La capacité d’un émetteur radar à assurer la bonne détection des cibles mouvantes sans générer de fausses alertes dépend principalement de sa stabilité pulse à pulse qui est affectée par de nombreux facteurs tels que les effets mécaniques, thermiques et électriques. Cependant, la stabilité pulse à pulse d’un émetteur radar à impulsions est liée à celle de ses amplificateurs de puissance, et plus particulièrement à la technologie des dispositifs actifs. Dans ce sens, ce travail présente une analyse de ce critère radar au plus près du composant (au niveau d’un transistor HEMT GaN) dans le cas d’une rafale radar d’impulsions irrégulières. Un nouveau banc de mesure temporelle d’enveloppe 4-canaux à base de THA a été développé pour les besoins de mesure de stabilité pulse à pulse. Ce système de mesure permet aussi d’extraire la réponse temporelle de courant basse fréquence à des rafales irrégulières d’impulsions RF. Bien que cette configuration ait été initialement développée pour caractériser la spécification critique de la stabilité pulse à pulse pour les applications radar, elle a montré un énorme potentiel pour la modélisation des pièges lors des simulations temporelles d’enveloppe, en complément des différentes techniques de caractérisation des pièges (I-V impulsionnelle, dispersion basse-fréquence de l’admittance de sortie Y22). / The capability of a radar transmitter to ensure clutter rejection depends mainly on its pulse-to-pulse stability, which is affected by many factors such as mechanical, thermal, and electrical effects. However, the P2P stability of a pulsed radar transmitter is linked to that of its power amplifiers, and more specifically on the active device technology. In this context, thiswork presents the analysis of this radar criterion at device level (GaNHEMTtransistor) in the case of a radar burst of RF pulses. A new on-wafer time-domain envelope measurement setup based on a 4-channel THA receiver has been developed to characterize pulse-to-pulse stability and the low-frequency drain current. While this setup was originally developed to characterize the critical specification of pulse-to-pulse stability for radar applications, it demonstrated a great potential for trap modeling in addition to the different characterization techniques of traps (pulsed I-V, low-frequency dispersion of Y22).

Le travail presente dans ce memoire a pour objet principal l'etude des phenomenes de bruit du fond electrique basse frequence dans des transistors pour applications micro-ondes de type effet de champ (HEMT) sur SiGe et GaN ainsi que de type bipolaire a heterojonction (TBH) a base de silicium-germanium (SiGe). Dans un premier chapitre nous rappelons les caracteristiques et proprietes essentielles des sources de bruit en exces que l'on rencontre generalement dans ce type de composants et proposons une description des bancs de mesure de bruit mis en oeuvre. Dans les deuxieme et troisieme chapitres, nous proposons une analyse detaillee de l'evolution du bruit observe en fonction de la frequence, de la polarisation, et de la geometrie sur des HEMTs des deux familles technologiques SiGe et GaN. Nous avons en particulier etudie les deux generateurs de bruit en courant en entree et en sortie respectivement iG et iD ainsi que leur correlation. Ceci nous a permis, en nous appuyant aussi sur l'analyse des caracteristiques statiques des transistors, d'identifier les diverses sources de bruit en exces presentes dans ces composants et de faire des hypotheses sur leurs origines. Le dernier chapitre est consacre aux TBHs a base de SiGe. Dans une premiere partie nous etablissons comment varie le bruit basse frequence de TBHs, fabriques par un premier constructeur, en fonction de la polarisation, de la geometrie et de la fraction molaire de germanium. Dans une seconde partie nous mettons en evidence, d'apres nos observations effectuees sur des TBHs fabriques par un second constructeur, l'impact important sur le bruit BF de stress thermiques appliques sur ce type de composants.

En esta Tesis se ha realizado análisis, diseño y caracterización de los amplificadores de bajoruido y banda ancha en tecnología de GaAs PHEMT con aplicación a los módulos posteriores delradiómetro del instrumento de baja frecuencia del satélite Planck. La Tesis se compone de las siguientes partes:- Introducción y estudio del funcionamiento del radiómetro del instrumento de baja frecuencia de Planck.- Diseño y caracterización de amplificadores de bajo ruido utilizando tecnología de GaAs. Se presentan diseños MMIC en la banda Ka y en la banda Q, y un diseño MIC en la banda Q.- Diseño y construcción de los módulos posteriores en las bandas de 30 y 44 GHz. Se presentan varios prototipos fabricados en ambas bandas, así como medidas de cada uno de los subsistemas que los forman.- Desarrollo de técnicas de medida para receptores de banda ancha con detección directa y su aplicación a la caracterización de los módulos posteriores, mostrando el funcionamiento de los prototipos representativos para las dos bandas de frecuencia.- Integración de los módulos posteriores con los módulos frontales y presentación de algunos de los resultados de medida de los radiómetros completos. / This Thesis deals with the analysis, design and characterization of broadband low noise amplifiersin GaAs PHEMT technology with application to the radiometer Back-End Modules for the Planck Low Frequency Instrument (LFI). The Thesis is composed of the next parts:- Introduction and study about the radiometer of the Planck low frequency instrument.- Design and characterization of low noise amplifiers using GaAs technology. Ka-band MMIC designs and Q-band MMIC and a MIC design are presented.- Design and assembly of the 30 and 44 GHz back-end modules. Several prototypes have been manufactured in both frequency bands and the most representative test results of each subsystem are presented.- Development of measurement techniques for broadband direct detection receivers and their application to the characterization of the back-end modules. Performance of representative prototypes in both frequency bands is included.- Integration of the back end modules and front end modules and significant results of the tests for a radiometer in each frequency band.

No description available.

Les architectures des dispositifs Silicium-Sur-Isolant (SOI) représentent des alternatives attractives par rapport à celles en Si massif grâce à l’amélioration des performances des transistors et des circuits. Dans ce contexte, les plaquettes SOI doivent être d’excellente qualité.Dans cette thèse nous développons des nouveaux outils de caractérisation électrique et des modèles pour des substrats SOI avancés. La caractérisation classique pseudo-MOSFET (-MOSFET) pour le SOI a été revisitée et étendue pour des mesures à basses températures. Les variantes enrichies de -MOSFET, proposées et validées sur des nombreuses géométries, concernent des mesures split C-V et des mesures bruit basse fréquence. A partir des courbes split C-V, une méthode d'extraction de la mobilité effective a été validée. Un modèle expliquant les variations de la capacité avec la fréquence s’accorde bien avec les résultats expérimentaux. Le -MOSFET a été aussi étendu pour les films SOI fortement dopés et un modèle pour l'extraction des paramètres a été élaboré. En outre, nous avons prouvé la possibilité de caractériser des nanofils de SiGe empilés dans des architectures 3D, en utilisant le concept -MOSFET. Finalement, le SOI ultra-mince dans la configuration -MOSFET s'est avéré intéressant pour la détection des nanoparticules d'or. / Silicon-On-Insulator (SOI) device architectures represent attractive alternatives to bulk ones thanks to the improvement of transistors and circuits performances. In this context, the SOI starting material should be of prime quality.In this thesis, we develop novel electrical characterization tools and models for advanced SOI substrates. The classical pseudo-MOSFET (-MOSFET) characterization for SOI was revisited and extended to low temperatures. Enriched variants of -MOSFET, proposed and demonstrated on numerous geometries, concern split C-V and low-frequency noise measurements. Based on split C-V, an extraction method for the effective mobility was validated. A model explaining the capacitance variations with the frequency shows good agreement with the experimental results. The -MOSFET was also extended to highly doped SOI films and a model for parameter extraction was derived. Furthermore, we proved the possibility to characterize SiGe nanowire 3D stacks using the -MOSFET concept. Finally thin film -MOSFET proved to be an interesting, technology-light detector for gold nanoparticles.

Les substrats Silicium-sur-Isolant (SOI) représentent la meilleure solution pour obtenir des dispositifs microélectroniques ayant de hautes performances. Des méthodes de caractérisation électrique sont nécessaires pour contrôler la qualité SOI avant la réalisation complète de transistors. La configuration classique utilisée pour les mesures du SOI est le pseudo-MOFSET. Dans cette thèse, nous nous concentrons sur l'amélioration des techniques autour du Ψ-MOFSET, pour la caractérisation des plaques SOI et III-V. Le protocole expérimental de mesures statiques ID-VG a été amélioré par l'utilisation d'un contact par le vide en face arrière, permettant ainsi d'augmenter la stabilité des mesures. De plus, il a été prouvé que ce contact est essentiel pour obtenir des valeurs correctes de capacité avec les méthodes split-CV et quasi-statique. L'extraction des valeurs de Dit avec split-CV a été explorée, et un model physique nous a permis de démontrer que ceci n'est pas possible pour des échantillons SOI typiquement utilisés, à cause de la constante de temps reliée à la formation du canal. Cette limitation a été résolue un effectuant des mesures de capacité quasi-statique (QSCV). La signature des Dit a été mise en évidence expérimentalement et expliquée physiquement. Dans le cas d'échantillons passivés, les mesures QSCV sont plus sensibles à l'interface silicium-BOX. Pour les échantillons non passivés, un grand pic dû à des défauts d'interface apparait pour des valeurs d'énergie bien identifiées et correspondant aux défauts à l'interface film de silicium-oxyde natif. Nous présentons des mesures de bruit à basses fréquences, ainsi qu'un model physique démontrant que le signal émerge de régions localisées autour des contacts source et drain. / Silicon-on-insulator (SOI) substrates represent the best solution to achieve high performance devices. Electrical characterization methods are required to monitor the material quality before full transistor fabrication. The classical configuration used for SOI measurements is the pseudo-MOSFET. In this thesis, we focused on the enrichment of techniques in Ψ-MOSFET for the characterization of bare SOI and III-V wafers. The experimental setup for static ID-VG was improved using a vacuum contact for the back gate, increasing the measurement stability. Furthermore, this contact proved to be critical for achieving correct capacitance values with split-CV and quasi-static techniques (QSCV). We addressed the possibility to extract Dit values from split-CV and we demonstrated by modeling that it is impossible in typical sized SOI samples because of the time constant associated to the channel formation. The limitation was solved performing QSCV measurements. Dit signature was experimentally evidenced and physically described. Several SOI structures (thick and ultra-thin silicon films and BOX) were characterized. In case of passivated samples, the QSCV is mostly sensitive to the silicon film-BOX interface. In non-passivated wafers, a large defect related peak appears at constant energy value, independently of the film thickness; it is associated to the native oxide present on the silicon surface. For low-frequency noise measurements, a physical model proved that the signal arises from localized regions surrounding the source and drain contacts.

The main object of this work is noise spectroscopy of CdTe radiation detectors (-rays and X–rays) and CdTe samples. The study of stochastic phenomenon and tracing redundant low-frequency noise in semiconductor materials require long-term measurements in time domain and evaluate suitable power spectral densities (PSD) with logarithmic divided frequency axes. We have used the means of time-frequency analysis derived from the discrete wavelet transform (DWT) and we have designed the effective algorithm for PSD estimation, which is comparable with an original analog method. CdTe single crystal with Au contacts we can imagine as a series connection of two Schottky diodes with a resistor between them. The bulk resistance at constant temperature and other constant parameters changes due to the carrier concentration changing only. The p-type CdTe sample shows metal behavior with every temperature changes. Semiconductor properties of the sample begin to dominate just after some period of time. This behavior is caused by the hole mobility changing. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. All the studied samples have very high value of low frequency noise, much higher than it should have been according to Hooge’s formula. The excess value of low frequency noise is caused by the low carrier concentration within the depleted region.

This thesis describes a novel method to reversibly and safely block nerve conduction using a low frequency alternating current (LFAC) waveform at 1 Hz applied through a bipolar extrafascicular electrode. This work follows up on observations made on excised mammalian peripheral nerves and earthworm nerve cords. An<i> in-situ</i> electrophysiology setup was used to assess the LFAC<br>waveform on propagating action potentials (APs) within the cervical vagus nerve in anaesthetized Sprague-Dawley rats (n = 12). Two sets of bipolar cuff or hook electrodes were applied unilaterally to the cervical vagus nerve, which was crushed rostral to the electrodes to exclude reflex effects<br>on the animal. Pulse stimulation was applied to the rostral electrode, while the LFAC conditioning waveform was applied to the caudal electrode. The efferent volley, if unblocked, elicits acute bradycardia and hypotension. The degree of block of the vagal stimulation induced bradycardia<br>was used as a biomarker. Block was assessed by the ability to reduce the bradycardic drive by monitoring the heart rate (HR) and blood pressure (BP) during LFAC alone, LFAC with vagal stimulation, and vagal stimulation alone. LFAC applied via a hook electrode (n = 7) achieved 86.6 +/- 11% block at current levels 95 +/- 38 uAp (current to peak). When applied via a cuff electrode (n = 5) 85.3 +/- 4.60% block was achieved using current levels of 110 +/- 65 uAp. Furthermore, LFAC was explored on larger vagal afferent fibers in larger human sized nerve bundles projecting to effects mediated by a reflex. The effectiveness of LFAC was assessed in an <i>in-situ</i> electrophysiological setup on the left cervical vagus in anaesthetized domestic swine (n = 5). Two bipolar cuff electrodes were applied unilaterally to the cervical vagus nerve, which was crushed caudal to the electrodes to eliminate cardiac effects. A tripolar extrafascicular cuff electrode was placed most rostral on the nerve for recording of propagating APs induced by<br>electrical stimulation and blocked via the LFAC waveform.<br>Standard pulse stimulation was applied to the left cervical vagus to induce the Hering-Breuer reflex. If unblocked, the activation of the Hering-Breuer reflex would cause breathing to slow down and potentially cease. Block was quantified by the ability to reduce the effect of the Hering-Breuer<br>reflex by monitoring the breathing rate during LFAC alone, LFAC and vagal stimulation, and vagal stimulation alone. LFAC achieved 87.2 +/- 8.8% (n = 5) block at current levels of 0.8 +/- 0.3 mAp. Compound nerve action potentials (CNAP) were monitored directly. They show changes<br>in nerve activity during LFAC, which manifests itself as the slowing and amplitude reduction of components of the CNAPs. Since the waveform is balanced, all forward reactions are reversed, leading to a blocking method that is similar in nature to DC block without the potential issues of<br>toxic byproduct production. These results suggest that LFAC can achieve a high degree of nerve block in both small and large nerve bundles, resulting in the change in behavior of a biomarker, <i>in-vivo </i>in the mammalian nervous system at low amplitudes of electrical stimulation that are within the water window of the electrode.<br>

Research has shown that the extent of students' vocabulary in the language of learning and teaching, as an important component of overall language proficiency, plays a crucial role in reading and academic success, whether students are studying through their mother tongue or not. This study compares the vocabulary size of Grade 7 English second language immersion students with that of their English mother tongue classmates, focusing primarily on receptive vocabulary. Two aspects of immersion that South African children may experience are identified: length and quality. It is assumed that the longer the immersion, and the richer the immersion environment, the more positive the effect on vocabulary size will be. Overall results suggest that length has a slightly stronger effect on receptive vocabulary size than quality, though both are generally positive, and that most immersion students are beginning to develop a basic receptive vocabulary size comparable with that of their English mother tongue peers. / Linguistics and Modern Languages / (M.A. (Linguistics))

This thesis deals with the properties of soundproof partition structures in the low-frequency sound at impact sound insulation and security of acoustic comfort inside buildings. The prediction of impact sound is a simulation laboratory measurements of impact sound. The work is based on the occurrence of frequent complaints of inhabitants of residential homes for subjectively poor impact sound insulation of horizontal dividing structures, whose top layer is formed laminate. Although these structures conform in terms of impact sound insulation in accordance with the requirements of CSN 73 0532: 2010, residents complain about the subjective perception of the sounds of lower frequencies. A noise with a distinctive character of sound at low frequencies has been proved by measuring the spectral analysis and evaluation of sound pressure levels caused by the movement of persons roof construction to the floor. On the measurement and evaluation carried out in accordance with the measurement and evaluation of noise in non-working environment can be related requirement under the Regulation No. 272/2011 Coll. "On the protection of health from the adverse effects of noise and vibration." Occupational noise limits for protected buildings interior space do not apply to noise from ordinary use of the apartment. Under current legislation, the problem is in the Czech Republic at present insoluble. Therefore, this work explores ways evaluation of impact sound and delivery is determined conclusions. With the low-frequency impact sound insulation is also related to the latter part of this dissertation, where the computing program ANSYS (version 14.0) is simulated laboratory measurements of impact sound insulation of the real structure. The paper presents the results of simulation, and the sound pressure level in the receiving room to třetinooktávového band 630 Hz. These results are compared with measured values modeled in the laboratory.