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The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized by optical microscopy, scanning electron microscopy, x-ray diffraction, and photoluminescence measurement. It was found that a thicker AlN buffer layer resulted in a higher crystalline quality of subsequently grown GaN films. The GaN with a thicker buffer layer has a narrower PL peak. Cracks were found in the GaN film which might be due to the formation of amorphous SiNx at the AlN and Si interface. / Singapore-MIT Alliance (SMA)

AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM results show that with TMA pre-treatments, AlN grows in a pseudo-2-dimensional mode because the lateral growth rate of AlN is increased, and the wetting property of the AlN on silicon is improved. Also, no amorphous SiNx layer was observed at the interface with TMA pre-treatments and AlN films with good epitaxial crystalline quality were obtained. Transmission electron diffraction patterns revealed that the AlN and Si have the crystallographic orientation relationship AlN [0001]║Si[111] and AlN[11 2 0] ║Si[110]. High resolution transmission electron microscopy indicates a 5:4 lattice matching relationship for AlN and Si along the Si [110] direction. Based on this observation, a lattice matching model is proposed. / Singapore-MIT Alliance (SMA)

The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper. / Singapore-MIT Alliance (SMA)

Increase in demand for uniform ceramic coatings on larger industrial components have led to a need for a PP-MOCVD coating system scale up. The objective of this thesis is to develop a fully functional coating system operating in the PP-MOCVD regime that is able to deposit thin film ceramic coatings on commercial or industrial components with complex 3D geometries. This can be achieved by applying engineering and vacuum science theories, coupled with the established fundamentals of PP-MOCVD. A larger system was designed and assembled around the boundaries set by the dimensions and geometry of a stainless steel water pump impellor acting as the base substrate. Most of the components were sourced off the shelf from vacuum and fluid specialists. Components which were unavailable for various reasons were designed, and machined in-house by the departmental workshop. Initial test depositions were conducted using small stainless steel disk substrates, heated using a resistive heater similar to the one utilised on the research scale system. The test depositions were performed with the heater and substrate combination placed in strategic locations. This is to test the overall uniformity of precursor flux in the chamber volume. The resulting coating uniformity on the disk surfaces were fair but problems such as the large collection of unreacted precursor on the chamber viewport and valve timing issues had to be addressed. Before making any improvements to the system, each of the process areas leading to a successful deposition needed to be understood. Five process areas were developed: ‘Liquid Delivery’, ‘Atomization’, ‘Evaporation’, ‘Transport and Reactor Geometry’, and ‘Droplet Management’. Each of the process areas were analysed individually and changes were made to push for a maximum evaporation efficiency. xviii The improved system provided opportunities to perform depositions that were once not possible for PP-MOCVD. Two sets of deposition tests were designed and conducted. Firstly, the improvements were justified with a series of depositions using flat stainless steel plates with dimensions 65x65x5mm. The other set of 3D case study depositions involve observing the effects of the operational parameters of PP-MOCVD on the uniformity and penetration depths of the coatings into different sized macro blind trenches. Five geometric setup conditions were used to justify the improvements made to the system. These are: ‘Substrate positioned in the direct line of spray’, ‘Use of an unheated receptor’, ‘Use of a heated receptor’, ‘Use of an unheated receptor with a non-axial substrate setup’, and “Choked Flow’. As expected, the uniformity of the coatings on both sides of the plate varied significantly when the substrate is placed over the line of sight of the precursor spray. Similarly, the coating produced under the induced choked flow condition resulted in low conformality. The introduction of an unheated receptor plate resulted in an increase in uniformity on both sides of the plate. Further prove that PP-MOCVD is geometry independent is provided by the deposition made with the non-axial substrate placement resulting in a coating of similar result to the unheated receptor. The use of a heated receptor provided a source for a secondary evaporation of the larger precursor droplets collected resulting in an increase in coating thickness while maintaining good conformality. The effects of temperature, pressure, injection volume, and concentration were explored in the final case study. With maximum depths of 50mm, the macro blind trenches has an aspect ratio of 1:1 and cross-sectional areas of 3x3mm, 9x9mm, and 15x15mm. The final results show that as the temperature rises, the depth penetrated into the trench decreases. This could be due to the change in rate limiting steps as homogeneous reactions begin to increase at higher temperatures. Similar trends were observed with increasing pressure. As the pressure difference between the volume of the trenches and the rest of the chamber decreases, the push needed to xix force the precursor down the trench also decreases, resulting in less depth penetration. The effects of injection volume and concentration observed, can be explained by how much precursor molecules are present during one pulse cycle. The more that is available at any given time, the more likely a reaction will occur and deeper the penetration will get. Of course a ceiling or a limit exists where the molecules in the chamber will get evacuated without being reacted. The future work made possible as a result of the scaled up system are proposed. These include a scale up of the operational parameters to suit any given substrate geometry, improvements to the heating source to achieve greater thermal uniformity, further improvements to the overall system accessibility, and performing other depositions using different substrate materials and precursor types.

In this study, the design and fabrication of a monolithic InP-based 1550-nm photonic-crystal surfaceemitting laser (PCSEL) is reported. The device is composed by an InGaAsP multi-quantum well (MQW) active layer and InP photonic crystal (PhC) formed by metal organic chemical vapour deposition (MOCVD). A theoretical study based mainly on the Fourier modal method using Stanford Stratified Structure Solver (S 4) and finite element analysis using COMSOL Multiphysics was carried out in order to optimize the emission at 1550 nm due to the two-dimensional band-edge resonance effect at the Γ point.The device design and modeling, materials testing (annealing and MOCVD regrowth), process optimization and the fabrication of light emitting diodes (LEDs) based on the same structure as the PCSELs (without the PhC) is reported. The fabricated devices show a low series resistance of 8.19 Ω and a turn-on voltage of 0.84 V. The average differential output power is 41 mW/A with an electroluminescent peak at 1511 nm. The full assembly of the final PCSEL devices is beyond the scope of the present thesis and corresponds to an ongoing project expected to be finalized within the coming year. However, detailed guidelines and fabrication instructions, including the manufacturing of an appropriate lithographic mask set, are provided. / Föreliggande examensarbete rapporterar designen och tillverkningsprocessen för en monolitisk InPbaserad 1550-nm så kallad Photonic-Crystal Surface-Emitting Laser (PCSEL). Komponenten bestå r av en aktiv kvantbrunnsstruktur i InGaAsP och ett fotoniskt-kristall (PhC)-lager i InP, bägge odlade med hjälp av metalorganisk gasfasepitaxi (MOCVD). En teoretisk studie baserad på Fourier-modalmetoden med användning av Stanford Stratified Structure Solver (S4) och finit elementanalys-metoden med med hjälp av av COMSOL Multiphysics utfördes för att optimera emissionen vid 1550 nm genom en tvådimensionell bandkantsresonanseffekt vid Γ punkten.Rapporten går igenom komponentdesign och modellering, materialtestning (värmebehandling och MOCVDåterväxt), processoptimering och tillverkning av lysdioder (LED) baserade på samma struktur som PCSELkomponenterna (men utan PhC-strukturering). De tillverkade lysdioderna uppvisar en låg serieresistans på 8.19 Ω och en framspänning på 0.84 V. Den genomsnittliga differentiella utgångseffekten är 41 mW/A med en luminescenstopp vid 1511 nm. Den slutliga tillverkningen av färdiga PCSEL-enheter ligger utanför ramen för detta examensarbete och motsvarar istället ett pågående projekt som förväntas bli slutfört inom det kommande året. Däremot ges detaljerade riktlinjer och tillverkningsinstruktioner, för vilket ett fotolitografiskt mask-set även tagits fram.