Dans ce manuscrit de thèse, nous nous intéressons au couplage entre le champ électromagnétique quantifié au sein d'un résonateur optique et la transition cyclotron d'un gaz d'électrons bidimensionnel soumis à un champ magnétique perpendiculaire. Nous montrons que ce système peut atteindre un régime de couplage ultrafort inédit, dans lequel la fréquence de Rabi du vide (quantifiant l'intensité de l'interaction lumière-matière) devient comparable ou plus grande que la fréquence de la transition cyclotron pour des facteurs de remplissage suffisamment élevés. Nos prédictions théoriques ont alors donné lieu à une vérification expérimentale spectaculaire. En outre, nous avons généralisé la théorie au cas du graphène dont les excitations de basse énergie sont convenablement décrites par un hamiltonien de Dirac sans masse. Nous montrons que si le couplage ultrafort peut également être atteint dans ce cas, des différences qualitatives importantes apparaissent par rapport au cas des fermions massifs du semiconducteur.

Hydrogen is added to Graphene in various compositions and configurations to modify the band structure to produce a suitable band gap for microelectronic applications. Optical and vibrational spectra are calculated as a means of characterization. Calculations performed using DFT and Quantum Espresso. / UOIT

The quest for obtaining higher Tc superconductivity led to the discovery of cuprates about 20 years ago. Since then, they continue to puzzle the scientific community with their bizarre properties like non-BCS superconductivity, pseudo gap, Fermi arcs, linear T resistivity etc. Since these materials show unusually high Tc, a novel mechanism is at play and strong correlations are believed to play an important role. The theme of this thesis work is to study physics of such strongly correlated systems in two dimensions at T = 0 along with development of new theoretical tools necessary for the study. The focus of the thesis is on the ground state studies of strongly correlated models like t-J and Hubbard models using variational Monte Carlo (VMC) and renormalized mean field theory (RMFT). The general method is to propose a variational wave function, motivated by the physics ideas, to be a candidate ground state of the system. Methods to efficiently evaluate the ground state energy and minimizing it with respect to the variational parameters are developed in this work. Antiferromagnetism-superconductivity competition and electron-hole asymmetry in the extended t-J model is investigated. The main result of this work is that increasing the magnitude of the next neighbor hopping (t') on hole doped side strengthen superconductivity while it stabilizes antiferromagnetism on the electron doped side. It is also shown that it is possible to characterize the T = 0 phase diagram with just one parameter called as Fermi Surface Convexity Parameter (FSCP). Next, the possibility of phase separation in the t-J model on a square lattice is investigated using local RMFT technique. It is found that for certain doping, the system phase separates into regions with antiferromagnetic and superconducting orders. Next, the role played by crystalline anisotropy of orthorhombic YBCO cuprates on their properties is examined using anisotropic tx-ty-J model and this ground state study suggests that the anisotropies seen in their properties are plausible solely due to the crystalline anisotropy. A new general method to study strongly correlated systems with singlet ground states is developed and tested in this thesis work. The last part of the thesis explores the possibility of high Tc superconductivity in graphene which is a intermediate coupling resonating valence bond (RVB) system. It is found that undoped graphene is not a superconductor, consistent with the experiments. On doping, the ground state of graphene is found to be a superconductor with “d+id” symmetry whose strength shows a dome as a function of doping which is reminiscent of RVB physics.

The discovery of unique properties of graphene has led to the development of graphene for a variety of applications like integrated circuits, organic electronic devices, supercapacitors, sensors, and composite materials. Fluorination of graphene enables control of its physical, chemical, and electronic properties. Our initial studies demonstrated the viability of sulfur hexafluoride plasmas to fluorinate epitaxial graphene as a safer alternative to the commonly reported techniques of fluorination that include exposures to fluorine and xenon difluoride gas. Formation of carbon-fluorine bonds after SF6 plasma-treatment was confirmed by x-ray photoelectron spectroscopy. Raman spectroscopy and low-energy electron diffraction studies suggest that the framework of sp2-hybridized carbon atoms remains intact after the plasma-treatment. Increase in work function after the fluorination was determined by ultra-violet photoelectron spectroscopy. The findings of our subsequent investigation to controllably modify the work function of epitaxial graphene via plasma-fluorination indicate that the work function of fluorinated epitaxial graphene is controlled by the polarity of carbon-fluorine bonds. Further studies to investigate the effect of the surface topography of epitaxial graphene on the work function of plasma-fluorinated epitaxial graphene were performed using scanning Kelvin probe microscopy (SKPM). The results of SKPM characterization of plasma-fluorinated epitaxial graphene demonstrated that the increase in the work function of epitaxial graphene after plasma-treatment is independent of its surface topography, but non-uniform fluorination may result from non-uniformities in plasma density.

The interconnect fabric that provides electrical connectivity to active devices is an essential component to modern semiconductor chips. As the dimensions of these devices are scaled to improve performance and keep pace with Moore's Law, the local Cu interconnects must scale in parallel. Intrinsic material properties of Cu result in spiking electrical resistivity with scaling and present a looming bottleneck to chip performance. In this thesis, we introduce graphene as a replacement material to Cu interconnects in support of future chip scaling. In particular we focus on experimentally establishing fundamental mechanisms of chemically doping graphene via the basal plane and edge passivation, with broad contributions that extend beyond the focus of local interconnects.

In this thesis, we show that planar graphene ribbons have properties similar to those of nanotubes. Both exhibit semiconducting or metallic properties depending on crystal orientation. The band gap varies approximately as the inverse of the ribbon width. Both can be doped and gated. Due to these similarities, the patterned graphene also has nanotube like transport properties, which include coherent transport, ballistic transport, and high current capabilities. In essential contrast to nanotubes, graphene ribbons can be rationally patterned using standard electron beam lithography methods; functional graphene devices could be fabricated eliminating the need for metal interconnects on the wafer. This would remove many obstacles faced by carbon nanotubes, while retaining the benefits of high carrier mobility and quasi-1D transport. We have produced ultrathin epitaxial graphite films on single-crystal silicon carbide by vacuum graphitization, which show remarkable 2D electron gas (2DEG) behavior. The most highly ordered samples exhibit Shubnikov-de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nanopatterned epitaxial graphene (NPEG) with the potential for large-scale integration. The research created a foundation for graphene science and technology and established a path toward graphene-based nanoelectronics.

In this study, we used the Density functional theory (DFT) and Molecular dynamics (MD) to obtain the suitable hydrogen storage structure of Rh nanoclusters on the boron nitride sheet and Li atoms on the graphene. The reason of studying two type of nanoparticles is that there are two adsorption method in hydrogen storage, such as the adsorption of hydrogen molecules and hydrogen atoms. Using Rh nanoclusters on the boron nitride sheet to store hydrogen belong to the adsorption of hydrogen atoms. Using Li atoms on the graphene to store hydrogen belong to the adsorption of hydrogen molecules. We use these two models to simulate the hydrogen storage in this study. There were four parts in this study: The first part: The Density functional theory is utilized to obtain the configuration and corresponding energy of Rh nanoclusters, boron nitride sheet, Rh nanoclusters adsorbed on the boron nitride sheet, Li atoms adsorbed on the graphene, hydrogen adsorbed on the graphene and hydrogen adsorbed on the Li atoms. Then, we use the Force-matching method (FMM) to modify the parameters of potential function by the reference data which are obtained by Density functional theory. Finally, we use the modified parameters of potential function to perform Molecular dynamics in this study. The second part: In this part, the dynamical behavior of Rh nanoclusters with different sizes on the boron nitride sheet are investigated in temperature-rise period. The migration trajectory, square displacement and mean square displacement of the mass center of the Rh nanoclusters are used to analyze the dynamics behavior of Rh nanoclusters on the boron nitride sheet. The third part: In this part, the pristine graphene and graphen with Li atoms are investigated the efficiency of hydrogen storage at different temperature and pressure. In order to obtain the temperature (77K and 300K) and pressure effect of hydrogen storage, the densimetric distribution and gravimetric capacity (wt%) are analyzed. The fourth part: The Molecular dynamics is utilized to study the hydrogen storage and delivery when the distance between two graphene is different. Then, the temperature effect (77K and 300K) of hydrogen storage, the gravimetric capacity (wt%) are analyzed. In addition, the gravimetric capacity (wt%) of hydrogen delivery are also analyzed in the larger system space at 300K.

With the progress of technology, large capacity and scalable are required for the future. Recent years, the physical limit is approached and a next-generation memory is needed in the future. In addition, non- volatile memory occupies more than 96% in the memory market, and RRAM has great advantages such as simple structure, high scalable, low operation voltage, high operation speed, high endurance and retention. That is the reason RRAM is the candidate in the next generation. In this experiment, multi-sputtering was used to deposit Zr:SiO 2 and Pt on TiN bottom electrode. The sandwich structure was metal/insulator/metal (MIM). With the different dielectric constant material, a different electrical field will be produced. And then I-V measurement and materials analysis were used to investigate the characteristic of the RRAM. At first, a forming process is required to the RRAM. The device was swept from negative to positive voltage and obtained the conduction mechanism from curve fitting. The different dielectric constant materials were used to fabricate the RRAM. High and low dielectric materials were HfO 2 and BN, respectively. The electric field distribution is centralized in low dielectric material so the electrons will drift to the direction of electric field. Hence, the Vset will be centralized and more stable. We also fabricated a Zr:SiO 2 /C:SiO 2 RRAM as an high K and low K material. The current fitting results that a hopping conduction occurs in low resistive state (LRS) and high resistive state (HRS). Both from Raman spectrum and FT-IR spectrum, a graphene oxide was existed in the C:SiO 2 thin film. While the filament was form, the tip of the filament will approach the graphene oxide because of the point effect. Hence, the resistance switching will happen in the grapheme oxide and set voltage will be more stable and lower the operated current. Next, an ICP treatment was used in order to "burn" the carbon in SiO 2 . The purpose is to make an extremely low K material and ignore the effect of the existence of carbon. From the FT-IR spectrum, the carbon signals were disappeared after the ICP oxygen plasma treatment. In the I-V fitting diagram, space char limit results in the high voltage region. The electrical field simulation was an auxiliary tool which shows a strong electrical field occurs in the extremely low K area. While the electrons flow through the conduction path, they will be confined in the porous area. The operation current will decrease because of the limited conduction area.

Chitosan is widely investigated for biomedical applications due to its excellent properties, such as biocompatibility, biodegradability, bioadhesivity, antibacterial, etc. In the field of neural engineering, it has been extensively studied in forms of film and hydrogel, and has been used as scaffolds for nerve regeneration in the peripheral nervous system and spinal cord. One of the main issues in neural engineering is the incapability of neuron to attach on biomaterials. The present study, from a new aspect, aims to take advantage of the bio-adhesive property of chitosan to develop chitosan-based materials for neural engineering, specifically in the fields of brain repair and neuroprosthetics. Neuronal responses to the developed biomaterials will also be investigated and discussed.In the first part of this study (Chapter II), chitosan was blended with a well-studied hydrogel material (agarose) to form a simply prepared hydrogel system. The stiffness of the agarose gel was maintained despite the inclusion of chitosan. The structure of the blended hydrogels was characterized by light microscopy and scanning electron microscopy. In vitro cell studies revealed the capability of chitosan to promote neuron adhesion. The concentration of chitosan in the hydrogel had great influence on neurite extension. An optimum range of chitosan concentration in agarose hydrogel, to enhance neuron attachment and neurite extension, was identified based on the results. A “steric hindrance” effect of chitosan was proposed, which explains the origin of the morphological differences of neurons in the blended gels as well as the influence of the physical environment on neuron adhesion and neurite outgrowth. This chitosan-agarose (C-A) hydrogel system and its multi-functionality allow for applications of simply prepared agarose-based hydrogels for brain tissue repair.In the second part of this study (Chapter III), chitosan was blended with graphene to form a series of graphene-chitosan (G-C) nanocomposites for potential neural interface applications. Both substrate-supported coatings and free standing films could be prepared by air evaporation of precursor solutions. The electrical conductivity of graphene was maintained after the addition of chitosan, which is non-conductive. The surface characteristic of the films was sensitively dependent on film composition, and in turn, influenced neuron adhesion and neurite extension. Biological studies showed good cytocompatibility of graphene for both fibroblast and neuron. Good cell-substrate interactions between neurons and G-C nanocomposites were found on samples with appropriate compositions. The results suggest this unique nanocomposite system may be a promising substrate material used for the fabrication of implantable neural electrodes. Overall, these studies confirmed the bio-adhesive property of chitosan. More importantly, the developed chitosan-based materials also have great potential in the fields of neural tissue engineering and neuroprosthetics.

Thesis (Ph. D.)--University of California, Riverside, 2009. / Includes abstract. Available via ProQuest Digital Dissertations. Title from first page of PDF file (viewed March 12, 2010). Includes bibliographical references (p. 96-107). Also issued in print.