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171	Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications Cardoso, Adilson Silva 12 January 2015 (has links) State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented. SiGe RF switches BiCMOS FET-based SOI PIN diode BiCMOS circuits Radiation hardening by design Transient response Transient radiation effects Extreme environments Mixed-signal circuits Silicon-germanium Single-pole single-throw(SPST) Single-pole four-throw(SP4T) Single-pole double-throw(SPDT) Voltage references Cryogenic temperatures Large-signal linearity Non-linearities Small-signal linearity Large-signal linearity Radiation Single event transient (SET) Total ionizing dose (TID) Radiation Precision voltage reference Bandgap reference (BGR) Bulk FET
172	Modélisation à haut niveau de systèmes hétérogènes, interfaçage analogique /numérique / High level modeling of heterogeneous systems, analog/digital interfacing. Cenni, Fabio 06 April 2012 (has links) L’objet de la thèse est la modélisation de systèmes hétérogènes intégrant différents domaines de la physique et à signaux mixtes, numériques et analogiques (AMS). Une étude approfondie de différentes techniques d’extraction et de calibration de modèles comportementaux de composants analogiques à différents niveaux d’abstraction et de précision est présentée. Cette étude a mis en lumière trois approches principales qui ont été validées par la modélisation de plusieurs applications issues de divers domaines: un amplificateur faible bruit (LNA), un capteur chimique basé sur des ondes acoustiques de surface (SAW), le développement à plusieurs niveaux d’abstraction d’un capteur CMOS vidéo, et son intégration dans une plateforme industrielle. Les outils développés sont basés sur les extensions AMS du standard IEEE 1666 SystemC mais les techniques proposées sont facilement transposables à d’autres langages tels que VHDL-AMS ou Verilog-AMS utilisés en conception de dispositifs mixtes. / The thesis objective is the modeling of heterogeneous systems. Such systems integrate different physical domains (mechanical, chemical, optical or magnetic) therefore integrate analog and mixed- signal (AMS) parts. The aim is to provide a methodology based on high-level modeling for assisting both the design and the verification of AMS systems. A study on different techniques for extracting behavioral models of analog devices at different abstraction levels and computational weights is presented. Three approaches are identified and regrouped in three techniques. These techniques have been validated through the virtual prototyping of different applications issued from different domains: a low noise amplifier (LNA), a surface acoustic wave-based (SAW) chemical sensor, a CMOS video sensor with models developed at different abstraction levels and their integration within an industrial platform. The flows developed are based on the AMS extensions of the SystemC (IEEE 1666) standard but the methodologies can be implemented using other Analog Hardware Description Languages (VHDL-AMS, Verilog-AMS) typically used for mixed-signal microelectronics design. Flot Modélisation comportementale Modèle de représentation d'état Modèle d'ordre réduit Modèle de calcul (MoC) OSCI SystemC AMS VHDL-AMS Capteur d'image Modèle transactionnel (SystemC TLM) Behavioral Modeling AMS IP reuse State Space Model Reduced Order Modeling Model of Computation (MoC) OSCI SystemC AMS VHDL-AMS System Identification Image Sensor

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Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications

Modélisation à haut niveau de systèmes hétérogènes, interfaçage analogique /numérique / High level modeling of heterogeneous systems, analog/digital interfacing.