieser Arbeit durchgeführten Untersuchungen ist, dass durch den Einsatz geringerer Titan-Gehalte in Kombination mit geeigneter Wärmebehandlung und Optimierung durch vorgelagerte Kaltumformung und den Einsatz weiterer Legierungselemente eine möglichst hohe elektrische Leitfähigkeit bei Erhalt guter mechanischer Eigenschaften erreichbar wird. Die experimentellen Untersuchungen von Kupfer-Titan-Legierungen mit bis zu 1 Ma.-% Titan und deren Wärmebehandlungen zur Erzielung verschiedener Auslagerungszustände zeigen, dass vor allem Legierungen mit 0,8 Ma.-% bis 1 Ma.-% Titan ein großes Potential hinsichtlich einer Ausscheidungshärtung aufweisen. Bei diesen lassen sich durch die Ausscheidungshärtung gute mechanische Eigenschaften und eine gute elektrische Leitfähigkeit einstellen. Eine deutliche Steigerung dieser Werkstoffkennwerte ist vor allem durch eine vorgelagerte Kaltumformung zu erzielen. Die Verwendung geringer Anteile an Silizium und Zink führten zu einer Beschleunigung der Ausscheidungshärtung bei einem ähnlichen Eigenschaftsprofil. Durch den Einsatz einer vorgelagerten Kaltumformung bei den Legierungen mit geringen Zusätzen von dritten Elementen zeigte sich noch eine erheblich schnellere Aushärtung bei Erzielung guter Ergebnisse für die Härte, Zugfestigkeit und elektrische Leitfähigkeit. Vor allem die schnelle Aushärtung liefert eine gute Grundlage für eine wirtschaftliche und energieeffiziente Herstellung dieser Legierungen in einer industriellen Anwendung.

Geophysical methods are essential for exploration and monitoring of subsurface formations, e.g. in carbon dioxide sequestration or enhanced geothermal energy. One of the keys to their successful application is the knowledge of how the measured physical quantities are related to the desired reservoir parameters. The work presented in this thesis shows that the presence of carbon dioxide (CO2) in pore space gives rise to multiple processes all of which contribute to the electrical rock conductivity variation. Basically, three mechanisms take place: (1) CO2 partially replaces the pore water, which is equivalent to a decrease in water saturation. (2) CO2 chemically interacts with the pore water by dissolution and dissociation. These processes change both the chemical composition and the pH of the pore filling fluid. (3) The low-pH environment can give rise to mineral dissolution and/or precipitation processes and changes the properties of the grain-water interface. Investigations on the pore water phase show that the reactive nature of CO2 in all physical states significantly acts on the electrical conductivity of saline pore waters. The physico-chemical interaction appears in different manifestations depending mainly on the pore water composition (salinity, ion types) but also on both temperature and pressure. The complex behaviour includes a low- and a high-salinity regime originating from the conductivity increasing effect of CO2 dissociation, which is opposed by the conductivity decreasing effect of reduced ion activity caused by the enhanced mutual impediment of all solutes. These results are fundamental since the properties of the water phase significantly act on all conduction mechanisms in porous media. In order to predict the variation of pore water conductivity, both a semi-analytical formulation and an empirical relationship for correcting the pore water conductivity, which depends on salinity, pressure and temperature, are derived. The central part of the laboratory experiments covers the spectral complex conductivity of water-bearing sand during exposure to and flow-through by CO2 at pressures up to 30MPa and temperatures up to 80°C. It is shown that the impact of CO2 on the real part of conductivity of a clean quartz sand is dominated by the low- and high-salinity regime of the pore water. The obtained data further show that chemical interaction causes a reduction of interface conductivity, which could be related to the low pH in the acidic environment. This effect is described by a correction term, which is a constant value as a first approximation. When the impact of CO2 is taken into account, a correct reconstruction of fluid saturation from electrical measurements is possible. In addition, changes of the inner surface area, which are related to mineral dissolution or precipitation processes, can be quantified. Both the knowledge gained from the laboratory experiments and a new workflow for the description and incorporation of geological geometry models enable realistic finite element simulations. Those were conducted for three different electromagnetic methods applied in the geological scenario of a fictitious carbon dioxide sequestration site. The results show that electromagnetic methods can play an important role in monitoring CO2 sequestration. Compared to other geophysical methods, electromagnetic techniques are generally very sensitive to pore fluids. The proper configuration of sources and receivers for a suitable electromagnetic method that generates the appropriate current systems is essential. Its reactive nature causes CO2 to interact with a water-bearing porous rock in a much more complex manner than non-reactive gases. Without knowledge of the specific interactions between CO2 and rock, a determination of saturation and, consequently, a successful monitoring are possible only to a limited extend. The presented work provides fundamental laboratory investigations for the understanding of the electrical properties of rocks when the reactive gas CO2 enters the rock-water system. All laboratory results are put in the context of potential monitoring applications. The transfer from petrophysical investigations to the planning of an operational monitoring design by means of close-to-reality 3D FE simulations is accomplished.

Geophysical methods are essential for exploration and monitoring of subsurface formations, e.g. in carbon dioxide sequestration or enhanced geothermal energy. One of the keys to their successful application is the knowledge of how the measured physical quantities are related to the desired reservoir parameters. The work presented in this thesis shows that the presence of carbon dioxide (CO2) in pore space gives rise to multiple processes all of which contribute to the electrical rock conductivity variation. Basically, three mechanisms take place: (1) CO2 partially replaces the pore water, which is equivalent to a decrease in water saturation. (2) CO2 chemically interacts with the pore water by dissolution and dissociation. These processes change both the chemical composition and the pH of the pore filling fluid. (3) The low-pH environment can give rise to mineral dissolution and/or precipitation processes and changes the properties of the grain-water interface. Investigations on the pore water phase show that the reactive nature of CO2 in all physical states significantly acts on the electrical conductivity of saline pore waters. The physico-chemical interaction appears in different manifestations depending mainly on the pore water composition (salinity, ion types) but also on both temperature and pressure. The complex behaviour includes a low- and a high-salinity regime originating from the conductivity increasing effect of CO2 dissociation, which is opposed by the conductivity decreasing effect of reduced ion activity caused by the enhanced mutual impediment of all solutes. These results are fundamental since the properties of the water phase significantly act on all conduction mechanisms in porous media. In order to predict the variation of pore water conductivity, both a semi-analytical formulation and an empirical relationship for correcting the pore water conductivity, which depends on salinity, pressure and temperature, are derived. The central part of the laboratory experiments covers the spectral complex conductivity of water-bearing sand during exposure to and flow-through by CO2 at pressures up to 30MPa and temperatures up to 80°C. It is shown that the impact of CO2 on the real part of conductivity of a clean quartz sand is dominated by the low- and high-salinity regime of the pore water. The obtained data further show that chemical interaction causes a reduction of interface conductivity, which could be related to the low pH in the acidic environment. This effect is described by a correction term, which is a constant value as a first approximation. When the impact of CO2 is taken into account, a correct reconstruction of fluid saturation from electrical measurements is possible. In addition, changes of the inner surface area, which are related to mineral dissolution or precipitation processes, can be quantified. Both the knowledge gained from the laboratory experiments and a new workflow for the description and incorporation of geological geometry models enable realistic finite element simulations. Those were conducted for three different electromagnetic methods applied in the geological scenario of a fictitious carbon dioxide sequestration site. The results show that electromagnetic methods can play an important role in monitoring CO2 sequestration. Compared to other geophysical methods, electromagnetic techniques are generally very sensitive to pore fluids. The proper configuration of sources and receivers for a suitable electromagnetic method that generates the appropriate current systems is essential. Its reactive nature causes CO2 to interact with a water-bearing porous rock in a much more complex manner than non-reactive gases. Without knowledge of the specific interactions between CO2 and rock, a determination of saturation and, consequently, a successful monitoring are possible only to a limited extend. The presented work provides fundamental laboratory investigations for the understanding of the electrical properties of rocks when the reactive gas CO2 enters the rock-water system. All laboratory results are put in the context of potential monitoring applications. The transfer from petrophysical investigations to the planning of an operational monitoring design by means of close-to-reality 3D FE simulations is accomplished.