ITC/USA 2014 Conference Proceedings / The Fiftieth Annual International Telemetering Conference and Technical Exhibition / October 20-23, 2014 / Town and Country Resort & Convention Center, San Diego, CA / The decision to buy or develop any system component is a difficult one. Clearly, the development time and cost is less when using an off-the-shelf component; however, these components attempt to meet the requirements of a main-stream market segment. Outside of those markets, a designer may need to add unique features to solve problems for specialty markets; one example is SSDs for telemetry markets where one critical component is the NAND flash controller. This paper will focus on some of the requirement differences and why it is so important for SSD designers to develop their own controller for these markets.

The CAGR (Compound Annual Growth Rate) of FLASH has been just like DRAMs in the past year. This product has become a typical product in the semiconductor industry. There have already been a lot of theses to study DRAM. Based on FLASH development in recent years, this thesis will determine what the successful key factors are and how Taiwan¡¦s companies have entered into this industry. Collecting data from second hand information, this thesis will discuss Moore¡¦s law to study the impact and innovation of semiconductor in the past 40 years. According to Porter¡¦s Five Forces Model (1980), in practice this research will probe the technological evolution, industry structure, market demand, and competition relative to three success key factors- Intellectual Property, Technology Node and Economies of Scale. Following Porter's Diamond(1990), we reveal that Taiwan¡¦s FLASH industry should cooperate with a DRAM partner and develop critical intelligent property in order to exchange licenses with a leading company.

ITC/USA 2013 Conference Proceedings / The Forty-Ninth Annual International Telemetering Conference and Technical Exhibition / October 21-24, 2013 / Bally's Hotel & Convention Center, Las Vegas, NV / Solid-State Drives (SSDs) are an enabling technology for data recorders. SSDs can survive where Hard-Disk Drives (HDDs) cannot. SSDs deliver better performance with lower power consumption than HDDs. However, the end of Single-Level Cell (SLC) NAND flash may be near; Multi-Level Cell (MLC) NAND flash soon may be the only choice for industrial applications. System designers have two distinct concerns before implementing SSDs: 1. Cost: MLC NAND flash makes SSDs as affordable as HDDs 2. Endurance: SSDs are reliable and endurance assured with today's controller technology SSDs are leading the charge in transforming data storage in several applications, telemetry included.

Thesis (M.S.)--University of Wisconsin--Madison, 1970. / eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.

Submitted by JOSIANE SANTOS DE OLIVEIRA (josianeso) on 2017-05-25T12:10:45Z No. of bitstreams: 1 Elcio Kondo_.pdf: 2605139 bytes, checksum: bc6eb6e69a381723f69fbce90af22fab (MD5) / Made available in DSpace on 2017-05-25T12:10:45Z (GMT). No. of bitstreams: 1 Elcio Kondo_.pdf: 2605139 bytes, checksum: bc6eb6e69a381723f69fbce90af22fab (MD5) Previous issue date: 2017-01-11 / Nenhuma / Atualmente vários equipamentos eletrônicos são equipados com memórias NAND Flash para armazenar dados. Essas memórias são controladas através de um circuito integrado com um controlador de memória, que internamente possui um sistema para garantir a integridade das informações armazenadas, os quais são conhecidos por Error Correction Codes (ECC). Os ECCs são códigos capazes de detectar e corrigir erros através de bits redundantes adicionados à informação. Normalmente, os códigos ECC são implementados em hardware dentro do controlador de memória NAND Flash. Neste trabalho comparou-se alguns códigos de ECC utilizados pela indústria, para as comparações utilizou-se os códigos ECC: Hamming, BCH (Bose-Chaudhuri-Hocquenghem) e Reed- Solomon. Sistematicamente realizou-se comparações entre os ECCs selecionados e escolheu-se os dois mais apropriados (BCH e Hamming), os quais foram implementados em linguagem VHDL, o que possibilitou identificar o código com melhor vantagem econômica no uso em memórias NAND Flash. / Nowadays several electronic equipment are using NAND Flash memories to store data. These memories are controlled by an integrated circuit with an memory controller embedded that internally has a system to ensure the integrity of the stored information, that are known as Error Correction Codes (ECC). The ECCs are codes that can detect and correct errors by redundant bits added to information. Usually the ECC codes are implemented on NAND Flash memory controller as a hardware block. On this text ECC codes used by industry, the Hamming code, BCH (Bose-Chaudhuri-Hocquenghem) and Reed-solomon codes were compared.Systemically compare between selected ECCs were done and selected two codes (BCH and Hamming), which were described in VHDL language and allowed to identify the best code with better economical advantage for NAND Flash memories.

Οι MLC NAND Flash μνήμες παίζουν πρωταγωνιστικό ρόλο για την αποθήκευση δε- δομένων, καθώς έχουν μεγάλη αποθηκευτική ικανότητα λόγω της μεγάλης πυκνότητάς τους, χαμηλό κόστος και χαμηλή απαίτηση σε ισχύ. Για τους λόγους αυτούς, έγινε εφικτό από τους σκληρούς δίσκους οδήγησης (HDDs) πλέον έχουμε περάσει στην εποχή των Solid State Drives (SSDs) που αποτελούν ένα μεγάλο βήμα για την αποθήκευση δεδομένων αποδοτικά και αξιόπιστα. Βέβαια η παρουσία λαθών στις MLC NAND Flash μνήμες, λόγω φαινομένων όπως η γήρανση του υλικού καθιστά απαραίτητη την εφαρμογή κωδίκων διόρθωσης λαθών (ECC) ώστε να διατηρηθεί η αξιοπιστία σε επιθυμητά επίπεδα. Σκοπός λοιπόν αυτής της διπλωματικής είναι αρχικά η ανάπτυξη ενός παραμετροποιήσιμου μοντέλου MLC NAND Flash μνήμης για την εξομοίωση εμφάνισης λαθών. Στη συνέχεια η χρησιμοποίηση soft-decision Low Density Parity Check (LDPC) κωδίκων για τη διόρθωση λαθών με τέτοι οτρόπο ώστε να παρατείνουμε το χρόνο ζωής της μνήμης και τελικά να υπολογίσουμε το Life Time Capacity που αποτελεί το συνολικό μέγεθος της πληροφορίας που μπορεί να αποθηκευθεί σε μία μνήμη καθ’όλη τη διάρκεια ζωής της. / --

Η συμπεριφορά των NAND Flash μνημών, της πιο επιτυχημένης τε- χνολογίας Non-Volatile μνημών σήμερα, αλλοιώνεται με την αύξηση των εγγραφών. Αυτή η διαδικασία, που ονομάζεται γήρανση, πέρα από μη ανα- στρέψιμη είναι και πολύ σημαντική για τον σχεδιασμό συστημάτων που χρησιμοποιούν NAND Flash μνήμες (π.χ. SSD), επειδή επηρεάζει την ΙΟ απόδοση και την αξιοπιστία του συστήματος. Τα πειράματα πάνω σε πραγ- ματικές NAND Flash μνήμες είναι χρονοβόρες και μη αναστρέψιμες δια- δικασίες, καθώς νέες εγγραφές στην μνήμη αυξάνουν την γήρανση και η συμπεριφορά του συστήματος αλλάζει. Σκοπός της παρούσας διπλωματικής εργασίας, είναι η ανάπτυξη ενός συστήματος που θα μπορεί να εξομοιώσει σε πραγματικό χρόνο και με με- γάλη ακρίβεια την συμπεριφορά NAND Flash μνημών με συνθήκες γή- ρανσης παραμετροποιημένες από τον χρήστη. Τα βασικά πλεονεκτήματα αυτής της προσέγγισης είναι τα ακόλουθα: η τεχνολογία που εξομοιώνεται μπορεί να χρησιμοποιηθεί υπό ίδιες συνθήκες γήρανσης για επαναληπτικά πειράματα και το ίδιο σύστημα μπορεί να χρησιμοποιηθεί για να συγκρίνει διαφορετικές τεχνολογίες μνημών υπό διαφορετικές συνθήκες γήρανσης χρησιμοποιώντας τις ίδιες ρυθμίσεις hardware. / The behavior of NAND Flash, the most successful non-volatile memory technology today, deteriorates as the number of write accesses increases. This process, known as aging, is not only irreversible but also critical for the design of systemsthat use NAND Flash (ie. Solid-State Drives), since it affects the system’s IO performance and the required overhead for achieving a specific level of reliability. Experimental characterization of NAND Flash-based systems during their whole lifetime is a time-consuming and non-repetitive process, since further programming cycles increase aging, and the system's behavior changes. In this work, we present the architecture and experimental resultsof a system that can be used to emulate in real-time and with high precision the behavior of NAND Flash memories underuser-defined aging conditions. The main advantages of this approach are the following: the emulated technology can be used under the same aging conditions for repetitive experiments and under different aging conditions using the same hardware setup.

This work deals with the design scheme and printed circuit boards for drives teaching laboratory Stand, for teaching at the Department of Power Electrical and Electronic VUT Brno.

International Telemetering Conference Proceedings / October 20-23, 2003 / Riviera Hotel and Convention Center, Las Vegas, Nevada / Due to the rotating mechanism in mechanical disks, they cannot provide the top-level reliability required for operation in harsh military environments. This paper describes three COTS alternatives to mechanical disks: ruggedized mechanical disks, solid-state flash disks and stacked PC Cards. It discusses their cost-effectiveness and aspects such as environmental specifications, endurance and data reliability. It highlights several methods used by flash disks to enhance endurance and reliability, as well as flash pricing and density trends. It presents data security requirements in actual emergency situations, and how flash disks can meet these requirements. It concludes with a feature-by-feature comparison of ruggedized disks, flash disks and stacked PC Cards.

ITC/USA 2005 Conference Proceedings / The Forty-First Annual International Telemetering Conference and Technical Exhibition / October 24-27, 2005 / Riviera Hotel & Convention Center, Las Vegas, Nevada / This paper discusses data storage requirements for data acquisition systems, and evaluates the ability of three of the most popular COTS data storage solutions - mechanical disk, ruggedized mechanical disk and solid-state flash disk - to meet these requirements today and in the future. It addresses issues of capacity, data reliability, endurance, form factor, cost and security. It concludes with a discussion of trends to implement high-speed serial interfaces in data acquisition systems, and the challenges that these trends pose for COTS storage solutions.