Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / The proposal of this project is analyze and compare different behaviors of natural floating wood floors, submitted an impact noise with several compositions, used in construction industry. The tests were done on the Thermo-acoustic Laboratory of UFSM, in according with the methods specified in the regulations ISO 140/ VI and ISO 717-2. The tests were done, using layers of wood, in different compositions and resilient materials. The results were analyzed, confronting the material with same characteristics but with different composition. The resilient materials used in the tests were: glass wool, polyethylene and polystyrene. The analysis of the results was done grouping the similar materials with different compositions. / Esta pesquisa faz uma análise e comparação de diferentes sistemas de pisos flutuantes de madeira natural submetidos a ruído de impacto, em diferentes composições utilizadas na indústria da construção civil. Os ensaios foram realizados nas câmaras para medir ruído de impacto do Laboratório de Termoacústica da UFSM, conforme metodologias especificadas nas Normas Internacionais ISO 140/ VI e ISO 717-2. Foram ensaiadas amostras de revestimento do tipo tábua corrida e taco, ambos de madeira natural, em diferentes composições quanto ao revestimento e o material resiliente. Os materiais resilientes utilizados nas composições foram lã de vidro, polietileno expandido e poliestireno expandido (isopor). A análise dos resultados obtidos foi feita agrupando-se materiais semelhantes nas diferentes composições.

Nesta dissertação é apresentado o estudo dos transistores de porta flutuante (Floating Gate Transistor - FG Transistor), sua modelagem, e a análise do efeito da dose de ionização total (Total Ionizing Dose- TID) sobre os transistores FG. Para isto foi procurado e implementado um modelo de simulação elétrica do transistor FG em condições de leitura (análise DC), baseado no cálculo quantitativo da tensão na porta flutuante em função das tensões nos terminais do transistor, no valor de carga armazenado na porta flutuante e nos coeficientes de acoplamento capacitivo que apresentam este tipo de dispositivos. Para a análise do efeito TID, a tensão limiar do transistor MOS foi variada usando o método de simulação Monte Carlo, tendo em conta as variações da tensão limiar que apresentam os transistores FG submetidos na radiação ionizante. O estudo obteve como resultado a confirmação da perda de carga do FG à medida que é incrementada a dose de radiação, o que implica uma alteração na característica de retenção de carga que caracteriza as células de memórias não voláteis (Non Volatile Memory - NVM). / In this dissertation work, a study of the the floating gate Transistor (FG transistor) performed. The focus in the electrical modeling, and the analysis of the impact of the Total Ionizing Dose (TID) on the electrical performance of the device. Aiming electrical level simulation, different electric simulation models for the FG transistor in read conditions (DC analysis) were evaluated and the model best suited for implementation into the simulation tool was selected. The selected model is based on Floating Gate voltage calculation as a function of polarization voltage of the FG transistor terminals, the stored charge value in the Floating Gate and the capacitive coupling coefficient presented by this device. For the TID analysis the threshold voltage of the MOS transistor was shifted by means of a Monte Carlo simulation method, considering the threshold voltage variations when the FG transistor is subjected to the ionizing radiation.The analysis lead to the confirmation that the loss charge stored in the FG increases with the radiation dose, affecting the retention characteristics of the memory cells.

abstract: In this work, the hydrodynamics of Suction Stabilization is studied. Suction stabilization was found to stabilize floating platforms/floats in a much better way as compared to the conventional methods. This was achieved by an effective increment in the metacentric height due to the Inverse Slack Tank (IST) effect. The study involves the analysis of the existing designs and optimizing its performance. This research investigates the stability of such floats and the hydrodynamic forces acting on the same for offshore applications, such as wind turbines. A simple mathematical model for the condition of parametric resonance is developed and the results are verified, both analytically and experimentally. / Dissertation/Thesis / Real time working of SSF in heavy wind and rain conditions / Animation explaining working of SSF / Experiment with patio umbrella mounted on SSF / Masters Thesis Mechanical Engineering 2014

Having gained popularity in the last decade, the dielectric barrier discharge (DBD) has been studied in numerous ways as a device for air acceleration. A major interest of all these works has been concentrated on achieving higher efficiency and producing higher jet velocities. These studies considered alternative geometries, different voltage waveforms etc., yet none of these studies tackle the inherently inefficient process of force creation and actuation in a DBD. Air acceleration has been attributed to the electric force that switches direction on each voltage half cycle (that is due to the nature of the discharge mechanism) yet has a forward resulting force. The present thesis considers the phenomenon of memory charge accumulation on the dielectric surface and reasons that the backward force in the second half cycle can be reversed by further migration of the memory charges to an added exposed anode. Hence a novel 3-electrode configuration is presented. Flow velocity investigations showed a 27% improvement in efficiency in comparison with the traditional 2-electrode actuator. This meant a 0.4m/s gain along the velocity profile. During the investigation process, a new discharge mechanism was encountered. This was characterized by the double discharge lines along the exposed electrode edges while in the presence of a \"floating\" encapsulated electrode. / Tendo ganho popularidade na última década, a descarga de barreira dielétrica (DBD) foi estudada de várias maneiras como um dispositivo para aceleração do ar e controle aerodinâmico. Um grande interesse de todos esses trabalhos foi concentrado em alcançar maior eficiência e produzir maiores velocidades de jato. Alguns desses estudos consideraram geometrias alternativas, diferentes formas de onda de tensão, etc., mas nenhum desses estudos aborda o processo inerentemente ineficiente de criação e atuação da força em um DBD. A Aceleração do ar tem sido atribuída à força elétrica que muda de direção em cada meio ciclo (que é devido à natureza do mecanismo de descarga), mas que tem uma força resultante para a frente. A presente tese considera o fenômeno de acumulação de carga de memória na superfície dielétrica e raciocina que a força contraria no segundo meio ciclo da descarga pode ser revertida por migração dessas cargas de memória para um ânodo adicional exposto. Assim, uma nova configuração de 3 eletrodos é apresentada. Investigações de velocidade do fluxo mostraram uma melhoria de 27% na eficiência em comparação com o tradicional atuador de 2 eletrodos. Isso significou um ganho de 0,3 m/s ao longo do perfil de velocidade. Durante o processo de investigação, foi encontrado um novo mecanismo de descarga. Isso foi caracterizado por uma dupla descarga ao longo das bordas do eletrodos expostos, enquanto na presença de um eletrodo encapsulado \"pendurado\".

Nesta dissertação é apresentado o estudo dos transistores de porta flutuante (Floating Gate Transistor - FG Transistor), sua modelagem, e a análise do efeito da dose de ionização total (Total Ionizing Dose- TID) sobre os transistores FG. Para isto foi procurado e implementado um modelo de simulação elétrica do transistor FG em condições de leitura (análise DC), baseado no cálculo quantitativo da tensão na porta flutuante em função das tensões nos terminais do transistor, no valor de carga armazenado na porta flutuante e nos coeficientes de acoplamento capacitivo que apresentam este tipo de dispositivos. Para a análise do efeito TID, a tensão limiar do transistor MOS foi variada usando o método de simulação Monte Carlo, tendo em conta as variações da tensão limiar que apresentam os transistores FG submetidos na radiação ionizante. O estudo obteve como resultado a confirmação da perda de carga do FG à medida que é incrementada a dose de radiação, o que implica uma alteração na característica de retenção de carga que caracteriza as células de memórias não voláteis (Non Volatile Memory - NVM). / In this dissertation work, a study of the the floating gate Transistor (FG transistor) performed. The focus in the electrical modeling, and the analysis of the impact of the Total Ionizing Dose (TID) on the electrical performance of the device. Aiming electrical level simulation, different electric simulation models for the FG transistor in read conditions (DC analysis) were evaluated and the model best suited for implementation into the simulation tool was selected. The selected model is based on Floating Gate voltage calculation as a function of polarization voltage of the FG transistor terminals, the stored charge value in the Floating Gate and the capacitive coupling coefficient presented by this device. For the TID analysis the threshold voltage of the MOS transistor was shifted by means of a Monte Carlo simulation method, considering the threshold voltage variations when the FG transistor is subjected to the ionizing radiation.The analysis lead to the confirmation that the loss charge stored in the FG increases with the radiation dose, affecting the retention characteristics of the memory cells.

Made available in DSpace on 2015-04-11T13:56:28Z (GMT). No. of bitstreams: 1 diego morgado.pdf: 2099766 bytes, checksum: 9e0278397da3905032c1416e8bdd585a (MD5) Previous issue date: 2013-10-29 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Juveniles mortality of tambaqui at the end and after transportation can cause damages to producer and consequently compromising the productivity of the culture. Thus, the present study had the objective to test the water:oxygen ratio, density and duration of transport of tambaqui closed system. In the first experiment, the juveniles were transported for 6 hours with densities of 67, 50, 40 and 33 fish/L, which tested different proportions of water:oxygen ratio in the transportation bags , namely, 1:3 , 1:2 , 1:1.4 and 1:1. In the second experiment, the juveniles were transported for 6 hours at a proportion 1:3 of the water:oxygen ratio, which tested the densities of 67, 87, 107 and 133 fish/L. In the third experiment, the juveniles were transported at a proportion 1:3 of water:oxygen ratio and density of 133 fish/L, which were tested the time of 6h , 12h , 18h and 24h of transportation. In all experiments, mortality was evaluated at the end (opening the bags) and after transportation, in floating cages, during intervals of 6h, 12h, 18h, 24h and 30h, as well as the quality of water. The ratio water:oxygen, density and time of transportation had no significant relation with mortality at the end and until to 30 hours after transportation. The condition biotic and/or abiotic of ponds was a limiting factor for mortality of tambaqui after transportation. The water quality parameters remained within acceptable limits for the maintenance and development of the specie at the end and until to 30 hours after transportation. So that the ratio water:oxygen, density and time of transportation did not influence the mortality of tambaqui at the end and until to 30 hours after transportation, but the condition of the ponds, where fish were kept after transportation, yes. / A mortalidade de juvenis de tambaqui (Colossoma macropomum) no final e depois do transporte pode comprometer a produtividade do cultivo. Sendo assim, o presente trabalho teve como objetivo testar a relação água:oxigênio, a densidade e a duração do tempo de transporte de juvenis de tambaqui em sistema fechado. No primeiro experimento, os juvenis foram transportados durante 6 horas com densidades de 67, 50, 40 e 33 peixes/L, onde foram testadas diferentes proporções da relação água:oxigênio nos sacos de transporte, a saber: 1:3, 1:2, 1:1,4 e 1:1. No segundo experimento, os juvenis foram transportados durante 6 horas na proporção de 1:3 da relação água:oxigênio, onde foram testadas densidades de 67, 87, 107 e 133 peixes/L. No terceiro experimento, os juvenis foram transportados na proporção de 1:3 da relação água:oxigênio e na densidade de 133 peixes/L, onde foram testados os tempos de 6h, 12h, 18h e 24h de transporte. Em todos os experimentos a mortalidade foi avaliada no final (abertura dos sacos) e depois do transporte em tanques-rede durante os intervalos de 6h, 12h, 18h, 24h e 30h, bem como a qualidade da água. A relação água:oxigênio, a densidade e a duração do tempo de transporte não tiveram relação significativa com a mortalidade no final e até 30 horas depois do transporte. A condição biótica e/ou abiótica dos viveiros foi um fator limitante para a mortalidade de juvenis de tambaqui após o transporte. Os parâmetros de qualidade da água permaneceram dentro dos limites aceitáveis para a manutenção e desenvolvimento da espécie no final e até 30 horas depois do transporte. De maneira que, a relação água:oxigênio, a densidade e a duração do tempo de transporte não influíram na mortalidade de juvenis de tambaqui no final e até 30 horas depois do transporte, e sim a condição dos viveiros onde os peixes foram mantidos após o transporte.

Este trabalho apresenta o estudo do efeito de elevação atípica da transcondutância na região linear de polarização devido ao efeito de corpo flutuante induzido pela porta (Gate Induced Floating Body Effect - GIFBE) de transistores da tecnologia SOI nMOSFET. Este estudo foi realizado com base em resultados experimentais e em simulações numéricas, as quais foram essenciais para o entendimento físico deste fenômeno. Além de contribuir com a explicação física deste fenômeno, este trabalho explora o efeito de corpo flutuante em diferentes estruturas (transistor de porta única, transistor de porta gêmea, transistor de múltiplas portas e transistores de canal tensionado), diferentes tecnologias e em função da temperatura (100K a 450K). A partir do estudo realizado em dispositivos SOI de porta única analisouse a influência das componentes da corrente de porta que tunelam através do óxido de porta do dispositivo, o potencial da região neutra do corpo do transistor, a taxa de recombinação de portadores, o impacto da redução da espessura do óxido de porta e também as dimensões físicas do transistor. Na análise feita da redução do comprimento de canal, verificou-se também que o GIFBE tende a ser menos significativo para dispositivos ultra-submicrométricos. Analisou-se também o efeito da elevação atípica da transcondutância para transistores SOI totalmente depletados, para os quais, este efeito ocorre apenas quando a segunda interface está acumulada, para as duas tecnologias estudadas (65nm e 130nm). A análise dos dispositivos de porta gêmea, que tradicionalmente são usados com a finalidade de minimizar o efeito de elevação abrupta de corrente de dreno, mostrou uma redução do GIFBE para este tipo de estrutura quando comparada à de porta única devido ao aumento da resistência série intrínseca à estrutura. O efeito de corpo flutuante também foi avaliado em função da temperatura de operação dos dispositivos. Para temperaturas variando de 100K a 450K, notou-se que o valor do limiar de GIFBE aumentou tanto para temperaturas acima de 300K quanto abaixo da mesma. Quando estes resultados são apresentados graficamente, observa-se que o comportamento do limiar de GIFBE com a temperatura resulta no formato de uma letra C, onde o valor mínimo está a 300K. Este comportamento se deve à competição entre o processo de recombinação e a degradação efetiva da mobilidade. Uma primeira análise do GIFBE em diferentes estruturas de transistores também foi realizada. Apesar dos transistores de canal tensionado apresentarem o efeito para valores menores de tensão de porta, este efeito se manifesta com menor intensidade nestes transistores, devido a alta degradação da mobilidade efetiva apresentada pelo mesmo. Entretanto, quando o foco são os transistores de múltiplas portas, os resultados obtidos demonstram que apesar destes dispositivos terem sido fabricados com dielétrico de porta de alta constante dielétrica, o GIFBE ainda ocorre. Esta ocorrência do GIFBE em FinFETs é fortemente dependente da largura do Fin, da dopagem da região de canal e conseqüentemente do acoplamento das portas laterais com a superior. / This work presents the study of the Gate Induced Floating Body Effect (GIFBE) that occurs in the SOI MOSFET technology. This study has been performed based on experimental results and on numerical simulations, which were an essential auxiliary tool to obtain a physical insight of this effect. Besides the contribution on the physical explanation of this phenomenon, in this work, the floating body effect was evaluated for different structures (single gate and twin-gate transistors), different technologies (130nm and 65nm SOI CMOS technology) and as a function of the temperature (100K to 450K). From the study of the single gate devices, it was evaluated the gate tunneling current influence on GIFBE, the body potential in the neutral region, the recombination rate, the front gate oxide thickness reduction impact, besides the physical dimensions of the transistor. In the performed analysis, taking into account the channel length reduction, it was verified that the GIFBE tends to be less important for ultra-submicron devices. The GIFBE only occurs for fully depleted devices when the second interface is accumulated. In this situation, the floating body effect influence on fully depleted devices was also studied for both technologies (65nm and 130nm). The twin-gate devices analysis, that traditionally are used in order to minimize the Kink effect, show a GIFBE reduction for this structure when it is compared to the single gate one. This enhance in the electrical characteristics is due to the series resistance increase that is intrinsic of this structures. When the temperature variation from 100K to 450K was analyzed, it was obtained the C shape behavior for the floating body effect due to a competition between the recombination process and the effective mobility degradation factor. A first evaluation of the GIFBE occurrence in new devices was also performed. When the focus is the strained silicon transistor, a occurrence of GIFBE was obtained for a lower gate voltage. Although, the GIFBE occurs earlier for strained transistor. This effect is less pronounced in this device because it presents strong effective mobility degradation. When the focus is FinFETs, the results show that although this device was fabricated with a high-k gate dielectric, the GIFBE still occurs and is strongly dependent on the device channel width.

The motivation for this thesis was the need for further development of multibody dynamics simulation packages focused on detailed contact analysis. The thesis makes contributions in three different areas: Part I summarizes the equations, algorithms and design decisions necessary for dynamics simulation of flexible bodies with moving contacts. The assumed general shape function approach is presented. Additionally, the described technique enables studies of the residual stress release during grinding of flexible bodies. The proposed set of mode shapes was also successfully applied for modeling of heat flow. Part II is motivated by the need to reduce the computation time. The availability of the new cost-efficient multiprocessor computers triggered the development of the presented hybrid parallelization framework. The framework is designed to be easily portable and can be implemented without any system level coding or compiler modifications. Part III is motivated by the need for inter-operation with other simulation tools. A co-simulation framework based on the Transmission Line Modeling (TLM) technology was developed. The framework enables integration of several different simulation components into a single time-domain simulation. The framework has been used for connecting MSC.ADAMS and SKF BEAST simulation models. Throughout the thesis the approach was to present a practitioner roadmap. The detailed description of the theoretical results relevant for a real software implementation is put in focus. The software design decisions are discussed and the results of real industrial simulations are presented. This work has been supported by SKF, SSF/ProViking, ECSEL, KK-stiftelsen.

Les limites physiques des circuits à base de silicium étant en passe d'être atteintes, de nouveaux moyens doivent être trouvés pour outrepasser la fin de la loi de Moore. Beaucoup d'applications peuvent tolérer des approximations dans leurs calculs à différents niveaux, sans dégrader la qualité de leur sortie, ou en la dégradant de manière acceptable. Cette thèse se concentre sur les architectures arithmétiques approximatives afin de saisir cette opportunité. Tout d'abord, une étude critique de l'état de l'art des additionneurs et multiplieurs approximatifs est présentée. Ensuite, un modèle de propagation d'erreur virgule-fixe mettant en œuvre la densité spectrale de puissance est proposée, suivi d'un modèle de propagation du taux d'erreur binaire positionnel des opérateurs approximatifs. Les opérateurs approximatifs sont ensuite utilisés pour la reproduction des effets de la VOS dans les opérateurs arithmétiques exacts. Grâce à notre outil de travail open-source ApxPerf et ses bibliothèques synthétisables C++ apx_fixed pour les opérateurs approximatifs et ct_float pour l'arithmétique flottante basse consommation, deux études consécutives sont proposées, basées sur des applications de traitement du signal complexes. Tout d'abord, les opérateurs approximatifs sont comparés à l'arithmétique virgule-fixe, et la supériorité de la virgule-fixe est soulignée. Enfin, la virgule fixe est comparée aux petits flottants dans des conditions équivalentes. En fonction des conditions applicatives, la virgule-flottante montre une compétitivité inattendue face à la virgule-fixe. Les résultats et discussions de cette thèse donnent un regard nouveau sur l'arithmétique approximative et suggère de nouvelles directions pour le futur des architectures efficaces en énergie. / The physical limits being reached in silicon-based computing, new ways have to be found to overcome the predicted end of Moore's law. Many applications can tolerate approximations in their computations at several levels without degrading the quality of their output, or degrading it in an acceptable way. This thesis focuses on approximate arithmetic architectures to seize this opportunity. Firstly, a critical study of state-of-the-art approximate adders and multipliers is presented. Then, a model for fixed-point error propagation leveraging power spectral density is proposed, followed by a model for bitwise-error rate propagation of approximate operators. Approximate operators are then used for the reproduction of voltage over-scaling effects in exact arithmetic operators. Leveraging our open-source framework ApxPerf and its synthesizable template-based C++ libraries apx_fixed for approximate operators, and ct_float for low-power floating-point arithmetic, two consecutive studies are proposed leveraging complex signal processing applications. Firstly, approximate operators are compared to fixed-point arithmetic, and the superiority of fixed-point is highlighted. Secondly, fixed-point is compared to small-width floating-point in equivalent conditions. Depending on the applicative conditions, floating-point shows an unexpected competitiveness compared to fixed-point. The results and discussions of this thesis give a fresh look on approximate arithmetic and suggest new directions for the future of energy-efficient architectures.

Research macroeconomists have witnessed remarkable methodological developments in mathematical, statistical, and computational tools during the last two decades. The three essays in this dissertation took advantage of these advances to analyze important macroeconomic issues. The first essay, “ Habit Formation, Adjustments Costs, and International Business Cycle Puzzles” analyzes the extent to which incorporating habit formation and adjustment costs in investment in a one-good two-country general equilibrium model would help overcome some of the international business cycle puzzles. Unlike standard results in the literature, the model generates persistent, cyclical adjustment paths in response to shocks. It also yields positive cross-country correlations in consumption, employment, investment, and output. Cross-country correlations in output are higher than the ones in consumption. This is qualitatively consistent with the stylized facts. These results are particularly striking given the predicted negative correlations in investment, employment, and output that are typically found in the literature. The second essay, “Comparison Utility, Endogenous Time Preference, and Economic Growth,” uses World War II as a natural experiment to analyze the degree to which a model where consumers' preferences exhibit comparison-based utility and endogenous discounting is able to improve upon existing models in mimicking the transitional dynamics of an economy after a shock that destroys part of its capital stock. The model outperforms existing ones in replicating the behavior of the saving rate (both on impact and along the transient paths) after this historical event. This result brings additional support to the endogenous rate of time preference being a crucial element in growth models. The last essay, “Monetary Policy under Fear of Floating: Modeling the Dominican Economy,” presents a small scale macroeconomic model for a country (Dominican Republic) characterized by a strong presence of fear of floating (reluctance to have a flexible exchange rate regime) in the conduct of monetary policy. The dynamic responses of this economy to external shocks that are of interest for monetary policy purposes are analyzed under two alternative interest rate policy rules: One being the standard Taylor rule and another that responds explicitly to deviations of the exchange rate with respect to its long-term trend.