Les solutions solides (1-x)Na0,5Bi0,5TiO3 (NBT) – xCaTiO3 (CT) ont été étudiées par diffraction des rayons X, spectroscopie Raman, microscopie électronique à balayage, spectroscopie d’impédance et DSC. Ce sont des matériaux présentant la structure cristalline pérovskite. L’étude révèle la complexité mais aussi la richesse des phénomènes physiques dans cette famille de composés : les séquences des transitions de phases, l’influence du dopant Ca2+ sur les propriétés physico-chimiques du matériau, la relation étroite entre propriétés diélectriques et caractéristiques structurales. Des solutions solides (1-x)NBT – xCT, avec 0 ≤ x ≤ 1,00, ont été synthétisées par voie solide classique puis frittées selon une procédure spécifique dans un milieu confiné pour éviter toute perte de sodium et de bismuth. Les caractéristiques cristallines des solides obtenus imposent clairement de distinguer trois domaines suivant les valeurs de x. En effet, pour les valeurs croissantes de x et à la température ambiante, on observe un premier domaine (Région I, pour x ≤ 0,07) dans lequel le solide obtenu est une solution solide de structure cristalline, de groupe d’espace R3c, identique à celle de NBT pur. Pour les valeurs les plus élevées de x (Région II, pour x ≥ 0,15), le solide obtenu est une solution solide de structure cristalline, de groupe d’espace Pnma, identique à celle de CT pur. Enfin, entre ces deux domaines (Région III, 0,09 ≤ x ≤ 0,13), les solides obtenus sont biphasés, R3c + Pnma, en se limitant aux appellations des groupes d’espacé des phases formées. Dans la région I, lors du chauffage, la séquence des transitions de phases R3c → P4bm → Pm3m est mise en évidence; les températures des transitions se déplacent vers les plus basses températures quand la concentration en Ca2+ augmente. Les solides sont ferroélectriques à l’ambiante puis développent un caractère relaxeur, par coexistence de deux phases, avec l’augmentation de la température. Dans la région II, les solides révèlent un comportement relaxeur dès l’ambiante. Une transition de phase diffuse au sein de la phase orthorhombique Pnma est toutefois mise en évidence ; le solide passe d’un état relaxeur à un état paraélectrique tout en conservant, a priori, la même structure cristalline. Le phénomène de relaxation dans ces composés est expliqué par la formation de micros ou nanorégions polaires. La région III, quant à elle, est caractérisée par l’apparition d’une hystérésis thermique mise en évidence pour la première fois ; elle est expliquée par la relation entre la microstructure cristalline et les propriétés diélectriques. Enfin, l’ensemble de nos résultats a été regroupé dans un diagramme de phase original en composition et en température. / The solid solutions (1-x)Na0,5Bi0,5TiO3 (NBT) – xCaTiO3 (CT) were studied by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, impedance spectroscopy and DSC. These materials have a perovskite crystalline structure. This study reveals not only the complexity but also the richness of physical phenomena in these compounds: phases transitions sequences, the Ca2+ effect on the physical-chemistry properties and the relation between dielectric properties and crystalline structure. Thereby, (1-x)NBT – xCT solid solutions (0 ≤ x ≤ 1.00) were synthesized by chemical solid route, then they were sintered by a particular procedure in order to avoid sodium and bismuth volatilization. The solid crystalline characteristics obtained prove clearly the necessity to distinguish three fields as a function of x values. First of all, for increasing x at room temperature, there is a first region so called region I (x ≤ 0.07), wherein the crystalline structure of solid solutions obtained has a space group R3c identical to that of pure NBT. For the highest values of x, (Region II, x ≥ 0.15), the solid obtained has a space group Pnma, identical to that of pure CT. Finally, between these two regions, (0.09 ≤ x ≤ 0.13), the solid solutions obtained are biphasic, R3c + Pnma, limited to appellations of the space groups formed phases. In region I, upon heating, phase transition sequence R3c → R3c + Pnma → Pnma was determined; the corresponding transition temperatures move to low values with increasing Ca2+ concentration. These solids are ferroelectric at room temperature and then develop a relaxor character, by coexistence of two phases, with increasing temperature. In region II, these solids reveal a relaxor behavior at room temperature. However, a diffuse phase transition within the orthorhombic phase Pnma has been identified; the solid changes from relaxor to paraelectric while maintaining the same crystal structure. This phenomenon was explained by the formation of micro or nano-polar regions. Region III, demonstrated for the first time, is characterized by thermal hysteresis, and explained by the relation between crystalline microstructure and dielectric properties. Finally, all our results were assembled in an original phase diagram as a function of concentration of Ca2+ dopant and temperature.

Les matériaux composites prennent une place de plus en plus importante dans la conception et la fabrication des moyens de transport et notamment dans le domaine naval où ils sont particulièrement privilégiés. En effet, ces matériaux sont utilisés pour leur légèreté, insensibilité à la corrosion et leurs caractéristiques mécaniques. Dans le domaine militaire, où l'optimisation des moyens de communication et de protection électromagnétique est primordiale, le développement de matériaux composites dotés de propriétés de reconfigurabilité sous commande(s) externe(s), présente un atout opérationnel majeur pour les parois structurales exploitant ces matériaux. Afin d'explorer cette voie, DCNS et l'Institut d’Électronique et de Télécommunications de Rennes (IETR, UMR-6164) se sont associés. Les travaux de thèse engagés ont pour objectif d'étudier et de développer des matériaux composites présentant des fonctions de reconfigurabilité applicables aux systèmes navals tels que les radômes, les antennes et exploitables pour répondre aux problématiques de furtivité (SER). Une première étude a permis d'explorer les matériaux à base de carbone, présentant une potentielle agilité de leurs caractéristiques diélectriques sous actuateur électrique. Ces matériaux présentent également un fort pouvoir absorbant électromagnétique, tributaire des propriétés diélectriques, elles-mêmes potentiellement reconfigurables. La seconde étude engagée a étudié l'impact des matériaux ferroélectriques, c'est-à-dire des matériaux reconfigurables sous champ électrique, lorsqu'ils sont intégrés comme charge dans une résine d'imprégnation. Ce nouveau matériau composite présente alors une reconfigurabilité de ses caractéristiques diélectriques, rendant commandable en fréquence sa structure hôte. Une troisième étude, exploitant aussi le matériau ferroélectrique a permis l'obtention d'une reconfigurabilité des caractéristiques de réflectivité de panneaux composites grâce au développement de surfaces sélectives en fréquence reconfigurables. De nouvelles propriétés ont ainsi été mises en évidence en hyperfréquences. Enfin, les matériaux d'âmes et spécifiquement les nids d'abeilles diélectriques ont fait l'étude d'une fonctionnalisation pour des applications DC et hyperfréquences. / Composite materials are used for their lightness, high resistance to corrosion and high mechanical properties over large application areas, such as naval, ground and aerial. Collaboration between DCNS group and the Institute of Electronics and Telecommunications of Rennes (IETR, UMR-6164) has been initiated to develop smart composite materials with tunable properties at microwaves. Three different routes have been investigated during the thesis work. The first one is based on carbon composite material, its electromagnetic absorbing ability and its potential dielectric tunability. For this, we develop composite materials loaded with various carbon particles (carbon nanotube, graphene, black carbon). Next, to elaborate smart composite materials, a ferroelectric material has been used as filler. The dielectric characteristics of such materials can be tuned under external biasing for example. Thus we develop an active composite material under various external actuators for naval application, and especially for new reconfigurable frequency selective surface (RFSS). Finally dielectric honeycomb materials have been specifically elaborated and studied to develop smart properties for DC and microwave applications. During this work, three different prototypes improving composite materials in naval area have been performed: reconfigurable radome, RCS reduction, and antenna isolation.

The temperature and/or entropy of electrically polarisable materials can be altered by changing electric field E. Research into this electrocaloric (EC) effect has focussed on increasing the size of the EC effects, with the long-term aim of building a cooler with an EC material at its heart. Materials and experimental methods are briefly reviewed. A ‘resetting’ indirect route to isothermal entropy change ∆S for hysteretic first-order transitions is described. An indirect route to adiabatic temperature change ∆T, without the need for field-resolved heat capacity data, is also described. Three temperature controllers were built: a cryogenic probe for 77-420 K with ∼5 mK resolution, a high-temperature stage with vacuum enclosure for 295-700 K with ∼15 mK resolution, and a low-temperature stage for 120-400 K with electrical access via micropositioners. Automation enables dense datasets to be compiled. Single crystals of inorganic salts (NH4)2SO4 , KNO3 and NaNO2 were obtained. Applying 380 kV cm−1 across (NH4)2SO4 , it was found that |∆S| ∼ 20 J K−1 kg−1 and |∆T | ∼ 4 K, using the indirect method near the Curie temperature TC = 223 K. Without the ‘resetting’ indirect method, |∆S| ∼ 45 J K−1 kg−1 would have been spuriously found. Preliminary indirect measurements on KNO3 and NaNO2 give |∆S| ∼ 75 J K−1 kg−1 for ∆E ∼ 31 kV cm−1 near TC = 400 K and |∆S| ∼ 14 J K−1 kg−1 for ∆E ∼ 15 kV cm−1 near TC = 435 K, respectively. A cation-ordered PbSc0.5Ta0.5O3 ceramic showing a nominally first-order transition at 295 K was obtained. The Clausius-Clapeyron phase diagram is revealed via indirect measurements where |∆S| ∼ 3.25 J K−1 kg−1 and |∆T | ∼ 2 K, and direct measurements where |∆T | ∼ 2 K. Clamped samples show broadening of the field-induced transition. Epitaxial, ∼64 nm-thick SrTiO3 films were grown by pulsed laser deposition on NdGaO3 (001) substrates with a La0.67Sr0.33MnO3 bottom electrode. The indirect method gives |∆S| ∼ 8 J K−1 kg−1 and |∆T | ∼ 3.5 K near 180 K with |∆E| = 780 kV cm−1. Finite element modelling (FEM) was used to optimise the geometry of multilayered capacitors (MLCs) for EC cooling. Intrinsic cooling powers of 25.9 kW kg−1 are predicted for an optimised MLC based on PVDF-TrFE with Ag electrodes.

No description available.

The present research work mainly focuses on the fabrication of 0.85PMN-0.15PT thin film relaxor ferroelectrics for energy harvesting applications. Chapter 1 gives a brief review about why energy harvesting is required and the different ways it can be scavenged. An introduction to relaxor ferroelectrics and their characteristics structural features are discussed. A brief introduction is given about charge storage, electrocaloric effect , DC-EFM and integration over Si substrate is discussed. Finally, the specific objectives of the current research are outlined. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, Microstructural and physical property measurements is discussed. Chapter3 involves the optimization process carried out to contain a phase pure PMN-PT structure without any pyrochlore phase. The optimization process is an important step in the fabrication of a thin film as the quality of any device is determined by their structural and Microstructural features. XRD, SEM, AFM were used to characterize the observed phase formation in these films. The optimizing domain images of polycrystalline 0.85PMN-0.15PT thin films on La0.5Sr0.5CoO3/ (111) Pt/TiO2/SiO2/Si substrates deposited at different oxygen partial pressures are presented. The oxygen pressure has a drastic influence on the film growth and grain morphology which are revealed through XRD and SEM characterization techniques. The presence of oxygen vacancies have found to influence the distribution of polar nanoregions and their dynamics which are visualized using domain images acquired by DC-EFM In Chapter 7 the piezoelectric response of 0.85PMN-0.15PT thin films are studied due to the electric field induced bias. From this the d33 value is calculated. d33 value is an important parameter which determines whether a material is suitable for device application (PZT). But, for a device fabrication it is important to integrate them with Si wafer which is not a straightforward work .Hence, buffer layers are used to obtain a pure perovskite PMN-PT film. We have deposited 0.85PMN-0.15PT thin films of 500 nm on a SOI wafer and tried to investigate their piezoelectric application. Chapter 8 summarizes the present study and discusses about the future work that could give more insight into the understanding of the0.85PMN-0.15 PT relaxor ferroelectric thin film.

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy-efficiency and allow flexibility for finer grain logic and memory. This paper will describe the basics of ferroelectric devices for both hysteretic (non-volatile memory) and negative capacitance (steep slope switch) devices, and then project how these can be used in low-power logic cell architectures and fine-grain logic-in-memory (LiM) circuits.

Ferroelectricity is a material property were a remanent polarization exists under zero electrical field that can be reversed by applying an electrical field [1]. As consequence, two nonvolatile states exist that can be switched by an electrical field. This feature makes ferroelectrics ideally suited for nonvolatile memories with low write energy. Therefore, already in the 1950s first attempts have been made to realize ferroelectric nonvolatile memories based on ferroelectric barium titanate (BTO) crystals having evaporated electrodes on both sides [2]. The success of this approach was hindered by disturb issues that could be solved in the early 1990s by adding a transistor device as a selector [3]. Such a memory is referred to as a ferroelectric random access memory (FeRAM). Since reading of the ferroelectric polarization from a capacitor requires switching of the ferroelectric [1], the information will be destroyed and a write back is necessary. This can be avoided if the ferroelectric is placed inside of the gate stack of a MOS transistor resulting in a ferroelectric field effect transistor (FeFET) [1]. Conventional ferroelectric materials like BTO or lead- zirconium titanate (PZT) cannot be placed directly on silicon since unwanted interface reactions will occur. The necessary interface layer together with the space charge region of the transistor device leads to a rather low capacitance in series with the ferroelectric dielectric and consequently results in a strong depolarization field that has destroyed the nonvolatility of the FeFET device for many years and hinters scaling as well [4]. Today FeRAM devices are established on the market [3,5], but are limited to niche application since scaling is hindered by many integration problems associated to materials like PZT.

Les mémoires non-volatiles (MNV) sont l'objet d'un effort de recherche croissant du fait de leur capacité à limiter la consommation statique, qui obère habituellement la réduction des dimensions dans la technologie CMOS. Dans ce contexte, cette thèse aborde plus spécifiquement deux technologies de mémoires non volatiles : d'une part les jonctions tunnel ferroélectriques (JTF), dispositif non volatil émergent, et d'autre part les dispositifs à transfert de spin (TS) assisté par effet Hall de spin (EHS), approche alternative proposée récemment pour écrire les jonctions tunnel magnétiques (JTM). Mon objectif est de développer des modèles compacts pour ces deux technologies et d'explorer, par simulation, leur intégration dans les circuits non-volatiles.J'ai d'abord étudié les modèles physiques qui décrivent les comportements électriques des JTF : la résistance tunnel, la dynamique de la commutation ferroélectrique et leur comportement memristif. La précision de ces modèles physiques est validée par leur bonne adéquation avec les résultats expérimentaux. Afin de proposer un modèle compatible avec les simulateurs électriques standards, nous j'ai développé les modèles physiques mentionnés ci-dessus en langue Verilog-A, puis je les ai intégrés ensemble. Le modèle électrique que j'ai conçu peut être exploité sur la plate-forme Cadence (un outil standard pour la simulation de circuit). Il reproduit fidèlement les comportements de JTF. Ensuite, en utilisant ce modèle de JTF et le design-kit CMOS de STMicroelectronics, j'ai conçu et simulé trois types de circuits: i) une mémoire vive (RAM) basée sur les JTF, ii) deux systèmes neuromorphiques basés sur les JTF, l'un qui émule la règle d'apprentissage de la plasticité synaptique basée sur le décalage temporel des impulsions neuronale (STDP), l'autre mettant en œuvre l'apprentissage supervisé de fonctions logiques, iii) un bloc logique booléen basé sur les JTF, y compris la démonstration des fonctions logiques NAND et NOR. L'influence des paramètres de la JTF sur les performances de ces circuits a été analysée par simulation. Finalement, nous avons modélisé la dynamique de renversement de l'aimantation dans les dispositifs à anisotropie perpendiculaire à transfert de spin assisté par effet Hall de spin dans un JTM à trois terminaux. Dans ce schéma, deux courants d'écriture sont appliqués pour générer l'EHS et le TS. La simulation numérique basée sur l'équation de Landau-Lifshitz-Gilbert (LLG) démontre que le délai d'incubation de TS peut être éliminé par un fort EHS, conduisant à la commutation ultra-rapide de l'aimantation, sans pour autant requérir une augmentation excessive du TS. Nous avons appliqué cette nouvelle méthode d'écriture à la conception d'une bascule magnétique et d'un additionneur 1 bit magnétique. Les performances des circuits magnétiques assistés par l'EHS ont été comparés à ceux écrits par transfert de spin, par simulation et par une analyse fondée sur le modèle théorique. / Non-volatile memory (NVM) devices have been attracting intensive research interest since they promise to solve the increasing static power issue caused by CMOS technology scaling. This thesis focuses on two fields related to NVM: the one is the ferroelectric tunnel junction (FTJ), which is a recent emerging NVM device. The other is the spin-Hall-assisted spin-transfer torque (STT), which is a recent proposed write approach for the magnetic tunnel junction (MTJ). Our objective is to develop the compact models for these two technologies and to explore their application in the non-volatile circuits through simulation.First, we investigated physical models describing the electrical behaviors of the FTJ such as tunneling resistance, dynamic ferroelectric switching and memristive response. The accuracy of these physical models is validated by a good agreement with experimental results. In order to develop an electrical model available for the circuit simulation, we programmed the aforementioned physical models with Verilog-A language and integrated them together. The developed electrical model can run on Cadence platform (a standard circuit simulation tool) and faithfully reproduce the behaviors of the FTJ.Then, using the developed FTJ model and STMicroelectronics CMOS design kit, we designed and simulated three types of circuits: i) FTJ-based random access memory (FTRAM), ii) two FTJ-based neuromorphic systems, one of which emulates spike-timing dependent plasticity (STDP) learning rule, the other implements supervised learning of logic functions, iii) FTJ-based Boolean logic block, by which NAND and NOR logic are demonstrated. The influences of the FTJ parameters on the performance of these circuits were analyzed based on simulation results.Finally, we focused on the reversal of the perpendicular magnetization driven by spin-Hall-assisted STT in a three-terminal MTJ. In this scheme, two write currents are applied to generate spin-Hall effect (SHE) and STT. Numerical simulation based on Landau-Lifshitz-Gilbert (LLG) equation demonstrates that the incubation delay of the STT can be eliminated by the strong SHE, resulting in ultrafast magnetization switching without the need to strengthen the STT. We applied this novel write approach to the design of the magnetic flip-flop and full-adder. Performance comparison between the spin-Hall-assisted and the conventional STT magnetic circuits were discussed based on simulation results and theoretical models.

Polarization entangled photon pairs on demand are considered to be an important building block of quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a certain spatial symmetry, can be used as a triggered, on-chip source of polarization entangled photon pairs. Due to limitations of the growth, the as-grown QDs usually do not exhibit the required symmetry, making the availability of post-growth tuning techniques essential. In this work first the QD-morphology of hundreds of QDs is correlated with the optical emission of neutral excitons confined in GaAs/AlGaAs QDs. It is presented how elastic anisotropic stress can be used to partially restore the symmetry of self-assembled GaAs/AlGaAs and InGaAs/GaAs QDs, making them as candidate sources of entangled photon pairs. As a consequence of the tuning of the QD-anisotropy we observe a rotation of the polarization of the emitted light. The joint modification of polarization orientation and QD anisotropy can be described by an anticrossing of the so-called bright excitonic states. Furthermore, it is demonstrated that anisotropic stress can be used to tune the purity of the hole states of the QDs by modifying the degree of heavy and light hole mixing. This ability might be interesting for applications using the hole spin as a so-called quantum bit.

Thin-film organic field effect transistors (OFETs) have attracted growing interest in recent years due to their promising electrical, optical and mechanical properties. Especially, oligothiophenes and their derivates are candidates with good prospects for application as the organic semiconducting material in such devices. They possess an extended, polarisable aromatic π-electron system that promotes a high structural arrangement of the molecules. The charge transport in the organic film is realised in the direction perpendicular to the plane of the thiophene rings via a hopping transport mechanism. Thus, a good π-π-overlap and a consequent stacking of the thiophene molecules in the film perpendicular to the gate substrate is essential to achieve excellent electric properties such as high charge carrier mobilities and low resistive losses. The highly polarisable thiophene-based molecules are also very attractive materials that are potentially applicable as the field-sensitive organic semiconducting component of a ferroelectric OFET device. In such a device, the dielectric gate element of a conventional OFET setup is substituted by a ferroelectric substrate. The electric field that is induced by the polarisation of the ferroelectric material serves as gate field and controlls the charge injection and charge density inside the device. In this thesis, thiophene-based molecules are investigated in detail with respect to their application as field-sensitive organic semiconducting component in a ferroelectric OFET device employing quantum-chemical ab initio and DFT-based methods. We demonstrate that the phosphonic acids can bind the organic molecules to the dielectric or ferroelectric material and well-anchored, robust self-assembled monolayers are formed. Furthermore, special focus is put on the influence of the intermolecular interactions among the organic molecules on the technologically relevant structural and electronic properties. It is found that the CN···HC hydrogen bond link the molecules into extended ribbons, but the π-π-stacking-stacking interaction is the main driving force in the self-assembly of the molecules. We also establish in detail the influence of the electric field on the phosphonic acid anchoring molecule and some quarterthiophene derivates. For the latter, the strongest field-sensitivity is obtained for an external electric field aligned parallel to the extension of the thiophene framework. Hence, they are suitable to act as the field-sensitive organic components in devices that take advantage of a band-gap engineering. Moreover, the present results emphasise the importance of the adsorption morphology of the molecules in the film in a π-stacked fashion with their longitudinal axis oriented parallel to the (orthonormal) electric field induced by the ferroelectric substrate.