Thesis (M. Eng.)--Carleton University, 2001. / Includes bibliographical references (p. 72-74). Also available in electronic format on the Internet.

Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2005. / David E. Schimmel, Committee Member ; C.P. Wong, Committee Member ; John A. Buck, Committee Member ; Abhijit Chatterjee, Committee Chair ; Madhavan Swaminathan, Committee Member. Vita. Includes bibliographical references.

Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2006. / Buck, John, Committee Co-Chair ; Ferguson, Ian, Committee Chair ; Krishnamurthy,Vikram, Committee Member ; Chang, Gee-Kung, Committee Member ; Callen, W. Russell Jr., Committee Member ; Summers, Christopher, Committee Member.

Made available in DSpace on 2014-06-11T19:35:45Z (GMT). No. of bitstreams: 0 Previous issue date: 2012-08-30Bitstream added on 2014-06-13T19:06:02Z : No. of bitstreams: 1 floriano_ea_dr_bauru.pdf: 1682344 bytes, checksum: a9dc55dd1f9da48c4cd793193ef74aea (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Este trabalho apresenta uma abordagem teórico-experimental na investigação de filmes finos de dióxido de estanho (SnO2) não dopado, de SnO2 dopado com antimônio (Sb), de dióxido de titânio (TiO2) e também de heteroestrutura Tio2/SnO2, produzidos pelo processo sol-gel-dip-coating. O conhecimento dos mecanismos de transporte elétrico de SnO2:Sb é fundamental para o desenvolvimento de dispositivos opto-eletrônicos. Neste sentido, a contribuição deste trabalho está principalmente no estudo das propriedades elétricas de SnO2:Sb, no qual foi analisado a captura de elétrons fotoexcitados por centros de Sb e/ou vacâncias de oxigênios termicamente ativados. Os resultados, surpreendentemente, mostraram que a taxa de variação da condutividade diminui com o aumento temperatura, independente da energia da fonte de excitação (acima ou abaixo da energia do bandgap). Este comportamento está provavelmente relacionado à mobilidade eletrônica, que é dominado pelo espalhamento de portadores de carga na região do contorno de grão. Quanto à heterojunção TiO2/SnO2, o conhecimento do tipo de estrutura cristalina dos semicondutores óxidos é fundamental para sua utilização em determinadas aplicações tecnológicas. A avaliação das propriedades estruturais de filmes finos de TiO2 apresentada nesta tese mostrou que o substrato de quartzo, utilizado para deposição dos filmes, exerce influência na temperatura de transição de fase anatásio-rutilo. De modo geral, apresentamos aqui uma avaliação das propriedades ópticas, estruturais, elétricas e eletrônicas de filmes finos de SnO2 e de SnO2:SB e também das propriedades ópticas, estruturais e eletrônicas de TiO2 e heterojunção TiO2/SnO2. As propriedades eletrônicas foram obtidas a partir de simulações computacionais de SnO2 SnO2:Sb e TiO2 desenvolvidas com o programa CRYSTAL06, baseadas na Teoria do Funcional da Densidade / This work presents a theoretical-experimental approach in the investigation of undoped and Sb-doped SnO2 thin flims, TiO2 thin films and also the heterostructure TiO2/SnO2 deposited through the sol-gel-dip-coating technique. The knowledge of the electrical transport mechanisms in SnO2:Sb is fundamental towards the devolping of optoelectronic devices. Then, our contribution concerns the analysis of the electronic structure and, mainly, the investigation of the electrical properties of SnO2:Sb, where the electron capture by thermally activated Sb centers and/or oxygen vacancies was proposed. Results, surpisingly, show that the conductivity variation rate increases with temperature, independent on excitation source energy (above or below the gandgap energy). This behavior is probaly related to the electronic mobility, which is dominated by the charge carrier scattering at boundary layer. Concerning the heterojunction TiO2/SnO2, the determination of the crystalline structure type of oxide semiconductors if fundamental for application in specific technologies. The evalution of structural properties of TiO2 films show that the quartz substrate, used for film deposition, influences the transition temperature of the anatase-rutile phases. In summary, we present an evalution of optical, structural, electrical and electronic properties of SnO2 and SnO2:Sb as well as optical, structured, and electronic properties of TiO2/SnO2. Electronic properties were obtained from computacional simulations of SnO2, SnO2:Sb, TiO2 and TiO2/SnO2, developed with the program CRYSTAL06, through the Density Functional Theory

Made available in DSpace on 2014-06-11T19:22:54Z (GMT). No. of bitstreams: 0 Previous issue date: 2012-08-30Bitstream added on 2014-06-13T19:49:15Z : No. of bitstreams: 1 pereira_cj_me_sjrp.pdf: 4585703 bytes, checksum: 2f751deb0c13952d939c128cd3139b81 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Esta dissertação de mestrado apresenta um estudo sobre as propriedades de foto-geração de portadores de carga e sua condução em dispositivos optoeletrônicos orgânicos construídos em estruturas de diodo tipo sanduíche – ITO/Polímero/Metal – sendo empregados como sua camada ativa dois polímeros orgânicos conjugados distintos, o poly[2-methoxy-5-(3’,7’-dimethyloctyloxy)-1,4-phenylene vinylene) ou MDMO-PPV, e o copolímero fenil substituído do poli(p-fenileno vinileno) conhecido como Super Yellow® ou SY-PPV. As características da foto-geração e de transporte de cargas dos dispositivos foram determinada através da análise de medidas de corrente-tensão (I-V) em regime d.c., e de espectroscopia de impedância/capacitância no regime da frequência (1Hz-1MHz). As propriedades elétricas dos dispositivos foram estudadas com os dispositivos iluminados em diferentes faixas de comprimentos de onda na região do visível, a diferentes intensidades, e comparadas com as propriedades dos dispositivos no escuro. Para iluminação através do eletrodo transparente (ITO), tanto um efeito fotovoltaico quanto fotocondutivo foram claramente observados. Em particular, o efeito da foto-geração no espectro de capacitância em função da frequência foi estudado em maiores detalhes. Um modelo semiempírico, levando em conta as distribuições de cargas espaciais devidas à foto-geração de portadores de carga e propriedades de transporte como, por exemplo... / This dissertation presents a study on the properties of photo-generation and conduction of charge carriers in organic optoelectronic devices built in sandwich diode structures – ITO/Polymer/Metal – with the active layer comprised by two different organic conjugated polymers: poly[2-methoxy-5-(3’,7’-dimethyloctyloxy)-1,4-phenylene vinylene) MDMO-PPV, and a phenyl-substituted copolymer of poly(p-phenylene vinylene) known as Super Yellow®, SY-PPV. The photo-generation and charge transport properties have been determined from the analysis of current-voltage (I-V) measurements in the d.c. regime and impedance/capacitance spectroscopy in the regime of frequency (1Hz-1MHz). The electrical properties of the devices were studied with the devices under illumination, in different ranges of wavelength in the visible region, at different intensities and compared with the properties of devices in the dark. By illuminating the devices through the transparent electrode (ITO), both photovoltaic and photoconductive effects were clearly observed. Particularly, the photo-generation effect in the frequency-dependent capacitance spectrum was studied in detail. A semiempirical model taking into account the spatial distribution of charges due the photo-generation and material properties... (Complete abstract click electronic access below)

Submitted by JONATAS DA SILVA CAVALCANTE null (jonatasunesp@hotmail.com.br) on 2016-05-30T18:25:16Z No. of bitstreams: 1 Dissertação_CAVALCANTE, J. S..pdf: 2922725 bytes, checksum: 28bbd38e0e0a062b2c9458d85fbf5f58 (MD5) / Approved for entry into archive by Ana Paula Grisoto (grisotoana@reitoria.unesp.br) on 2016-05-31T16:41:38Z (GMT) No. of bitstreams: 1 cavalcante_js_me_bauru.pdf: 2922725 bytes, checksum: 28bbd38e0e0a062b2c9458d85fbf5f58 (MD5) / Made available in DSpace on 2016-05-31T16:41:38Z (GMT). No. of bitstreams: 1 cavalcante_js_me_bauru.pdf: 2922725 bytes, checksum: 28bbd38e0e0a062b2c9458d85fbf5f58 (MD5) Previous issue date: 2016-03-30 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Este trabalho investiga as propriedades ópticas de um sistema semicondutor que tem alto potencial para aplicação em optoeletrônica. As amostras estudadas são baseadas no sistema InxGa1-xAs0,984N0,016/GaAs, a concentração x de índio encontra-se na faixa de 0,26 a 0,43 e foram crescidas nas temperaturas de 400°C e 430°C e, passaram por tratamento térmico, a temperatura de 720 °C, durante o tempo de 30 min. Em ambas amostras a espessura do poço é de 6,5 nm. A técnica utilizada na investigação é a fotoluminescência, que permite analisar o comportamento de portadores em diferentes faixas de temperatura e regimes de excitação, para caracterizar a qualidade estrutural das amostras. No estudo procuramos compreender o comportamento das emissões ópticas analisando a largura de linha a meia altura (FWHM) da emissão, a variação do band gap com a temperatura e a localização e ativação térmica dos portadores de carga. / This work investigates the optical properties of a semiconductor system which has high potential for application in optoelectronics. The samples studied are based on InxGa1-xAs0,984N0,016 / GaAs system, the indium concentration x is in the range from 0.26 to 0.43, and were grown at temperatures of 400 °C and 430 °C and received thermal treatment, at 720 oC, during 30 minutes. In both samples the well thickness is 6.5 nm. The technique used in the investigation is the photoluminescence, which allows to analyze the behavior of carriers in different temperature ranges and excitation regimes, in order to characterize the structural quality of the samples. In the study we sought to understand the behavior of the optical emissions by analyzing the full width at half-maximum (FWHM) of the emission line, the variation of the band gap with temperature and the trapping and thermal activation of charge carriers.

Este trabalho tem como objetivo validar modelos elétrico e térmico de um motor de indução trifásico, utilizando redes de Bragg em fibra ótica (FBG) como elemento sensor. São apresentados dois modelos elétricos do motor de indução que contemplam as perdas magnéticas para uma frequência fixa, obtidos a partir do modelo clássico sob o eixo de referência qd0. As perdas no ferro são representadas por resistências localizadas em paralelo à indutância de magnetização para o primeiro modelo e em paralelo às indutâncias de dispersão do estator e de magnetização para o segundo modelo. O circuito térmico equivalente é representado por impedância (condutividade e capacitância) térmica associada ao rotor e estator. Para a realização dos ensaios no motor foi elaborado um arranjo experimental que permite a medição dos valores elétricos, térmicos e mecânicos simultâneamente. Para a medição de temperatura utilizou-se oito sensores a fibra ótica quase-distribuídos e multiplexados. A instrumentação do motor possibilita a determinação do comportamento térmico da máquina desde a partida até a temperatura em regime. Durante os ensaios foram inseridas oscilações na tensão de alimentação do motor que ocasionaram oscilações de temperatura na ordem de 0,5oC no estator do motor. Os ensaios realizados permitiram ainda a separação da contribuição das perdas mecânicas e eletromagnéticas na elevação de temperatura do motor. Os resultados da simulação do modelo elétrico do motor apresentam uma diferença de 3,6% para a corrente de entrada do motor e 0,1% para a velocidade e potência de saída quando comparados aos valores nominais do motor. A partir do modelo elétrico do motor de indução é possível determinar as perdas elétricas, mecânicas e perdas no ferro do motor. Os resultados da simulação do modelo térmico apresentam uma diferença máxima de 0,75oC durante o transitório, sendo que os valores de temperatura em regime simulado e experimental convergiram para o mesmo valor. A técnica de instrumentação optoeletrônica associada ao arranjo experimental utilizado no trabalho possibilitou a determinação da elevação de temperatura referente as perdas mecânicas do motor. / This work aims to validate electrical and thermal models of a three phase induction motor using fiber Bragg gratings (FBG) as the sensing element. Two electrical models considering the magnetic losses for a fixed frequency, from the well-known model in the arbitrary reference frame qd0 is presented in this work. The iron losses are represented by a resistance in parallel to the magnetizing inductance for the first model and parallel to the stator leakage and magnetization inductance for the second model. The equivalent thermal circuit is represented by a thermal conductivity and a thermal capacitance associated to the stator and rotor. For motor tests realization an experimental arrangement is developed. The experimental arrangement allows the measurement of electrical, thermal and mechanical values simultaneously. For the temperature measurement was used eight fiber optic sensors quasi-distributed and multiplexed. The motor instrumentation allows determine the motor thermal behavior from the start until the temperature regime. During the tests oscillations in voltage feed was included, causing temperature oscillations on the order of 0.5oC on the motor stator. The tests also allowed the separation of the contribution of electromagnetic and mechanical losses in the motor temperature rise. The simulation results of the motor electrical model show a difference of 3.6% for the motor input current and 0.1% for output speed and power compared with motor rated values. From the electrical model of the induction motor is possible to determine the electrical losses, iron losses and mechanical losses. The optoelectronics instrumentation technique associated with the experimental setup used in this work allows determine the temperature elevation related motor mechanical losses.

Este trabalho tem como objetivo validar modelos elétrico e térmico de um motor de indução trifásico, utilizando redes de Bragg em fibra ótica (FBG) como elemento sensor. São apresentados dois modelos elétricos do motor de indução que contemplam as perdas magnéticas para uma frequência fixa, obtidos a partir do modelo clássico sob o eixo de referência qd0. As perdas no ferro são representadas por resistências localizadas em paralelo à indutância de magnetização para o primeiro modelo e em paralelo às indutâncias de dispersão do estator e de magnetização para o segundo modelo. O circuito térmico equivalente é representado por impedância (condutividade e capacitância) térmica associada ao rotor e estator. Para a realização dos ensaios no motor foi elaborado um arranjo experimental que permite a medição dos valores elétricos, térmicos e mecânicos simultâneamente. Para a medição de temperatura utilizou-se oito sensores a fibra ótica quase-distribuídos e multiplexados. A instrumentação do motor possibilita a determinação do comportamento térmico da máquina desde a partida até a temperatura em regime. Durante os ensaios foram inseridas oscilações na tensão de alimentação do motor que ocasionaram oscilações de temperatura na ordem de 0,5oC no estator do motor. Os ensaios realizados permitiram ainda a separação da contribuição das perdas mecânicas e eletromagnéticas na elevação de temperatura do motor. Os resultados da simulação do modelo elétrico do motor apresentam uma diferença de 3,6% para a corrente de entrada do motor e 0,1% para a velocidade e potência de saída quando comparados aos valores nominais do motor. A partir do modelo elétrico do motor de indução é possível determinar as perdas elétricas, mecânicas e perdas no ferro do motor. Os resultados da simulação do modelo térmico apresentam uma diferença máxima de 0,75oC durante o transitório, sendo que os valores de temperatura em regime simulado e experimental convergiram para o mesmo valor. A técnica de instrumentação optoeletrônica associada ao arranjo experimental utilizado no trabalho possibilitou a determinação da elevação de temperatura referente as perdas mecânicas do motor. / This work aims to validate electrical and thermal models of a three phase induction motor using fiber Bragg gratings (FBG) as the sensing element. Two electrical models considering the magnetic losses for a fixed frequency, from the well-known model in the arbitrary reference frame qd0 is presented in this work. The iron losses are represented by a resistance in parallel to the magnetizing inductance for the first model and parallel to the stator leakage and magnetization inductance for the second model. The equivalent thermal circuit is represented by a thermal conductivity and a thermal capacitance associated to the stator and rotor. For motor tests realization an experimental arrangement is developed. The experimental arrangement allows the measurement of electrical, thermal and mechanical values simultaneously. For the temperature measurement was used eight fiber optic sensors quasi-distributed and multiplexed. The motor instrumentation allows determine the motor thermal behavior from the start until the temperature regime. During the tests oscillations in voltage feed was included, causing temperature oscillations on the order of 0.5oC on the motor stator. The tests also allowed the separation of the contribution of electromagnetic and mechanical losses in the motor temperature rise. The simulation results of the motor electrical model show a difference of 3.6% for the motor input current and 0.1% for output speed and power compared with motor rated values. From the electrical model of the induction motor is possible to determine the electrical losses, iron losses and mechanical losses. The optoelectronics instrumentation technique associated with the experimental setup used in this work allows determine the temperature elevation related motor mechanical losses.

Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active nano-sized precipitates in silica to form the active layer of an opto-electronic device was achieved with ion implantation and thermal annealing. Three material systems were investigated. These systems consisted of carbon, silicon and metal silicide based nanocrystals. The physical morphology and electronic properties were monitored using a variety of material characterization techniques. Rutherford backscattering/channeling were used to monitor elemental concentrations, photoluminescence was used to monitor the opto-electronic properties and transmission electron microscopy was used to study the intricate morphology of individual precipitates. The electronic properties and the morphology were studied as a function of implant dose, anneal times and anneal temperatures.

This thesis has focused on the optical and electronic properties of organic semiconductors and their application in molecular electronic and optoelectronic devices. The studies have featured new and useful properties from a series of perylene diimide (PDI) nanoribbons and conjugated macrocycles. These novel strained carbon-based materials are highly promising as n-type semiconductors in organic gas sensor, organic solar cells and organic photodetectors. In Chapter 2, I describe a new molecular design that enables high performance organic photodetectors. We use a rigid, conjugated macrocycle as the electron acceptor in devices to obtain high photocurrent and low dark current. We make a direct comparison between the devices made with the macrocyclic acceptor and an acyclic control molecule; we find that the superior performance of the macrocycle originates from its rigid, conjugated, and cyclic structure. The macrocycle’s rigid structure reduces the number of charged defects originating from deformed sp2 carbons and covalent defects from photo/thermo-activation. With this molecular design we are able to suppress dark current density while retaining high responsivity in an ultra-sensitive non-fullerene OPD. Importantly, we achieve a detectivity of ~1014 Jones at near zero bias voltage. This is without the need for extra carrier blocking layers commonly employed in fullerene-based devices. Our devices are comparable to the best fullerene-based photodetectors, and the sensitivity at low working voltages (< 0.1 V) is a record for non-fullerene OPDs. In Chapter 3, I describe a capsule-shaped molecule that assembles itself into a cellular semiconducting material. The interior space of the capsule with a volume of ~415 Å3 is a nanoenvironment that can accommodate a guest. To self-assemble these capsules into electronic materials, we functionalize the thiophene rings with bromines, which encode self-assembly into two-dimensional layers held together through halogen bonding interactions. In the solid state and in films, these two-dimensional layers assemble into the three-dimensional crystalline structure. This hollow material is able to form the active layer in field effect transistor devices. We find that the current of these devices has strong response to the guest’s interaction within the hollow spaces in the film. These devices are remarkable in their ability to distinguish, through their electrical response, between small differences in the guest. In Chapter 4, I describe a new molecular design for the efficient synthesis of donor-acceptor, cove-edge graphene nanoribbons and their properties in solar cells. These nanoribbons are long (~5 nm), atomically precise, and soluble. The design is based on the fusion of electron deficient perylene diimide oligomers with an electron rich alkoxy pyrene subunit. This strategy of alternating electron rich and electron poor units facilitates a visible light fusion reaction in >95% yield, while the cove-edge nature of these nanoribbons results in a high degree of twisting along the long axis. The rigidity of the backbone yields a sharp longest wavelength absorption edge. These nanoribbons are exceptional electron acceptors, and organic photovoltaics fabricated with the ribbons show efficiencies of ~8% without optimization. In Chapter 5, I describe a new molecular design that yields ultra-narrowband organic photodetectors. The design is based on a series of helically-twisted molecular ribbons as the optoelectronic material. We fabricate charge collection narrowing photodetectors based on four different helical ribbons that differ in the wavelength of their response. The photodetectors made from these materials have narrow spectral response with full-width at half maxima of < 20 nm. The devices reported here are superior by approximately a factor of 5 to those from traditional organic materials due to the narrowness of their response. Moreover, the active layers for the helical ribbon-based photodetectors are solution cast but have performance that is comparable to the state-of-the-art narrowband photodetectors made from methylammonium lead trihalide perovskite single crystals. The ultra-narrow bandwidth for detection results from the helical ribbons’ high absorption coefficient, good electron mobility, and sharp absorption edges that are defined by the twisted molecular conformation. In Chapter 6, I describe the direct connection between the molecular conformation of a conjugated macrocycle and its macroscopic charge transport properties. The macrocycles studied here are new examples of a growing class of electronically active, conjugated macrocycles that have been utilized in materials applications. Here, we incorporate chiral, helical perylene diimide ribbons into the two separate macrocycles as the n-type, electron transporting material. As the macrocycles’ films and electronic structures are analogous, the important finding is that the macrocycles’ molecular structures and their associated dynamics determine device performance in organic field effect transistors. We show the more flexible macrocycle has a four-fold increase in electron mobility in field effect transistor devices. Using a combination of 1H-NMR, spectroscopy, and density functional theory calculations, we find that the origin of the difference in device performance is the ability of more flexible isomer to make intermolecular contacts relative to the more rigid counterpart. In Chapter 7, I discuss that intramolecular conductivity can play a role in controlling device characteristics of organic field effect transistors made with macrocycle building blocks. We use two isomeric macrocyclic semiconductors that consist of perylene diimides linked with bithiophenes and find that the trans-linked macrocycle has a higher mobility than the cis-based device. Through a combination of single molecule junction conductance measurements of the components of the macrocycles, control experiments with acyclic counterparts to the macrocycles, and analyses of each of the materials using spectroscopy, electrochemistry, and density functional theory, we attribute the difference in electron mobility of the OFETs created with the two isomers to the difference in intramolecular conductivity of the two macrocycles.