In this thesis the author describes the use of transient grating techniques to study the transport of electrons and holes perpendicular to the layers of a GaAs/AlGaAs multiple quantum well (MQW).

<p>Asymmetric multiple quantum wells (AMQWs) can provide broad and flat gain spectra. Broadly tunable diode lasers can be realized with AMQW active regions and without the need for antireflection coatings on cleaved facets.</p> <p> This thesis reports the application of AMQW broadly tunable lasers with uncoated facets for Fourier domain and synthesized optical coherence tomography (OCT). A depth resolution of 13 μm in air was obtained with a test bed OCT system that used diffractive optical elements, short external cavities, and AMQW InGaAsP/InP broadly tunable lasers as the light sources for the Fourier domain and the synthesized OCT measurements. The centre wavelengths of the broadly tunable sources were 1550 nm and the tunable ranges were ≤ 117 nm.</p> <p>The features of broad and flat gain spectra of AMQWs also make AMQWs ideal candidates for broad spectral width superluminescent diodes (SLDs). 1300 nm AMQW InGaAsP/InP SLDs were designed and fabricated for application to time domain OCT. For the design of the active region, it was found by simulation of gain and the comparison of two growths that the transition carrier density (TCD) has to be reasonably high to achieve high power SLDs. A transfer matrix method was used to solve for the modes of planar optical waveguides with arbitrary layers and the thicknesses of these layers were optimized with a Marquardt nonlinear fitting method. With the optimization of the optical waveguide and with AMQWs with high TCDs, the output power of SLDs could reach 2 mW with > 90 nm spectral width. It is shown by time domain OCT measurements that the depth resolution of the OCT measurements could reach 7.85 μmin air with double section SLDs.</p> <p>Two dimensional OCT images of a glass cover slip were built with the imageSC function in Matlab™. Image enhancement with blind/not-blind deconvolution was performed based on the measured point spread function (PSF) of the OCT setup. A Richardson-Lucy algorithm was used as the blind deconvolution method and a not-blind version of a Jansson-Van Cittert method was used.</p> / Thesis / Doctor of Philosophy (PhD)

L'innovation de la technologie de pointe et l'exigence du marché électronique se concentrent toujours sur l'électronique bon marché, qui présente une fabrication facile, avec des performances sans cesse améliorées. Les pérovskites hybrides organiques-inorganiques, qui combinent les propriétés des semi-conducteurs organiques et inorganiques, sont des candidats prometteurs pour de futurs dispositifs opto-électroniques. L’énergie de liaison des excitons et la force d'oscillateur sont très élevées dans ces systèmes, ce qui rend possible leurs applications à température ambiante. Dans cette thèse, nous avons étudié des couches minces auto-assemblées de molécules de pérovskite (R-NH3)2PbX4. En modifiant la structure R, des pérovskites avec des propriétés optimisées (propriétés optiques d’émission, rugosité de surface et photostabilité) ont été découvertes. Nous avons aussi développé des méthodes pour fabriquer des cristaux massifs et des nanoparticules de pérovskites, et nous avons créé de nouveaux cristaux de pérovskite mixtes: (RNH3)2PbYxX4-x et AB-(NH3)2PbX4. Des cavités verticales en régime de couplage fort ont été réalisées avec ces matériaux, l’émission du polariton de basse énergie a été observée à température ambiante. / The innovation of advanced technology and the requirement of electronic market are always focusing on low cost electronics, presenting an easy processing and having enhanced performance. Organic-inorganic hybrid perovskites, which combine the properties of organic and inorganic semiconductors, are hopeful candidates for future opto-electronic devices. The exciton binding energies and oscillator strengths are very large in these systems making the applications at room temperature possible. In this thesis, we study the flexibility and photostability of self-assembled two-dimensional layered perovskites (R-NH3)2PbX4. By modifying the R structure, perovskites with optimized photoluminescence efficiency, surface roughness and photostability are discovered. We develop also some methodologies to fabricate crystal bulks and nanoparticles of perovskites, and we create new mixed perovskite crystals: (RNH3)2PbYxX4-x and AB-(NH3)2PbX4. Vertical microcavities containing these new materials and working in the strong coupling regime at room temperature have been realized, the emission of the lower energy polariton is observed.

Since Shuji Nakamura, Hiroshi Amano, and Isamu Akasaki won the 2014 Nobel prize in Physics owing to theircontributions on the invention of efficient blue GaN light emitting diodes, GaN became an even more appealingmaterial system in the research field of optoelectronics. On the other hand, quantum structures or low-dimensionalstructures with properties derived from quantum physics demonstrate superior and unique electrical and opticalproperties, providing a significant potential on novel optoelectronic applications based on the employment of quantumconfinement.   In 2012, our research team at Linköping University utilized pyramid templates, which is an established approach toform quantum structures, to successfully grow GaN pyramids with InGaN hybrid quantum structures, includingquantum wells, quantum wires, and quantum dots. This growth enabled site-controlled pyramids based on selectivearea growth (SAG). After numerous studies on the photoluminescence properties, the mature and controlled growthtechnique was proposed to be adapted for fabrication of AlGaN pyramids on which GaN hybrid quantum structurescan be hosted.   This thesis is dedicated to the subsequent problems of the growth of AlGaN pyramids. It was found that there wasan undesired deposition of a considerable thickness on top the desired AlGaN pyramid with GaN multiple quantumwells. In this thesis, two different directions are explored to find the key solution with a potential of furtheroptimization. On one hand, the growth parameters such as precursors cut-off, carrier gas during cooling, temperatureholding, cooling pressure, III/V ratio, and the possible effect of GaN surfaces are investigated. However, due to theactual inherent properties of the metal-organic chemical vapor deposition reactor used, no promising parameter tuningcan been identified. On the other hand, from post-growth point of view, a KOH aqueous etching solution exhibits apositive result toward removing the undesired deposition. This etching process is suggested to be further optimized toachieve the final goal of eliminating the undesired deposition.

In this thesis experimental samples of multiple quantum wells in the InGaN/GaN structures will be compared using methods of laser spectroscopy. In particular, the optical properties of the samples will be investigated. The samples were prepared under different conditions; therefore one of the aims is to compare them. The knowledge of the influence of preparation enables utilization not only for fundamental research, but also for the construction of radiation sources or scintillation detectors. Measurements of absorption and photoluminescence will be carried out and their dynamic properties will be measured as well. There will be examined the effect of different excitation power and different excitation wavelength on the intensity of photoluminescence. From dynamic properties there will be examined the effect of different excitation wavelength on the lifetime of the absorption and how does temperature influence the lifetime of the photoluminescence. Individual quantities will be compared amongst samples and their suitability for further applications will be discussed.

<p>  </p> <p>Research that seeks to understand and develop the growth of III-nitride materials by molecular beam epitaxy (MBE) is beneficial to a broad range of the device community. MBE and the III-nitrides have been used to develop transistors, diodes, electroacoustic devices, solar cells, LEDs, LDs, intersubband devices, and quantum-cascade lasers. In this work we focus on the growth of III-nitride materials specifically for applications in near-infrared intersubband (NIR ISB) optical devices, however all this work is broadly applicable. </p> <p><br></p> <p>We begin by investigating the reduced indium incorporation in non-polar m-plane InGaN films. We find that InGaN grown on m-plane GaN has an effective activation energy for thermal decomposition of 1 eV, nearly half that reported for similar c-plane films. We produce high quality m-plane In0.16Ga0.84N and utilize it in AlGaN/InGaN devices designed for near-infrared ISB absorption measurements. We continue this work by exploring the growth of low-temperature AlGaN, necessary for these devices. We find that the utilization of an indium surfactant during low-temperature AlGaN growth enhances adatom diffusion, resulting in smoother surface morphologies, sharper interfaces, and reduced defects within the material. This growth method also prevents the anomalous suppression of the AlGaN growth rate, which we link to a reduction in the formation of high-aluminum containing defects. These investigations result in the demonstration of an Al0.24Ga0.76N/In0.16Ga0.84N heterostructure with a conduction band offset large enough to enable NIR ISB transitions.</p> <p><br></p> <p>Lastly, we explore the novel material ScAlN. This material’s large bandgap, large spontaneous polarization, ferroelectricity, and ability to be lattice matched to GaN at ~18% scandium composition make it an ideal candidate for a variety of devices, including NIR ISB devices. We investigate the reported temperature dependence of ScAlN’s <em>c</em>-lattice constant and confirm this dependence is present for high growth-temperature ScxAl1-xN with 0.11 < x < 0.23. We find that this temperature dependence is no longer present below a certain composition-dependent growth temperature. This finding, coupled with observations that samples grown at lower temperatures exhibit lower defect densities, smoother surfaces, and homogeneous chemical compositions suggest that high growth temperatures lead to defect generation that may cause the observed change in lattice parameters. We demonstrate lattice-matched, 50 repeat Sc0.18Al1-xN/GaN heterostructures with ISB absorption in excess of 500 meV with FWHM as little as 45 meV. </p>

The innovation of advanced technology and the requirement of electronic market are always focusing on low cost electronics, presenting an easy processing and having enhanced performance. Organic-inorganic hybrid perovskites, which combine the properties of organic and inorganic semiconductors, are hopeful candidates for future opto-electronic devices. The exciton binding energies and oscillator strengths are very large in these systems making the applications at room temperature possible. In this thesis, we study the flexibility and photostability of self-assembled two-dimensional layered perovskites (R-NH3)2PbX4. By modifying the R structure, perovskites with optimized photoluminescence efficiency, surface roughness and photostability are discovered. We develop also some methodologies to fabricate crystal bulks and nanoparticles of perovskites, and we create new mixed perovskite crystals: (RNH3)2PbYxX4-x and AB-(NH3)2PbX4. Vertical microcavities containing these new materials and working in the strong coupling regime at room temperature have been realized, the emission of the lower energy polariton is observed.

abstract: Multiple quantum well (MQW) structures have been employed in a variety of solid state devices. The InGaAs/GaAs material system is of special interest for many optoelectronic applications. This study examines epitaxial growth and defect creation in InGaAs/GaAs MQWs at its initial stage. Correlations between physical properties, crystal perfection of epitaxial structures, and growth conditions under which desired properties are achieved appear as highly important for the realization and final performance of semiconductor based devices. Molecular beam epitaxy was utilized to grow InGaAs/GaAs MQW structures with a variation in deposition temperature T_dep among the samples to change crystalline and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature T_dep=505&deg;C was found for 20% In composition. The density of 60&deg; primary and secondary dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection, as evaluated by lateral and vertical coherence lengths and diffuse scattering in reciprocal space maps. Likewise, the strength of non-radiative Shockley-Read-Hall recombination increased as deposition temperature was reduced. Elevated deposition temperature led to InGaAs decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering. High available thermal energy increased atomic surface diffusivity and resulted in growth surface instability against perturbations, manifesting in lateral layer thickness undulations. Carriers in structures grown at elevated temperature experience localization in local energy minima.InGaAs/GaAs MQW structures reveal correlation between their crystal quality and optical properties. It can be suggested that there is an optimal growth temperature range for each In composition with high crystal perfection and best physical response. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2014

Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process has been investigated. The zinc diffusion process is implemented using a semi-sealed open-tube diffusion technique. The process has proven to be highly controllable and reproducible by carefully monitoring of the diffusion parameters. Using this technique, isolated p-n junctions exhibiting good I-V characteristics and breakdown voltages greater than 10 V can be selectively defined across a semiconductor wafer. A series of Mach-Zehnder interferometric (MZI) switches/modulators have been designed and fabricated. Monolithic integration of 1x2 and 2x2 MZI switches has been demonstrated. The diffusion process circumvents the need for isolation trenches, and hence optical losses can be significantly reduced. An efficient optical beam steering device based on InGaAsP multiple quantum wells is also demonstrated. The degree of lateral current spreading is easily regulated by controlling the zinc depth, allowing optimization of the injected currents. Beam steering over a 21 microns lateral distance with electrical current values as low as 12.5 mA are demonstrated. Using this principle, a reconfigurable 1x3 switch has been implemented with crosstalk levels better than -17 dB over a 50 nm wavelength range. At these low electrical current levels, uncooled and d.c. bias operation is made feasible. The use of multimode interference (MMI) structures as active devices have also been investigated. These devices operate by selective refractive index perturbation on very specific areas within the MMI structure, and this is again realized using zinc diffusion. Several variants such as a compact MMI modulator that is as short as 350 µm, a robust 2x2 photonic switch and a tunable MMI coupler have been demonstrated.

Entender os processos em superfície/interface de filmes e seus efeitos sobre as propriedades ópticas e elétricas de materiais orgânicos é de grande importância tecnológica. Esta pesquisa descreve a fabricação e caracterização de filmes poliméricos extremamente finos (espessura <10 nm) e homogêneos compostos por camadas de polímero/polieletrólitos e estruturas com modulação de energia ou poços quânticos. O objetivo principal foi o estudo dos processos de transferência de carga e energia em tais estruturas. Os polímeros luminescentes utilizados foram poli(9,9 dioctilfluoreno) (PFO) poli(p-fenileno vinileno (PPV). O PPV foi obtido a partir do precursor poli(cloreto de tetraidrotiofeno de xililideno) (PTHT). A técnica de deposição denominada deposição camada por camada assistida por spin (SA-LbL) foi utilizada para obtenção dos filmes. Medidas de absorbância confirmaram o crescimento linear das camadas para as interfaces polieletrólito/polieletrólito e polímero/polieletrólito. Com o objetivo de entender a transferência do elétron &pi; do polímero conjugado para o polieletrólito, as configurações das estruturas poliméricas foram alteradas através da deposição de diferentes monocamadas de polieletrólito sobre o filme polimérico. Observamos que os elétrons &pi; foram efetivamente transferidos para os polieletrólitos que possuem alta afinidades eletrônica. Este efeito interfere fortemente na absorção bem como nas características de condução do filme polimérico ultrafino. A absorção é restabelecida após a conversão de PTHT em PPV. Medidas de fotoluminescência (PL) em filmes PFO/PPV resultam em curvas de emissão com picos característicos de ambos os polímeros, o que confirma que a técnica SA-LbL permite a deposição de estruturas poliméricas multicamadas. As várias configurações de filmes obtidas elucidaram os processos de transferência que ocorrem em diferentes interfaces, tais como: mudança da sequencia de deposição do polieletrólito, número de camadas duplas PTHT/DBS e a introdução de camadas separadoras. Além disso, um único poço quântico, ou seja, estruturas formadas por uma camada PPV cercada por barreiras de PFO com 10 nm de espessura foram obtidas. Medidas de absorbâcia, PL e excitação mostraram uma eficiente migração estado excitado da barreira de PFO para o PPV (poço). A homogeneidade da imagem confocal, demonstrou um rigoroso controle da camada de cobertura ao nível de um única monocamada e sem contaminação pelos materiais depositados sequencialmente. A microscopia confocal de fluorescência (CFM) e espectroscopia de fluorescência resolvida no tempo (FLIM) foram utilizadas para caracterizar a dinâmica do exciton e o seu confinamento nos poços quânticos. As medidas de CFM demonstraram que excitons que são gerados na barreira de PFO são eficientemente transferidos para o PPV. Além disso, o tempo de decaimento da emissão PFO residual é fortemente reduzido devido a processos de migração concorrentes no poço. O tempo de decaimento de PPV diminui substancialmente para poços com espessuras abaixo de 5 nm como resultado da auto-aniquilação do exciton. Dessa forma, as estruturas de MQW obtidos pela técnica de SA-LbL podem ser usadas para estudar a transferência de energia, efeitos túneis e para a construção de novos dispositivos optoelectrónicos com maior eficiência. / The understanding of surface/interface processes and their effects on optical/electrical properties of organic materials is of strong technological importance. This research describes the fabrication and characterization of extremely thin (thickness <10 nm) and homogeneous multilayered polymeric structures including polymer/poly-electrolyte layers and structures with energy modulation such as quantum well. Our main purpose was the study of charge and energy transfer processes in such energy modulated structures. The luminescent polymers used were Poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) and poly(p-phenylenevinylene) (PPV). PPV has been obtained from the poly(xylyliden tetrahydrothiophenium chloride) (PTHT) precursor. The so-called Spin Self-Assembly Layer-by-Layer deposition method (SA-LbL) was utilized to obtain the films. Absorption measurements confirmed the linear growth of layers using for polyelectrolyte/polyelectrolyte and polymer/polyelectrolyte interfaces. In order to understand the &pi;-electron transfer from the conjugated polymer to charged states of the polyelectrolyte, the configurations of the polymeric structures were modified by depositing different polyelectrolyte monolayer on the polymer film. We observed that &pi;-electrons were effectively transferred to polyelectrolytes that have high electron affinities. This effect strongly affects both absorption and conduction features of such very thin polymeric film. The absorption is restored after the conversion of PTHT in PPV. Photoluminescence measurements on PFO/PPV films result in emission curves with characteristic peaks of both polymers, confirming that SA-LbL technique allows deposition of multilayer polymeric structures. The various film configurations elucidates the transfer processes occurring at different interfaces like: change of polyelectrolyte deposition order, number of PTHT/DBS bilayers and introduction of spacers. In addition, Single Quantum Well (SQW), i.e., structures consisted of PPV layer surrounded of 10 nm thick PFO barriers were obtained. Optical absorption, PL and excitation spectroscopy showed an efficient excited state migration from the PFO barrier to the PPV well. The confocal image homogeneity demonstrated the layer coverage control at a monolayer level and without layer intermixing of the sequentially deposited polymeric materials. High resolution Confocal Fluorescence Microscopy (CFM) and Fluorescence Life spectroscopy and Imaging (FLIM) were used to characterize the exciton dynamics and confinement in quantum well. The CFM measurements demonstrated that excitons generated at the PFO barrier are efficiently transferred to the PPV well. Furthermore, the decay time of the residual PFO emission is strongly reduced due to the competing migration process in the well. The decay time of PPV decreases substantially for well thicknesses below 5 nm as a result of exciton self-annihilation. Thus, the MQW structures obtained by SA-LbL technique can be used to study energy transfer, tunneling effects and to build up new optoelectronic devices with greater efficiency.