The Shubnikov-de Haas effect is an oscillation in the electrical resistivity or conductivity of a metal, semimetal, or semiconductor as a function of changing magnetic field which occurs at low temperatures. The effect is caused by the quantization of the momentum and energy of the charge carriers by the magnetic field. Since the nature of the oscillation depends strongly on the energy band structure of the material in which it is measured, the effect could be quite useful as an investigative tool. Its usefulness has been limited, however, by the uncertainty as to the functional form of the relationship between the measured oscillations and the parameters characterizing the material. One purpose of the present study is to extend the usefulness of the Shubnikov-de Haas effect by experimentally determining the functional form appropriate for a material such as n-type indium antimonide. The second purpose of the study is to determine values for the parameters which characterize the band structure of indium antimonide. The curve fitting procedure is found to be a powerful tool for investigating band structure. All computer programs used in processing the data, fitting the data, and comparing the results with the Kane model are given.

The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface passivation quality of silicon nitride on n-type silicon, and injection-level dependent lifetime data is used extensively in this thesis to evaluate the surface passivation quality of the silicon nitride films. The thesis covers several aspects, spanning from characterisation and modelling, to process development, to device integration. The thesis begins with a review on the advantages of using n-type silicon for solar cells applications, with some recent efficiency results on n-type silicon solar cells and a review on various interdigitated backside contact structures, and key results of surface passivation for n-type silicon solar cells. It then presents an analysis of the influence of various parasitic effects on lifetime data, highlighting how these parasitic effects could affect the results of experiments that use lifetime data extensively. A plasma enhanced chemical vapour deposition process for depositing silicon nitride films is developed to passivate both diffused and non-diffused surfaces for n-type silicon solar cells application. Photoluminescence imaging, lifetime measurements, and optical microscopy are used to assess the quality of the silicon nitride films. An open circuit voltage of 719 mV is measured on an n-type, 1 Ω.cm, FZ, voltage test structure that has direct passivation by silicon nitride. Dark saturation current densities of 5 to 15 fA/cm2 are achieved on SiN-passivated boron emitters that have sheet resistances ranging from 60 to 240 Ω/□ after thermal annealing. Using the process developed, a more profound study on surface passivation by silicon nitride is conducted, where the relationship between the surface passivation quality and the film composition is investigated. It is demonstrated that the silicon-nitrogen bond density is an important parameter to achieve good surface pas-sivation and thermal stability. With the developed process and deeper understanding on the surface passivation of silicon nitride, attempts of integrating the process into the fab-rication of all-SiN passivated n-type IBC solar cells and laser doped n-type IBC solar cells are presented. Some of the limitations, inter-relationships, requirements, and challenges of novel integration of SiN into these solar cell devices are identified. Finally, a novel metallisation scheme that takes advantages of the different etching and electroless plating properties of different PECVD SiN films is described, and a preliminary evalua-tion is presented. This metallisation scheme increases the metal finger width without increasing the metal contact area with the underlying silicon, and also enables optimal distance between point contacts for point contact solar cells. It is concluded in this thesis that plasma enhanced chemical vapour deposited silicon nitride is well-suited for n-type silicon solar cells.

The n-type diamond has been shown to be very difficultly synthesized by CVD method. Nitrogen as a donor impurity shows a similar atom size of carbon for diamond lattice. However, nitrogen doped diamond reveals deep level and large carrier activation energy with much defects in diamond. The application of n-type diamond has less reported and the characteristic of nitrogen doped diamond seems varied due to different fabrication process. Our previous study of nitrogen doped diamond using mixture of N2 and argon gas synthesized by microwave CVD indicated that nitrogen atoms were precipitated in the grain boundaries of diamond crystallites. In this paper, it compared the synthesis of nitrogen doped diamond using the mixed gas of nitrogen/CH4/Ar and ammonia/CH4/Ar gases by microwave CVD method for different temperature, gas flow rate, pressure, and microwave power. The conductivities, carrier concentrations and mobility of the n-type doped diamond have been analyzed and discussed. The Hall measurement shows that the mixture of gas with Ar reveals different growth mechanism and carrier transportation properties in diamond. Nitrogen atoms of N2 were located in the grain boundaries and interfaces among diamond crystallites with the sp2 structure. Nitrogen atoms of NH3 are doped into the diamond crystallites.

The photoreflectance(PR) and Electroreflectance(ER) of surface-intrinsic-n+ type doped GaAs exhibit many Franz-Keldysh oscillations (FKOs), which enable the electric field (F) to be determined from the technique of the fast Fourier transform (FFT). It is known that F's determined from PR are subjected to photovoltaic effect, but it is difficult to estimate the strength of modulating field (dF) of the pump beam in the PR measurements . Alperovich et. al. have used imaginary part of FFT to determine the strengths of dF's in the ER measurements [V. L. Alperovich, et. al. Appl. Phys . Lett. 71, 2788 (1997)]. Here, we will apply this method to the PR measurements. The dF's thus obtained will be compared with those deduced from photo-voltage measurements. The result shows that the method of Alperovich's can be used to determine the strength of dF in the PR measurements.

The field of organic electronics has become an increasingly important field of research in recent years. Organic based semiconductors have the potential for creating inexpensive, solution processed devices on flexible substrates. Some of the applications of organic semiconductors include organic field effect transistors, organic light emitting diodes and organic photovoltaics. Functionalized pentacenes have been proven to be viable donor materials for use in organic photovoltaic devices. The goal of this research is to synthesize and test the viability of novel electron deficient pentacenes and pentacene based materials as acceptors to be used as drop-in replacements for PCBM in bulk-heterojunction organic solar cells. Our goal was to tune and improve the efficiencies of these solar cells in a two pronged approach. First we tuned the open circuit voltage of these devices by determining the optimal energy levels of these acceptors by varying the number of electron withdrawing substituents on the acene core. We also tuned the short circuit current by chemically altering the solid state packing and optimizing device processing conditions. A preliminary structure-property relationship of these small molecule acceptors and photovoltaic device efficiency was established as a result.

Stable organic semiconductors are critical to produce inexpensive, efficient and flexible thin film organic solar cells. A current chemical focus is the synthesis of stable, electron-accepting materials to be utilized as an acceptor layer in photovoltaics.1 The Anthony group has shown that the functionalization of pentacene with suitable electron withdrawing groups provides a catalog of suitable acceptors for this purpose.2 These pentacenes can be further modified to pack in a unique 1-dimensional "sandwich herringbone" crystal packing, leading to improved device current.3 To improve the stability of acene acceptors, we have taken two hetero-atom themed approaches. First, we have studied the acenequinone as an electron-accepting chromophore.4 Further, we replaced the terminal aromatic rings with heterocycles, such as furan or thiophene. In order to enhance the crystal engineering versatility of the chromophore, we utilize c-fused heterocycles (rather than the more commonly used b-fused cycles seen in e.g. anthradithiophenes). The c-fused acenequinones can be tetra-functionalized with silylethynyl groups to influence crystal packing and increase solubility.5 The silylethyne groups are known to increase the photostability and lower the energy gap (Eg) of pentacenes.5 The functionalization of the silylethyne groups also aids in lowering the lowest unoccupied orbital (LUMO) of acene structures.5

The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface passivation quality of silicon nitride on n-type silicon, and injection-level dependent lifetime data is used extensively in this thesis to evaluate the surface passivation quality of the silicon nitride films. The thesis covers several aspects, spanning from characterisation and modelling, to process development, to device integration. The thesis begins with a review on the advantages of using n-type silicon for solar cells applications, with some recent efficiency results on n-type silicon solar cells and a review on various interdigitated backside contact structures, and key results of surface passivation for n-type silicon solar cells. It then presents an analysis of the influence of various parasitic effects on lifetime data, highlighting how these parasitic effects could affect the results of experiments that use lifetime data extensively. A plasma enhanced chemical vapour deposition process for depositing silicon nitride films is developed to passivate both diffused and non-diffused surfaces for n-type silicon solar cells application. Photoluminescence imaging, lifetime measurements, and optical microscopy are used to assess the quality of the silicon nitride films. An open circuit voltage of 719 mV is measured on an n-type, 1 Ω.cm, FZ, voltage test structure that has direct passivation by silicon nitride. Dark saturation current densities of 5 to 15 fA/cm2 are achieved on SiN-passivated boron emitters that have sheet resistances ranging from 60 to 240 Ω/□ after thermal annealing. Using the process developed, a more profound study on surface passivation by silicon nitride is conducted, where the relationship between the surface passivation quality and the film composition is investigated. It is demonstrated that the silicon-nitrogen bond density is an important parameter to achieve good surface pas-sivation and thermal stability. With the developed process and deeper understanding on the surface passivation of silicon nitride, attempts of integrating the process into the fab-rication of all-SiN passivated n-type IBC solar cells and laser doped n-type IBC solar cells are presented. Some of the limitations, inter-relationships, requirements, and challenges of novel integration of SiN into these solar cell devices are identified. Finally, a novel metallisation scheme that takes advantages of the different etching and electroless plating properties of different PECVD SiN films is described, and a preliminary evalua-tion is presented. This metallisation scheme increases the metal finger width without increasing the metal contact area with the underlying silicon, and also enables optimal distance between point contacts for point contact solar cells. It is concluded in this thesis that plasma enhanced chemical vapour deposited silicon nitride is well-suited for n-type silicon solar cells.

abstract: Optoelectronic and microelectronic applications of germanium-based materials have received considerable research interest in recent years. A novel method for Ge on Si heteroepitaxy required for such applications was developed via molecular epitaxy of Ge5H12. Next, As(GeH3)3, As(SiH3)3, SbD3, S(GeH3)2 and S(SiH3)2 molecular sources were utilized in degenerate n-type doping of Ge. The epitaxial Ge films produced in this work incorporate donor atoms at concentrations above the thermodynamic equilibrium limits. The donors are nearly fully activated, and led to films with lowest resistivity values thus far reported. Band engineering of Ge was achieved by alloying with Sn. Epitaxy of the alloy layers was conducted on virtual Ge substrates, and made use of the germanium hydrides Ge2H6 and Ge3H8, and the Sn source SnD4. These films exhibit stronger emission than equivalent material deposited directly on Si, and the contributions from the direct and indirect edges can be separated. The indirect-direct crossover composition for Ge1-ySny alloys was determined by photoluminescence (PL). By n-type doping of the Ge1-ySny alloys via P(GeH3)3, P(SiH3)3 and As(SiH3)3, it was possible to enhance photoexcited emission by more than an order-of-magnitude. The above techniques for deposition of direct gap Ge1-ySny alloys and doping of Ge were combined with p-type doping methods for Ge1-ySny using B2H6 to fabricate pin heterostructure diodes with active layer compositions up to y=0.137. These represent the first direct gap light emitting diodes made from group IV materials. The effect of the single defected n-i¬ interface in a n-Ge/i-Ge1-ySny/p-Ge1-zSnz architecture on electroluminescence (EL) was studied. This led to lattice engineering of the n-type contact layer to produce diodes of n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architecture which are devoid of interface defects and therefore exhibit more efficient EL than the previous design. Finally, n-Ge1-ySny/p-Ge1-zSnz pn junction devices were synthesized with varying composition and doping parameters to investigate the effect of these properties on EL. / Dissertation/Thesis / Doctoral Dissertation Chemistry 2016

Contact formation with silver (Ag) thick film pastes on boron emitters of n-type crystalline silicon (Si) solar cells is a nontrivial technological task. Low contact resistances are up to present only achieved with the addition of aluminium (Al) to the paste. During contact formation, Al assisted spiking from the paste into the silicon emitter and bulk occurs, thus leading to a low contact resistance but also to a deterioration of other cell parameters. Both effects are coupled and can be adjusted by choosing proper Al contents of the paste and temperatures for contact formation. In this work the microscopic electric properties of single spikes are presented. These microscopic results, i.e. alterations of the local emitter doping density, the pronounced local recombination activity at the interface between spikes and Si and its influence on the charge collection efficiency, are used to explain the observed dependencies of global cell parameters on the Al content of contact pastes.

Organic bioelectronics develops electronic devices at the interface with living systems using organic electronic materials. These devices can identify various chemical species and regulate the operation of individual cells, tissues, or organs. A famous organic bioelectronic device is the organic electrochemical transistor (OECT), a highly versatile circuit component that has been used in applications spanning from biosensing to neuromorphic computing. OECTs can be operated in aqueous electrolytes and use organic mixed ionic-electronic conductors (OMIECs) in their channel (and sometimes as gate electrode coating) that can transport electronic and ionic charges, making them ideal for bridging biological systems and silicon-based electronic devices. Electron-transporting (n-type) OMIEC materials have received particular attention because high-performance n-type OECTs can be used to build inverters, sensors, and complementary amplifiers. However, electron transport in an aqueous and ambient environment under the application of electrical fields is a complex phenomenon that requires in situ investigation techniques. Understanding how films operate in such media can allow to construct novel sensors and eliminate the loss processes. This Ph.D. dissertation focuses on the impact of the environment, specifically oxygen, and light, on the performance of n-type OECTs and shows how to use this knowledge to develop OECT-based glucose sensors and photodetectors. Chapter 1 introduces the mixed charge transport phenomenon in conjugated polymers and how to use it in OECT operation. OECT fabrication and various designs are described, setting the ground for the sensors we will show in the following chapters. The experimental procedures used to evaluate the critical figures of merit of the materials and the transistor performance are described in detail. Chapter 2 introduces how OECTs can be used to transduce biochemical binding events. When employing the OECT platform for biochemical sensing, it is essential to differentiate between the faradaic, capacitive, and potentiometric contributions to the sensor response. Understanding the underlying mechanisms is critical for optimizing performance. This chapter explains these different sensing mechanisms with literature examples. Chapter 3 compiles all experimental details relevant to the investigations presented in Chapters 4 and 5. Chapter 4 investigates the working mechanism of a novel n-type OECT-based glucose sensor relying on an enzymatic reaction. This chapter shows the oxygen reaction reactions and the importance of monitoring contact potentials during device operation to understand how detection occurs. The work unveils the role of the oxygen sensitivity of the n-type material on the sensor operation and suggests paths to improve performance. Chapter 5 explores the interactions of light with n-type OMIECs and how to utilize them to build water-compatible phototransistors. The first part of the chapter involves a characterization of the light/matter interplay of an n-type film and a demonstration of how to use it to build a photoelectrochemical transistor. The second part of the chapter expands this work to other n-type materials and assesses their light sensitivity, building a relationship between material property and device performance. Since most detection events lead to a change in the surface of materials, techniques that monitor surface roughness and profile changes in situ can be useful. Chapter 6 describes an atomic force microscopy (AFM) setup that can be used to investigate binding events and electrochemical doping and de-doping dynamics of OMIEC films. This chapter is intended to assist researchers in developing in-operando AFM procedures studying OMIEC films.