The aim of this Thesis was on one side to contribute to a better understanding of the phases formed in the TiAlSiN(O) system and the influence of impurities on their properties. On the other side it was also aimed in the Thesis to individually study the phases forming the nanocomposite. In each chapter the individual conclusions from that particular chapter are presented, a summary of the most relevant conclusions and achievements is listed below. ¡à Ti1-xAlxN(O) coatings The optical properties of Ti1-xAlxN(O) coatings were investigated. By changing the Al content in the coatings the properties change from the metallic character of TiN to dielectric character of AlN allowing to obtain spectrally selective coatings. For high Al content the films show low infrared reflectance and high emittance resulting in low equilibrium temperature, characteristics suitable for example for satellite temperature control. While the low emittance and high absorptance of low Al content are adequate for solar absorbers. The thermal stability of the low Al content coatings was investigated and the coatings are stable up to 400 ¨¬C without much change in the optical properties. ¡à SiyNz(O) coatings The silicon oxynitride coatings proved to be themselves interesting for their optical properties, specially the refractive index. The control of the microstructure was the key factor to control the optical properties of the coatings. Low energetic conditions in pure nitrogen atmosphere lead to the formation of closed porosity (nanovoids). The Raman results proved the encapsulation of nitrogen in the pores. Changing the N2 fraction in the gas mixture during deposition allows (at low power) to produce coatings with similar composition and mechanical properties presenting different refractive index by the introduction of the closed porosity. The closed porosity in the coatings is stable in N2 and vacuum up to 900 ¨¬C. Changing the target-substrate distance allows to produce coatings with different size of nanovoids. The possibility to extend the deposition of porous (close porosity) coatings to other systems is demonstrated. Porous silicon coatings were deposited by this method. ¡à nc-Ti1-xAlxN/a-SiyNz(O) coatings It was found from the XRD, SAED, EELS and XPS results, of coatings deposited under low energetic conditions, that the coatings are composed of a nanocrystalline cubic (Ti,Al)N phase embedded in an amorphous silicon oxynitride phase. The presence of oxygen impurities was identified particularly in non biased samples and estimated to be around 10 at% as the upper limit in these particular samples. Oxygen seems to be outside the nitride nanocrystallites, and mainly bond to silicon, forming amorphous silicon oxynitride phases and confirmed to occupy preferentially nitrogen positions (confirmed by HAADF and EFTEM) at the column boundaries. The application of substrate bias and substrate heating during deposition proved to be very efficient in reducing the oxygen incorporation in the coatings originating also denser coatings with improved mechanical properties. The different energetic conditions (either kinetic or thermal) at which the coatings were exposed during growth and the consequently obtained structures express the need for growth models were the transitions between zones can be achieved by a combination of substrate bias and substrate temperature.

In this study, six dc Magnetron Sputtered (dcMS) CrN hard coatings were deposited on pretreated High Speed Steel (HSS) to achieve different interface architectures. The aim was to correlate the interfacial microstructure to the adhesion of the coatings. The substrates were pretreatment using the Ionized Physical Vapor Deposition (IPVD) method High Power Impulse Magnetron Sputtering (HIPIMS) using a Cr target in an inert atmosphere varying the substrate bias ($U_b$) between 0 V and 1100 V at ambient temperature as well as at a substrate temperature of 400$^\circ$C. The deposition parameters were chosen to show how kinetically induced diffusion, etching and implantation changes the interface chemistry and structure and to investigate their effect on the adhesion on the film. At elevated temperatures, the diffusion will be thermally driven. Annealing of the deposited samples were, therefore, performed at 900 K in an Ar atmosphere. The films were characterized employing XRD, HR-TEM, A-STEM and by scratch test measurements to see how the the interface microstructure can be correlated to the adhesion of the coating. The study shows that a sputter cleaned substrate surface with well preserved crystal structure of the substrate enhances the adhesion of the coating by promotion of local epitaxial growth. However, annealing was also shown to have a large effect on the adhesion enhancement by allowing for interdiffusion in the interface region and due to promotion of interface strain relaxation. Implantation of target material on the other hand had limited influence on the adhesion compared to the clean oxide free surfaces. The low adhesion improvement when gradually changing the chemical composition at the interface is assumed to stem from that the radiation induced defects and strain diminished the positive effect of this gradient.

This thesis explores the feasibility of high power impulse magnetron sputtering (HiPIMS) to synthesize hydrogenated amorphous carbon (a-C:H) thin films in Ar-hydrocarbon ambient and the relationship between process parameters, gas phase composition and film properties. To this purpose a stable process based on HiPIMS and direct current magnetron sputtering (DCMS) has been developed. Four series of amorphous carbon thin films were deposited by hybrid HiPIMS-DCMS and pure DCMS processes at 15 mTorr pressure using different Ar-acetylene compositions and a substrate bias from 0 to -350 V. The effect of Ar-acetylene compositions and depositions processes on the film properties was investigated by characterizing the films using scanning electron microscopy (SEM), x-ray reflectometry (XRR), nanoindentation and elastic recoil detection analysis (ERDA). Moreover the process characterization was done by recording the optical emission spectrum and current and voltage waveforms of the hybrid HiPIMS-DCMS discharge. The characterization of the films revealed that the hybrid HiPIMS-DCMS process is a powerful tool for controlling the amorphous carbon film properties such as density, deposition rate, hardness and hydrogen content.

Abstract In this study, copper oxide thin films prepared by DC reactive magnetron sputtering using a Cu target were studied. By changing the oxygen partial pressure ratios and sputtering power and deposition temperatures during sputtering, we obtained copper oxide thin films with different properties. The structures of copper oxide thin films were characterized by glancing incident angle X-ray diffraction. Clear crystal orientation at (002) plane were observed at 50% and 60% oxygen partial pressure ratio. The preferred orientation at (111) plane were observed with heating substrate to 200¢J. The optical and electrical properties of cupric oxide thin films were measured by UV-VIS spectrophotometer and four-point probe system. The cupric oxide thin films deposited with heating substrate to 200¢J exhibited the resistivity of 0.77£[-cm and optical band gap of 1.57 eV. Keywords¡G cupric oxide, thin film, magnetron sputtering, band gap

In the process of sputtering, what a system operator concerns are the sputtering rate, target utilization, and substrates uniformity. All of them are influenced by variables such as electromagnetic environment, chamber temperature, and pressure. In thin film manufacturing, targets bombarded by ions will sputter atoms to the substrates in order to make thin films; therefore, when a certain target zone is extensively bombarded by ions, target surface will become thinner. In general, when certain part of the target is penetrated, it is no longer usable while utilization rate only from 30 to 50 percent. It causes considerable waste and relatively higher costs. As a result, the objective of this study is to enhance target utilization and the sputtering rate through appropriate adjustment in the structure of the existing DC Magnetron Sputtering System (MSS). Since, the magnetic field distribution in the chamber will be appropriately adjusted inside the DC MSS with extra iron annulus and active compensation magnetizations being added. However, in order to get the better structural refinement of DC MSS it needs a thorough design and management based on Taguchi Method. Then, based on such structural adjustment, electron trajectories on top surface of targets can be conveniently controlled, and target erosion patterns and the number of ions bombarding the target will be indirectly controlled. It will, as a result, achieve the objective of this study by enhancing not only the target utilization efficiency but the sputtering rate.

The purpose of this study is to investigate the effects on DC sputtered thin films after different surface treatments on aluminum targets. Abrasive papers and nonwovens were used to polish the aluminum targets before sputtering. Surface morphology of the aluminum targets before and during sputtering were characterized using surface profiler. In addition, the erosion rate of the aluminum targets was obtained by measuring the changes of the erosion depth with sputtering time at a fixed processing condition. On the other hand, the surface morphology and electrical characteristics of the deposited thin films with respect to different aluminum targets were investigated. We found that surface roughness of the treated aluminum targets is of great importance to the stability of the film quality.

Silicon heterojunction solar cells, a-Si:H/c-Si, are promising technology for future photovoltaic systems. An a-Si:H/c-Si heterojunction solar cell combines the advantages of single crystalline silicon photovoltaic with thin-film technologies. This thesis reports a detailed survey of heterojunction silicon solar cells with p-type wafer fabricated by magnetron sputtering and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques at low processing temperature. In the first part of this study, magnetron sputtering method was employed to fabricate a-Si:H thin films and then a-Si:H/c-Si solar cells. Amorphous silicon (a-Si:H) films were grown on glass in order to perform electrical and optical characterizations. The J-V characteristics of the silicon heterojunction solar cells were analyzed as a function of a-Si:H properties. It was shown that a-Si thin films with well-behaved chemical and electronic properties could be fabricated by the magnetron sputtering. Hydrogenation of the grown film could be achieved by H2 introduction into the chamber during the sputtering. In spite of the good film properties, fabricated solar cells had poor photovoltaic parameters with a low rectification characteristic. This low device performance was caused by high resistivity and low doping concentration in the sputtered film. The second part of the thesis is dedicated to heterojunction solar cells fabricated by PECVD. In this part a systematic study of various PECVD processing parameters were carried out to optimize the a-Si:H(n) emitter properties for the a-Si:H(n)/c-Si(p) solar cell applications. In the next stage, a thin optimized a-Si:H(i) buffer layer was included on the emitter side and on the rear side of the c-Si(p) to improve the surface passivation. Insertion of an a-Si:H(i) buffer layer yielded higher high open circuit voltage (Voc) with lower fill factor. It was shown that high Voc is due to the efficient surface passivation by the front/rear intrinsic layer which was also confirmed by the measurement of high effective lifetime for photo-generated carriers. Low fill factor on the other hand is caused by increasing resistivity of the solar cells by inserting low conductivity a-Si:H(i) layers.

The DC magnetron sputtering system (MSS) is used in microelectronic industries, and is a key device in the thin film depositions manufacturing process. The major influence factors of the DC magnetron sputtering system operational performance such as operational time and target utilization, which are due to unsatisfactory interactions between electrons and electromagnetic field inside the sputter. This study hopes to improve an established DC MSS, by employing commercial finite element analysis software that will be calculated the flux density, and using three-dimensional equation of motion to estimate the behavior of electrons inside the sputter; furthermore, in the light of the influence electrons position and speed, proposed refinements that the magnetic field above the target is controlled to make the performance improvement. Results from a study showed that the operational trajectory of the electrons at different magnetic flux density levels on top of the target after an operational period, the proposed refinements can increase the sputtering efficiency by as much as 30%. Other than that, through the similarities and dissimilarities between the additional magnetic fields and the main magnetic flux direction, the target erosion profiles with the refinements are more evenly spread out; reduction in the target material consumptions can also be expected.

No description available.

The thin film technology is of great importance in modern society and is a key technology in wide spread applications from electronics and solar cells to hard protective coatings on cutting tools and diffusion barriers in food packaging. This thesis deals with various aspects of thin film processing and the aim of the work is twofold; firstly, to obtain a fundamental understanding of the sputter deposition and the reactive sputter deposition processes, and secondly, to evaluate sputter deposition of specific material systems with low friction properties and to improve their performance.From studies of the reactive sputtering process, two new methods of eliminating the problematic and undesirable hysteresis effect were found. In the first method it was demonstrated that an increased process pressure caused a reduction and, in some cases, even elimination of the hysteresis. In the second method it was shown that sufficiently high oxide content in the target will eliminate the hysteresis. Further studies of non-reactive magnetron sputtering of multi-element targets at different pressures resulted in huge pressure dependent compositional gradients over the chamber due to different gas phase scattering of the elements. This has been qualitatively known for a long time but the results presented here now enable a quantitative estimation of such effects. For example, by taking gas phase scattering into consideration during sputtering from a WS2 target it was possible to deposit WSx films with a sulphur content going from sub-stoichiometric to over-stoichiometric composition depending on the substrate position relative the target. By alloying tungsten disulphide (WS2) with carbon and titanium (W-S-C-Ti) its hardness was significantly increased due to the formation of a new titanium carbide phase (TiCxSy). The best sample increased its hardness to 18 GPa (compared to 4 GPa for the corresponding W-S-C coating) while still maintaining a low friction (µ=0.02) due to the formation of easily sheared WS2 planes in the wear track.