Techn. Hochsch., Diss., 2002--Aachen.

III-nitride nanowires (NWs) have been recognized as efficient photoelectrochemical (PEC) devices due to their large surface-to-volume ratio, tunable bandgap, and chemical stability. Doping engineering can help to enhance the PEC performance further. Therefore, addressing the effects of Si and Mg doping on the III-nitride NW photoelectrodes is of great interest. In this study, doping levels of NWs were tuned by the dopant effusion cell temperature of the molecular beam epitaxy (MBE) growth. The successful doping of the III-nitride NWs was confirmed using photoluminescence (PL), Raman spectroscopy, and open circuit potential (OCP) measurements. The ionized dopant concentrations of Si-doped InGaN/GaN NWs were systematically quantified by electrochemical impedance studies (EIS). Due to the three dimensional surfaces of NWs, modified Mott-Schottky formulas were induced to improve the accuracy of ionized dopant concentrations. The highest dopant concentration of Si-doped InGaN NWs can reach 2.1x1018 cm-3 at Tsi = 1120 oC. Accordingly, the estimated band edge potentials of the tested NWs straddled the redox potential of water splitting. The PEC performance of these devices was investigated by linear scan voltammetry (LSV), chronoamperometry tests, and gas evolution measurements. The results were consistent with the quantified dopant concentrations. The current density of n-InGaN NWs doped at TSi = 1120 oC was nine times higher than the undoped NWs. Additionally, the doped NWs exhibited stoichiometric hydrogen and oxygen evolution. By doping Mg into InGaN and GaN segments separately, the p-InGaN/p-GaN NWs demonstrated improved PEC performance, compared with undoped-InGaN/p-GaN and n-InGaN/n-GaN NWs. The p-InGaN/p-GaN NWs exhibited a highly stable current density at ~-9.4 mA/cm2 for over ten hours with steady gas evolution rates (~107 μmol/cm2/hr for H2) at near a stoichiometric ratio (H2: O2~ 1.8:1). This study demonstrated that optimizing the doping level and appropriate band engineering of III-nitride NWs is crucial for enhancing their PEC water splitting performance.

京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第18445号 / 理博第4005号 / 新制||理||1577(附属図書館) / 31323 / 京都大学大学院理学研究科物理学・宇宙物理学専攻 / (主査)教授 前野 悦輝, 教授 石田 憲二, 教授 田中 耕一郎 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DFAM

京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第18772号 / 理博第4030号 / 新制||理||1581(附属図書館) / 31723 / 京都大学大学院理学研究科物理学・宇宙物理学専攻 / (主査)教授 川上 則雄, 教授 田中 耕一郎, 教授 松田 祐司 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM

The rich phase diagram of transition metal oxides essentially roots in the many body physics arising from strong Coulomb interactions within the underlying electron system. Understanding such electronic correlation effects remains challenging for modern solid state physics, therefore experimental data is required for further progress in the field. For this reason, spectroscopic investigations of prototypical correlated materials are the scope of this thesis. The experimental methods focus on photoelectron spectroscopy, and the test materials are the correlated metal SrVO\(_3\) and the Mott insulator LaTiO\(_3\), both of which are fabricated as high quality thin films. In SrVO\(_3\) thin films, a reduction of the film thickness induces a dimensional crossover from the metallic into the Mott insulating phase. In this thesis, an extrinsic chemical contribution from a surface over-oxidation is revealed that emerges additionally to the intrinsic change of the effective bandwidth usually identified to drive the transition. The two contributions are successfully disentangled by applying a capping layer that prevents the oxidation, allowing for a clean view on the dimensional crossover in fully stoichiometric samples. Indeed, these stoichiometric layers exhibit a higher critical thickness for the onset of the metallic phase than the bare and therefore over-oxidized thin films. For LaTiO\(_3\) thin films, the tendency to over-oxidize is even stronger. An uncontrolled oxygen diffusion from the substrate into the film is found to corrupt the electronic properties of LaTiO\(_3\) layers grown on SrTiO\(_3\). The Mott insulating phase is only detected in stoichiometric films fabricated on more suitable DyScO\(_3\) substrates. In turn, it is demonstrated that a \(controlled\) incorporation of excess oxygen ions by increasing the oxygen growth pressure is an effective way of \(p\) doping the material which is used to drive the band filling induced Mott transition. Gaining control of the oxygen stoichiometry in both materials allows for a systematic investigation of correlation effects in general and of the Mott transition in particular. The investigations are realized by various photoelectron spectroscopy techniques that provide a deep insight into the electronic structure. Resonant photoemission not only gives access to the titanium and vanadium related partial density of states of the valence band features, but also shows how the corresponding signal is enhanced by tuning the photon energy to the \(L\) absorption threshold. The enhanced intensity turns out to be very helpful for probing the Fermi surface topology and band dispersions by means of angular-resolved photoemission. The resulting momentum resolved electronic structure verifies central points of the theoretical description of the Mott transition, viz. the renormalization of the band width and a constant Luttinger volume in a correlated metal as the Mott phase is approached. / Das reichhaltige Phasendiagramm von Übergansmetalloxiden ist im Wesentlichen auf Aspekte der Vielteilchenphysik zurückzuführen, welche durch starke Coulomb Wechselwirkungen im zugrundeliegenden Elektronensystem auftreten. Die Beschreibung solcher Korrelationseffekte stellt immernoch eine Herausforderung für die moderne Festkörperhysik dar, wobei für weitere Fortschritte experimentelle Daten nötig sind. Aus diesem Grund beschäftigt sich diese Arbeit mit spektroskopischen Untersuchungen an prototypischen korrelierten Materialien. Die experimentellen Methoden fokussieren sich dabei auf die Photoelektronenspektroskopie. Diese wird auf das korrelierte Metall SrVO\(_3\) und dem Mott Isolator LaTiO\(_3\) angewandt, welche beide als dünne Filme in hoher Qualität hergestellt werden. Eine Verkleinerung der Schichtdicke kann in SrVO\(_3\)-Dünnfilmen einen dimensionsgetriebenen Übergang von der metallischen in die Mott-isolierende Phase induzieren. In dieser Arbeit konnte der extrinsische Beitrag einer Oberflächenoxidation identifiziert werden, der zusätzlich zu den intrinsischen Veränderungen der effektiven Bandbreite, die für gewöhnlich als Grund für den Phasenübergang angeführt werden, auftritt. Durch das Aufbringen einer Deckschicht wird die Oxidation verhindert. So kann der dimensionsinduzierte Übergang ohne extrinsische Einflüsse in stöchiometrischen Proben untersucht werden, die tatsächlich eine höhere kritische Schichtdicke für das Einsetzen des metallischen Verhaltens aufweisen als die freiliegenden und damit überoxidierten Dünnfilme. Bei LaTiO\(_3\)-Dünnfilmen ist die Tendenz zur Überoxidation noch stärker. Eine unkontrollierte Diffusion von Sauerstoff aus dem Substrat in den Film verfälscht die elektronischen Eigenschaften von LaTiO\(_3\)-Schichten, die auf SrTiO\(_3\) gewachsen werden. Die Mott-isolierende Phase kann nur in stöchiometrischen Filmen stabilisiert werden, die auf geeigneteren DyScO\(_3\) Substraten hergestellt werden. Dahingegen kann eine \(kontrollierte\) \(p\)-Dotierung durch eine Erhöhung des Sauerstoffdrucks während des Wachstumsprozesses angewendet werden um den bandfüllungsinduzierten Mott-Übergang zu treiben. Die Kontrolle der Sauerstoffstöchiometrie in beiden Materialien erlaubt eine systematische Untersuchung von Korrelationseffekten im Allgemeinen und des Mott-Übergangs im Speziellen. Dies wird durch die Anwendung diverser spezialisierter Techniken der Photoelektronenspektroskopie realisiert, welche weitreichende Einblicke in die elektronische Struktur gewähren. Resonante Photoelektronenspektroskopie macht nicht nur die partielle Zustandsdichte mit Titan- und Vanadium-Charakter im Valenzband zugänglich, sondern zeigt auch, wie stark die zugehörigen Signale an der \(L\)-Absorptionskante verstärkt werden. Diese Intensitätsverstärkung erweist sich zudem als hilfreich bei der Untersuchung der Fermiflächentopologie und Banddispersion mittels winkelaufgelöster Phototemission. Die daraus gewonnenen Erkenntnisse zur impulsaufgelösten, elektronischen Struktur bestätigen zentrale Punkte der theoretischen Beschreibung des Mott-Übergangs, nämlich eine Renormierung der Bandbreite und ein konstantes Luttingervolumen in einem korrelierten Metall, welches sich der Mott-Phase annähert.

Cette thèse présente l'étude de la coexistence métal isolant dans deux systèmes très différents pour la communauté scientifique de la matière condensée : l'isolant topologique 3D Bi2Te3 et le composé prototype de la transition de Mott V2O3. Ces deux systèmes ont été étudiés par des techniques basées sur la spectroscopie de photoélectrons. La première technique utilisée est le TR-ARPES (time and angle resolved photoemission spectroscopy), avec une résolution temporelle de 80 fs, appliquée à l'isolant topologique 3D Bi2Te3 pour distinguer la dynamique ultra-rapide des états métalliques de la surface de celle des états isolants du volume. Cette mesure a permet de comprendre les différents mécanismes de diffusion entre la surface et le volume, ainsi que l'amélioration de la relaxation du cône de Dirac par la préexistence à la sous-surface d'une bande de flexion. La seconde technique utilisée dans cette thèse est le SPEM (scanning photoelectron microscopy), avec une résolution spatiale de 150 nm, permettant d'étudier la coexistence des domaines métalliques et isolants à la transition de Mott dans V2O3 ; cette coexistence a pour origine le caractère 1 er ordre de la transition. La mesure montre une coexistence métal-isolant dans le Cr-dopé : les domaines métalliques sont dus à des centres de nucléations < 150 nm et la forme des domaines est clairement liée à la forme des marches de clivage. / This thesis presents the study of metal-insulator coexistence in two very different systems for the scientific community of condensed matter: the 3D topological insulator Bi2Te3 and the prototype compound of the Mott transition V2O3. Both systems were studied by techniques based on photoelectron spectroscopy. The first technique is the TR- ARPES (time and angle resolved photoemission spectroscopy), with a temporal resolution of 80 fs, applied to the 3D topological insulator Bi2Te3 to distinguish the ultrafast dynamics of metallic surface states from that of the insulating bulk states. This allows us to understand the different mechanisms of scattering between the surface and the bulk, as well as the amelioration on the Dirac cone relaxation due to the preexistence of subsurface band bending. The second technique used in this thesis is the SPEM (scanning photoelectron microscopy), with a spatial resolution of 150 nm, which was used to study the coexistence of metallic and insulating domains at the Mott transition on V2O3. This coexistence takes its origin from the first order character of the transition. The measurement shows the metal-insulator coexistence on the Cr-doped: metal domains are due to nucleation centers < 150 nm and the shape of the domains is clearly linked to the shape of the cleavage steps.

Orientadores: Harry Westfahl Junior, Amir Ordacgi Caldeira / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-10T23:02:41Z (GMT). No. of bitstreams: 1 Fernandes_RafaelMonteiro_D.pdf: 6829160 bytes, checksum: 4dfae2ffd4b06c5c3c1f89f399700913 (MD5) Previous issue date: 2008 / Resumo: Um dos objetivos centrais das Ciências Naturais é relacionar as estruturas dos mais diversos sistemas com as funções particulares que os caracterizam. Por exemplo, no que se refere a materiais, sejam eles sintéticos ou biológicos, a ciência está constantemente buscando a predição de diferentes propriedades macroscópicas a partir do conhecimento das suas estruturas mi- croscópicas. Nesta tese, investigamos as propriedades magnéticas e de transporte de sistemas que apresentam interações competitivas em diferentes escalas de comprimento. Como resultado desta competição, surge um estado termodinâmico caracterizado por um parâmetro de ordem modulado, dando origem a uma série de con.gurações espacialmente inomogêneas. A termo- dinâmica destes estados modulados pode ser descrita pelo chamado modelo de Brazovskii, que prevê uma transição de primeira ordem, induzida pelas .utuações do parâmetro de ordem, entre a fase homogênea e a fase modulada. Há uma vasta gama de sistemas encontrados na Natureza que parecem se encaixar nesta descrição de Brazovskii, compreendendo estruturas tão díspares quanto cristais líquidos e condensados de píons em estrelas de nêutrons. No presente trabalho, investigamos dois sistemas físicos particulares. Motivados pela rica variedade de domínios obser- vados experimentalmente em filmes finos magnéticos, estudamos as propriedades magnéticas de blocos ferromagnéticos dipolares com dimensões finitas e condições de contorno não-periódicas. Desenvolvendo uma modelagem baseada na solução da Hamiltoniana de Brazovskii, pudemos explicar, de maneira inédita e consistente, a estrutura de domínios magnéticos dos filmes finos de MnAs:GaAs, um promissor candidato a aplicações no campo da spintrônica. Além disso, estabelecemos uma relação clara entre o fenômeno de reorientação magnética e a mudança na forma das curvas de histerese observada nesses filmes. O segundo tipo de sistemas que in- vestigamos foram os isolantes de Mott, cujas propriedades de transporte foram determinadas a partir do modelo de redes de resistores correlacionados. Considerando que a transição de Mott térmica pertence à classe de universalidade de Ising, mostramos que a condutividade macroscópica depende não apenas da magnetização, mas também da densidade de energia, dando origem a um comportamento de crossover. Através destes resultados, lançamos luz sobre a aparente e misteriosa incoerência entre as previsões teóricas e as medidas experimentais recentes envolvendo isolantes de Mott não-dopados. Prosseguindo para as fases inomogêneas dos isolantes de Mott dopados, estudamos a condutividade macroscópica das mesofases eletrônicas com ordenamento de carga esmético e nemático, as quais são encontradas nos niquelatos e nos cupratos, respectivamente. Inspirados nos conceitos da Física dos cristais líquidos, expressamos de forma bastante intuitiva a relação entre as propriedades de transporte e a termodinâmica das mesofases eletrônicas anisotrópicas, descrita pelo modelo de Brazovskii / Abstract: Natural Sciences is to relate the structures of systems to example, in what concerns materials, either synthetic or for the prediction of different macroscopic properties from the knowledge of their microscopic structure. In this thesis, we investigate the magnetic and transport properties of systems with competing interactions in distinct length scales. As a result of such a competition, there is a thermodynamic state characterized by a modulated order parameter, originating a set of spatially inhomogeneous con½gurations. The thermodynamics of these modulated states can be described by the so-called Brazovskii model, which predicts a fluctuation induced first order transition from the homogeneous phase to the modulated phase. There is a large diversity of systems for which the Brazovskii description seems suitable, including utterly disparate structures such as liquid crystals and pion condensates in neutron stars. In the present work, we investigate two particular physical systems. Motivated by the rich variety of domains experimentally observed in magnetic thin films, we study the magnetic properties of ferromagnetic dipolar slabs with finite dimensions and non-periodic boundary conditions. After developing a model based on the solution of the Brazovskii Hamiltonian, we were able to explain, in a consistent and novel way, the magnetic domain structures of MnAs:GaAs thin films, which are promising candidates for spintronics devices. Moreover, we established a clear connection between the film's magnetic reorientation and the experimentally observed change in the hysterisis loops shape. The second class of systems we investigated were the Mott insulators, whose transport properties were determined from the correlated resistor network model. After considering that the finite temperature Mott transition belongs to the Ising universality class, we showed that the macroscopic conductivity depends not only on the magnetization, but also on the energy density, giving rise to crossover behaviour. Using these results, we shed light upon the apparent and mysterious inconsistency between the theoretical predictions and the experimental measurements regarding undoped Mott insulators. Proceeding to the inhomogeneous phases of doped Mott insulators, we studied the macroscopic conductivity of electronic mesophases with smectic and nematic charge ordering, which are found in the nickelates an in the cuprates, respectively. Inspired by the concepts from the Physics of liquid crystals, we expressed in an intuitive way the connection between the transport properties and the thermodynamics of anisotropic electronic mesophases described by the Brazovskii model / Doutorado / Física da Matéria Condensada / Doutor em Ciências

No description available.

Cette thèse est consacrée à l'étude des phases de Mott isolantes des systèmes unidimensionnels d'atomes froids fermioniques à plusieurs composantes. La première partie de ce travail consiste en l'étude du modèle des atomes froids de type alcalinoterreux de spin nucléaire I=1/2. Ces atomes possèdent un état excité métastable offrant à ces atomes un degré de liberté orbital supplémentaire et en fait des fermions à quatre composantes. L'étude est menée au demi-remplissage, aux forts et aux faibles couplages par des moyens analytiques (théorie conforme, bosonisation, refermionisation, groupe de renormalisation); elle conduit à un diagramme de phase très riche. Il comporte sept phases isolantes de Mott dont trois sont particulièrement intéressantes, car elles présentent un ordre caché qui s'apparente à la physique de Haldane de la chaîne antiferromagnétique de spin-1. Ces conclusions sont mises en regard avec des simulations numériques exécutées avec l'algorithme du groupe de renormalisation de la matrice densité (DMRG), pour un régime de couplages intermédiaires. La comparaison montre une continuité adiabatique entre les différents régimes de couplages. Une étude similaire d'un modèle d'atomes froids de spin-3/2 met en évidence la physique de Haldane dans le secteur de charge des degrés de liberté, avec pour modèle effectif une chaîne de (pseudo-)spin-1. L'étude nous permet également l'investigation des propriétés de température nulle de la chaîne bilinéaire et biquadratique de Heisenberg SO(5). On montre qu'elle présente deux phases gappées : l'une dimerisée et l'autre possédant une symétrie cachée (Z_2xZ_2)² et des états de bords de spin-3/2, séparées par un point critique appartenant à la classe d'universalité SO(5)_1. Enfin, une étude de systèmes d'atomes froids de spins demi-entiers (à 2N composantes) généralise les résultats obtenus pour les spins-3/2. Cela nous conduit en particulier à mettre en évidence un effet pair/impair suivant N, en tout point similaire à l'effet pair/impair des chaînes de spin, découvert par Haldane en 1983. / This thesis is devoted to the investigation of the Mott insulating phases arising in onedimensionalmulticomponent fermionic cold atoms systems. The first part of this work isthe study of a model with alkaline-earth cold atoms with nuclear spin I = 1/2. Thoseatoms enjoy an additional orbital degree of freedom, due to the presence of a metastableexcited state ; they thus have a total of four components. Our investigation is carried athalf-filling, at strong and at weak couplings by means of analytic methods (conformaltheory, bononization, refermionization, renormalisation group). We found that the zerotemperature phase diagram of the system is very rich : it contains seven Mott insulatingphases, among which three are particularly interesting, since they display a hiddenorder, related to the Haldane physics of the antiferromagnetic spin-1 Heisenberg chain.Our conclusions are checked against numerical simulations, that were carried out with thedensity matrix renormalization group (DMRG) algorithm for intermediate couplings. Thecomparison shows an adiabatic continuity between the different regimes. A similar studyfor a model of cold atoms with hyperfine spin-3/2 highlights the Haldane physics in thecharge sector of the degrees of freedom, with an effective model given by an antiferromagneticpseudo-spin-1 chain. This analysis provides us an opportunity to investigate thezero temperature properties of the SO(5) bilinear-biquadratic Heisenberg chain. We showthe presence of two gapped phases : one is dimerized, the other has a hidden symmetry(Z2 × Z2)2 and spin-3/2 edge states, and they are separated by a critical point that belongsto the SO(5)1 universality class. Finally, we investigate half-integer hyperfine spincold atoms systems with 2N components which generalized the results obtained for thehyperfine spin-3/2 model. This leads us to find an even/odd effect according to the parityof N, very similar to the even/odd effect of spin chains, discovered by Haldane in 1983.

Les oxydes de métaux de transition (Ti, Fe, Mn, Cu, etc) présentent une multitude de fonctionnalités tout en cristallisant dans un nombre réduit de structures. C’est le cas par exemple dans la famille des pérovskites qui arborent de nombreux ordres électroniques (isolants, métaux, supraconducteurs) et magnétiques (ferro- et antiferromagnétiques). La compatibilité structurale de ces différents composés permet de les combiner au sein d'hétérostructures multifonctionnelles mais aussi, dans certains cas, de faire émerger de nouvelles propriétés aux interfaces. Un exemple typique découvert en 2004 est celui du gaz électronique bidimensionnel se formant à l'interface entre deux isolants de bande, LaAlO₃ et SrTiO₃ .S’inspirant de ce résultat majeur, ce travail de thèse a pour but de générer de nouvelles phases électroniques et magnétiques aux interfaces, non à partir d'isolants de bande mais d'isolants de Mott et d'isolants à transfert de charge. A l'interface entre ces deux types de composés, l’alignement de bande est rendu plus complexe par la présence de fortes corrélations électroniques.Ainsi, les reconstructions d’interface peuvent donner lieu à une déstabilisation de l'état fondamental, et à la génération de nouvelles phases magnétiques, conductrices ou supraconductrices absentes du diagramme de phase du matériau massif.Dans un premier temps, lors de ce travail nous avons synthétisé, par ablation laser pulsé des couches minces d'isolants de Mott, les titanates de terre-rare (RTiO₃ ). Nous avons caractérisé leurs propriétés magnétiques, optiques et électroniques.Dans un second temps, nous avons également optimisé des couches minces d’isolants à transfert de charge, les nickelates de terre-rare (RNiO₃ ). Nous avons étudié en détail l’effet du rayon ionique de la terre-rare sur la structure électronique à basse température de ces composés.Le cœur de ce travail de thèse a été l'étude des propriétés de l’interface formée par ces deux constituants via une combinaison de plusieurs techniques de spectroscopie (absorption de rayonnement synchrotron, XAS, dichroïsme linéaire et circulaire, XMCD, et spectroscopie de perte d’énergie, STEM-EELS) en lien avec des calculs ab-initio.Après avoir démontré l’apparition d’une nouvelle phase ferromagnétique dans les nickelates, nous discutons du rôle des corrélations dans les nickelates sur le transfert de charge et sur la reconstruction magnétique, observés à l’interface avec GdTiO₃ .Enfin, nous mettons en évidence la possibilité d’utiliser un paramètre de contrôle externe comme la lumière pour altérer le niveau de covalence dans les nickelates sans modifier la terre-rare. Ces résultats ouvrent la voie à de nouveaux dispositifs tirant partie du contrôle actif du niveau de covalence dans les isolants à transfert de charge. / Transition metal oxides (Ti, Fe, Mn, Cu, etc.) display a multitude of features while crystallizing in a reduced number of structures. This is the case for example of perovskites which exhibit many electronic (insulators, metals, superconductors) and magnetic (ferro- and antiferromagnetic) orders. Their structural compatibility offers a unique playground for combining them in the search for new interfacial properties. A typical example discovered in 2004 is LaAlO₃ and SrTiO₃ whose interface reveals a high-mobility electron gas although the parent constituents are two conventional band insulators.Following-up on this major achievement, this thesis aims at generating new electronic interfacial phases, not from band insulators but rather from Mott and charge transfer insulators. At the interface between these types of compounds, band alignment is made more complex by the presence of strong correlations between electrons.Hence, interfacial reconstructions can destabilize the ground state, and generate new phases absent from the phase diagrams of the two building blocks.Initially, we synthetized, by pulsed laser deposition, a typical Mott insulator, rare earth titanates (RTiO₃ ) in the form of thin layers, which were optimized and characterized on different substrates.Secondly, we also grew charge transfer insulators, rare earth nickelates (RNiO₃ ). We specifically studied the effect of the ionic radius of the rare earth on the electronic structure of these compounds at low temperature.The core of this thesis is to study the interface formed by these two constituents via a combination of spectroscopic techniques (synchrotron radiation-based absorption, XAS, linear and circular dichroism XMCD and energy loss spectroscopy, STEM-EELS) in connection with ab-initio calculations.After demonstrating the emergence of a new ferromagnetic phase in nickelates, absent of the bulk phase diagram, we discuss in particular the role of correlations in nickelates on the charge transfer and magnetic reconstruction, observed at the interface with GdTiO₃ .Finally, we will propose a new external knob, light, to alter the level of covalence in nickelates without changing the rare earth. These results open the way for new devices taking advantage of the active control of the level of covalence in charge transfer insulators.