Quantum dots and nanorods are becoming increasingly important structures due to their potential applications that range from photovoltaic devices to medicine. The majority of the research on carrier dynamics in these structures has been in the optical regime, with little work performed at Terahertz frequencies where excitonic dynamics can be more directly probed. In this work, we examine theoretically the interaction of Terahertz radiation with colloidal CdSe nanorods to determine the dynamics of excitons generated via a short optical pulse. We calculate the energies and wavefunctions for the excitons within the envelope function approximation in the low density limit where there is at most one exciton per nanorod. The linear Terahertz transmittance and absorbance is found for nanorods that are approximately 70 nm in length and 7 nm in diameter and are compared with experimental results that have shown the first observation of intra-excitonic transitions in nanorods. We find absorbance peaks at 8.5 THz and 11 THz that result from polarizations in the longitudinal (rod axis) and transverse directions respectively. Our theoretical results show that the 8.5 THz and 11 Thz peaks are due to 1s-2pz and 1s-2px transitions respectively. The theoretical absorbance spectra is in good agreement with the experimental one and show that only the ground state is significantly populated 1 ps after optical excitation. This provides strong evidence of rapid trapping of excited holes into the ligand used to passivate the nanorods. A full set of dynamical equations were then constructed from Heisenberg's equation of motion, and were used to model the excitonic correlations as a function of time. Transmittance and absorbance were calculated for different nanorod orientations and electric field strengths in both the linear and nonlinear regime. These results were then averaged over nanorod orientation in order to more accurately reflect experimental conditions. Nonlinearity was found to become significant at peak pulse field strengths of 7 kV/cm and greater. Due to two-photon processes, we predict the 2pz-3dz transition that is not observed in the linear regime will be clearly seen in the nonlinear absorbance spectrum. / Thesis (Master, Physics, Engineering Physics and Astronomy) -- Queen's University, 2014-05-14 23:37:58.604

<p>The ability to detect infrared radiation is vital for a host of applications that include optical communication, medical diagnosis, thermal imaging, atmospheric monitoring, and space science. The need to actively cool infrared photon detectors increases their operation cost and weight, and the focus of much recent research has been to limit the dark current and create room-temperature infrared photodetectors appropriate for mid-to-long-wave infrared detection. Quantum dot infrared photodetectors (QDIPs) provide electron quantum confinement in three dimensions and have been shown to demonstrate high temperature operation (T>150 K) due to lower dark currents. However, these inorganic devices have not achieved sensitivity comparable to state-of-the-art photon detectors, due in large part to the inability to control the uniformity (size and shape) of QDs during strained-layer epitaxy.</p><p>The purpose of this dissertation research was to investigate the feasibility of room-temperature infrared photodetection that could overcome the shortfalls of QDIPs by using chemically synthesized inorganic colloidal quantum dots (CQDs). CQDs are coated with organic molecules known as surface ligands that prevent the agglomeration of dots while in solution. When CQDs are suspended in a semiconducting organic polymer, these materials are known as organic/inorganic hybrid nanocomposites. The novel approach investigated in this work was to use intraband transitions in the conduction band of the polymer-embedded CQD for room-temperature photodetection in the mid-wave, and possibly long-wave, infrared ranges. Hybrid nanocomposite materials promise room-temperature operation due to: (i) large bandgaps of the inorganic CQDs and the semiconducting polymer that reduce thermionic emission; and (ii) low dark current due to the three-dimensional electron confinement in the CQD and low carrier mobility in the semiconducting polymer. The primary material system investigated in this research was CdSe CQDs embedded in the conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-(1-cyanovinylene)phenylene] (MEH-CN-PPV). </p><p>Photoluminescence (PL) spectroscopy of MEH-CN-PPV thin films was conducted to determine the dependence of polymer morphology on deposition method in order to identify a reliable device fabrication technique. Three different deposition methods were investigated: drop-casting and spin-casting, which are solution-based; and matrix-assisted pulsed laser evaporation (MAPLE), which is a vacuum-based method that gently evaporates polymers (or hybrid nanocomposites) and limits substrate exposure to solvents. It was found that MAPLE deposition provides repeatable control of the thin film morphology and thickness, which is important for nanocomposite device optimization. </p><p>Ultra-fast PL spectroscopy of MEH-CN-PPV/CdSe thin films was investigated to determine the charge generation and relaxation dynamics in the hybrid nanocomposite thin films. The mathematical fitting of time-integrated and time-resolved PL provided a rigorous and unique model of the charge dynamics, which enabled calculation of the radiative and non-radiative decay lifetimes in the polymer and CQD. These results imply that long-lived electrons exist in the conduction band of the CQD, which demonstrate that it should be possible to generate a mid- to long-wave infrared photocurrent based on intraband transitions. In fact, room-temperature, intraband, mid-infrared absorption was measured in thin films of MEH-CN-PPV/CdSe hybrid nanocomposites by Fourier transform infrared (FTIR) absorbance spectroscopy. In addition, the hybrid nanocomposite confined energy levels and corresponding oscillator strengths were calculated in order to model the absorption spectrum. The calculated absorption peaks agree well with the measured peaks, demonstrating that the developed computer model provides a useful design tool for determining the impact of important materials system properties, such as CQD size, organic surface ligand material choice, and conduction band offset due to differences in CQD and polymer electron affinities.</p><p>Finally, a room-temperature, two terminal, hybrid nanocomposite mid-infrared photoconductor based on intraband transitions was demonstrated by FTIR spectral response measurements, measuring a spectral responsivity peak of 4.32 µA/W at 5.5µm (5 volts), and calibrated blackbody spectral photocurrent measurements, measuring a spectral responsivity peak of 4.79 µA/W at 5.7 µm (22 volts). This device characterization demonstrated that while the novel approach of intraband infrared photodetection in hybrid nanocomposites is feasible, significant challenges exist related to device fabrication and operation. Future work is proposed that could address some of these important issues.</p> / Dissertation

I present a detailed study of many-body effects associated with the interband 1s transition and intraband 1s-2p transition in two- and three-dimensional photo-excited semiconductors. I employ a previously developed excitonic model to treat effects of exchange and phase space filling. I extend the scope of the model to include static free-carrier screening. I also develop a factorization scheme to obtain a consistent set of excitonic dynamical equations. The exciton transition energies are renormalized by many-body interactions, and the excitonic dynamical equations provide simple expressions for the individual contributions of screening, phase space filling and exchange. The effects of exchange and phase space filling are quantified by a set of excitonic coefficients. I first calculate these coefficients analytically by omitting screening effects. In contrast, the screened coefficients involve multi-dimensional integrals which must be evaluated numerically. I present a detailed discussion of the numerical methods used to evaluate these integrals, which include a novel algorithm for segmenting multi-dimensional integration regions. The excitonic model correctly predicts the blue shift and bleaching of the 1s exciton resonance due to exchange and phase space filling. Free-carrier screening is found to enhance these effects by lowering the exciton binding energy. In contrast, the effects of free-carrier screening on the 1s-2p transition energy are more subtle. In the absence of free-carrier screening, exchange and phase space filling lead to a blue shift of the transition energy. However, screening decreases the 1s binding energy faster than the 2p binding energy, which in turn decreases the transition energy. Thus, screening effects oppose exchange and phase space filling, and the overall magnitude and sign of the 1s-2p transition energy shift depends on the free-carrier density. Specifically, for low-moderate excitation densities exchange and phase space filling can be dominated by screening, leading to a net red shift of the transition energy. The results for two- and three-dimensional systems are qualitatively similar, although the magnitudes of the shifts are much smaller in three dimensions. / Thesis (Master, Physics, Engineering Physics and Astronomy) -- Queen's University, 2011-05-31 15:58:27.222

[pt] Nas Forças Armadas do Brasil existe uma forte demanda pelo desenvolvimento de detectores de infravermelho nacionais para uso em diversas aplicações sujeitas a rígidas restrições de importação, como sistemas de imageamento infravermelho para visão noturna, guiamento de mísseis, sistemas de mira, etc. O objetivo deste trabalho foi desenvolver fotodetectores para o infravermelho distante em 10µm, baseados em estruturas semicondutoras de poços quânticos múltiplos de GaAs/AlGaAs utilizando transições intrabanda. Os materiais foram crescidos pela técnica de epitaxia de fase vapor de metalorgânicos (MOVPE). A calibração dos parâmetros de crescimento foi realizada por meio de medidas de difração de raios x, efeito Hall, e fotoluminescência. Devido à regra de seleção de que não é possível haver absorção intrabanda da luz sob incidência normal, foram aplicadas duas técnicas de acoplamento: geometria de guia de onda com incidência a 45º pela borda, e utilização de grades de difração metalizadas. Os detectores produzidos foram caracterizados quanto à corrente de escuro e quanto aos espectros de absorção óptica e de fotocorrente, ambos obtidos por espectroscopia FTIR. Ao final dos trabalhos, foi obtido um fotodetector de GaAs/AlGaAs do qual foi possível medir a fotocorrente através dos contatos elétricos do dispositivo, com pico em 9µm. Os resultados obtidos são promissores no sentido de que apontam para a possibilidade de se produzir detectores de infravermelho nacionais para diversas aplicações (defesa, medicina, astronomia, telecomunicações, etc). / [en] In the Brazilian Army there is a strong demand for the development of national infrared detectors for use in many applications subjected to severe trade restrictions, like infrared imaging systems for night vision, missile guidance, sight systems, etc. The aim of this work was to develop far- infrared photodetectors for 10µm, based on semiconductor structures of GaAs/AlGaAs multi-quantum wells using intraband transitions. The materials were grown by metalorganic vapor phase epitaxy (MOVPE). The calibration of the growing parameters was done by x ray diffraction, Hall effect, and photoluminescence measurements. Since intraband transition of light is not possible to normal incidence, due to selection rules, two coupling techniques were applied: waveguide geometry with 45o incidence on the edge, and metalized diffraction gratings. The produced detectors were characterized in terms of dark current, optical absorption and spectral response. Infrared measurements were made using FTIR spectroscopy. A GaAs/AlGaAs photodetector was obtained. The photocurrent through the electrical contacts of the device showed a peak at 9µm. The results are promising in the sense of revealing the possibility of producing national infrared photodetectors for many applications (defense, medicine, astronomy, telecommunications, etc).

[pt] Detectores de infravermelho possuem larga gama de aplicações em diversos setores, desde militares (visão noturna, mísseis) até civis (aparelhos eletrônicos). Nesta dissertação estivemos interessados nas absorções intrabanda de heteroestruturas multiepitaxiais com intuito de absorver infravermelho em 4,1 micra onde se localiza a primeira janela de transmissão atmosférica. Baseamos nossas heteroestruturas de poços quânticos em semicondutores da família III-V. Discorremos quanto a produção do dispositivo de forma detalhada, juntamente com todos os processos de calibração de cada etapa. O crescimento se dá pela técnica de MOVPE que possui alta precisão em termos da espessura e composição da camada depositada. Em seguida discutimos sobre o processamento da amostra crescida para expor os contatos elétricos. E finalizamos descrevendo o processo de integração do dispositivo sobre um suporte para leitura do sinal. Finalizada a etapa de produção, fizemos um estudo quanto às características da amostra tanto qualitativamente quanto quantitativamente. Este estudo objetivou a obtenção de duas informações: comparação direta entre as geometrias de acoplamento luminoso; e medição da eficiência dos detectores produzidos. Ao fim do trabalho obtivemos um fotodetector produzido desde seu crescimento até sua montagem final. Assim como os resultados da eficiência dos mesmos que já indicaram melhorias possíveis para trabalhos futuros. Visando a formação de um mercado de produção em larga escala de fotodetectores, este trabalho identificou áreas com carência de técnicas disponíveis e que necessitam de investimento. / [en] Infrared detectors have a wide range of applications in various industries, from military (night vision, missile) to civil (electronics). In this dissertation we were interested in the intraband absorption of multiepitaxial heterostructures with aim at absorption of 4.1 microns infrared where there s located the first atmospheric transmission window. We based our quantum well heterostructures in semiconductor from the III-V family. We discourse about the production of the device in detail, along with all the calibration procedures for each step. The growth is done by MOVPE technique that has high accuracy in terms of thickness and composition of the deposited layer. We then discuss about the processing of the grown sample to expose the electrical contacts. And finally we describe the process of integration of the device over a base for reading the signal. Completed the production stage, we studied the characteristics of the sample both qualitatively and quantitatively. This study aimed to obtain two pieces of information: a direct comparison between the methods for light coupling, and measuring the efficiency of the detectors produced. At the end of the work we obtained a photodetector produced from its growth till its final assembly. Also we obtained the results of the efficiency of the sample that already indicated possible improvements for future works. If the aim is at the formation of a large-scale production of photodetectors, this study identified areas with a shortage of available techniques and in need of investment.

In semiconductor superlattices, the carrier band structure can be tailored by the proper choice of their geometry. Therefore, superlattices are a model system for the study of coherent high-field transport phenomena in a periodic potential with applied static electric field. This thesis is structured in two parts. I. Zener Tunneling in Semiconductor Superlattices. In this work,semiconductor superlattices with shallow barriers and narrow band gaps were employed to investigate the Zener breakdown. In these samples, tunneling in the electron Wannier-Stark ladder spectrum is addressed as coupling of the electron states of a single bound below-barrier band to the states of the above-barrier spectrum. The field-dependent evolution of the Wannier-Stark ladder states was traced in the optical interband spectrum. Superlattices with different geometries were employed, to clarify the influence of the particular miniband structure on the Zener tunneling behavior. It was shown that in the presence of Zener tunneling, the Wannier-Stark ladder picture becomes invalid. Tunneling is demonstrated to lead to a field-induced delocalization of Wannier-Stark ladder states. In addition, the coherent polarization lifetime was analyzed as a measure of the tunneling probability. II. Terahertz Emission of Exciton Wave Packets in Semiconductor Superlattices. By means of Terahertz spectroscopy, the coherent intraband dynamics of exciton wave packets in biased superlattices after the selective ultrafast excitation of the Wannier-Stark ladder spectrum was investigated. The dynamics of Bloch oscillations was investigated under broadband excitation. It is demonstrated, that the Bloch oscillation amplitude can be controlled by altering the pump pulse energy. The xperimental results can only be explained in a full exciton picture, incorporating bound 1s exciton states and the associated exciton in-plane continuum. The intraband dipole of single Wannier-Stark ladder excitons was measured by detecting the Terhartz response after excitation of the Wannier-Stark ladder with a spectrally narrow rectangular pump pulse. In addition, experiments revealed a previously unknown mechanism for the generation of Bloch oscillating exciton wave packets. This was demonstrated for an incident pump spectrum which was too narrow to excite a superposition of Wannier-Stark ladder states. The effect is based on the sudden, non-adiabatic, change in the net dc internal field due to creation of electron-hole pairs with permanent dipole moments. The non-adiabatic generation of Bloch oscillations is a highly nonlinear effect mediated by strong exciton-exciton interactions.The central role that play exciton-exciton interactions in the intraband dynamics became especially evident when the Wannier-Stark ladder was selectively excited by two spectrally narrow laser lines. The experiments demonstrated a resonant enhancement of the intraband transition matrix element when 1s exciton wavepackets are excited. / In Halbleiter-Übergittern kann die Bandstruktur von Ladungsträgern durch die geeignete Wahl der Geometrie eingestellt werden. Deshalb sind Halbleiter-Übergitter ein Modellsystem für Untersuchungen des kohärenten Ladungstransportes im periodischen Potential bei hohen, statischen, elektrischen Feldern. Diese Doktorarbeit ist in zwei Teile untergliedert. I. Zener-Tunneln in Halbleiter-Übergittern In dieser Arbeit werden Halbleiter-Übergitter mit flachen Barrieren und schmalen Bandlücken eingesetzt, um den Effekt des Zener-Durchbruchs zu untersuchen. In diesen Strukturen wird das Zener-Tunneln im Elektronen-Spektrum der Wannier-Stark-Leiter adressiert. Dabei handelt es sich um die Kopplung von Elektronen-Zuständen eines einzelnen Minibandes unterhalb der Potentialbarriere des Quantentopfes mit Zuständen oberhalb der Barriere. Die Feldabhängigkeit der Wannier-Stark-Leiter-Zustände wurde im optischen Interband-Spektrum detektiert. Übergitter mit unterschiedlichen Geometrien wurden untersucht, um den Einfluss der spezifischen Miniband-Struktur auf die Charakteristiken des Zener-Tunnelns aufzuklären. Es wurde gezeigt, dass im Regime des Zener-Tunnelns das Wannier-Stark-Leiter-Bild nicht mehr gültig ist. Dabei wird demonstriert, dass Tunneln zu einer feldabhängigen Delokalisierung der Wannier-Stark-Leiter-Zustände führt. Außerdem wird die Kohärenz-Lebensdauer der Polarisation analysiert. Sie bildet die Tunneln-Wahrscheinlichkeit ab. II. Terahertz Emission von Exzitonen-Wellen-Paketen in Halbleiter-Übergittern Mit Hilfe von Terahertz-Spektroskopie wurde die kohärente Intraband-Dynamik von Exzitonen-Wellen-Paketen in vorgespannten Halbleiter-Übergittern nach der selektiven, ultrakurzen Anregung des Wannier-Stark-Leiter-Spektrums untersucht. Die Dynamik von Bloch-Oszillatonen wurde durch spektral breitbandiger Anregung detektiert. Es wird gezeigt, dass die Amplitude von Bloch-Oszillationen durch die Änderung der Energie des Anrege-Pulses beeinflusst werden kann. Die experimentellen Resultate können nur in einem ganzheitlichen Exzitonenbild erklärt werden. Es umfaßt die gebundenen 1s-Exziton-Zustände und das zugehörige Exzitonen-Kontinuum in der Quantentopfschicht. Der Intraband-Dipol einzelner Wannier-Stark-Leiter-Exzitonen wurde durch die Detektion der Terahertz-Antwort auf die Anregung der Wannier-Stark-Leiter mit einem spektral schmalen Anrege-Puls vermessen. Außerdem wird in den Experimenten ein zuvor ungekannten Mechanismus der Anregung von bloch-oszillierenden Wellen-Paketen beobachtet. Dieser Effekt wird für ein eingestrahltes Anrege-Spektrum, welches spektral zu schmal für die Anregung einer Überlagerung von Wannier-Stark-Leiter-Zuständen ist, demonstriert. Der Mechanismus basiert auf die unmittelbare, nicht-adiabatische Änderung des effektiven, internen, statischen Feldes auf Grund der Anregung von Elektron-Loch-Paaren mit permanentem Dipolmoment. Die nicht-adiabatische Anregung von Bloch-Oszillationen ist ein hoch nicht-linearer Effekt, der durch starke Exziton-Exziton Wechselwirkung vermittelt wird. Die zentrale Rolle, die die Exziton-Exziton Wechselwirkung in der Intraband-Dynamik spielt, wurde besonders deutlich bei der selektiven Anregung der Wannier-Stark-Leiter durch zwei spekral schmale Laserlinien. Die Experimente demonstrieren eine resonante Überhöhung des Intraband-Übergangs-Matrix-Elements, wenn 1s-Exziton-Wellen-Pakete angeregt werden.

In semiconductor superlattices, the carrier band structure can be tailored by the proper choice of their geometry. Therefore, superlattices are a model system for the study of coherent high-field transport phenomena in a periodic potential with applied static electric field. This thesis is structured in two parts. I. Zener Tunneling in Semiconductor Superlattices. In this work,semiconductor superlattices with shallow barriers and narrow band gaps were employed to investigate the Zener breakdown. In these samples, tunneling in the electron Wannier-Stark ladder spectrum is addressed as coupling of the electron states of a single bound below-barrier band to the states of the above-barrier spectrum. The field-dependent evolution of the Wannier-Stark ladder states was traced in the optical interband spectrum. Superlattices with different geometries were employed, to clarify the influence of the particular miniband structure on the Zener tunneling behavior. It was shown that in the presence of Zener tunneling, the Wannier-Stark ladder picture becomes invalid. Tunneling is demonstrated to lead to a field-induced delocalization of Wannier-Stark ladder states. In addition, the coherent polarization lifetime was analyzed as a measure of the tunneling probability. II. Terahertz Emission of Exciton Wave Packets in Semiconductor Superlattices. By means of Terahertz spectroscopy, the coherent intraband dynamics of exciton wave packets in biased superlattices after the selective ultrafast excitation of the Wannier-Stark ladder spectrum was investigated. The dynamics of Bloch oscillations was investigated under broadband excitation. It is demonstrated, that the Bloch oscillation amplitude can be controlled by altering the pump pulse energy. The xperimental results can only be explained in a full exciton picture, incorporating bound 1s exciton states and the associated exciton in-plane continuum. The intraband dipole of single Wannier-Stark ladder excitons was measured by detecting the Terhartz response after excitation of the Wannier-Stark ladder with a spectrally narrow rectangular pump pulse. In addition, experiments revealed a previously unknown mechanism for the generation of Bloch oscillating exciton wave packets. This was demonstrated for an incident pump spectrum which was too narrow to excite a superposition of Wannier-Stark ladder states. The effect is based on the sudden, non-adiabatic, change in the net dc internal field due to creation of electron-hole pairs with permanent dipole moments. The non-adiabatic generation of Bloch oscillations is a highly nonlinear effect mediated by strong exciton-exciton interactions.The central role that play exciton-exciton interactions in the intraband dynamics became especially evident when the Wannier-Stark ladder was selectively excited by two spectrally narrow laser lines. The experiments demonstrated a resonant enhancement of the intraband transition matrix element when 1s exciton wavepackets are excited. / In Halbleiter-Übergittern kann die Bandstruktur von Ladungsträgern durch die geeignete Wahl der Geometrie eingestellt werden. Deshalb sind Halbleiter-Übergitter ein Modellsystem für Untersuchungen des kohärenten Ladungstransportes im periodischen Potential bei hohen, statischen, elektrischen Feldern. Diese Doktorarbeit ist in zwei Teile untergliedert. I. Zener-Tunneln in Halbleiter-Übergittern In dieser Arbeit werden Halbleiter-Übergitter mit flachen Barrieren und schmalen Bandlücken eingesetzt, um den Effekt des Zener-Durchbruchs zu untersuchen. In diesen Strukturen wird das Zener-Tunneln im Elektronen-Spektrum der Wannier-Stark-Leiter adressiert. Dabei handelt es sich um die Kopplung von Elektronen-Zuständen eines einzelnen Minibandes unterhalb der Potentialbarriere des Quantentopfes mit Zuständen oberhalb der Barriere. Die Feldabhängigkeit der Wannier-Stark-Leiter-Zustände wurde im optischen Interband-Spektrum detektiert. Übergitter mit unterschiedlichen Geometrien wurden untersucht, um den Einfluss der spezifischen Miniband-Struktur auf die Charakteristiken des Zener-Tunnelns aufzuklären. Es wurde gezeigt, dass im Regime des Zener-Tunnelns das Wannier-Stark-Leiter-Bild nicht mehr gültig ist. Dabei wird demonstriert, dass Tunneln zu einer feldabhängigen Delokalisierung der Wannier-Stark-Leiter-Zustände führt. Außerdem wird die Kohärenz-Lebensdauer der Polarisation analysiert. Sie bildet die Tunneln-Wahrscheinlichkeit ab. II. Terahertz Emission von Exzitonen-Wellen-Paketen in Halbleiter-Übergittern Mit Hilfe von Terahertz-Spektroskopie wurde die kohärente Intraband-Dynamik von Exzitonen-Wellen-Paketen in vorgespannten Halbleiter-Übergittern nach der selektiven, ultrakurzen Anregung des Wannier-Stark-Leiter-Spektrums untersucht. Die Dynamik von Bloch-Oszillatonen wurde durch spektral breitbandiger Anregung detektiert. Es wird gezeigt, dass die Amplitude von Bloch-Oszillationen durch die Änderung der Energie des Anrege-Pulses beeinflusst werden kann. Die experimentellen Resultate können nur in einem ganzheitlichen Exzitonenbild erklärt werden. Es umfaßt die gebundenen 1s-Exziton-Zustände und das zugehörige Exzitonen-Kontinuum in der Quantentopfschicht. Der Intraband-Dipol einzelner Wannier-Stark-Leiter-Exzitonen wurde durch die Detektion der Terahertz-Antwort auf die Anregung der Wannier-Stark-Leiter mit einem spektral schmalen Anrege-Puls vermessen. Außerdem wird in den Experimenten ein zuvor ungekannten Mechanismus der Anregung von bloch-oszillierenden Wellen-Paketen beobachtet. Dieser Effekt wird für ein eingestrahltes Anrege-Spektrum, welches spektral zu schmal für die Anregung einer Überlagerung von Wannier-Stark-Leiter-Zuständen ist, demonstriert. Der Mechanismus basiert auf die unmittelbare, nicht-adiabatische Änderung des effektiven, internen, statischen Feldes auf Grund der Anregung von Elektron-Loch-Paaren mit permanentem Dipolmoment. Die nicht-adiabatische Anregung von Bloch-Oszillationen ist ein hoch nicht-linearer Effekt, der durch starke Exziton-Exziton Wechselwirkung vermittelt wird. Die zentrale Rolle, die die Exziton-Exziton Wechselwirkung in der Intraband-Dynamik spielt, wurde besonders deutlich bei der selektiven Anregung der Wannier-Stark-Leiter durch zwei spekral schmale Laserlinien. Die Experimente demonstrieren eine resonante Überhöhung des Intraband-Übergangs-Matrix-Elements, wenn 1s-Exziton-Wellen-Pakete angeregt werden.

La matière dense et tiède (WDM) est un régime caractérisé par une densité proche du solide pour une température avoisinant celle de Fermi. Pour étudier cet état de la matière, dans cette thèse, une expérience d'interférométrie dans le domaine des fréquences est mise en place afin de mesurer la phase et la réflectivité - dans les deux directions de polarisation S et P - d'une onde sonde en réflexion sur un échantillon chauffé de manière très brève par une impulsion laser ultra-courte (sub-100fs). Il est alors porté dans un état hors-équilibre. Une méthode basée sur les mesures de réflectivité est mise en place pour contrôler la forme de l'interface entre le vide et la matière chauffée. Pour des fluences laser de l'ordre de 1 J/cm2, l'hydrodynamique d'un échantillon chauffé est étudiée par la mesure du déplacement de la surface et comparée au code hydrodynamique à deux températures ESTHER. Ensuite, la fonction diélectrique à 800 nm et 400 nm est déduite des mesures expérimentales et certaines quantités en sont extraites comme la densité électronique, la température électronique et les fréquences de collision en régime WDM. Elles sont par la suite comparées avec des modèles couramment utilisés. / The Warm Dense Matter (WDM) regime is characterised by a density close to the solid density and an electron temperature close to the Fermi temperature. In this work, the nonequilibrium Warm Dense Matter is studied during the solid to liquid phase transition induced by an ultra short laser interacting with a solid. A 30 femtoseconds time resolution pump-probe experiment (FDI) is set up, yielding to the measurement of the heated sample complex reflectivity for both S and P polarisation.We have determined a criterion based on the measured reflectivities, which permits to control the interface shape of the probed matter. For pump laser fluences around 1 J/cm2, the hydrodynamics of the heated matter is studied and experimental results are compared to the two-temperatures code ESTHER. Furthermore, the evolution of the dielectric function at 800 nm and 400 nm is inferred from our measurements on a sub-picosecond time-scale. Within the Drude-Lorentz model for the conduction electrons, the dielectric function yields information such as ionisation state, electronic temperature and electron collision frequency.