When studying the novel Les Années by the novelist Annie Ernaux we have chosen to have acloser look upon the translation of the novel to Swedish following the strategies of translationelaborated by Brynja Svane. These strategies are based on the study of cultural expressions. Ascultural expressions we have chosen those expressions which are typical for the world situationand for the daily life during this period of time, that is 70 between 1940 and 2008. We want tofind out whether these strategies can help the translator to convey the message of the novel. Thethree most often used strategies are addition, transfer with explanation and semantic adaption.Sometimes the translation needs to add words to dramatize the text in a way that is easily donein a few words in the source language. Finally, we find that using a lot of words sometimesmake the translated text a bit heavy and clumsy, which might hide and weaken the message ofthe novel

Static Random Access Memory (SRAM) cells in ultra-low power Integrated Circuits (ICs) based on nanoscale Complementary Metal Oxide Semiconductor (CMOS) devices are likely to be the most vulnerable to large-scale soft errors. Conventional error correction circuits may not be able to handle the distributed nature of such errors and are susceptible to soft errors themselves. In this thesis, a distributed error correction circuit called Self-Healing Cellular Automata (SHCA) that can repair itself is presented. A possible way to deploy a SHCA in a system of SRAM-based embedded program memories (ePM) for one type of chip multi-processors is also discussed. The SHCA is compared with conventional error correction approaches and its strengths and limitations are analyzed.

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Flashbulb memories are formed through widely shared events that have affected the culture and community. The “flash” in flashbulb memories refers to the specific details that individuals have developed in their memories. The presented research focuses on the specific event of college students at the University of Central Florida (UCF) hearing about university closure due to the COVID-19 pandemic. This research study sought to identify the variables that have affected the accuracy of flashbulb memories formation regarding the event of college students hearing about university closure because of the pandemic. The variables of the students’ relevance to the university, location, source of hearing about the university’s closure, and political group they belong to were investigated to determine if they affected the accuracy of the memories that were developed. An online survey was sent to students inquiring about the specifics and details that they remembered when finding out that the university was closed and was going to move to remote instruction. Participants included 226 college students who filled out the survey between February 3, 2021, and July 21, 2021. The survey included questions regarding the experiences of students when they learned about COVID-19 and university closure. Data revealed that a greater relevance to the event can cause a greater amount of rehearsal and recall of memories. The rehearsal and recall of memories are crucial variables to developing accurate flashbulb memories. This study contributes to the lack of research in flashbulb memories associated with pandemics. The study will be an addition to determining variables that have affected the accuracy of flashbulb memories.

3-dimensional integration has become a standard to further increase the transistor density and to enhance the integrated functionality in microchips. Integrated circuits are stacked on top of each other and copper-filled through-silicon VIAs (TSVs) are the industry-accepted choice for their vertical electrical connection. The aim of this work is to functionalize the TSVs by implementing vertical field-effect transistors inside the via holes. The front and back sides of 200 ... 300 µm thin silicon wafers were doped to create the source/drain regions of n- and p-FETs. The TSVFETs showed very stable saturation currents and on/off current ratios of about 10^6 (n-TSVFET) and 10^3 (p-TSVFET) for a gate voltage magnitude of 4V. The use of hafnium zirconium oxide on a thin SiO_2 interface layer as gate dielectric material in a p-TSVFET, enabled the implementation of a charge trapping memory inside the TSVs, showing a memory window of about 1V. This allows the non-volatile storage of the transistor on/off state. In addition, the demonstration of the use of gallium as the source/drain dopant in planar p-FET test structures (ion implanted from a focused ion beam tool) paves the way for maskless doping and for a process flow with a low thermal budget. It was shown, that ion implanted gallium can be activated and annealed at relatively low temperatures of 500 °C ... 700 °C.:Abstract / Kurzzusammenfassung Danksagung Index I List of Figures III List of Tables X List of Symbols XI List of Abbreviations XV 1 Introduction 1 2 Fundamentals 5 2.1 Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) 5 2.1.1 Historical Development - Technological Advancements 7 2.1.2 Field-Effect Transistors in Semiconductor Memories 10 2.2 3D Integration and the Use of TSVs (Through Silicon VIAs) 16 2.3 Doping of Silicon 19 2.3.1 Doping by Thermal Diffusion 20 2.3.2 Doping by Ion Implantation 22 3 Electrical Characterization 24 3.1 Resistivity Measurements 24 3.1.1 Resistance Determination by Four-Point Probes Measurement 24 3.1.2 Contact Resistivity 27 3.1.3 Doping Concentration 32 3.2 C-V Measurements 35 3.2.1 Fundamentals of MIS C-V Measurements 35 3.2.2 Interpretation of C-V Measurements 37 3.3 Transistor Measurements 41 3.3.1 Output Characteristics (I_D-V_D) 41 3.3.2 Transfer Characteristics (I_D-V_G) 42 4 TSV Transistor 45 4.1 Idea and Motivation 45 4.2 Design and Layout of the TSV Transistor 47 4.2.1 Design of the TSV Transistor Structures 47 4.2.2 Test Structures for Planar FETs 48 5 Variations in the Integration Scheme of the TSV Transistor 51 5.1 Doping by Diffusion from Thin Films 51 5.1.1 Determination of Doping Profiles 52 5.1.2 n- and p- TSVFETs Doped Manufactures by the Use of the Diffusion Technique 59 5.2 Ferroelectric Hafnium-Zirconium-Oxide (HZO) in the Gate Stack 81 5.2.1 Planar ferroelectric p-MOSFETs Doped by Thermal Diffusion 82 5.2.2 p-TSVFETs with Hafnium-Zirconium-Oxide Metal Gate 90 5.3 Doping by Ion Implantation of Gallium with a Focused Ion Beam (FIB) Tool 96 5.3.1 Ga doped Si Diodes 97 5.3.2 Planar p-MOSFETs Doped by Ga Implantation 108 5.3.3 Proposal for a parallel integration of Cu TSVs and p-TSVFETs 117 6 Summary and Outlook 120 Bibliography XVIII A Appendix XXXVI A.1 Resistivity and Dopant Density XXXVI A.2 Mask set for the TSVFET XXXVII A.3 Mask Design of the Planar Test Structures XXXVIII Curriculum Vitae XXXIX List of Scientific Publications XLI

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This research explores the world of material belongings of Muslim Syrian newcomer/refugee families as they establish themselves in Canada since 2015. The study centers the cultural and emotional meanings of the material belongings by looking at both those that are brought with the newcomers and those that are left behind. It aims to shed light on how these objects hold memories and connect refugees to their cultural and personal histories while also examining the role of displacement in this context. Additionally, it investigates the different perspectives between generations by looking into how the value and meaning of belongings may alter between older and younger family members. The key questions of the study develop at the intersection of material culture and forced migration. It first examines whether material belongings hold a significant place in the everyday lives of refugees and how this reflects on their memories. Secondly, it considers if migration and the experience that comes with it alters refugees’ attachments to their material belongings and leads to changing their sentimental value over time. Thirdly, it evaluates whether the decision-making process behind what refugees choose to bring with them and what they decide to leave behind is affected under distressing circumstances. Methodologically, the study offers an alternative ethnographic approach by braiding migrant narratives with object biographies, shifting the subject of the narrative toward a demonstration of the interrelationships of persons and things. / Thesis / Master of Arts (MA)

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The general concept of communication for development is that it explores the use of communication – both as a tool and as a way of expressing processes of social change. Artcan be regarded as a way of communication, and to use the arts in the field of communication for development is not new. Art as a force in social change has a long history.The purpose of this thesis is to take a closer look at the art project To Reveal, Remember and Expose and make an exploration of how or if an art project can facilitate new awareness,primarily around memories, heritage, identity and social change among project participantsand city inhabitants encountered by the project. The objectives of this thesis are to investigate the following questions: What kind of awareness will the participants get out of the project? Can the project create a new awareness in terms of memory and heritage? How does the project connect and relate to culture, identity and city space?Communication theory, concepts of culture and representation, identity and space in the formof private and public space are presented. Performance art and theory, art intervention, sitespecific art and tactical media are elaborated upon. The primary methodology used isparticipatory observation, which has been applied on the planning, actions and discussions ofthe project. An interview with the artist behind the project and a structural content analysis oftexts written by the students that participated in the art project will complement theparticipatory observation.The analysis of the project showed that the project could create awareness among itsparticipants, especially about people, time and space. The actions also gave some insight and awareness concerning memories and heritage of some objects and places. The projectconnected and related to culture, identity and space in different ways. There were similaritiesto tactical media as it create situations were criticality could occur, but it was hard to see awhole picture of the outcome as it was not possible to know what the “audience” thought. Alltopics are relevant in communication and development and social change, but the thesis wasnot able to show that the project could give access to ways of expressing processes of socialchange. For further research it is of relevance to consider the magnitude of social change anart project can bring, and take into consideration that social change usually take time and ishard to find in a short period of time.

This thesis explores how traumatic memories of the Tangshan earthquake have been constructed in literature, documentary works, and films. Through analyzing the narrative construction of the Tangshan earthquake in the form of film and literature, this thesis studies the relationship between state power and individual agency in the representation of this natural disaster. It argues that the cultural representation of this natural disaster reflects a subtle shift: one from the dominant nationalistic narrative to the narrative centering on individuals’ psychological trauma. It suggests the high degree of state control and politicization is what is similar between a natural disaster such as the Tangshan earthquake and other political events. To some extent, the Tangshan earthquake has become a political event to promote the Chinese Communist Party’s (CCP) propaganda. Therefore, this thesis engages existing scholarship on political traumas to research the Tangshan earthquake. It is indicating a subtle shift because it is a slow-changing process and there is no mark to signal a radical departure from the earlier nationalism accounts. There also exists more interlaces and interconnections between the state and individual in the range of sources I have examined. And the overlay of the different narratives reflects the complexity of reality and history.