The synthesis and properties of metal phosphonates prepared using piperazine-based bisphosphonic acids have been investigated. The ligands N,N’-piperazinebis(methylenephosphonic acid) (H₄L), and the 2-methyl (H₄L-Me) and 2,5-dimethyl (H₄L 2,5-diMe) derivatives have been prepared using a modified Mannich reaction. Hydrothermal reaction of gels prepared from metal (II) acetates and the bisphosphonic acids results in the synthesis of four structures: STA-12, Ni VSB-5, Co H₂L.H₂O and Mg H₂L. STA-12, synthesised by reaction of Mn, Fe, Co or Ni acetate with H₄L or H₄L-Me, has been investigated further. STA-12 crystallises in the space group R⁻₃, and Ni STA-12 is the most crystalline version. Its structure was solved from synchrotron data (a = b = 27.8342(1) Å, c = 6.2421(3) Å, α = β = 90°, γ = 120°), and it has large 10 Å hexagonal shaped pores. Helical chains of Ni octahedra are coordinated by the ligands, resulting in phosphonate tetrahedra pointing towards the pore space. Water is present, both coordinated to the Ni²⁺ cations and physically adsorbed in the pores. Mixed metal structures based on Ni STA-12, where some Ni is replaced in the gel by another divalent metal (Mg, Mn, Fe or Co) can also be synthesised. Dehydration of STA-12 results in two types of behaviour, depending on the metal present. Rhombohedral symmetry is retained on dehydration of Mn and Fe STA-12, the a cell parameter decreasing compared to the as-prepared structures by 2.42 Å and 1.64 Å respectively. Structure solution of dehydrated Mn STA-12 indicates changes in the torsion angles of the piperazine ring bring the inorganic chains closer together. Fe and Mn STA-12 do not adsorb N₂, which is thought to be due to the formation of an amorphous surface layer. Dehydration of Ni and Co STA-12 causes crystallographic distortion. Three phases were isolated for Ni STA-12: removal of physically adsorbed water results in retention of rhombohedral symmetry, while dehydration at 323 K removes some coordinated water forming a triclinic structure. A fully dehydrated structure (dehydrated at 423 K) was solved from synchrotron data (a = 6.03475(5) Å, b = 14.9156(2) Å, c = 16.1572(7) Å, α = 112.5721(7)°, β = 95.7025(11)°, γ = 96.4950(11)°). The dehydration mechanism, followed by UV-vis and Infra-red spectroscopy, involves removal of water from the Ni²⁺ cations and full coordination of two out of three of the phosphonate tetrahedra forming three crystallographically distinct Ni and P atoms. No structural distortion takes place on dehydration of Ni and Co STA-12 prepared using the methylated bisphosphonate, and the solids give a higher N₂ uptake as a result. Dehydrated Ni and Co STA-12 were tested for adsorption performance for fuel related gases and probe molecules. Investigations were undertaken at low temperature with H₂, CO and CO₂, and ambient temperature with CO₂, CH₄, CH₃CN, CH₃OH and large hydrocarbons. Due to the presence of lower crystallinity, Co STA-12 has an inferior adsorption performance to Ni STA-12, although it has similar adsorption enthalpies for CO₂ at ambient temperature (-30 to -35 kJ mol⁻¹). Ni STA-12 adsorbs similar amounts of CO₂ and N₂ at low temperature, indicating the adsorption mechanisms are similar. Also, it adsorbs 10 × more CO₂ than CH₄ at low pressure, meaning it could be used for separation applications. Ni STA-12 adsorbs 2 mmol g⁻¹ H₂ with an enthalpy of -7.5 kJ mol⁻¹, the uptake being due to adsorption on only one-third of the Ni²⁺ cations. The uptake for CO is 6 mmol g⁻¹, with adsorption enthalpies ranging from -24 to -14 kJ mol⁻¹. This uptake is due to adsorption on all the Ni²⁺, meaning the adsorption enthalpies are high enough to allow the structure to relax. This is also observed for adsorption of CH₃CN and CH₃OH, where there is a return to rhombohedral symmetry after uptake. The adsorption sites in dehydrated Ni and Co STA-12 were investigated via Infra-red spectroscopic analysis of adsorbed probe molecules (H₂, CO, CO₂, CH₃CN and CH₃OH). The results indicate the adsorption sites at both low and ambient temperature are the metal cations and the P=O groups. The metal cation sites are also characterised as Lewis acids with reasonable strength. STA-12 was shown to have acidic activity for the liquid phase selective oxidations of 1-hexene and cyclohexene, although there is evidence active sites are coordinated by products and/or solvents during the reaction. STA-12 also demonstrates basic activity for the Knoevenagel condensation of ethyl cyanoacetate and benzaldehyde. Modification of STA-12 by adsorption of diamine molecules causes a slight increase in the basicity, and the highest conversions are where water and diamine molecules are both present.

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1-100)-oriented (m-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology. One of the obstacles impeding the development of this technology is the lack of suitable substrates for high quality materials having semi-polar and nonpolar orientations. Even though the growth of free-standing GaN substrates (homoepitaxy) could produce material of reasonable quality, the native nonpolar and semi-polar substrates are very expensive and small in size. On the other hand, GaN growth of semi-polar and nonpolar orientations on inexpensive, large-size foreign substrates (heteroepitaxy), including silicon (Si) and sapphire (Al2O3), usually leads to high density of extended defects (dislocations and stacking faults). Therefore, it is imperative to explore approaches that allow the reduction of defect density in the semi-polar GaN layers grown on foreign substrates. In the presented work, I develop a cost-effective preparation technique of high performance light emitting structures (GaN-on-Si, and GaN-on-Sapphire technologies). Based on theoretical calculations predicting the maximum indium incorporation efficiency at θ ~ 62º (θ being the tilt angle of the orientation with respect to c-plane), I investigate (11-22) and (1-101) semi-polar orientations featured by θ = 58º and θ = 62º, respectively, as promising candidates for green emitters. The (11-22)-oriented GaN layers are grown on planar m-plane sapphire, while the semi-polar (1-101) GaN are grown on patterned Si (001). The in-situ epitaxial lateral overgrowth techniques using SiNx nanoporous interlayers are utilized to improve the crystal quality of the layers. The data indicates the improvement of photoluminescence intensity by a factor of 5, as well as the improvement carrier lifetime by up to 85% by employing the in-situ ELO technique. The electronic and optoelectronic properties of these nonpolar and semi-polar planes include excitonic recombination dynamics, optical anisotropy, exciton localization, indium incorporation efficiency, defect-related optical activities, and some challenges associated with these new technologies are discussed. A polarized emission from GaN quantum wells (with a degree of polarization close to 58%) with low non-radiative components is demonstrated for semi-polar (1-101) structure grown on patterned Si (001). We also demonstrated that indium incorporation efficiency is around 20% higher for the semi-polar (11-22) InGaN quantum wells compared to its c-plane counterpart. The spatially resolved cathodoluminescence spectroscopy demonstrates the uniform distribution of indium in the growth plane. The uniformity of indium is also supported by the relatively low exciton localization energy of Eloc = 7meV at 15 K for these semi-polar (11-22) InGaN quantum wells compared to several other literature reports on c-plane. The excitons are observed to undergo radiative recombination in the quantum wells in basal-plane stacking faults at room temperature. The wurtzite/zincblende electronic band-alignment of BSFs is proven to be of type II using the time-resolved differential transmission (TRDT) method. The knowledge of band alignment and degree of carrier localization in BSFs are extremely important for evaluating their effects on device properties. Future research for better understanding and potential developments of the semi-polar LEDs is pointed out at the end.

La Spectroscopie par Effet Tunnel Inélastique (IETS) avec un Microscope à Effet Tunnel (STM) est une nouvelle technique de spectroscopie vibrationnelle, qui permet de caractériser des propriétés très fines de molécules adsorbées sur des surfaces métalliques. Des règles de selection d’excitation vibrationnelle basées sur la symétrie ont été proposées, cependant, elles ne semblent pas exhaustives pour expliquer la totalité du mécanisme et des facteurs en jeu; elles ne sont pas directement transposables pour les propriétés d'un adsorbat et sont lourdes d'utilisation. Le but de cette thèse est donc d'améliorer ces règles de selection par une étude théorique. Un protocole de simulation de l'IETS a été développé, paramétré, et évalué, puis appliqué pour calculer des spectres IETS pour différentes petites molécules, qui sont systématiquement liées, sur une surface de cuivre. Des principes additifs de l'IETS ont été developpés, notamment concernant l’extension dans le vide de l’état de tunnel, l'activation/ quench sélectif de certains modes du aux propriétés électroniques de certains fragments moléculaires, et l'application de certaines règles d'addition de signaux IETS. De plus, des empreintes vibrationnelles par des signaux IETS ont été determinées pour permettre de différentier entre les orientations des adsorbats, la nature chimique des atomes et les isomères de structures. Une stratégie simple utilisant les propriétés de distribution de la densité électronique de la molécule isolée pour prédire les activités IETS sans des couts importants de calculs a aussi été développée. Cette expertise a été utilisée pour rationaliser et interpréter les mesures expérimentales des spectres IETS pour des métalloporphyrines et métallophtalocyanines adsorbées. Ces études sont les premières études IETS pour des molécules aussi larges et complexes. L'approche expérimentale a permis de déterminer les limitations actuelles des simulations IETS. Les défauts associés à l'identification ont été résolus en faisant des simulations d'images STM complémentaires. / Inelastic Electron Tunneling Spectroscopy (IETS) with the Scanning Tunneling Microscope (STM) is a novel vibrational spectroscopy technique that permits to characterize very subtle properties of molecules adsorbed on metallic surfaces. Its proposed symmetry-based propensity selection rules, however, fail to fully capture its exact mechanism and influencing factors; are not directly retraceable to an adsorbate property and are cumbersome. In this thesis, a theoretical approach was taken to improve them. An IETS simulation protocol has been developed, parameterized and benchmarked, and consequently used to calculate IETS spectra for a set of systematically related small molecules on copper surfaces. Extending IETS principles were deduced that refer to the tunneling state’s vacuum extension, the selective activating/quenching of certain types of modes due to the moieties’ electronic properties, and the applicability of a sum rule of IETS signals. Also, fingerprinting IETS-signals that enable discrimination between adsorbate orientations, the chemical nature of atoms and structural isomers were determined and a strategy using straightforward electronic density distribution properties of the isolated molecule to predict IETS activity without (large) computational cost was developed. This expertise was used to rationalize and interpret experimentally measured IETS spectra for adsorbed metalloporphyrins and metallophthalocyanines, being the first IETS studies of this large size. This experimental approach permitted to determine the current limitations of IETS-simulations. The associated identification shortcomings were resolved by conducting complementary STM-image simulations.

[ES] La presente Tesis Doctoral ha investigado el desarrollo de fotocatalizadores heterogéneos tipo MOF con topología UiO-66 y MIL-125 para la obtención de combustibles solares a partir del agua y del CO2. Inicialmente, en la introducción se ha revisado el estado del arte actual sobre el empleo de combustibles fósiles, las energías renovables y los combustibles solares como vectores energéticos. En esta sección se ha enfatizado sobre los procesos de fotocatálisis basados en semiconductores inorgánicos y MOFs para obtener combustibles solares. Los resultados de la tesis indican que el material tipo MOF UiO-66(Zr)-NH2 es un fotocatalizador más eficiente que sus análogos UiO- 66(Zr)-X (X: H o NO2) o que el MOF de referencia de titanio MIL-125(Ti)-NH2 para la obtención de hidrógeno a partir de la mezcla de agua y glicerol. Por otro lado, se ha demostrado la posibilidad de desarrollar materiales UiO- 66(Zr)-X (X: NH2 o NO2) con defectos estructurales introducidos con ácido acético o trifluoroacético como moduladores y que presentan actividades fotocatalíticias y eficiencias de separación de carga fotoinducida mejoradas para la generación de hidrógeno a partir de mezclas de agua y/o metanol. En esta Tesis también se ha demostrado la importancia del ligando 2- nitrotereftalato en la preparación de fotocatalizadores activos mono- o bimetálicos de Zr(IV) y Zr(IV)/Ti(IV) con topología UiO-66 respecto a los análogos preparados con el ligando 2-aminoteftalato. El material RuOx@UiO- 66(Zr/Ti)-NO2 mostró la máxima actividad fotocatalítica para la reacción de hidrogenación en fase gas de CO2 a CH4 y se propuso que opera bajo un mecanismo dual fotoquímico y fototérmico. / [CA] La present Tesi Doctoral ha investigat el desenvolupament de fotocatalitzadors heterogenis tipus MOF amb topologia UiO-66 i MIL-125 per a l'obtenció de combustibles solars a partir de l'aigua i del CO¿. Inicialment, en la introducció s'ha revisat l'estat de l'art actual sobre l'ús de combustibles fòssils, les energies renovables i els combustibles solars com a vectors energètics. En esta secció s'ha emfatitzat sobre els processos de fotocatàlisis basats en semiconductors inorgànics i MOFs per a obtindre combustibles solars. Els resultats de la Tesi indiquen que el material UiO- 66(Zr)- NH2 és un fotocatalizador més eficient que els anàlegs UiO- 66(Zr)- X (X: H o NO2) o que el referent de MOF de titani MIL-125(Ti)-NH2 per a l'obtenció d'hidrogen a partir de mescles d'aigua i glicerol. D'altra banda, s'ha demostrat la possibilitat de desenvolupar materials UiO-66(Zr)-X (X: NH2 o NO2) amb defectes estructurals introduïts amb àcid acètic o trifluoroacétic com a moduladors i que presenten activitats fotocatalítics i eficiències de separació de càrrega fotoinducida millorades per a la generació d'hidrogen a partir de mescles d'aigua i/o metanol. En esta tesi també s'ha demostrat la importància del lligant 2- nitrotereftalat en la preparació de fotocatalitzadors actius mono- o bimetàl·lics de Zr(IV) i Zr(IV)/Ti(IV) amb topologia UiO-66 respecte als anàlegs preparats amb el lligant 2-aminoteftalat. El material RuOx@UiO- 66(Zr/Ti)-NO2 va mostrar la màxima activitat fotocatalítica per a la reacció d'hidrogenació en fase gas de CO¿ a CH4 i es va proposar que opera per un mecanisme dual fotoquímic i fototérmic. / [EN] This PhD Thesis has investigated the development of heterogeneous MOF- type photocatalysts with UiO-66 and MIL-125 topology to obtain solar fuels from water and CO2. Initially, the introduction has reviewed the current state of the art on the use of fossil fuels, renewable energies and solar fuels as energy carriers. In this section, emphasis has been placed on photocatalysis processes based on inorganic semiconductors and MOFs to obtain solar fuels. The results of the thesis indicate that the MOF-type material UiO-66(Zr)-NH2 is a more efficient photocatalyst than the analogues UiO-66(Zr)-X (X: H or NO2) or the titanium MOF MIL-125(Ti)-NH2 for obtaining H2 from the mixtures of water and glycerol. On the other hand, the possibility of developing UiO-66(Zr)-X (X: NH2 or NO2) materials with structural defects introduced with AA or TFA as modulators and presenting enhanced photocatalytic activities and photoinduced charge separation efficiencies for the generation of H2 from water and/or CH3OH mixtures has been demonstrated. This Thesis has also demonstrated the importance of the 2-nitroterephthalate ligand in the preparation of mono- or bimetallic Zr(IV) and Zr(IV)/Ti(IV) active photocatalysts with UiO-66 topology with respect to the analogues prepared with the 2-aminoterephthalate ligand. The RuOx@UiO-66(Zr/Ti)-NO2 material showed the highest activity compared to RuOx@UiO-66(Zr/Ti)-NO2 material. / Rueda Navarro, CM. (2024). Metal-Organic Framework-Based Photocatalysts for Fuels Production [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/213302

Diese Arbeit untersucht das Aufwachsen von dünnen GaP-Schichten auf Si(100)-Oberflächen mittels metallorganischer Gasphasenabscheidung (MOVPE) und die damit verbundene Entstehung von Antiphasendomänen (APDs). Die Vermessung der Si(100)-Substratoberfläche, der III-V/Si(100)-Grenzfläche und der abgeschiedenen GaP-Filme mit oberflächenempfindlichen Messverfahren dient der Etablierung APD-freier III-V-Heteroepitaxie auf Si(100). Die Präparation reiner Si(100)-Oberflächen frei von Sauerstoff in der MOVPE-Umgebung konnte durch Röntgenphotoelektronenspektroskopie (XPS) belegt werden. Vorwiegend doppelgestufte Substrate wurden sowohl auf 0.1°, 2° als auch 6° fehlorientierten Substraten erzielt. Im Widerspruch zu etablierten Ergebnissen im Ultrahochvakuum richteten sich die Dimere auf 0.1° und 2° Proben senkrecht zu den Doppelstufenkanten aus, vermutlich durch den Einfluss des Wasserstoffs in der MOVPE. Infrarotspektroskopie (FTIR) belegte eine Monohydridterminierung infolge der Präparation, während in-situ Reflexions-Anisotropie-Spectroskopie (RAS) zeigte, dass diese bei höheren Prozesstemperaturen nicht vorliegt. Für die GaP-Heteroepitaxie auf diesen Substraten wurde ein optisches in-situ Messverfahren für die quantitative Bestimmung des APD-Gehaltes entwickelt, welches auf dem eingehenden Verständnis der Rekonstruktionen von GaP(100), der assozierten RAS-Signaturen und dem mit Rastertunnelmikroskopie (STM) und Beugung niedrigenergetischer Elektronen (LEED) etablierten mikroskopischen Verständnis der Oberflächen beruht. Die APD-Quantifizierung mittels RAS wurde durch empirische Korrektur von Interferenzeffekten und optische Modellrechnungen, die auch Rückschlüsse auf die Grenzflächenanisotropie erlauben, deutlich verbessert. Der Abgleich mit unterschiedlichsten Mikroskopiemethoden, basierend auf niedrigenergetischen Elektronen (LEEM), Elektronentransmission (TEM) und Rasterkraftverfahren (AFM) bestätigt die erzielten Ergebnisse. / The present work investigates the growth of thin, pseudomorphic GaP films by metalorganic vapor phase epitaxy (MOVPE) on Si(100) surfaces by a variety of surface-sensitive methods and pays with specific attention to the substrate induced anti-phase disorder in this lattice matched model system for III-V/Si(100) heteroepitaxy. Thorough X-ray photoelectron spectroscopy investigations verified the preparation of clean Si(100) surfaces free of oxygen in the MOVPE ambient. Predominantly double-layer stepped Si(100) surfaces were obtained for 0.1°, 2°, and 6° misoriented substrates. In contrast to results established in ultra-high vacuum (UHV), double-layer steps with dimers oriented perpendicular to their edges were observed, which was attributed to the presence of hydrogen as a process gas in the MOVPE environment. A monohydride termination of Si(100) was determined after substrate preparation by Fourier-transform infrared spectroscopy (FTIR), while reflectance anisotropy spectroscopy (RAS) showed the absence of hydrogen termination at higher temperatures. Optical in situ spectroscopy was established as a method for the quantitative evaluation of anti-phase disorder in GaP heteroepitaxy based on a detailed understanding of the GaP(100) surface reconstructions, of the development of the corresponding RAS signatures, and of the associated surface structure studied by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The in situ RAS quantification was greatly improved by empirical correction of thin film interference and optical model calculations, which also enable extraction of the GaP/Si(100) interface anisotropy. The characterization was supported by benchmarking to atomic force microscopy (AFM) and transmission electron microscopy (TEM) results as well as to low energy electron microscopy (LEEM), which was used for surface sensitive visualization of anti-phase domains on a mesoscopic length scale.