Neste trabalho, são discutidas as características de transistores de filmes finos (TFTs) nos quais nanopartículas de óxido de zinco (ZnO) são empregadas como material ativo na camada semicondutora. O crescimento contínuo do interesse por este componente está associado à busca pelo desenvolvimento da tecnologia de dispositivos eletrônicos flexíveis, transparentes e de baixo custo. TFTs integrados com nanopartículas de ZnO são apresentados, e uma extensa rotina de caracterização elétrica transiente é realizada para avaliar como estes dispositivos se comportam e degradam ao longo do tempo. Foram medidas, ao total, 80 amostras de transistores integrados em duas configurações distintas: inverted staggered e inverted coplanar. A partir das medidas analisadas foram identificados dois grupos de comportamentos elétricos dominantes, os quais foram classificados em: efeitos abruptos e efeitos de memória. A partir dos dados coletados, foram formuladas hipóteses para modelar o comportamento típico observado. Para tanto, utiliza-se dos mecanismos de atividade de traps, de interação da camada semicondutora com o meio ambiente, de polarização de dipolos e difusão de cargas móveis no dielétrico, de formação de caminhos percolados paralelos pelas nanopartículas e de difusão de vacâncias de oxigênio e íons metálicos que podem estar associados ao comportamento elétrico observado. / In this work, the characteristics of thin-film transistors (TFTs) employing nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest in this component is associated to the development of low-cost, flexible and transparent electronic devices. The TFTs integrated with ZnO nanoparticles are presented and an extensive transient electrical characterization campaign was performed in order to evaluate how these devices behave and degrade over time. The measurement was performed for 80 samples of two different integration setups: inverted staggered and inverted coplanar. In the performed tests two main disturbances were identified, which were classified as abrupt and memory effects. From the collected data, hypothesis to model the observed typical behavior are formulated. Trapping activity, ambient interaction, dielectric dipoles, mobile charges, formed parallel-paths, oxygen vacancies and metallic ions diffusion are mechanisms that may be associated to the observed behavior.

The objective of this research is to analyze and improve linearity of envelope elimination and restoration (EER) radio frequency (RF) power amplifiers. Envelope elimination and restoration was compared to other efficiency enhancement techniques and determined to likely be the most suitable solution for implementation of multimode, multiband portable RF transmitters. Distortion, stemming from dynamic power-supply modulation of RF transistors in EER RF power amplifiers was identified as one of the key challenges to the development of commercially viable EER transmitters. This dissertation presents a study of phase distortion in RF power amplifiers (PAs) with emphasis on identification of the origins of phase distortion in EER RF power amplifiers. Circuit-level techniques for distortion mitigation are also presented. Memory effects in conventional power amplifiers are investigated through the accurate measurement and analysis of phase asymmetry of out-of-band distortion components. Novel physically-based power amplifier model is developed for attributing measured memory effects to their physical origin. The amount of linearity correction, obtained through pre-distortion for a particular RF power amplifier, is then correlated to the behavior of the memory effects in the corresponding PA. Heterojunction field-effect transistor and heterojunction bipolar transistor amplifiers are used for investigation of voltage-dependent phase distortion in handset EER RF PAs. The distortion is found to stem from vector addition of signals, generated in nonlinear circuit elements of the PA. Specifically, nonlinear base-collector capacitance and downconversion of distortion components from second harmonic frequency are found to be the dominant sources of phase distortion. Shorting of second harmonic is proposed as a way to reduce the distortion contribution of the downconverted signal. Phase distortion is reduced by 50%, however a slight degradation in the amplitude distortion is observed. Push-pull architecture is proposed for EER RF power amplifiers to cancel distortion components, generated in the nonlinear base-collector capacitance. Push-pull implementation enables a 67% reduction in phase distortion, accompanied by a 1-2 dB reduction in amplitude distortion in EER RF power amplifiers. This work, combined with other studies in the field, will help advance the development of multimode, multiband portable RF transmitters, based on the envelope elimination and restoration architecture.

Neste trabalho, são discutidas as características de transistores de filmes finos (TFTs) nos quais nanopartículas de óxido de zinco (ZnO) são empregadas como material ativo na camada semicondutora. O crescimento contínuo do interesse por este componente está associado à busca pelo desenvolvimento da tecnologia de dispositivos eletrônicos flexíveis, transparentes e de baixo custo. TFTs integrados com nanopartículas de ZnO são apresentados, e uma extensa rotina de caracterização elétrica transiente é realizada para avaliar como estes dispositivos se comportam e degradam ao longo do tempo. Foram medidas, ao total, 80 amostras de transistores integrados em duas configurações distintas: inverted staggered e inverted coplanar. A partir das medidas analisadas foram identificados dois grupos de comportamentos elétricos dominantes, os quais foram classificados em: efeitos abruptos e efeitos de memória. A partir dos dados coletados, foram formuladas hipóteses para modelar o comportamento típico observado. Para tanto, utiliza-se dos mecanismos de atividade de traps, de interação da camada semicondutora com o meio ambiente, de polarização de dipolos e difusão de cargas móveis no dielétrico, de formação de caminhos percolados paralelos pelas nanopartículas e de difusão de vacâncias de oxigênio e íons metálicos que podem estar associados ao comportamento elétrico observado. / In this work, the characteristics of thin-film transistors (TFTs) employing nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest in this component is associated to the development of low-cost, flexible and transparent electronic devices. The TFTs integrated with ZnO nanoparticles are presented and an extensive transient electrical characterization campaign was performed in order to evaluate how these devices behave and degrade over time. The measurement was performed for 80 samples of two different integration setups: inverted staggered and inverted coplanar. In the performed tests two main disturbances were identified, which were classified as abrupt and memory effects. From the collected data, hypothesis to model the observed typical behavior are formulated. Trapping activity, ambient interaction, dielectric dipoles, mobile charges, formed parallel-paths, oxygen vacancies and metallic ions diffusion are mechanisms that may be associated to the observed behavior.

Made available in DSpace on 2015-05-08T14:59:54Z (GMT). No. of bitstreams: 1 arquivototal.pdf: 2777493 bytes, checksum: eef0d78a961712e8d2857815f543d068 (MD5) Previous issue date: 2014-02-14 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / Five different compositions of the Cu-Al-Mn shape memory alloys were cast under ambient atmosphere, and characterized thought optical microscopy, X-ray diffraction, and differential scanning calorimetry. Shape recovery and superelasticity was evaluated using mechanical tensile test, always comparing the results between them and observing the influence of manganese concentration on termomecanicals properties. Results were encountered regarding the shape recovery of approximately 5%, however, the compositions of the alloys Cu-Al-Mn analyzed have high brittleness, which should be kept to a minimum. Another favorable aspect in relation to these alloys is highly sensitive to the composition of its components, where 1 %peso increase in manganese content will reduce the Mi temperature around 60 K, which facilitates the handling of their transformation temperatures according to application needs. / Cinco composições diferentes da liga Cu-Al-Mn foram elaboradas em atmosfera ambiente, e caracterizadas por Microscopia Ótica, Microscopia Eletrônica de Varredura, Difratometria de Raios-X e Calorimetria Diferencial de varredura. Em seguida suas propriedades termomecânicas foram medidas através de ensaios de tração, superelasticidade e recuperação de forma, sempre observando a influência da concentração do manganês em suas propriedades. Foram encontrados resultados promissores em relação à recuperação de forma de aproximadamente 5%, em contrapartida, as composições das ligas Cu-Al-Mn analisadas, possuem elevada fragilidade, algo que deve ser reduzido ao máximo. Outro aspecto favorável em relação a estas ligas é a alta sensibilidade à composição de seus componentes, onde 1% em peso de aumento no teor de manganês irá reduzir a temperatura Mi em torno de 60 K, o que facilita a manipulação de suas temperaturas de transformação de acordo com a necessidade da aplicação.

Neste trabalho, são discutidas as características de transistores de filmes finos (TFTs) nos quais nanopartículas de óxido de zinco (ZnO) são empregadas como material ativo na camada semicondutora. O crescimento contínuo do interesse por este componente está associado à busca pelo desenvolvimento da tecnologia de dispositivos eletrônicos flexíveis, transparentes e de baixo custo. TFTs integrados com nanopartículas de ZnO são apresentados, e uma extensa rotina de caracterização elétrica transiente é realizada para avaliar como estes dispositivos se comportam e degradam ao longo do tempo. Foram medidas, ao total, 80 amostras de transistores integrados em duas configurações distintas: inverted staggered e inverted coplanar. A partir das medidas analisadas foram identificados dois grupos de comportamentos elétricos dominantes, os quais foram classificados em: efeitos abruptos e efeitos de memória. A partir dos dados coletados, foram formuladas hipóteses para modelar o comportamento típico observado. Para tanto, utiliza-se dos mecanismos de atividade de traps, de interação da camada semicondutora com o meio ambiente, de polarização de dipolos e difusão de cargas móveis no dielétrico, de formação de caminhos percolados paralelos pelas nanopartículas e de difusão de vacâncias de oxigênio e íons metálicos que podem estar associados ao comportamento elétrico observado. / In this work, the characteristics of thin-film transistors (TFTs) employing nanoparticulated zinc oxide (ZnO) as the active semiconductor channel layer are discussed. The growing interest in this component is associated to the development of low-cost, flexible and transparent electronic devices. The TFTs integrated with ZnO nanoparticles are presented and an extensive transient electrical characterization campaign was performed in order to evaluate how these devices behave and degrade over time. The measurement was performed for 80 samples of two different integration setups: inverted staggered and inverted coplanar. In the performed tests two main disturbances were identified, which were classified as abrupt and memory effects. From the collected data, hypothesis to model the observed typical behavior are formulated. Trapping activity, ambient interaction, dielectric dipoles, mobile charges, formed parallel-paths, oxygen vacancies and metallic ions diffusion are mechanisms that may be associated to the observed behavior.

Esta tese apresenta uma nova aproximação variacional baseada no Método da Coordenada Geradora e na Teoria do Funcional da Densidade. Nesta nova aproximação, a função de onda de muitos corpos é representada como uma superposição de determinantes de Slater Kohn-Sham não-ortogonais calculados a partir de Hamiltonianos diferentes que carregam uma coordenada geradora atuando como parâmetro de deformação. A discretização integral sobre o conjunto de coordenadas geradoras fornece a energia total variacional do sistema e a contribuição de cada determinante na combinação da respectiva função de onda de muitos corpos. A flexibilidade desta nova metodologia permitiu aplicá-la no estudo das energias totais do estado fundamental e excitado dos átomos da série isoeletrônica do Hélio, utilizando diferentes conjuntos de coordenadas geradoras, diferentes aproximações para o potencial de troca e correlação e diferentes maneiras de implementar a coordenada geradora dentro do Hamiltoniano Kohn-Sham. Em seguida, as bases desta nova metodologia foram estendidas para o caso dependente do tempo, permitindo estudar, por exemplo, processos não-lineares como excitações duplas, conhecidas por sua forte dependência dos efeitos de memória. A nova metodologia foi aplicada no estudo das oscilações paramétricas de um sistema de dois elétron sob um potencial harmônico, o átomo de Hooke. Os resultados demonstram que a escolha adequada das coordenadas geradoras reproduz com precisão os efeitos lineares e não-lineares dos elétrons do sistema que não podem ser descritos pela Teoria do Funcional da Densidade Dependente do Tempo utilizando a aproximação adiabática. Assim, a nova metodologia mostra-se: flexível, pois permite calcular propriedades do estado fundamental e excitado, estáticas e dinâmicas dos sistemas eletrônicos fornecendo ainda uma aproximação variacional para as respectivas funções de onda de muitos corpos em todos os casos; e também viável, pois fornece resultados promissores no caso independente do tempo constituindo uma ferramenta simples e computacionalmente barata de incluir os efeitos de memória em qualquer aproximação adiabática no caso dependente do tempo. / A new variational approach based on the Generator Coordinate Method and Density- Functional Theory is presented. It represents the interacting many-body wave function as a superposition of non-orthogonal Kohn-Sham Slater determinants arising from different Hamiltonians featuring a generator coordinate acting as a deformation parameter. An integral discretization procedure over the set of generator coordinates provides the variational total energy of the system and the weight of each determinant in the approximation of the respective interacting many-body wave functions. The method was used to calculate the ground and excited state total energies of the Helium isoelectronic serie of atoms using different sets of generator coordinates, different approximations to the exchange-correlation potential and different implementations of the generator coordinate whithin the Kohn-Sham Hamiltonian. Next, the time dependent extension of the method is presented allowing its application, for example, on the study of nonlinear processess as double excitations which are known to be strongly dependent of the memory effects. As an illustration, the method is sucessfully applied to driven parametric oscillations of a two interacting electrons in a harmonic potential, the Hooke\'s atom. It is demonstrated that a proper choice of time-dependent generator coordinates in conjunction with the adiabatic local-density approximation reproduces the exact linear and nonlinear twoelectron dynamics quite accurately, including features associated with double excitations that cannot be captured by Time-Dependent Density-Functional Theory in the adiabatic approximation. Therefore, the method is considered, flexible since it allows to calculate ground and excited-states, static and dynamic properties of the electronic systems yeilding a variational approach to the interacting many-body wave functions for all cases, and feasible, since it improves the results for ground and excited-states total energies in the time-independente case, besides to be a conceptually and computationally simple tool to build memory effects into any existing adiabatic exchange-correlation potential in the time-dependent case.

Polychlorinated dibenzo-p-dioxins (PCDDs) and polychlorinated dibenzofurans (PCDFs) are by-products emitted from combustion sources such as municipal solid waste (MSW) incineration plants. These organic compounds are recognized as toxic, bioaccumulative and persistent in the environment. PCDD/Fs are removed from flue gases before released from MSW incineration. However, the PCDD/Fs are not destroyed but retained in the residues, thus in the environment. Understanding the pathways that lead to their formation is important in order to develop ways to suppress their formation and prevent their release into the environment. Suppressing the formation can also allow less expensive air pollution control system to be used, and/or the costs of thermally treating the residues to be reduced. The main objective of the studies underlying this thesis was to elucidate process, combustion and fuel parameters that substantially affect the emission levels and formation of PCDD/Fs in flue gases from MSW incineration. The experiments were conducted under controllable, realistic combustion conditions using a laboratory-scale reactor combusting artificial MSW. The parameter found to most strongly reduce the PCDD/F emissions, was prolonging the flue gas residence time at a relatively high temperature (460°C). Increasing the sulfur dioxide (SO2) to hydrogen chloride (HCl) ratio to 1.6 in the flue gas was also found to reduce the PCDF levels, but not the PCDD levels. Fluctuations in the combustion process (carbon monoxide peaks), high chlorine levels in the waste (1.7%) and low temperatures in the secondary combustion zone (660°C) all tended to increase the emission levels. The PCDD/PCDF ratio in the flue gas was found to depend on the chlorine level in the waste, fluctuations in the combustion process and the SO2:HCl ratio in the flue gas. The formation pathways were found to be affected by the quench time profiles in the post-combustion zone, fluctuations in the combustion process and addition of sulfur. In addition, increased levels of chlorine in the waste increased the chlorination degrees of both PCDDs and PCDFs. A tendency for increased SO2 levels in the flue gas to increase levels of polychlorinated dibenzothiophenes (sulfur analogues of PCDFs) was also detected, however the increases were much less significant than the reduction in PCDF levels.

Aquesta Tesi Doctoral se centra en el disseny d'un nou linealitzador de Predistorsió Digital (Digital Predistortion - DPD) capaç de compensar la dinàmica i els efectes no lineals introduïts pels Amplificadors de Potència (Power Amplifiers - PAs). Un dels trets més rellevants d'aquest nou predistorsionador digital i adaptatiu consisteix en ser deduïble a partir d'un model de PA anomenat Nonlinear Auto-Regressive Moving Average (NARMA). A més, la seva arquitectura multi-LUT (multi-Taula) permet la implementació en un dispositiu Field Programmable Gate Array (FPGA).La funció de predistorsió es realitza en banda base, per tant, és independent de la banda freqüencial on es durà a terme l'amplificació del senyal de RF, el que pot resultar útil si tenim en compte escenaris multibanda o reconfigurables. D'altra banda, el fet que aquest DPD tingui en compte els efectes de memòria introduïts pel PA, representa una clara millora de les prestacions aconseguides per un simple DPD sense memòria. En comparació amb d'altres DPDs basats en models més computacionalment complexos, com és el cas de les xarxes neuronals amb memòria (Time-Delayed Neural Networks - TDNN), la estructura recursiva del DPD proposat permet reduir el nombre de LUTs necessàries per compensar els efectes de memòria del PA. A més, la seva estructura multi-LUT permet l'escalabilitat, és a dir, activar or desactivar les LUTs que formen el DPD en funció de la dinàmica que presenti el PA.En una primera aproximació al disseny del DPD, és necessari identificar el model NARMA del PA. Un dels majors avantatges que presenta el model NARMA és la seva capacitat per trobar un compromís entre la fidelitat en l'estimació del PA i la complexitat computacional introduïda. Per reforçar aquest compromís, l' ús d'algoritmes heurístics de cerca, com són el Simulated Annealing o els Genetic Algorithms, s'utilitzen per trobar els retards que millor caracteritzen la memòria del PA i per tant, permeten la reducció del nombre de coeficients necessaris per caracteritzar-la. Tot i així, la naturalesa recursiva del model NARMA comporta que, de cara a garantir l'estabilitat final del DPD, cal dur a terme un estudi previ sobre l'estabilitat del model.Una vegada s'ha obtingut el model NARMA del PA i s'ha verificat l'estabilitat d'aquest, es procedeix a l'obtenció de la funció de predistorsió a través del mètode d'identificació predictiu. Aquest mètode es basa en la continua identificació del model NARMA del PA i posteriorment, a partir del model obtingut, es força al PA perquè es comporti de manera lineal. Per poder implementar la funció de predistorsió en la FPGA, cal primer expressar-la en forma de combinacions en paral·lel i cascada de les anomenades Cel·les Bàsiques de Predistorsió (BPCs), que són les unitats fonamentals que composen el DPD. Una BPC està formada per un multiplicador complex, un port RAM dual que actua com a LUT (taula de registres) i un calculador d'adreces. Les LUTs s'omplen tenint en compte una distribució uniforme dels continguts i l'indexat d'aquestes es duu a terme mitjançant el mòdul de l'envoltant del senyal. Finalment, l'adaptació del DPD consisteix en monitoritzar els senyals d'entrada i sortida del PA i anar duent a terme actualitzacions periòdiques del contingut de les LUTs que formen les BPCs. El procés d'adaptació del contingut de les LUTs es pot dur a terme en la mateixa FPGA encarregada de fer la funció de predistorsió, o de manera alternativa, pot ser duta a terme per un dispositiu extern (com per exemple un DSP - Digital Signal Processor) en una escala de temps més relaxada. Per validar l'exposició teòrica i provar el bon funcionalment del DPD proposat en aquesta Tesi, es proporcionen resultats tant de simulació com experimentals que reflecteixen els objectius assolits en la linealització del PA. A més, certes qüestions derivades de la implementació pràctica, tals com el consum de potència o la eficiència del PA, són també tractades amb detall. / This Ph.D. thesis addresses the design of a new Digital Predistortion (DPD) linearizer capable to compensate the unwanted nonlinear and dynamic behavior of power amplifiers (PAs). The distinctive characteristic of this new adaptive DPD is its deduction from a Nonlinear Auto Regressive Moving Average (NARMA) PA behavioral model and its particular multi look-up table (LUT) architecture that allows its implementation in a Field Programmable Gate Array (FPGA) device.The DPD linearizer presented in this thesis operates at baseband, thus becoming independent on the final RF frequency band and making it suitable for multiband or reconfigurable scenarios. Moreover, the proposed DPD takes into account PA memory effects compensation which representsan step forward in overcoming classical limitations of memoryless predistorters. Compared to more computational complex DPDs with dynamic compensation, such Time-Delayed Neural Networks (TDNN), this new DPD takes advantage of the recursive nature of the NARMA structure to relax the number of LUTs required to compensate memory effects in PAs. Furthermore, its parallel multi-LUT architecture is scalable, that is, permits enabling or disabling the contribution of specific LUTs depending on the dynamics presented by a particular PA.In a first approach, it is necessary to identify a NARMA PA behavioral model. The extraction of PA behavioral models for DPD linearization purposes is carried out by means of input and output complex envelope signal observations. One of the major advantages of the NARMA structure regards its capacity to deal with the existing trade-off between computational complexity and accuracy in PA behavioral modeling. To reinforce this compromise, heuristic search algorithms such the Simulated Annealing or Genetic Algorithms are utilized to find the best sparse delays that permit accurately reproducing the PA nonlinear dynamic behavior. However, due to the recursive nature of the NARMA model, an stability test becomes a previous requisite before advancing towards DPD linearization.Once the PA model is identified and its stability verified, the DPD function is extracted applying a predictive predistortion method. This identification method relies just on the PA NARMA model and consists in adaptively forcing the PA to behave as a linear device. Focusing in the DPD implementation, it is possible to map the predistortion function in a FPGA, but to fulfill this objective it is first necessary to express the predistortion function as a combined set of LUTs.In order to store the DPD function into a FPGA, it has to be stated in terms of parallel and cascade Basic Predistortion Cells (BPCs), which are the fundamental building blocks of the NARMA based DPD. A BPC is formed by a complex multiplier, a dual port RAM memory block acting as LUT and an address calculator. The LUT contents are filled following an uniform spacing procedure and its indexing is performed with the amplitude (modulus) of the signal's envelope.Finally, the DPD adaptation consists in monitoring the input-output data and performing frequent updates of the LUT contents that conform the BPCs. This adaptation process can be carried out in the same FPGA in charge of performing the DPD function, or alternatively can be performed by an external device (i.e. a DSP device) in a different time-scale than real-time operation.To support all the theoretical design and to prove the linearization performance achieved by this new DPD, simulation and experimental results are provided. Moreover, some issues derived from practical experimentation, such as power consumption and efficiency, are also reported and discussed within this thesis.

L'amplificateur de puissance est le module le plus critique dans les équipements de communication radio. Il détermine la qualité de la liaison par sa linéarité et a une contribution conséquente dans la consommation de l'émetteur ; environ 60% de l'énergie consommée est consacré à l'amplification. Il est donc crucial de le faire fonctionner avec un rendement énergétique élevé. Cependant, ces deux spécifications principales de l'amplificateur que sont la linéarité et le rendement énergétique sont antagoniques. Par conséquent, la conception d'un module d'amplification de puissance suppose de trouver un compromis entre la linéarité et le rendement. L'optimisation de ce compromis est la raison d'être des techniques de linéarisation d'amplificateurs et d'amélioration du rendement, parmi lesquelles la prédistorsion numérique (DPD) et les techniques de réduction du PAPR du signal (CFR).Le cœur de cette thèse est la linéarisation d'amplificateurs RF haute-puissance et large-bande par prédistorsion numérique (DPD). Dans ces travaux, nous abordons trois problématiques liées à la prédistorsion et qui constituent des verrous technologiques importants. Le premier aspect concerne l'implémentation de la prédistorsion numérique dans un contexte multi-bande où le signal à linéariser comporte plusieurs formes d'ondes, situées à des fréquences différentes. La seconde problématique est l'utilisation conjointe de la prédistorsion avec une technique de CFR. Dans la majorité des applications haute-puissance, les techniques de DPD et de CFR sont présentes de manière complémentaire, cependant elles sont utilisées de façon autonome et disjointe. Celles-ci gagneraient en performances de linéarisation en étant implémentées de manière plus concertée. . Le dernier thème abordé par cette thèse est l'effet des désadaptations d'impédance de l'antenne sur le mode de fonctionnement de l'amplificateur. La variation de l'impédance d'antenne entraine des réflexions de signal vers l'amplificateur qui modifient ses spécifications de linéarité et de rendement. Nous améliorons la linéarité du système DPD + AP, lorsque l'amplificateur est soumis à des variations de l'impédance à sa charge, grâce à une correction adaptative de gain / Power amplifier is one of the most critical element within radiocommunications systems. The PA is their main source of nonlinearities and it has a great contribution on the emitter's power consumption. Running the PA with highest power efficiency is thus as crucial as having it linear for a good communication quality. However these two specifications of the PA are antagonistic and PA manifacturers need to find a compromise between linearity and power efficiency. Digital Predistortion (DPD) and Crest factor Reduction techniques are intended to improve power efficiency while preserving linearity or inversely. Linearization of wideband RF power amplifiers using Digital Predistortion is the focus of this thesis. Three DPD issues are investigated in these works. The first issue deals with multiband linearization where signals with various waveforms located at different frequency bands are amplified. The second objective of this thesis is to study a concurrent DPD/CFR systems based on an automatic estimation of the necessary CFR gain. The last part of this dissertation deals with PA linearization under antenna load variations. Indeed, the impedance of antenna may vary because of electromagnetic objects that are present in its vicinity. Those impedance variations may instigate signal reflections toward the PA, that modify some of its main specifications (linearity, delivered power and efficiency). Our goal in this field is to preserve DPD linearization performances under antenna load mismatch

Conselho Nacional de Desenvolvimento Científico e Tecnológico / É conhecido que derivações microscópicas obtidas através de métodos de teoria quântica de campos (TQC) podem conduzir a complicadas equações de movimento (EdM) que possuem um termo dissipativo com memória e um termo de ruído colorido. Um caso particularmente interessante é o modelo que escreve a interação entre um sistema e um banho térmico a temperatura T. Motivado por isso, usamos uma prescrição que nos permite reescrever EdMs não-markovianas semelhantes as obtidas em TQC em termos de um sistema de equações locais, para então confrontarmos a solução desse sistema com a solução aproximada usada correntemente na literatura, a chamada aproximação markoviana. A pergunta chave a qual se pretende responder aqui é: dado um conjunto de parâmetros que descrevem o modelo, a aproximação markoviana é suficientemente boa para descrever a dinâmica do sistema se comparada a dinâmica obtida atravéS da EdM não-markoviana? Além disso, consideramos uma versão linear da ELG de forma que pudéssemos determinar o nível de confiança da nossa metodologia numérica, procedimento este realizado comparando-se a solução analítica com a solução numérica. Como exemplo de aplicação prática do tema discutido aqui, comparamos a evolução não-markoviana do inflaton com a evolução markoviana do mesmo num modelo de universo primordial denominado inflação não-isentrópica (warm inflation). / It is known that microscopic derivations based on quantum field theory (QFT)methods can lead to quite complicated equations of motion (EoM) with a dissipation term with memory and a colored noise term. A very interesting particular case is the model that describes the interaction between a system and a thermal bath at some temperature T. Motivated by this, we use a prescription that allow us to rewrite similar non-Markovian EoMs to that obtained in QFT in terms of a set of local equations, so that we can contrast the solution of this system of equations with the approximated solution currently used in the literatury, the so-called Markovian approximation. The key question we want to address here is: given a set of parameters that characterizes the system and the bath, is the Markovian approximation good enough to represent the system's dynamics? We also have considered a linear version of the non-Markovian equation in order to check the confiability of our numerical approach. For that, we have compared the analytical solution with the numerical one. As an example of practical application of the theme discussed here, we contrast the non-Markovian and the Markovian evolution of the inflaton field in an early universe model called warm in inflation.