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Efeito Hall de spin em poços quânticos com acoplamento spin-órbita inter-subbanda / Spin Hall effect in quantum wells with intersubband spin-orbit couplingHachiya, Marco Antonio de Oliveira 19 February 2009 (has links)
A partir da teoria de resposta linear (formalismo de Kubo) calculamos a condutividade de spin $\\sigma_^$ para um gás bidimensional de elétrons formado num poço quântico com duas subbandas devido a atuação de um novo tipo de interação spin-órbita [Bernardes et al. \\textit{Phys. Rev. Lett.} \\textbf, 076603 (2007) \\& Calsaverini \\textit{et al}. \\textit{Phys. Rev. B} \\textbf, 155313 (2008)]. Este novo termo é não-nulo mesmo em estruturas simétricas e surge devido ao acoplamento entre os estados confinados no poço de paridades diferentes. Encontramos um valor para $\\sigma_^$ não-nulo e não-universal (dependente da intensidade do acoplamento $\\eta$) quando somente uma das subbandas está ocupada, ao contrário de Rashba. Para encontrarmos valores realistas para $\\sigma_^$, determinamos $\\eta$ via cálculo autoconsistente. Esse cálculo é executado para diferentes valores de densidade eletrônica em poços simples e duplos. Obtivemos que $\\sigma_^$ possui um comportamento não-monótono e sofre inversão de sinal como função da energia de Fermi (densidade de elétrons) conforme ela varia entre as duas subbandas. Contudo nossos resultados indicam que a condutividade Hall de spin é muito pequena $\\left(``\\ll \\frac{8\\pi}\"ight)$ nesses sistemas (poços simples e duplos) e possivelmente não mensurável. / Using the Kubo linear response theory, we investigate spin Hall conductivity $\\sigma_^$ in a two-dimensional electron gas in quantum wells with two subbands, when intersubband-induced spin-orbit coupling is operative [Bernardes et al. \\textit{Phys. Rev. Lett.} \\textbf, 076603 (2007) \\& Calsaverini \\textit{et al}. \\textit{Phys. Rev. B} \\textbf, 155313 (2008)]. This new spin-orbit term is non-zero even in symmetric structures and it arises from the distinct parity of the confined states. We find non-zero and non-universal $\\sigma_^$ (dependent on spin-orbit coupling strength $\\eta$) when only one of the subbands is occupied. This is in contrast to the Rashba spin-orbit interaction for which $\\sigma_^$ is identically zero. To obtain realistic values for $\\sigma_^$, we develop a self-consistent scheme to calculate $\\eta$. We performed this calcultion for different values of the eletronic density in single and double wells. We find that $\\sigma_^$ shows a non-monotonic behavior and a sign change as the Fermi energy (carrier density) varies between the two subband edges. However, our results indicate that $\\sigma_^$ is extremely small $\\left(``\\ll \\frac{8\\pi}\"ight)$ and possibly not measurable.
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Propriedades elétricas e vibracionais de nitretos cúbicos do grupo III / Vibrational and electrical properties of cubic group III nitridesFernández, José Rafael León 10 December 2001 (has links)
Esta tese está dirigida ao estudo das propriedades elétricas e ópticas das camadas cúbicas de InN, GaN (intrínseco), GaN:Si (tipo-p), GaN:Si (tipo-n) e AlGaN. Por meio da técnica de efeito Hall e utilizando a configuração de Van der Pauw foram obtidas as curvas de resistividade, concentração e mobilidade em função da temperatura das camadas e através destas curvas é determinada a energia de ativação dos aceitadores e doadores. Também através das mesmas curvas são estudados os principais mecanismos que predominam no espalhamento dos portadores. Em alguns casos um comportamento anômalo foi observado (curvas de concentração e mobilidade do InN e GaN:Si (tipo-p)) e os resultados foram corrigidos utilizando-se o modelo de duas camadas e/ou modelo de duas bandas. Para o material c-InN medimos sua resistividade, concentração e mobilidade na região de baixas temperaturas para investigar um possível caráter supercondutor da amostra. Abordaremos também nesta tese o estudo teórico e experimental sobre a transição metal-semicondutor nos nitretos. Para o estudo das propriedades ópticas das camadas foi utilizada a técnica de caracterização de Raman. Por meio desta técnica e utilizando a configuração de retro espalhamento foram caracterizadas as camadas cúbicas de GaN (intrínseco), GaN:Si (tipo-p), GaN:Si (tipo-n) e AlGaN. Dos espectros, foram obtidas as posições dos picos pertencentes aos fônons transversal-ópticos (TO) e longitudinal-ópticos (LO). Verificou-se o caráter cúbico das camadas e estudou-se a origem da banda que aparece entre as posições dos modos TO e LO do material. / The thesis is devoted to the study of electrical and optical properties of cubic InN, GaN (undoped), GaN:Si (type-p), GaN:Si (type-n) and AlGaN epitaxial films. For the study of the electrical properties were measured the resistivity, concentration and mobility curves as a function of the temperature by means of Hall effect and Van der Pauw configuration technique. From these curves were obtained the activation energy of donor and acceptors levels and were studied the main dominant mechanisms for the electron scattering. In some cases an anomalous behavior of the curves was observed and was corrected using the two layer model. For the study of the superconductivity character of the cubic InN sample was measured its resistivity, concentration and mobility in the low temperature region. The thesis is also devoted to the theoretical and experimental studies of the metal-non-metal transitions in the nitrites.The optical studies of the GaN (undoped), GaN:Si (type-p), GaN:Si (type-n) and AlGaN films were done by means of Raman characterization according to a backscattering configuration. From the spectra were obtained the position of the TO and LO phonon peaks, was verified the cubic character of the films and was studied the behavior of the band found between the TO and LO phonon peaks.
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The electrical and optical characterization of the InGaAs/InP alloy systemTowe, Elias D January 1981 (has links)
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1981. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Includes bibliographical references. / by Elias D. Towe. / M.S.
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Magnetization dynamics and pure spin currents in YIG/normal-metal systems / Dynamique de magnétisation et courants spin purs dans systèmes YIG/métal-normalHahn, Christian 17 October 2014 (has links)
Le domaine de recherche de la spintronique vise a concevoir des dispositifs électroniques misant sur le degré de libre de spin pour transporter de l'information. An d'intégrer ces courants de spin dans des dispositifs électroniques, il est particulièrement intéressant d'étudier l'inter-conversion d'un pur courant de spin en un courant de charge par l'effet Hall de spin, ainsi que le transfert de moment angulaire entre les électrons de conduction d'un métal normal (NM) et l'aimantation d'un ferromagnétique (FM) (couple de transfert de spin / pompage de spin). An de mieux comprendre ces différentes interaction, cette thèse se concentre sur l'étude du système hybride constitué de la juxtaposition d'un ferrimagnétique isolant, le grenat d'yttrium fer (YIG), et d'un métal normal _a fort couplage spin-orbite (Pt ou Ta), nécessaire pour bénéficier de la polarisation en spin de l'interface par un courant électrique dans le plan. Nous avons étudié le pompage de spin et la magnétorésistance produite par l'effet Hall de spin a l'interface entre des bicouches de YIG j Pt et YIG j Ta, et ceci sur des lms étendus de YIG de 200 nm d'épaisseur, produits par épitaxie en phase liquide. Nous observons que la tension électrique, produite par l'effet Hall de spin inverse, change de signe entre du Pt et du Ta confirmant ainsi l'inversion des signes de l'angle de Hall entre ces deux matériaux. En outre, en mesurant la variation de la tension de Hall inverse en fonction de l'épaisseur de la couche de Ta, nous avons réussi à borner la longueur de diffusion de spin dans le Ta. Tant le YIG j Pt et le YIG j Ta affiche une variation semblable de la magnétorésistance a effet Hall de spin en fonction de l'orientation du champ magnétique. Pour étudier l'inuence interfaciale du pompage de spin… / Spintronics aims at designing electronic devices which capitalize on the spin degree of freedom to transport information using spin currents. In order to incorporate spin currents intoelectronic devices, it is particularly interesting to study the interconversion from a spin current, the motion of spin angular momentum, to a charge current (Spin Hall Effect) as well as the transfer of spin angular momentum between the conduction electrons of a normal metal (NM) and the magnetization of a ferromagnet (FM) (Spin Transfer Torque/Spin Pumping). To investigate the interplay of those effects this thesis studies hybrid systems of the ferromagnetic insulator Yttrium Iron Garnet and normal metals with large spin-orbit coupling, a prerequisite for spin Hall e_ect. We study spin pumping and spin hall magnetoresistance in YIGjPt and YIGjTa bi-layers using extended _lms of 200 nm thick YIG, grown by liquid phase epitaxy. The inverse spin Hall voltages in Pt and Ta confirm the opposite signs of spin Hall angles in these two materials. Moreover, from the dependence of the inverse spin Hall voltage on the Ta thickness, we constrain the spin di_usion length in Ta. Both the YIGjPt and YIGjTa systems display a similar variation of resistance upon magnetic eld orientation, the spin Hall magnetoresistance. To study the inuence of interfacial spin pumping and a possible reverse e_ect, it is desirable to work with thin _lm thicknesses. A high quality 20 nm thick YIG _lm was grown by pulsed laser deposition, showing a damping similar to that of bulk YIG. We use nano-lithography to pattern series of YIG(20nm) and YIG(20nm)jPt(13nm) discs with diameters between 300 and 700 nm. The ferromagnetic resonance (FMR) spectra of the individual sub-micron sized samples are recorded through magnetic resonance force microscopy. . Passing dc-current through micron sized YIGjPt disks reveal a variation of the FMR linewidth consistent with the geometry and amplitude of the expected SHE transfer torque. In the absence of exciting microwave _elds, a variation in the magnetization is detected when the dc-current reaches the expected threshold for auto oscillations.
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Efeito Hall em supercondutores a campo magnético nulo / Hall Effect in Superconductors at Zero Magnetic FieldMário Sérgio da Luz 11 July 2008 (has links)
Este trabalho reporta a influencia da granularidade sobre a resistencia transversal em funcao da temperatura, RXY(T), medidas em amostras policristalinas dos sistemas supercondutores Bi2Sr2Ca-1-xPrxCu2O8+??e YBa2Cu3O7-?, e em monocristais de composicao Li0,9Mo6O17. Foi observada tensao nao nula na voltagem Hall, em campo magnetico aplicado nulo, nas proximidades da temperatura de transicao supercondutora (TC), para os tres sistemas em questao. A tensao Hall a campo zero se manifesta atraves de picos abaixo de TC, que esta relacionada com a componente longitudinal da resistencia e, por consequencia, com o carater granular das amostras. E apresentada tambem a existencia de uma assimetria no sinal Hall em campo magnetico aplicado. Estes comportamentos sao discutidos baseado no movimento de vortices e anti-vortices, de Josephson e Abrikosov no interior das amostras. Para monocristais de Li0,9Mo6O17 tambem foi observado efeito Hall a campo magnetico nulo. Alem do mais, uma nova relacao de anisotropia confirma o carater qause-unidmensional deste composto, mas mostra uma anisotropia menor do que aquela reportada previamente. Foi observado tambem que este material apresenta transicoes do tipo supercondutor-isolante (SIT) e metal- isolante (MIT) em temperaturas proximas ao zero absoluto. / This work reports the influence of the granularity on the transverse resistance as a function of temperature, RXY(T), in Bi2Sr2Ca1-xPrxCu2O8+??and YBa2Cu3O7-??polycrystalline samples, and Li0.9Mo6O17 single crystals. The effects of warming rate, temperature, applied magnetic field, and electrical current on the Hall resistance are reported. At zero magnetic field two peaks are observed in RXY(T) curves for the three compounds. The peaks are related to the double superconducting transition in the longitudinal component RXX(T) curves. In the superconducting and normal states no transverse voltage has been detected at zero magnetic field, as expected. The results are discussed within the framework of the motion of Abrikosov and Josephson vortices and anti-vortices. A new scaling relation between transverse and longitudinal voltages given by RXY ~ dRXX/dT has been confirmed. Regarding Li0.9Mo6O17 single crystals, Hall resistance at zero applied magnetic field was also observed. Furthermore, the results confirm the quasi-unidimensionality but show smaller anisotropic ratio than previously reported. Simultaneously, the result reveals that the Li0.9Mo6O17 is the first bulk superconducting compound exhibiting superconductor-insulator-transition (SIT) and metal-insulator-transition (MIT) behaviors.
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Efeito Hall em supercondutores a campo magnético nulo / Hall Effect in Superconductors at Zero Magnetic FieldLuz, Mário Sérgio da 11 July 2008 (has links)
Este trabalho reporta a influencia da granularidade sobre a resistencia transversal em funcao da temperatura, RXY(T), medidas em amostras policristalinas dos sistemas supercondutores Bi2Sr2Ca-1-xPrxCu2O8+??e YBa2Cu3O7-?, e em monocristais de composicao Li0,9Mo6O17. Foi observada tensao nao nula na voltagem Hall, em campo magnetico aplicado nulo, nas proximidades da temperatura de transicao supercondutora (TC), para os tres sistemas em questao. A tensao Hall a campo zero se manifesta atraves de picos abaixo de TC, que esta relacionada com a componente longitudinal da resistencia e, por consequencia, com o carater granular das amostras. E apresentada tambem a existencia de uma assimetria no sinal Hall em campo magnetico aplicado. Estes comportamentos sao discutidos baseado no movimento de vortices e anti-vortices, de Josephson e Abrikosov no interior das amostras. Para monocristais de Li0,9Mo6O17 tambem foi observado efeito Hall a campo magnetico nulo. Alem do mais, uma nova relacao de anisotropia confirma o carater qause-unidmensional deste composto, mas mostra uma anisotropia menor do que aquela reportada previamente. Foi observado tambem que este material apresenta transicoes do tipo supercondutor-isolante (SIT) e metal- isolante (MIT) em temperaturas proximas ao zero absoluto. / This work reports the influence of the granularity on the transverse resistance as a function of temperature, RXY(T), in Bi2Sr2Ca1-xPrxCu2O8+??and YBa2Cu3O7-??polycrystalline samples, and Li0.9Mo6O17 single crystals. The effects of warming rate, temperature, applied magnetic field, and electrical current on the Hall resistance are reported. At zero magnetic field two peaks are observed in RXY(T) curves for the three compounds. The peaks are related to the double superconducting transition in the longitudinal component RXX(T) curves. In the superconducting and normal states no transverse voltage has been detected at zero magnetic field, as expected. The results are discussed within the framework of the motion of Abrikosov and Josephson vortices and anti-vortices. A new scaling relation between transverse and longitudinal voltages given by RXY ~ dRXX/dT has been confirmed. Regarding Li0.9Mo6O17 single crystals, Hall resistance at zero applied magnetic field was also observed. Furthermore, the results confirm the quasi-unidimensionality but show smaller anisotropic ratio than previously reported. Simultaneously, the result reveals that the Li0.9Mo6O17 is the first bulk superconducting compound exhibiting superconductor-insulator-transition (SIT) and metal-insulator-transition (MIT) behaviors.
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Estudo de poços parabólicos largos de AIGaAs em campos magnéticos altos / Study of wide parabolic quantum wells of AlGaAs in high magnetic fielsMárquez, Angela María Ortiz de Zevallos 21 June 2007 (has links)
Neste trabalho, apresentamos os resultados de estudos com poços quânticos parabólicos (PQW, Parabolic Quantum Well ) de AlGaAs crescidos sobre substratos de GaAs pela técnica de epitaxia por feixe molecular. Medidas de transporte em PQWs do tipo n e do tipo p com larguras de 1000 ºA ate 4000 ºA em baixas temperaturas indicam um aumento abrupto do coeficiente Hall para um campo magnético critico de aproximadamente 3 T. Nosso estudo concentra-se na interpretação deste aumento observado. Com este propósito, estudamos através de cálculos autoconsistentes e de aproximações anal¶³ticas o processo de transferência de cargas em amostras com PQWs. Determinamos as densidades superficiais de cargas ns e ps, e comparamos estes resultados com os obtidos experimentalmente. Verificamos que os melhores resultados para a densidade de cargas (ns) s~ao aqueles determinados pelos cálculos autoconsistentes. No entanto, as aproximações analíticas se mostram importantes para descrever de forma qualitativa os resultados experimentais para amostras do tipo p. Numa segunda parte do nosso trabalho, estudamos a influencia da aplicação de campos magnéticos ao longo da direção de crescimento nas amostras com PQWs. Observamos uma diminuição na largura de densidade de cargas n(z) e do potencial total V (z). Estes resultados em combinação com o processo de transferência de cargas, levam a uma diminuição da densidade de portadores no poço, produto da redistribuição das cargas entre o poço e as camadas com dopagem de silencio. Desta forma, atribuímos o aumento no coeficiente Hall como sendo oriundo de uma diminuição da densidade de cargas dentro do PQW. / We present the results of experiments and calculations done on AlGaAs Parabolic Quantum Wells (PQWs) grown on GaAs by molecular beam epitaxial tecniques. Transport measurements in n-type and p-type samples with widths between 1000 ºA and 4000 ºA at low temperatures indicate an abrupt increase of the Hall coeficient at a critical field B ¼ 3 T. Our study focuses on the interpretation of this observed increase. To this end, we study by means of self-consistent numerical simulations and analytical approximations the charge transfer process in PQWs. We compare our results for the sheet densities with those observed experimentally. The best results are obtained for n-type samples for which we could numerical simulations. However, the analytical expressions we obtained also describe qualitatively the experimental results, and can be applied to p-type samples. In the second part of this work we study the efect of a magnetic feld applied perpendicular to the well. The simulations indicate a diminishing of the charge density and the total potential in the well. These results, combined with the charge transfer process, lead to a redistribution of charge between the well and the dopant layers. Therefore, we interpret the observed increase of the Hall coefcient as the result of a depletion of charge in the parabolic quantum well.
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Two-dimensional Tellurium: Material Characterizations, Electronic Applications and Quantum TransportGang Qiu (7584812) 31 October 2019 (has links)
<div>Since the debut of graphene, many 2D materials have emerged as promising candidates for silicon alternatives to extend Moore’s Law, such as MoS<sub>2</sub> and phosphorene. However, some common shortcomings such as low mobility, instability and lack of massive production methods limit the exploration and applications of these materials. Here, we introduce a novel member to the 2D category – high-mobility air-stable 2D tellurium film (tellurene).</div><div><br></div><div>Tellurium (Te) is a narrow bandgap semiconductor with unique one-dimensional chiral structure. Recently, a hydrothermal synthesizing method was developed to produce large-area tellurene nanofilms with thickness ranging from tens of nanometers down to few layers. In this thesis, a thorough investigation of Te properties in 2D quantum region was first carried out by various material characterization techniques including TEM and Raman spectroscopy. Potential applications of Te-based electronics, optoelectronic and thermoelectric devices were explored, and high-performance Te FETs were achieved with record-high drive current over 1 A/mm via device scaling and contact engineering. Magneto-transport, including weak anti-localization and Shubnikov-de-Haas oscillations was studied at cryogenic temperature. Quantum Hall effect was observed for the first time in both 2D electron and hole gases with mobility of 6,000 and 3,000 cm<sup>2</sup>/Vs, and non-trivial Berry phase in Te 2D electron system was detected as the first experimental evidence of massive Weyl fermions. This work not only demonstrates the great potential of tellurene films for electronics and quantum device applications, but also expands the spectrum of topological matters into a new material species - Weyl semiconductors.</div>
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Elaboration et caractérisation des propriétés magnétiques et de transport de films et multicouches à base de GdCo et de multicouches Fe/CrThanh Nam, Nguyen 05 November 2007 (has links) (PDF)
Cette thèse en cotutelle entre l'Université Joseph Fourier à Grenoble et l'Université Nationale du Vietnam à Hanoi traite de l'étude des propriétés magnétiques et électriques de structures basées sur GdCo et sur des multicouches Fe/Cr. GdCo est un alliage ferrimagnétique dont la composition peut être choisie afin d'obtenir la compensation, c'est à dire une aimantation nette nulle, à une température de compensation inférieure à la température de Curie. Les films ont été déposés par la technique de pulvérisation cathodique magnétron. Ils sont amorphes et possèdent une anisotropie perpendiculaire induite par la croissance. Proche de la température de compensation, l'aimantation spontanée est perpendiculaire et l'imagerie par effet Kerr polaire ainsi que l'effet Hall extraordinaire ont été largement utilisés pour étudier les films dans la gamme (4-300 K) et de 0 à 6 Tesla. Un gradient de composition dans le plan peut être induit et a entrainé l'étude d'une paroi de compensation d'aimantation nulle. Les contributions de Gd et Co à l'effet Hall extraordinaire ont été déterminées. Proche de la compensation, l'effet Hall à haut champ permet d'accéder au régime de spin flop. Des multicouches GdCo/Cu/NiFe pour lesquelles GdCo est à anisotropie perpendiculaire et NiFe à anisotropie planaire ont été élaborées. Elles présentent de la magnétorésistance géante (GMR) dont la valeur ne dépend pas de l'angle entre les aimantations nettes desdeux couches magnétiques. <br /> L'étude de la GMR des multicouches Fe/Cr traite de la contribution des interfaces au mécanisme GMR. En variant l'épaisseur du fer et en recuisant les multicouches, il est possible d'accéder aux contributions d'interface.
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Aspects of two dimensional magnetic Schrödinger operators: quantum Hall systems and magnetic Stark resonancesFerrari, Christian 06 June 2003 (has links) (PDF)
Cette thèse de doctorat concerne deux problèmes mathématiques issus de la mécanique quantique. On considère une particule quantique, non relativiste et sans spin, astreinte à se mouvoir sur une surface bidimensionnelle $\cal S$, plongée dans un champ magnétique homogène qui lui est perpendiculaire. Dans un premier problème, $(\cal S)=\R\times \mathbb(S)_L^1$, qui est un cylindre infini de circonférence $L$, ce qui correspond à des conditions aux bords periodiques. Dans le deuxième cas, $(\cal S)=\R^2$. En fonction du problème étudié, on ajoute un potentiel convenable. On est ainsi amené à étudier deux opérateurs de Schrödinger. Le premier opérateur analysé génère la dynamique d'une particule soumise à un potentiel aléatoire de type Anderson ainsi qu'un potentiel non aléatoire dont le but est de confiner la particule le long de l'axe du cylindre, sur une longueur $L$. Dans ce cas, on localise le spectre et on le classifie par le courant quantique porté par les fonctions propres correspondantes. On montre qu'il y a des régions spectrales où n'existent que des valeurs propres avec courant d'ordre un par rapport à $L$, et des régions spectrales où sont mélangées valeurs propres avec courant d'ordre un et valeurs propres avec courant infinitésimal par rapport à $L$. Ces resultats on un intétet physique dans le cadre de l'effect Hall entier. Le deuxième opérateur de Schrödinger étudié, correspond à la situation physique où le potentiel est donné par la somme d'un potentiel ``local'' et d'un potentiel dû à un petit champ électrique $F$ constant. Dans ce cas on montre que les états résonants induits par le champ électrique décroissent exponentiellement avec un taux donné par la partie imaginaire des valeurs propres d'un certain opérateur non auto-adjoint. On montre de plus que cette partie imaginaire possède une borne supérieure de l'ordre de $\exp(-1/F^2)$, pour $F$ tendant vers zéro. Ainsi, le temps de vie de l'état résonant en question est au moins de l'ordre de $\exp(1/F^2)$.
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