Solar Photovoltaics (PV) is one of the most promising renewable energy technologies for mitigating the effect of climate change. Reliability of PV modules directly impacts the Levelized Cost of Energy (LCOE), which is a metric for cost competitiveness of any energy technology. Further reduction in LCOE of PV through assured long term reliability is necessary in order to facilitate widespread use of solar energy without the need for subsidies. This dissertation is focused on frameworks for assessing reliability of bypass diodes in PV modules. Bypass diodes are critical components in PV modules that provide protection against shading. Failure of bypass diode in short circuit results in reducing the PV module power by one third, while diode failure in open circuit leaves the module susceptible for extreme hotspot heating and potentially fire hazard. PV modules, along with the bypass diodes are expected to last at least 25 years in field. The various failure mechanisms in bypass diodes such as thermal runaway, high temperature forward bias operation and thermal cycling are discussed. Operation of bypass diode under shading is modeled and method for calculating the module I-V curve under any shading scenario is presented. Frameworks for estimating the diode temperature in field deployed modules based on Typical Meteorological Year (TMY) data are developed. Model for predicting the susceptibility of bypass diodes for thermal runaway is presented. Diode wear out due to High Temperature Forward Bias (HTFB) operation and Thermal Cycling (TC) is studied under custom designed accelerated tests. Overall, this dissertation is an effort towards estimating the lifetime of bypass diodes in field deployed modules, and therefore, reducing the uncertainty in long term reliability of PV modules.

Thèse numérisée par la Direction des bibliothèques de l'Université de Montréal.

Medium-voltage silicon carbide power devices, due to their higher operational temperature, higher blocking voltage, and faster switching speed, promise transformative possibilities for power electronics in grid-tied applications, thereby fostering a more sustainable, resilient, and reliable electric grid. The pursuit of increasing power density, however, escalates the blocking voltage and shrinks the module size, consequently posing unique insulation challenges for the medium voltage power module packaging. The state-of-the-art solutions, such as altering the geometry of the insulated-metal-substrates or thickening or stacking them, exhibit limited efficacy, inflate manufacturing costs, raise reliability concerns, and increase thermal resistance. This dissertation explores a material-based approach that utilizes a nonlinear resistive polymer nanocomposite field-grading coating to enhance insulation performance without compromising thermal performance for medium-voltage power modules. The studied polymer nanocomposite is a mutual effort of this research and NBE Technologies. Instead of using field-grading materials as encapsulation, a thin film coating (about 20 μm) can be achieved by painting the polymer nanocomposite solution to the critical regions to grade the electric field and extend the range of the applicability of the bulk encapsulation. A polymer nanocomposite's electrical properties were characterized and found theoretically and experimentally to be effective in improving the insulation performance or increasing the partial discharge inception voltage, of direct-bonded-copper substrates for medium-voltage power modules. By applying the polymer nanocomposite coating on the direct-bonded- copper triple-point edges, the partial discharge inception voltages of a wide range of direct-bonded-coppers increased by 50-100%. To assure its effectiveness for heated power modules during operation, this field-grading effect was then evaluated at elevated temperatures up to 200°C and found almost unchanged. The nanocomposite's long-term efficacy was further corroborated by voltage endurance tests. Building on these promising characterizations, functional power modules were designed, fabricated, and tested, employing the latest packaging techniques, including double-sided cooling and silver-sintering. Prototypes of 10-kV and 20-kV silicon carbide diode modules confirmed the practicality and efficacy of the polymer nanocomposite. The insulation enhancements observed at the module level mirrored those at the substrate level. Moreover, the polymer nanocomposite coating enabled modules to use insulated-metal-substrates with at least 100% thinner ceramic, resulting in a reduction of at least 30% in the junction-to-case thermal resistance of the module. Subsequently, to test the nanocomposite's performance during fast-switching transients (> 300 V/ns), 15-kV silicon carbide MOSFET modules were designed, fabricated, and evaluated. These more complex modules passed blocking tests, partial discharge tests, and double-pulse tests, further validating the feasibility of the nonlinear resistive polymer nanocomposite field-grading for medium-voltage power modules. In summary, this dissertation presents a comprehensive evaluation of a nonlinear resistive polymer nanocomposite field-grading coating for medium-voltage power modules. The insights and demonstrations provided in this work bring the widespread adoption of this packaging concept for medium-voltage power modules significantly closer to realization. / Doctor of Philosophy / This dissertation delves into a novel approach to improving the resilience and reliability of our electric grid by employing medium-voltage silicon carbide power devices. These power devices, due to their superior performance at higher temperatures and faster switching speeds, can revolutionize grid-tied power electronics. However, the challenge lies in safely packaging these devices, given their high blocking voltage and compact size. To address this, the study explores an innovative solution that uses a material called a nonlinear resistive polymer nanocomposite. This nanocomposite can improve insulation and endure high temperatures, promising a significant boost in performance for these power devices. The study reveals that applying this nanocomposite coating to the edges of direct- bonded-copper, a component of the power module, can enhance the insulation performance by 50-100%. Building on these findings, we designed, made, and tested functional power modules, using cutting-edge packaging techniques that we developed. The tests confirmed the practicality and effectiveness of the polymer nanocomposite, leading to insulation improvements on both the substrate and module levels. Importantly, this coating also reduced the thermal resistance of the module by at least 30%, signifying a more efficient operation. Then we evaluated the nanocomposite's performance during fast-switching transients in more complex silicon carbide modules. The modules passed multiple tests, further validating the feasibility of the nanocomposite coating for medium-voltage power modules. In essence, this dissertation uncovers a promising approach to more efficient and resilient power module packaging, paving the way for potential widespread adoption in the power electronics industry.

Three growing power electronics applications have massive requirements for properly operating their medium-voltage and high-voltage systems: electric transportation, renewable energy, and the power grid. Their needs include dense power systems with higher efficiency and higher voltage and current devices. This requires devices with higher switching frequencies to lower the size of the passives in the converter and devices that can withstand higher operating temperatures as components move closer together to improve power densities. Devices that achieve higher switching speeds and lower specific on-state resistances also reduce losses. Wide bandgap devices (WBG) like silicon carbide (SiC) have a higher bandgap, higher electric field strength, higher thermal conductivity, and lower carrier concentration than silicon (Si). This allows for higher temperature operation, faster switching, higher voltage blocking, and lower power losses, directly meeting the requirements of the previously noted applications. However, the current packaging schemes are limiting the ability of SiC to operate in these applications by applying packaging schemes used for Si. Therefore, it is critical to use and refine advanced packaging techniques so that WBG devices can better operate and meet the growing demands of these power electronic applications. Low-inductance, wirebond-less, high-density, scalable modules are possible due to advanced packaging methods. While beneficial to the operation and design, these techniques introduce new challenges to the fabrication process. This requires refinement to improve the yield of sandwich-structure modules with wirebond-less interconnects. For this module, encapsulated, silver-sintered substrates reduce the peak electric field within the package, improving the partial discharge inception voltage to meet insulation requirements. It is essential to have a uniform bondline between the substrates to achieve all bond connections and improve reliability. Silver sintering is also used to attach the molybdenum (Mo) post interconnects. These interconnects allow for sandwich-structure modules with low inductances; however, they have tolerance variation from manufacturing and bondline thicknesses, which become problematic for multi-chip power modules with an increased number of die and posts. The variation results in tilt, causing some posts to disconnect altogether. Additionally, soldering MCPMs involves a large thermal mass that the soldering reflow profile from a datasheet does not account for. Ultimately, these fabrication concerns can result in misalignment or disconnected post interconnects to the top substrate. Post interconnect planarity and alignment are vital for this multi-chip power module to avoid open or shorted connections that can derate switch positions. This thesis aims to refine each packaging step in assembling a wirebond-less, multi-chip power module. The bond uniformity of silver (Ag) sintering is addressed in dried preform and wet paste cases. The soldering methods are explored and improved by creating a modified reflow profile for large thermal masses and introducing pressure to reduce bondline variation and voiding content. The entire sandwich structure module is analyzed in a statistical tolerance analysis to understand which component introduces the most variation and height mismatch, providing insight as to which packaging techniques need further control to improve the yield of multi-chip power modules. / Master of Science / The electrification of many systems worldwide has increased the need for compact, efficient power electronics. Their applications span electric transportation, renewable energy systems, grid applications, and data centers, to name a few medium-voltage applications. Wide bandgap (WBG) semiconductors can outperform silicon in these applications, offering higher temperature robustness, higher efficiency performance, and higher voltage capabilities. The faster switching will reduce the size and weight of the converters containing these devices. However, using typical packaging schemes such as wirebonds will limit the potential of WBG devices in these applications. Advanced packaging techniques have been developed to increase the electric field strength, reduce the power loop inductances, reduce electromagnetic interference from fast-switching transients, and improve the power densities of multi-chip power modules for medium voltage and current applications. However, these packaging techniques are not trivial to implement and have resulted in a low yield of these modules. This thesis aims to refine each packaging step in assembling a wirebond-less, multi-chip power module. The bond uniformity of silver sintering is addressed in cases of dried preform and wet paste. The soldering methods are explored and improved by creating a modified reflow profile for large thermal masses and introducing pressure to reduce bondline variation and voiding content. The entire sandwich structure module is analyzed in a statistical tolerance analysis to understand which component introduces the most variation and height mismatch, providing insight as to which packaging techniques need further control to improve the yield of multi-chip power modules.

Silver sintering technology has received considerable attention in recent years because it has the potential to be a suitable interconnection material for high-temperature power electronic packaging, such as high melting temperature, high electrical/thermal conductivity, and excellent mechanical reliability. It should be noted, however, that pressure (usually between three to five MPa) was added during the sintering stage for attaching power chips with area larger than 100 mm2. This extra pressure increased the complexity of the sintering process. The maximum chip size processed by pressure-free sintering, in the published resources, was 6 x 6 mm2. One objective of this work was to achieve chip-attachment with area of 13.5 x 13.5 mm2 (a chip size of one kind of commercial IGBT) by pressure-free sintering of nano-silver paste. Another objective was to fabricate high-power (1200 V and 150 A) multi-chip module by pressure-free sintering. In each module (half-bridge), two IGBT dies (13.5 x 13.5 mm2) and two diode dies (10 x 10 mm2) were attached to a DBC substrate. Modules with solder joints (SN100C) and pressure-sintered silver joints were also fabricated as the control group. The peak temperature in the process of of pressure-free sintering of silver was around 260oC, whereas 270oC for vacuum reflowing of solder, and 280oC under three MPa for pressure-sintering of silver. The process for wire bonding, lead-frame attachment, and thermocouple attachment are also recorded. Modules with the above three kinds of joints were first characterized by electrical methods. All of them could block 1200 V DC voltage after packaging, which is the voltage rating of bare dies. Modules were also tested up to the rated current (150 A) and half of the rated voltage (600 V), which were the test conditions in the datasheet for commercial modules with the same voltage and current ratings. I-V characteristics of packaged devices were similar (on-resistance less than 0.5 mohm). All switching waveforms at transient stage (both turn-on and turn-off) were clean. Six switching parameters (turn-on delay, rise time, turn-off delay, fall time, turn-on loss, and turn-off loss) were measured, which were also similar (<9%) among different kinds of modules. The results from electrical characterizations showed that both static characterizations and double-pulse test cannot be used for evaluating the differences among chip-attach layers. All modules were also characterized by their thermal performances. Transient thermal impedances were measured by gate-emitter signals. Two setups for thermal impedance measurement were used. In one setup, the bottoms of modules were left in the air, and in the other setup, bottoms of modules were attached to a chiller (liquid cooling and temperature controlled at 25oC) with thermal grease. Thermal impedances of three kinds of modules still increased after 40 seconds for the testing without chiller, since the thermal resistance of heat convection from bottom copper to the air was included , which was much larger than the sum of the previous layers (from IGBT junction, through the chip-attach layer, to the bottom of DBC substrate). In contrast, thermal impedances became almost stable (less than 3%) after 15 seconds for all modules when the chiller was used. Among these three kinds of modules, the module with pressure sintered joints had the lowest thermal impedance and the thermal resistance (tested with the chiller) around 0.609oK/W, In contrast, the thermal resistance was around 964oK /W for the soldered module, and 2.30oK /W for pressure-free sintered module. In summary, pressure-free large-area sintered joints were achieved and passed the fabrication process for IGBT half-bridge module with wiring bonding. Packaged devices with these kinds of joints were verified with good electrical performance. However, thermal performances of pressure-free joints were worse than solder joints and pressure-sintered joints. / Master of Science

The automotive sector finds itself undergoing a significant and substantial transformation, propelled by the pronounced proliferation of electric vehicles (EVs) and autonomous driving technologies. As the industry proactively adapts to embrace this, an increasingly pressing demand becomes evident for higher performance, reliability, sustainability, and speed. Semiconductor packages emerge as primary catalysts within this ongoing revolution, positioned squarely at the forefront to assume a critical and indispensable function in facilitating the realization of these fundamental objectives. Commercial vehicle manufacturers are taking steps to respond to these demands for sustainability and speed, the driving force in facilitating this being the shift from Si IGBTs to SiC MOSFETs. Silicon Carbide is an increasingly popular choice in inverter module fabrication for electric vehicle applications owing to its inherent characteristics such as reduced on resistance, higher blocking voltage, and higher temperature stability that enable high power density, increased efficiency, and speeds. This work focuses on developing and fabricating a high-density 1.7 kV, 300 A SiC MOSFET half-bridge power module tailored for a 280-320 kW, 2-level inverter configuration. Co-designed with the busbar and gate driver, the custom power module stresses efficient heat dissipation, minimized parasitic inductance, and a compact footprint. Key target parameters to achieve optimal performance include a Rdson below 20 mΩ, Rthjc under 0.2 K/W and a switching time below 20 ns. The proposed module features a double-sided cooling sandwiched structure, an integrated thermistor for health and degradation monitoring, and incorporates three Wolfspeed 3rd generation 1.7 kV, 18 mΩ devices per switch position. The simulated power loop inductance is 14.5 nH, the simulated parasitic resistance is 0.265 m, and the simulated junction-to-case thermal resistance is 0.12182 ℃/W. To keep the die temperature below 150 ℃, a cooling coefficient of 5500 W/m2 is necessary. / Master of Science / The automotive sector is in the midst of a major transformation, propelled by the noticeable spread of electric vehicles (EVs) and autonomous driving technologies. As the industry actively evolves to accommodate this, an increasingly pressing demand becomes apparent for higher performance, reliability, sustainability, and speed. Semiconductor packages are at the forefront of this transformation, playing a crucial role in achieving these goals. Commercial vehicle makers are taking steps to respond to these demands for sustainability and speed, the driving force for this being the shift from Si IGBTs to SiC MOSFETs. Silicon Carbide is an increasingly popular choice in inverter module fabrication for electric vehicle applications owing to its inherent characteristics such as reduced resistance, higher blocking voltage, and higher temperature stability that enable high power density, increased efficiency, and speeds. This study focuses on creating a compact and efficient power module for commercial electric vehicle applications. The designed module is capable of handling high power levels while remaining compact, thus prioritizing power density. This is carefully designed to ensure it cools down effectively, minimizes unnecessary energy losses, and has a small footprint. Certain key features, such as its commutation speed, current carrying capacity, and thermal and mechanical limitations, were also studied. A temperature sensor was incorporated to monitor its health and performance over time. Simulations were performed to validate that this module performs well in terms of its resistances in the electrical conduction path and the oath of heat dissipation.

<p dir="ltr">Let k be a perfect field of characteristic p > 2. We extend the equivalence of categories between Fontaine-Laffaille modules and Z_p lattices inside crystalline representations with Hodge-Tate weights at most p-2 of Fontaine to the situation where the base ring is the power series ring in d variables over the ring of Witt vectors of k. </p>

Данное диссертационное исследование посвящено формированию фонетических навыков у китайских студентов, начинающих изучать русский язык. Работы выполнена в русле актуальных проблем в области методики обучения русскому языку как иностранному (РКИ). В рамках работы был выполнен сравнительно-сопоставительный анализ фонетических систем русского и китайского языков и выявлены основные сходства и различия, а также были определены наиболее сложные звуки русского языка для китайских учащихся. На основании исследований методистов, были рассмотрены наиболее распространенные ошибки носителей китайского языка и выявлены причины их возникновения. Структура работы состоит из двух глав: теоретической и практической. В теоретической части рассматриваются специфические черты фонетических систем русского и китайского языков, артикуляционные базы обоих языков, различия в области вокализма и консонантизма. В результате практической работы с китайскими студентами в УрФУ были определены фонетические звуки и процессы, нуждающиеся в коррекции и закреплении. На основании теоретической главы в практической части настоящего исследования разработан модуль «Фонетика русского языка для китайских студентов начального уровня», что обуславливает обозначенную цель исследования. This dissertation research is devoted to the formation of phonetic skills in Chinese students who begin to learn Russian. / The work is carried out in line with the current problems in the field of methods of teaching Russian as a foreign language (RCT). In the framework of the work was done comparative analysis of the phonetic systems of Russian and Chinese languages and identified key similarities and differences, and identified the most difficult sounds of the Russian language for Chinese students. Based on the research of methodologists, the most common mistakes of Chinese speakers were considered and the causes of their occurrence were identified. The structure of the work consists of two chapters: theoretical and practical. The theoretical part considers the specific features of the phonetic systems of the Russian and Chinese languages, articulation bases of both languages, the differences in the field of vocalism and consonantism. As a result of practical work with Chinese students in Urfu phonetic sounds and processes in need of correction and consolidation were identified. On the basis of the theoretical Chapter in the practical part of this study, the module "Phonetics of the Russian language for Chinese students of primary level" was developed, which determines the designated purpose of the study.

High quality software is a key component of various technology systems that are crucial to software producers, users, and society in general. Software application development today uses software from external sources, to achieve software implementation goals. Numerous methods, activities, and standards have been developed in order to realize quality software. Nevertheless, the pursuit for new methods of realizing and assuring quality in software is incessant. Researchers in the software engineering field are in pursuit of methods that can be on par with changing technology. Assessment of open-source software can be supported by a methodology that uses data from prior releases of a software product to predict the quality of a future release. The proposed methodology is validated using a case study of MPICH ? an open-source software product from the field of high-performance computing. A quantitative model and a module-order model have been developed that can predict the modules that are expected to have code-churn and the amount of code-churn in each module. Code-churn is defined as the amount of update activity that has been done to a software product in order to fix bugs. Further validation of the proposed methodology on other software and development of classification models for the quality factor code-churn are recommended as future work.

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