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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

On the electronic phase diagram of Ba1-xKx(Fe1-yCoy)2As2 and EuFe2(As1-xPx)2 superconductors

Goltz, Til 12 January 2016 (has links) (PDF)
In this thesis, I study the electronic and structural phase diagrams of the superconducting 122 iron pnictides systems Ba1-xKx(Fe1-yCoy)2As2 and EuFe2(As1-xPx)2 by means of the local probe techniques 57Fe Mössbauer spectroscopy (MS) and muon spin relaxation (muSR). For both isovalent substitution strategies - Co/K for Fe/Ba and P for As, respectively - the antiferromagnetic Fe ordering and orthorhombic distortion of the parent compounds BaFe2As2 and EuFe2As2 are subsequently suppressed with increasing chemical substitution and superconductivity arises, once long-range and coherent Fe magnetic order is sufficiently but not entirely suppressed. For Ba1-xKx(Fe1-yCoy)2As2 in the charge compensated state (x/2=y), a remarkably similar suppression of both, the orthorhombic distortion and Fe magnetic ordering, as a function of increasing substitution is observed and a linear relationship between the structural and the magnetic order parameter is found. Superconductivity is evidenced at intermediate substitution with a maximum Tsc of 15 K coexisting with static magnetic order on a microscopic length scale. The appearance of superconductivity within the antiferromagnetic state can by explained by the introduction of disorder due to nonmagnetic impurities to a system with a constant charge carrier density. Within this model, the experimental findings are compatible with the predicted s± pairing symmetry. For EuFe2(As1-xPx)2, the results from 57Fe MS and ZF-muSR reveal an intriguing interplay of the local Eu 2+ magnetic moments and the itinerant magnetic Fe moments due to the competing structures of the iron and europium magnetic subsystems. For the investigated single crystals with x=0.19 and 0.28, 57Fe MS evidences the interplay of Fe and Eu magnetism by the observation of a transferred hyperfine field below Tafm at which the Eu subsystem orders into a canted A-type AFM magnetic structure. Furthermore, an additional temperature dependent out-of-plane tilting of the static Fe hyperfine field is observed below the onset of static Eu ordering. ZF-muSR shows a strong increase of the local field at the muon site below Tafm=20 K and a crossover from isotropic to anisotropic Eu spin-dynamics between 30 and 10 K. The temperature dependence of the spin dynamics, as derived from the muSR dynamic relaxation rates, are related to a critical slowing down of Eu-spin fluctuations which extends to even much higher temperatures (~100 K). They also effect the experimental linewidth observed in the 57Fe MS experiments. The strong influence of the Eu magnetic order onto the primary observables in both methods prevents conclusive interpretation of the experimental data with respect to a putative interplay of Fe magnetism and superconductivity.
2

Direct Measurement of Itinerant Magnetism & Interface States in Semiconductors using Time-varying Magnetic Fields

Choudhury, Aditya N Roy January 2016 (has links) (PDF)
Magnetism in a solid | dia, para, ferro, or of other forms | originates majorly from its electrons; one could, infact, ignore the nuclear contribution. There are two types of electrons in a solid: bound, and free (also called itinerant). It is interesting to note that although several experimental techniques exist that measure the total magnetization/ susceptibility of a solid, no experiment directly probes the individual magnetic contributions from the bound and the itinerant electrons. In the past couple of decades, owing to the advent of sophisticated fabrication facilities, certain man-made, (ferro)magnetic materials have come into existence whose carrier concentrations can be tuned extrinsically: doped semiconductors like DMS (diluted magnetic semiconductors) and hexaborides are two such examples. However, whether the (ferro) magnetism in these materials originate from their itinerant carriers is still an open question. A conclusive answer to this question is eagerly awaited by the scientific community; the answer is not only supposed to solve debates related to the physics of ferromagnetism, but, also, should lend a helping hand in selecting right materials to build devices for upcoming exotic technologies such as Spintronics. A novel experimental technique is proposed in this work that directly measures the itinerant carrier magnetism of a solid. The technique is practically demonstrated on the bulk semiconductor: n-type GaAs. A Landau-Peierls itinerant (dia)magnetic susceptibility as low as 1 10 8 cm 3/mol | which is 10 3 times smaller than the magnetic background stemming from the bound electrons in the GaAs host lattice, and 10 times lower than the sensitivity limit of the SQUID | was clearly, and reproducibly detected from samples having carrier concentrations as low as 5 10 15 cm 3. The technique relies on measurements with MIS capacitors fabricated out of the given semiconductor. Unfortunately, as an artifact, such MIS fabrication processes unintentionally, but unavoidably, introduce certain energy levels in the semiconductor band-gap that unwantedly communicate with its bands by trapping and releasing carriers. Such traps lie along the interface of the semiconductor and the oxide. Though clear signals, which match with theoretically estimated signals within acceptable accuracy, have been measured from the itinerant electrons in GaAs, this work demonstrates theoretical calculations showing that the signals decrease in magnitude owing to the presence of such interface traps. Quantifying this decrement comes as an added advantage of this work, because such measurements can then directly probe the MIS interface and find the concentration of the interface traps (Dit) more accurately and precisely than what is done at present. Thus, the experimental technique this work proposes can also probe a given MIS interface, using time-varying magnetic fields, and reveal a more accurate and precise measure of Dit. Otherwise, the existing techniques for measuring Dit su er from imprecision caused by several theoretical assumptions. A more general technique which can extract Dit accurately and precisely, without needing to know the particular physical model that the interface traps follow for a given MIS capacitor, is what one requires at present, to give CMOS technology the direction and impetus it needs to cross-over to the non-Silicon territory. Such a technique is theoretically developed in this work. How a magnetic field a effects the MIS Energy Band Diagram is also derived in the process. The technique that is developed and demonstrated in this thesis, capable of directly probing both the itinerant magnetism and the MIS interface of a given semiconductor, depends on successfully measuring a very small voltage drop across a MIS capacitor when the latter is externally subjected to a high, time-varying magnetic field. This voltage signal originates because the semiconductor's electronic density of states depends on the magnetic field, thus rendering the semiconductor's electron chemical potential, i.e. the Fermi level, magnetic field dependent. The idea of detecting such magnetic field dependence of electron chemical potential was theoretically proposed more than five decades back, but an experimental detection of the phenomenon, in any bulk (i.e. three dimensional) solid, had remained elusive despite numerous trials. Virtually, the topic had been `dead' for the past couple of decades with very few reports (of trials) getting published on it. The primary reason behind such a failure is an interesting spurious effect that arises and overshadows the signal otherwise coming from the magnetic shift of the electron chemical potential. This is the spurious Hall voltage caused by the time-varying magnetic field and the eddy current it induces in the semiconductor following Faraday's Law of Electromagnetic Induction. Unless this Hall voltage can be reduced below a threshold, there is no hope of successfully measuring the sample signal. In this work, we have discussed about this spurious effect in details and have given experimental recipes to avoid it from interfering with the data. Infact the data we publish for n-GaAs is free from any such spurious effects. From that viewpoint, this work becomes the first to report the experimental detection of the magnetic field dependence of a Fermi level in any bulk solid. A common pulse magnet capable of producing high magnetic field pulses, lasting for only some tens of milliseconds, was built and used for the purpose of this work. For certain samples other than GaAs, however, the spurious Hall voltage may be larger and the proposed technique may fail as one may not be able to rule out the spurious effect with the simple recipe demonstrated here for GaAs. In such a case, measurements are encouraged, instead, in a special magnet uniquely developed to rule out the Hall voltage. This magnet was constructed in-house, and can sit on a table-top and generate magnetic fields as high as a few Teslas that can, further, be `temporally shaped' by the user. Such a class of pulse magnets whose pulse waveforms can be programmed over time are called controlled waveform magnets (CWMs) and the work presented in this thesis also demonstrates the construction and calibration of such a CWM.
3

Theoretical Studies of Epitaxial Bain Paths of Metals

Schönecker, Stephan 12 October 2011 (has links) (PDF)
Epitaxial growth is an important technique for the fabrication of film structures with good crystalline quality, e.g., monoatomic overlayers, multilayers, compound materials, and ordered alloys. Such epitaxially grown films are technologically important materials with, e.g., adjustable electronic, magnetic, and optical properties. In case of coherent or pseudomorphic epitaxy, the overlayer adapts the in-plane lattice parameters of the substrate, i.e., the overlayer is strained to match the lattice parameters parallel to the substrate surface (in-plane directions). Simultaneously, a relaxation of the film dimension perpendicular to the substrate-film interface occurs (out-of-plane direction). Thus, coherent epitaxy provides a method to put phases under strain, and it can stabilise a metastable state of the film material, if the substrate lattice matches this metastable structure. Bulk-like properties in thick overlayers, which adopt the body-centred tetragonal (BCT) crystal structure and which grow coherently on a suitable substrate with quadratic surface symmetry, are modelled by the epitaxial Bain path (EBP) in this thesis. The knowledge of the EBP allows to study properties of the overlayer as function of the substrate lattice parameter. In particular, strain effects on the film material, magnetic order in the overlayer, and the existence of possible metastable states are investigated by means of density functional theory (DFT) in the local spin density approximation (LSDA), and in the singular case of uranium, employing the generalised gradient approximation (GGA). Note that a symmetry property of the BCT structure states, that it is identical to the body-centred cubic (BCC) structure or the face-centred cubic (FCC) structure for definite ratios of the tetragonal lattice parameters. Our definition of the EBP has two, previously not considered consequences for EBPs in general: an EBP can be discontinuous, and the high symmetry cubic structures (FCC and BCC) need not be points on the EBP. Both cases occurred for several elements considered in this thesis. If, however, a cubic structure is a point on the EBP, then a symmetry property guarantees that the total energy along the EBP, E(a), is stationary at this cubic structure. We computed the EBPs of all transition metals (TMs), the post TMs Zn, Cd, and Hg, the alkaline earth metals Ca, Sr, and Ba, the lanthanides La and Lu, and the actinide U (35 elements were treated in total). For each element but Zr, Hg, and U, there are exactly two structures whose energies are minima on the EBP, and which exhibit neither in-plane nor out-of-plane stresses; for Zr, Hg, and U there are three minima each. All other states on the EBP exhibit in-plane stresses because they are a strained form of the stress-free structures. The possibility of metastability of these particular, stress-free structures, i.e., stabilisation of these structures without bonding to the substrate, was investigated by stability conditions based on linear elasticity theory (except for U). We predict that ten FCC structures and three BCT structures not known from the respective phase diagrams may be metastable. We studied the properties of ferromagnetic (FM) states on the EBP for the elements Fe, Co, and Ni, and moreover predict, that Mn, Ru, Os, and U order ferromagnetically for certain states of the EBP. The latter three elements are paramagnetic in their ground states. The onset of ferromagnetism in Os and U is not accompanied by a simultaneously fulfilled Stoner criterion. According to our results, antiferromagnetic order (with moment sequences up-down or up-up-down-down on successive (001) planes) is never more stable than FM order on any EBP for any element investigated. On the basis of our comprehensive results for all TMs, we analysed trends across each of the three TM series and similarities among the three series. We demonstrate, that the type of the EBP (a classification of extrema of E(a) by symmetry into types) follows a characteristic trend across each of the three TM series. We discuss exceptions (Mn, Fe, and Zr) to this trend. Another trend, identical for the three series, is found for the BCT­-FCC structural energy difference as function of the d-band filling (evaluated for BCT structures that define extrema of E(a)), which follows a similar trend as the well studied BCC­-FCC structural energy difference. Clear similarities among the three periods of elements are also reflected in the bulk moduli and in the elastic constants of the cubic or tetragonal structures, that define the global and local minima of E(a). The mentioned similarities suggest, that many properties which are associated with the EBPs of TMs, can be attributed to the occupation of the d-band, which is the most dominant feature of the electronic structure of TMs.
4

On the electronic phase diagram of Ba1-xKx(Fe1-yCoy)2As2 and EuFe2(As1-xPx)2 superconductors: A local probe study using Mössbauer spectroscopy and Muon Spin Relaxation

Goltz, Til 28 October 2015 (has links)
In this thesis, I study the electronic and structural phase diagrams of the superconducting 122 iron pnictides systems Ba1-xKx(Fe1-yCoy)2As2 and EuFe2(As1-xPx)2 by means of the local probe techniques 57Fe Mössbauer spectroscopy (MS) and muon spin relaxation (muSR). For both isovalent substitution strategies - Co/K for Fe/Ba and P for As, respectively - the antiferromagnetic Fe ordering and orthorhombic distortion of the parent compounds BaFe2As2 and EuFe2As2 are subsequently suppressed with increasing chemical substitution and superconductivity arises, once long-range and coherent Fe magnetic order is sufficiently but not entirely suppressed. For Ba1-xKx(Fe1-yCoy)2As2 in the charge compensated state (x/2=y), a remarkably similar suppression of both, the orthorhombic distortion and Fe magnetic ordering, as a function of increasing substitution is observed and a linear relationship between the structural and the magnetic order parameter is found. Superconductivity is evidenced at intermediate substitution with a maximum Tsc of 15 K coexisting with static magnetic order on a microscopic length scale. The appearance of superconductivity within the antiferromagnetic state can by explained by the introduction of disorder due to nonmagnetic impurities to a system with a constant charge carrier density. Within this model, the experimental findings are compatible with the predicted s± pairing symmetry. For EuFe2(As1-xPx)2, the results from 57Fe MS and ZF-muSR reveal an intriguing interplay of the local Eu 2+ magnetic moments and the itinerant magnetic Fe moments due to the competing structures of the iron and europium magnetic subsystems. For the investigated single crystals with x=0.19 and 0.28, 57Fe MS evidences the interplay of Fe and Eu magnetism by the observation of a transferred hyperfine field below Tafm at which the Eu subsystem orders into a canted A-type AFM magnetic structure. Furthermore, an additional temperature dependent out-of-plane tilting of the static Fe hyperfine field is observed below the onset of static Eu ordering. ZF-muSR shows a strong increase of the local field at the muon site below Tafm=20 K and a crossover from isotropic to anisotropic Eu spin-dynamics between 30 and 10 K. The temperature dependence of the spin dynamics, as derived from the muSR dynamic relaxation rates, are related to a critical slowing down of Eu-spin fluctuations which extends to even much higher temperatures (~100 K). They also effect the experimental linewidth observed in the 57Fe MS experiments. The strong influence of the Eu magnetic order onto the primary observables in both methods prevents conclusive interpretation of the experimental data with respect to a putative interplay of Fe magnetism and superconductivity.
5

Theoretical Studies of Epitaxial Bain Paths of Metals

Schönecker, Stephan 23 August 2011 (has links)
Epitaxial growth is an important technique for the fabrication of film structures with good crystalline quality, e.g., monoatomic overlayers, multilayers, compound materials, and ordered alloys. Such epitaxially grown films are technologically important materials with, e.g., adjustable electronic, magnetic, and optical properties. In case of coherent or pseudomorphic epitaxy, the overlayer adapts the in-plane lattice parameters of the substrate, i.e., the overlayer is strained to match the lattice parameters parallel to the substrate surface (in-plane directions). Simultaneously, a relaxation of the film dimension perpendicular to the substrate-film interface occurs (out-of-plane direction). Thus, coherent epitaxy provides a method to put phases under strain, and it can stabilise a metastable state of the film material, if the substrate lattice matches this metastable structure. Bulk-like properties in thick overlayers, which adopt the body-centred tetragonal (BCT) crystal structure and which grow coherently on a suitable substrate with quadratic surface symmetry, are modelled by the epitaxial Bain path (EBP) in this thesis. The knowledge of the EBP allows to study properties of the overlayer as function of the substrate lattice parameter. In particular, strain effects on the film material, magnetic order in the overlayer, and the existence of possible metastable states are investigated by means of density functional theory (DFT) in the local spin density approximation (LSDA), and in the singular case of uranium, employing the generalised gradient approximation (GGA). Note that a symmetry property of the BCT structure states, that it is identical to the body-centred cubic (BCC) structure or the face-centred cubic (FCC) structure for definite ratios of the tetragonal lattice parameters. Our definition of the EBP has two, previously not considered consequences for EBPs in general: an EBP can be discontinuous, and the high symmetry cubic structures (FCC and BCC) need not be points on the EBP. Both cases occurred for several elements considered in this thesis. If, however, a cubic structure is a point on the EBP, then a symmetry property guarantees that the total energy along the EBP, E(a), is stationary at this cubic structure. We computed the EBPs of all transition metals (TMs), the post TMs Zn, Cd, and Hg, the alkaline earth metals Ca, Sr, and Ba, the lanthanides La and Lu, and the actinide U (35 elements were treated in total). For each element but Zr, Hg, and U, there are exactly two structures whose energies are minima on the EBP, and which exhibit neither in-plane nor out-of-plane stresses; for Zr, Hg, and U there are three minima each. All other states on the EBP exhibit in-plane stresses because they are a strained form of the stress-free structures. The possibility of metastability of these particular, stress-free structures, i.e., stabilisation of these structures without bonding to the substrate, was investigated by stability conditions based on linear elasticity theory (except for U). We predict that ten FCC structures and three BCT structures not known from the respective phase diagrams may be metastable. We studied the properties of ferromagnetic (FM) states on the EBP for the elements Fe, Co, and Ni, and moreover predict, that Mn, Ru, Os, and U order ferromagnetically for certain states of the EBP. The latter three elements are paramagnetic in their ground states. The onset of ferromagnetism in Os and U is not accompanied by a simultaneously fulfilled Stoner criterion. According to our results, antiferromagnetic order (with moment sequences up-down or up-up-down-down on successive (001) planes) is never more stable than FM order on any EBP for any element investigated. On the basis of our comprehensive results for all TMs, we analysed trends across each of the three TM series and similarities among the three series. We demonstrate, that the type of the EBP (a classification of extrema of E(a) by symmetry into types) follows a characteristic trend across each of the three TM series. We discuss exceptions (Mn, Fe, and Zr) to this trend. Another trend, identical for the three series, is found for the BCT­-FCC structural energy difference as function of the d-band filling (evaluated for BCT structures that define extrema of E(a)), which follows a similar trend as the well studied BCC­-FCC structural energy difference. Clear similarities among the three periods of elements are also reflected in the bulk moduli and in the elastic constants of the cubic or tetragonal structures, that define the global and local minima of E(a). The mentioned similarities suggest, that many properties which are associated with the EBPs of TMs, can be attributed to the occupation of the d-band, which is the most dominant feature of the electronic structure of TMs.

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