No description available.

Aluminum was deposited onto both Teflon AF and Parylene AF surfaces by chemical vapor deposition of trimethylaluminum. This work shows that similar thin film (100 Angstroms) aluminum oxide adlayers form on both polymers at the low temperature dosing conditions used in the studies. Upon anneal to room temperature and above, defluorination of the polymer surfaces increased and resulted in fluorinated aluminum oxide adlayers; the adlayers were thermally stable to the highest temperatures tested (600 K). Angle-resolved spectra showed higher levels of fluorination toward the polymer/adlayer interface region. Copper films were also deposited at low temperature onto Teflon AF using a copper hexafluoroacetylacetonate-cyclooctadiene precursor. Annealing up to 600 K resulted in the loss of precursor ligands and a shift to metallic copper. As with aluminum adlayers, some polymer defluorination and resulting metal (copper) fluoride was detected. Parylene AF and polystyrene films surfaces were modified by directly dosing with water vapor passed across a hot tungsten filament. Oxygen incorporation into polystyrene occurred exclusively at aromatic carbon sites, whereas oxygen incorporation into parylene occurred in both aromatic and aliphatic sites. Oxygen x-ray photoelectron spectra of the modified polymers were comparable, indicating that similar reactions occurred. The surface oxygenation of parylene allowed enhanced reactivity toward aluminum chemical vapor deposition. Silicon-carbon (Si-Cx) films were formed by electron beam bombardment of trimethylvinylsilane films which were adsorbed onto metal substrates at low temperatures in ultra-high vacuum. Oxygen was also added to the films by coadsorbing water before electron beam bombardment; the films were stable to more than 700 K, with increasing silicon-oxygen bond formation at elevated temperatures. Copper metal was sputter deposited in small increments onto non-oxygenated films. X-ray photoelectric spectra show three-dimensional copper growth (rather than layer-by-layer growth), indicating only weak interaction between the copper and underlying films. Annealing at elevated temperatures caused coalescence or growth of the copper islands, with spectra indicating metallic copper rather than copper oxide.

No description available.

Die vorliegende Arbeit befasst sich mit neuartigen Kupfer(I)- und Ruthenium(II)-komplexen und deren Verwendung als CVD-/ALD-Precursoren. Die Synthese Lewis-Basen-stabilisierter Kupfer(I)-β-Diketonat- bzw. -Carboxylat-Komplexe des Typs [LnMX] (M = Cu(I), X = Acetylacetonat, Iminopentenolat, Carboxylat; L = Phosphan PR3, Phos-phit P(OR)3; R = einbindiger, organischer Rest) standen hierbei im Vordergrund. Verbin-dungen des Typs [(PR3)MX] dienten als Ausgangsverbindungen zur Darstellung einkerni-ger Komplexe mit σ Donorliganden. Durch die Wahl der Lewis-Base sowie des β-Diketonato- bzw. Carboxylato-Fragmentes war es möglich, Einfluss auf die Eigenschaften der erhaltenen Komplexe zu nehmen. Somit waren auch die Untersuchung der thermischen Eigenschaften sowie das Abscheideverhalten der Komplexe während der MOCVD zu ana-lysieren. Thermogravimetrische Untersuchungen bzw. MOCVD-Versuche liessen Rück-schlüsse auf die Eignung der Komplexe des Typs [(PR3)MX] zur Abscheidung elementa-ren Kupfers zu. Des Weiteren wurde die Eignung von Ruthenium-Komplexen des Typs RuX2 (X = substituierte Cyclopentadienyle, 2,4-Dimethylpentadienyl, 4-Methylpent-3-en-2-on-yl) zur Erzeugung von elementaren bzw. oxidierten Rutheniums während MOCVD-Versuchen untersucht. Vorhergehende thermische Untersuchungen an den synthetisierten Komplexen liessen erste Rückschlüsse auf deren Eigenschaften zu. Da der Dampfdruck der für CVD-Zwecke eingesetzten Precursoren besonders interessant ist, wurden diese für die verwendeten Ruthenium-Komplexe bestimmt und sowohl untereinander als auch mit Lite-raturwerten verglichen. Ausgewählte Ruthenium-Komplexe wurden zur Erzeugung metal-lischer oder oxidischer Schichten während MOCVD-Versuchen eingesetzt.

No description available.

Increase in demand for uniform ceramic coatings on larger industrial components have led to a need for a PP-MOCVD coating system scale up. The objective of this thesis is to develop a fully functional coating system operating in the PP-MOCVD regime that is able to deposit thin film ceramic coatings on commercial or industrial components with complex 3D geometries. This can be achieved by applying engineering and vacuum science theories, coupled with the established fundamentals of PP-MOCVD. A larger system was designed and assembled around the boundaries set by the dimensions and geometry of a stainless steel water pump impellor acting as the base substrate. Most of the components were sourced off the shelf from vacuum and fluid specialists. Components which were unavailable for various reasons were designed, and machined in-house by the departmental workshop. Initial test depositions were conducted using small stainless steel disk substrates, heated using a resistive heater similar to the one utilised on the research scale system. The test depositions were performed with the heater and substrate combination placed in strategic locations. This is to test the overall uniformity of precursor flux in the chamber volume. The resulting coating uniformity on the disk surfaces were fair but problems such as the large collection of unreacted precursor on the chamber viewport and valve timing issues had to be addressed. Before making any improvements to the system, each of the process areas leading to a successful deposition needed to be understood. Five process areas were developed: ‘Liquid Delivery’, ‘Atomization’, ‘Evaporation’, ‘Transport and Reactor Geometry’, and ‘Droplet Management’. Each of the process areas were analysed individually and changes were made to push for a maximum evaporation efficiency. xviii The improved system provided opportunities to perform depositions that were once not possible for PP-MOCVD. Two sets of deposition tests were designed and conducted. Firstly, the improvements were justified with a series of depositions using flat stainless steel plates with dimensions 65x65x5mm. The other set of 3D case study depositions involve observing the effects of the operational parameters of PP-MOCVD on the uniformity and penetration depths of the coatings into different sized macro blind trenches. Five geometric setup conditions were used to justify the improvements made to the system. These are: ‘Substrate positioned in the direct line of spray’, ‘Use of an unheated receptor’, ‘Use of a heated receptor’, ‘Use of an unheated receptor with a non-axial substrate setup’, and “Choked Flow’. As expected, the uniformity of the coatings on both sides of the plate varied significantly when the substrate is placed over the line of sight of the precursor spray. Similarly, the coating produced under the induced choked flow condition resulted in low conformality. The introduction of an unheated receptor plate resulted in an increase in uniformity on both sides of the plate. Further prove that PP-MOCVD is geometry independent is provided by the deposition made with the non-axial substrate placement resulting in a coating of similar result to the unheated receptor. The use of a heated receptor provided a source for a secondary evaporation of the larger precursor droplets collected resulting in an increase in coating thickness while maintaining good conformality. The effects of temperature, pressure, injection volume, and concentration were explored in the final case study. With maximum depths of 50mm, the macro blind trenches has an aspect ratio of 1:1 and cross-sectional areas of 3x3mm, 9x9mm, and 15x15mm. The final results show that as the temperature rises, the depth penetrated into the trench decreases. This could be due to the change in rate limiting steps as homogeneous reactions begin to increase at higher temperatures. Similar trends were observed with increasing pressure. As the pressure difference between the volume of the trenches and the rest of the chamber decreases, the push needed to xix force the precursor down the trench also decreases, resulting in less depth penetration. The effects of injection volume and concentration observed, can be explained by how much precursor molecules are present during one pulse cycle. The more that is available at any given time, the more likely a reaction will occur and deeper the penetration will get. Of course a ceiling or a limit exists where the molecules in the chamber will get evacuated without being reacted. The future work made possible as a result of the scaled up system are proposed. These include a scale up of the operational parameters to suit any given substrate geometry, improvements to the heating source to achieve greater thermal uniformity, further improvements to the overall system accessibility, and performing other depositions using different substrate materials and precursor types.

Current leakage in GaN thin films limits reliable device fabrication. A variety of Ga and N rich MBE GaN thin films grown by Rf, NH3, and Rf+ NH3, are examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on diodes, and CAFM measurements will investigate the microstructure of conduction in GaN thin films. With CAFM, enhanced conduction has been shown to decorate some extended defects and surface features, while CAFM spectroscopy on a MODFET structure indicates a correlation between extended defects and field conduction behavior at room temperature. A remedy for poor conduction characteristics is presented in molten KOH etching, as evidenced by CAFM measurements, Schottky diodes, and MODFET's. The aim of this study is to identify anomalous conduction mechanisms, the likely cause of anomalous conduction, and a method for improving the conduction characteristics. Keywords: 111-Nitride, 111-V, Gallium Nitride, GaN, Electrical Properties, Conduction, Conductivity, Mobility, Hall Measurements, Resistivity, Schottky Diode, Modulation Doped Field Effect Transistor (MODFET), Conductive Atomic Force Microscopy (AFM), Defects, Molten Potassium Hydroxide (KOH) etching, Silvaco, Atlas, and Illumination.

The unique properties, such as large direct bandgap, excellent thermal stability, high μH × ns, of III-nitrides make them ideal candidates for both optoelectronic and high-speed electronic devices. In the past decades, great success has been achieved in commercialization of GaN based light emitting diodes (LEDs) and laser diodes (LDs). However, due to the lack of native substrates, thin films grown on sapphire or SiC substrates have high defect densities that degrade the device performance and reliability. Conventional epitaxy lateral overgrowth (ELO) can reduce dislocation densities down to ∼10-6 cm-2 in the lateral growth area, but requires ex situ photolithography steps. Hence, an in situ method using a SiNx interlayer (nano-scale ELOG) has emerged as a promising technique. The GaN templates prepared by this method exhibit a very low dislocation density (low-10-7 cm-2) and excellent optical and electrical properties. As a cost, such high quality GaN templates containing SiN, nanonetworks are not suitable for heterojunction field effect transistor (HFET) applications due to degenerate GaN:Si layer which serves as parallel conduction channel. This dissertation discusses the growth of low dislocation density GaN templates, by using the in situ SiNx nanonetwork for conductive templates, and the AIN buffer for semi-insulating templates. On SiN x nanonetwork templates, double-barrier RTD and superlattice (SL) exhibited negative differential resistances. Moreover, the injection current of Blue LEDs (450 nm) was improved ∼30%. On semi-insulating GaN templates, nearly lattice matched AlInN/AIN/GaN HFETs were successfully demonstrated and exhibited ∼ 1600 cm2/Vs and 17 600 cm2/Vs Hall mobilities at 300 K and 10 K, respectively. Those mobility values are much higher than literature reports and indicate that high quality HFETs can be realized in lattice matched AlInN/AIN/GaN, thereby solving the strain related issue. The attempt to use InGaN as the 2DEG channel has also been successfully implemented. A Hall mobility (1230 cm2/Vs) was achieved in a 12 nm InGaN channel HFET with AlInGaN barrier, which demonstrates the viability of InGaN channel HFETs.

Avec l'augmentation accrue du nombre de fonctions embarquées directement au dessus du circuit intégrés, les capacités Métal Isolant Métal (MIM) sont devenues des composants essentiels en microélectronique. Pour permettre une augmentation de la densité d'intégration des composants, des matériaux à forte permittivité ou high κ sont utilisés comme diélectriques. Cet isolant doit satisfaire plusieurs critères: une forte valeur de capacité surfacique, de faibles courants de fuite ainsi qu'une très bonne stabilité de la capacité surfacique avec la tension appliquée (linéarité en tension). Cependant, aucun n'est parvenu à satisfaire tous les critères, ce qui nécessite d'autres approches comme l'utilisation d'oxyde en structures multicouches ou alliées. De plus, la linéarité en tension des capacités est mal maîtrisée et son origine mal comprise. Ainsi, nous avons tout d'abord étudié le rôle du matériau d'électrode (TiN, Pt, WSi2,3 et WSi2,7) et de son interface avec l'oxyde d'yttrium déposé par MOCVD avec ou sans assistance plasma sur les performances électriques. On observe une dépendance de la linéarité en tension selon le matériau d'électrode utilisée. Un modèle double couche a été proposé pour décrire la non linéarité des capacités MIM en tension. Puis, différentes structures bicouches, multicouches ou alliées ont été étudiées (LaAlO3/Y2O3, structures à base de HfO2 et Al2O3, SrTiO3/Y2O3). Les bicouches SrTiO3/Y2O3 ont permis l'obtention d'une valeur de capacité surfacique de 10 fF/µm² et de minimiser la non-linéarité (paramètre α de -750 ppm/V²).

Les films de ZrO2 pur sont déposés par MOCVD (Metal-Organic Chemical Vapor Deposition) en variant de nombreux paramètres du processus. L'influence des conditions de dépôt sur l'évolution de la microstructure (morphologies, structure cristalline/phase, texture et contrainte résiduelle) a été étudiée et clarifiée. Par des analyses approfondies des résultats expérimentaux, trois mécanismes typiques de croissance de dépôt de ZrO2 ont été proposées. Les contraintes de croissance de compression sont en relation directe avec la diffusion atomique et la quantité d'espèces piégées dans les films. La formation de la texture cristallographique est complexe et deux types de textures ont été analysées dans la phase tétragonale : la texture de fibre {1 1 0}t est contribuée par l'effet superplastique des nano-cristallites de ZrO2 et par la contrainte de croissance de compression ; tandis que la morphologie en facette est due à la croissance concurrentielle de différents plans cristallographiques. La stabilisation de la phase tétragonale de ZrO2 a été analysée et discutée. En plus de la taille critique des cristallites, la stabilisation de la phase tétragonale est favorisée par deux autres mécanismes : la grande quantité des défauts cristallins et la morphologie des cristallites.