This dissertation describes our study on different physical properties of passivated and chemically modified hybrid metal halide perovskite materials and development of highly efficient charge transport layers for perovskite solar cells. We first developed an efficient electron transport layer via modification of titanium dioxide nanostructure followed by a unique chemical treatment in order to have clean interface with fast electron injection form the absorber layer in the perovskite solar cells. We then explored monovalent cation doping of lead halide perovskites using sodium, copper and silver with similar ionic radii to lead to enhance structural and optoelectronic properties leading to higher photovoltaic performance of the resulting perovskite solar cells. We also performed thorough experimental characterizations together with modeling to further understand the chemical distribution and local structure of perovskite films upon monovalent cation doping. Then, we demonstrate a novel passivation approach in alloyed perovskite films to inhibit the ion segregation and parasitic non-radiative losses, which are key barriers against the continuous bandgap tunability and potential for high-performance of metal halide perovskites in device applications, by decorating the surfaces and grain boundaries with potassium halides. This leads to luminescence quantum yields approaching unity while maintaining high charge mobilities along with the inhibition of transient photo-induced ion migration processes even in mixed halide perovskites that otherwise show bandgap instabilities. We demonstrate a wide range of bandgaps stabilized against photo-induced ion migration, leading to solar cell power conversion efficiencies of 21.6% for a 1.56 eV absorber and 18.3% for a 1.78 eV absorber ideally suited for tandem solar cells. We then systematically compare the optoelectronic properties and moisture stability of the two developed passivation routes for alloyed perovskites with rubidium and potassium where the latter passivation route showed higher stability and loading capacity leading to achieve substantially higher photoluminescence quantum yield. Finally, we explored the possibility of singlet exciton fission between low bandgap perovskites and tetracene as the triplet sensitizer finding no significant energy transfer between the two. We then used tetracene as an efficient dopant-free hole transport layer providing clean interfaces with perovskite layer leading to high photoluminescence yield (e.g. ~18%). To enhance the poor ohmic contact between tetracene and the metal electrode, we added capping layer of a second hole transport layer which is extrinsically doped leading to 21.5% power conversion efficiency for the subsequent solar cells and stabilised power output over 550 hours continuous illumination.

Cette thèse concerne le développement de futurs appareils, systèmes et réseaux prenant en charge l’internet haute vitesse, sans fil 5éme g´enération (5G). La demande de débit très élevé nécessite une bande passante suffisante, et ainsi la bande de fréquence millimetrique (mm-wave) a beaucoup d’intérêt. Un certain nombre de technologies devront converger, coexister et interagir, et surtout, coopérer, si cette vision doit être efficace et rentable. Le concept principal de cette de 5G est l’intégration de réseaux de fibre optique et Les réseaux radio grâce à la technologie Radio-sur-Fibre (RoF) aux fréquences d’onde millimetriques, pour fournir des services à large bande passante et permettre des réseaux évolutifs et gérables sans structure d’interface très complexe et multiples protocoles superposés.Dans cette thèse, les systèmes de communication RoF à ondes millimetriques sont théoriquement étudiés et démontrés expérimentalement pour étudier les altérations du système. Le travail présenté dans cette thèse est axé sur le bruit optique représenté par le bruit de phase et d’intensité induit par la source optique et la dispersion chromatique introduite par la fibre optique. Le bruit optique est analysé et mesuré pour différentes techniques de génération optique. Deux dispositifs différents de conversion, un mélangeur et un détecteur d’enveloppe sont, appliqués pour le traitement du signal et pour décorréler la phase et le bruit d’intensité. Nous souhaitons souligner que cette étude et le modèle peuvent s’appliquer à tout type de système de génération optique hétérodyne et à toute gamme de fréquences. La corrélation entre les modes optiques en peigne à fréquence optique est examinée pour montrer l’impact de la dispersion chromatique. Cette thèse présente la distribution d’énergie des ondes millimetriques et son influence sur la portée des fibres et la façon dont l’effet de dispersion chromatique sur le réseau RoF depend des paramètres de dispersion. Ensuite, cette thèse démontre comment la décorrélation de la phase optique induite par la dispersion chromatique entraîne un bruit de partition de modes dans les réseaux de communication RoF à ondes millimétriques.Lors de la transmission de certains types de données sur le système, les résultats démontrent l’impact du bruit optique et de la dispersion chromatique sur le qualité du signal. Les résultats de simulation sont présentés et sont en très bon accord avec les résultats expérimentaux. La grandeur du vecteur d’erreur evaluée par en processus en ligne montre l’impact des altèrations du système sur les performances du système. Le débit de données et l’évolution du système présentée sont en conformité avec les normes de communication comme à ondes millimétriques. / This thesis is for the development of future devices, systems and networks supporting the 5th Generation (5G) high-speed wireless internet. The demand for very high bit rate requires a sufficient large bandwidth, and therefore Millimeter-Wave (mm-wave) frequency band has a lot of interest. Several number of technologies will need to converge, co-exist and interoperate, and most importantly, cooperate, if this vision is to be efficiently and cost-effectively realized. The main concept within this next 5G is the integration of optical fiber networks and radio networks through Radio-over-Fiber (RoF) technology at mm-wave frequencies, to provide high-bandwidth front/backhaul services and enable scalable and manageable networks without a highly complex interface structure and multiple overlaid protocols.In this thesis, the mm-wave RoF communication systems are theoretically studied and experimentally demonstrated to investigate the system impairments. The work presented in this thesis is focused on optical noise represented by phase and intensity noise induced by optical source and chromatic dispersion introduced by optical fiber. The optical noise is analyzed and measured for different optical generation techniques. Two different down-conversion stages, mixer and envelope detector, are applied for signal processing and to decorrelate phase and intensity noise. We would like to highlight that this study and the model can be applicable toany kind of optical heterodyne generation system and any frequency range. The correlation among optical modes in optical frequency comb is examined to show the impact of chromatic dispersion. This thesis also exhibits the mm-wave power distribution over fiber span and how the chromatic dispersion effect on the RoF network is modified by varying dispersion parameters. Then, this thesis demonstrates how the optical phase decorrelation induced by chromatic dispersion results in mode partition noise at mm-wave RoF communication networks.When transmitting some types of data over the system, the results demonstrate the impact of optical noise and chromatic dispersion on the signal quality. The simulation results are presented and are in very good agreement with experimental results. The error vector magnitudethrough online process shows the impact of the system impairments on the system performance. The data rate and system evolution are compliance with communication standards at mm-wave.

Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performance was compared with a LED with an AlGaN EBL. Characterization results suggested that the InAlN EBL delivers more effective electron blocking over AlGaN EBL. Hole-injection performance of the InAlN EBL was examined by growing and testing a series of LEDs with different InAlN EBL thickness. Analysis results by using extended quantum efficiency model shows that further improvement in the performance of LED requires better hole-injection performance of the InAlN EBL. Advanced EBL structures such as strain-engineered InAlN EBL and compositionally-graded InAlN EBLs for the delivery of higher hole-injection efficiency were also grown and tested.

This dissertation includes two parallel topics: optical modeling of wavelength converters based on semiconductor optical amplifiers (SOA) and optical modeling for LEDs and solid state lighting. A steady-state numerical model of wavelength converters based on cross-gain SOAs is developed. In this model, a new model of the gain coefficient is applied. Each physical variable, such as the carrier density, gain coefficient, differential gain, and internal loss, spatially varies across the SOA cavity and is numerically calculated throughout the device. Increased accuracy over previous studies is achieved by including such spatial variations. This model predicts wavelength-dependent characteristics of a wavelength converter of the SOA in both large and small signal regimes. Some key performance factors of SOA wavelength converters. A hybrid method incorporating both guided wave optics and optical ray tracing is also developed to model LEDs and solid state lighting. This method can model either single wavelength or dual-wavelength LED structures with different die shapes and packages. The waveguide and diffraction optics are mainly used to model the near-field optics inside LED chips and its vicinity and to identify guided modes and leakage modes. Geometrical ray tracing is applied to model the far-field pattern and light interactions at different material interfaces, such as LED chip structures, LED package materials, and light scattering at those rough surfaces and textures. To improve LED light extraction efficiency, different LED die shapes and device structures can also be optimized using this method. New technologies for future research on SOAs and LEDs are also proposed.

Optical traveling-wave resonator architectures have shown promise for the realization of many compact photonic functionalities in different research disciplines. Realizing these resonator structures in high-index contrast silicon enables dense and large scale integration of large arrays of functionalized resonators in a CMOS-compatible technology platform. Based on these motivations, the main focus of this Ph.D. research has been on the device physics, modeling, implementations, and applications of planar ultra-high Q silicon traveling-wave microresonators in a silicon-on-insulator (SOI) platform. Microdisk, microring, and racetrack resonators are the three general traveling-wave resonator architectures of interests that I have investigated in this thesis, with greater emphasis on microdisks. I have developed efficient tools for the accurate modeling of these resonators. The coupling to these resonators has been through a nano-waveguide side coupled to them. For this purpose, I have developed a systematic method for engineering a waveguide-resonator structure for optimum coupling. I have addressed the development of nanofabrication techniques for these resonators with efficient interaction with a nano-waveguide and fully compatible with active electronic integration. The outcome of the theoretical design, fabrication, and characterization of these resonators is a world-record ultra-high Q (3×10[superscript 6]) with optimum waveguide-resonator interaction. I have investigated the scaling of these resonators toward the ultimate miniaturization and its impact on different physical properties of the resonators. As a result of these investigations, I have demonstrated miniaturized Si microdisk resonators with radii of ~ 1.5 micron and Q > 10⁵ with single-mode operation over the entire large free-spectral range. This is the highest Q (~ one order more than that in previously reported data) that has been obtained for a Si microdisk resonator with this size on a SiO₂ substrate. I have employed these resonators for more advanced functionalities such as large-scale integration of resonators for spectroscopic and filtering applications, as well as the design of flat-band coupled-resonator filter structures. By proposing a systematic method of design, I have shown ultra-compact coupled-resonator filters with bandwidths ranging from 0.4 to 1 nm. I have theoretically and experimentally investigated the performance of ultra-high Q resonators at high powers and in the presence of nonlinearities. At high powers, the presence of two-photon absorption, free-carrier generation, and thermo-optic properties of silicon results in a rich dynamic in the response of the resonator. In both theory and experiment, I have predicted and demonstrated self-sustained GHz oscillation on the amplitude of an ultra-high Q resonator pumped with a continuous-wave laser.

With the rapid development of optical communications and the increasing amount of data exchanged, it has become utterly important to provide effective ar- chitectures to protect sensitive data. The use of chaotic optoelectronic devices has already demonstrated great potential in terms of additional computational security at the physical layer of the optical network. However, the determination of the security level and the lack of a multi-user framework are two hurdles which have prevented their deployment on a large scale. In this thesis, we propose to address these two issues. First, we investigate the security of a widely used chaotic generator, the external cavity semiconductor laser (ECSL). This is a time-delay system known for providing complex and high-dimensional chaos, but with a low level of security regarding the identification of its most critical parameter, the time delay. We perform a detailed analysis of the influence of the ECSL parameters to devise how higher levels of security can be achieved and provide a physical interpretation of their origin. Second, we devise new architectures to multiplex optical chaotic signals and realize multi-user communications at high bit rates. We propose two different approaches exploiting known chaotic optoelectronic devices. The first one uses mutually cou- pled ECSL and extends typical chaos-based encryption strategies, such as chaos-shift keying (CSK) and chaos modulation (CMo). The second one uses an electro-optical oscillator (EOO) with multiple delayed feedback loops and aims first at transpos- ing coded-division multiple access (CDMA) and then at developing novel strategies of encryption and decryption, when the time-delays of each feedback loop are time- dependent.

INEO / Materiais nanoestruturados, com base em ZnO tem recebido um interesse considerável por causa de suas aplicações em dispositivos optoeletrônicos. Por exemplo, em uma célula solar polimérica, devido à sua baixa função trabalho, elevada mobilidade eletrônica, excelente transparência óptica e natureza ambientalmente amigável, o ZnO torna-se a camada de transporte de elétrons mais utilizada nas células solares polimérica invertidas. Este trabalho visa proporcionar uma visão nos parâmetros que determinam a morfologia de nanopartículas de ZnO e sua influência em células solares invertidas com base em ZnO e P3HT/PCBM. Primeiro, nanopartículas de ZnO foram sintetizadas por hidrólise e condensação de acetato de zinco dihidratado por meio da rota do poliol (com e sem adição de água durante a síntese) ou utilizando o NaOH. Em seguida as técnicas de: difração de raios x (XRD), espectroscopia de absorção na região do infravermelho (FT-IR), espectroscopia de fotoluminescência, microscopia eletrônica de transmissão (TEM) e microscopia eletrônica de varredura com efeito de campo (FE-SEM) foram empregadas para estudar as características químicas e a morfologia do ZnO. Os resultados de XRD mostraram que as nanopartículas obtidas eram compostas da fase hexagonal wurtzita. O pico em 435 cm-1 identificado nos espectros de FT-IR indica a característica banda vibracional do ZnO e em 3380, 1643 e 1102 cm-1 as transições vibracionais do poliol, sugerindo que o poliol está passivando a superfície de óxido. Os espectros de fotoluminescência das amostras de ZnO, que foram sintetizados em diferentes condições, mostraram o mesmo comportamento, indicando que os defeitos no óxido podem ser devido a vacâncias de zinco e oxigênio. Foi observado que a morfologia é dependente o poliol utilizado na síntese. Para as amostras sintetizadas com etileno glicol (EG) observou-se que a morfologia muda de nanopartículas para nanobastões com a adição de água à síntese. Os dados da relação de intensidade de picos relativo de I002/I100, nos difratogramas, sugerem o crescimento preferencial orientado no sentido do eixo-c para as partículas de ZnO com forma de bastões em comparação com as partículas equiaxiais. Poliedros hexagonais e uma estrutura com a forma de folhas foram observados para o ZnO sintetizado usando polietileno glicol (PEG300) e NaOH, respectivamente. Dispositivos foram construídos para todas as amostras de ZnO sintetizado e o melhor resultado foi obtido com ZnO sintetizado com NaOH. Este resultado pode ser devido a melhor empacotamento da camada de ZnO, facilitando o transporte de elétrons. / Nanostructured materials based on ZnO has received considerable interest because of their application in optoelectronic devices. For example, in polymeric solar cell (PSC), due to its low work function, high electron mobility, excellent optical transparency, and environmentally friendly nature, ZnO becomes the most widely used electron transport layer (ETL) in the inverted PSCs. This work aims at providing an insight in the parameters that determine the morphology of ZnO nanoparticles and their influence onto inverted solar cells based on ZnO and P3HT/PCBM. First, ZnO nanoparticles were synthesized by hydrolysis and condensation of zinc acetate dihydrate by polyol route (with and without water addition during the synthesis) or using NaOH. Then, X-ray diffraction (XRD), infrared and photoluminescence spectroscopies, transmission electron microscopy (TEM) and field emission scanning electron microscopy (FE-SEM) were employed to study the chemical characteristic and the morphology of the ZnO. XRD results showed that the nanoparticles obtained were composed of hexagonal wurtzite phase. FT-IR spectra peak at 435 cm-1 indicated characteristic vibrational band of ZnO and at 3380, 1643 and 1102 cm-1 the vibrational transitions of the polyol, suggesting that the polyol is bonded to the oxide surface. The photoluminescence spectra of the ZnO samples, which were synthesized at different conditions, showed the same behavior, indicating that the defects states in the oxide could be due zinc and oxygen vacancies. The morphology is dependent on the polyol employed in the synthesis. For the samples synthesized with ethylene glycol (EG) was observed that the morphology change from nanoparticle to nanorods with the addition of water in the synthesis. The data of relative XRD peak intensity ratio of I002/I100 suggest the preferred c-axis oriented growth for the rod-shaped ZnO particles compared to the equiaxial particles. A hexagonal and a “flake” structure were observed for the ZnO synthesized using polyethylene glycol (PEG300) and NaOH, respectively. PSCs were built for all samples of ZnO synthesized and the best result was obtained with ZnO synthesized with NaOH. This result may be due to the better packaging of the ZnO layer, facilitating the electron transport.

INEO / Materiais nanoestruturados, com base em ZnO tem recebido um interesse considerável por causa de suas aplicações em dispositivos optoeletrônicos. Por exemplo, em uma célula solar polimérica, devido à sua baixa função trabalho, elevada mobilidade eletrônica, excelente transparência óptica e natureza ambientalmente amigável, o ZnO torna-se a camada de transporte de elétrons mais utilizada nas células solares polimérica invertidas. Este trabalho visa proporcionar uma visão nos parâmetros que determinam a morfologia de nanopartículas de ZnO e sua influência em células solares invertidas com base em ZnO e P3HT/PCBM. Primeiro, nanopartículas de ZnO foram sintetizadas por hidrólise e condensação de acetato de zinco dihidratado por meio da rota do poliol (com e sem adição de água durante a síntese) ou utilizando o NaOH. Em seguida as técnicas de: difração de raios x (XRD), espectroscopia de absorção na região do infravermelho (FT-IR), espectroscopia de fotoluminescência, microscopia eletrônica de transmissão (TEM) e microscopia eletrônica de varredura com efeito de campo (FE-SEM) foram empregadas para estudar as características químicas e a morfologia do ZnO. Os resultados de XRD mostraram que as nanopartículas obtidas eram compostas da fase hexagonal wurtzita. O pico em 435 cm-1 identificado nos espectros de FT-IR indica a característica banda vibracional do ZnO e em 3380, 1643 e 1102 cm-1 as transições vibracionais do poliol, sugerindo que o poliol está passivando a superfície de óxido. Os espectros de fotoluminescência das amostras de ZnO, que foram sintetizados em diferentes condições, mostraram o mesmo comportamento, indicando que os defeitos no óxido podem ser devido a vacâncias de zinco e oxigênio. Foi observado que a morfologia é dependente o poliol utilizado na síntese. Para as amostras sintetizadas com etileno glicol (EG) observou-se que a morfologia muda de nanopartículas para nanobastões com a adição de água à síntese. Os dados da relação de intensidade de picos relativo de I002/I100, nos difratogramas, sugerem o crescimento preferencial orientado no sentido do eixo-c para as partículas de ZnO com forma de bastões em comparação com as partículas equiaxiais. Poliedros hexagonais e uma estrutura com a forma de folhas foram observados para o ZnO sintetizado usando polietileno glicol (PEG300) e NaOH, respectivamente. Dispositivos foram construídos para todas as amostras de ZnO sintetizado e o melhor resultado foi obtido com ZnO sintetizado com NaOH. Este resultado pode ser devido a melhor empacotamento da camada de ZnO, facilitando o transporte de elétrons. / Nanostructured materials based on ZnO has received considerable interest because of their application in optoelectronic devices. For example, in polymeric solar cell (PSC), due to its low work function, high electron mobility, excellent optical transparency, and environmentally friendly nature, ZnO becomes the most widely used electron transport layer (ETL) in the inverted PSCs. This work aims at providing an insight in the parameters that determine the morphology of ZnO nanoparticles and their influence onto inverted solar cells based on ZnO and P3HT/PCBM. First, ZnO nanoparticles were synthesized by hydrolysis and condensation of zinc acetate dihydrate by polyol route (with and without water addition during the synthesis) or using NaOH. Then, X-ray diffraction (XRD), infrared and photoluminescence spectroscopies, transmission electron microscopy (TEM) and field emission scanning electron microscopy (FE-SEM) were employed to study the chemical characteristic and the morphology of the ZnO. XRD results showed that the nanoparticles obtained were composed of hexagonal wurtzite phase. FT-IR spectra peak at 435 cm-1 indicated characteristic vibrational band of ZnO and at 3380, 1643 and 1102 cm-1 the vibrational transitions of the polyol, suggesting that the polyol is bonded to the oxide surface. The photoluminescence spectra of the ZnO samples, which were synthesized at different conditions, showed the same behavior, indicating that the defects states in the oxide could be due zinc and oxygen vacancies. The morphology is dependent on the polyol employed in the synthesis. For the samples synthesized with ethylene glycol (EG) was observed that the morphology change from nanoparticle to nanorods with the addition of water in the synthesis. The data of relative XRD peak intensity ratio of I002/I100 suggest the preferred c-axis oriented growth for the rod-shaped ZnO particles compared to the equiaxial particles. A hexagonal and a “flake” structure were observed for the ZnO synthesized using polyethylene glycol (PEG300) and NaOH, respectively. PSCs were built for all samples of ZnO synthesized and the best result was obtained with ZnO synthesized with NaOH. This result may be due to the better packaging of the ZnO layer, facilitating the electron transport.

Orientadores: Evandro Conforti, Cristiano de Melo Galle / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e Computação / Made available in DSpace on 2018-08-09T14:44:31Z (GMT). No. of bitstreams: 1 Guimaraes_Murilo_M.pdf: 2868472 bytes, checksum: 35d629f44273794bf3425431f0abbade (MD5) Previous issue date: 2007 / Resumo: O advento das comunicações por fibras ópticas esteve intrinsecamente ligado aos lasers a diodo semicondutor. Posteriormente, principalmente na área de redes metropolitanas, iniciaram-se as aplicações envolvendo o amplificador óptico a semicondutor (SOA, em inglês). O SOA é muito similar ao laser a diodo semicondutor, pois também amplifica a luz incidente através da emissão estimulada, a qual advém da emissão pelos portadores elétricos da região ativa. Estes são bombeados na região ativa através da corrente elétrica injetada na porta elétrica do SOA. A similaridade não é completa devido ao fato do amplificador não possuir realimentação de luz através de uma cavidade óptica ressonante, uma vez que sua região ativa é terminada por faces anti-refletivas. Dessa forma, a luz é amplificada apenas em uma passagem pela região ativa do SOA, sendo também denominado neste caso, SOA-TW, ou de onda caminhante. Desta forma, fazendo-se uma analogia com circuitos, a diferença SOAlaser é semelhante à diferença amplificador-oscilador eletrônico. Devido a esta semelhança, o estudo desenvolvido no presente trabalho, sobre o comportamento da impedância do amplificador óptico a semicondutor, foi baseado em um modelo equivalente de circuito de microondas desenvolvido para o laser a diodo semicondutor. O comportamento da impedância do SOA, composto por seu encapsulamento e chip, é de extrema importância para o controle e aprimoramento de chaveamento eletro-óptico do SOA em redes de última geração. Visando ao aprofundamento deste estudo, análises teóricas a respeito do laser a diodo semicondutor e do amplificador óptico a semicondutor são apresentados. Em seguida, são apresentados os resultados experimentais, com a extração do circuito equivalente do SOA e sua montagem eletro-óptica, com a comparação entre as respostas experimentais e teóricas. Nas considerações finais discutem-se as sugestões para trabalhos futuros sobre o comportamento da impedância eletro-óptica do SOA / Abstract: The advent of communications using optical fiber was always connected, intrinsically, with the semiconductor diode laser. Later, in metropolitan optical networks, the semiconductor optical amplifier (SOA) was introduced to amplify up to eight channels in a WDM (wavelength division multiplex) system. The semiconductor optical amplifier and the semiconductor laser diode are similar since both of them amplify the input light through stimulated emission, which result from electric carriers that are pumped in the active layer through the injection current in the electrical gate in these devices. The similarity is not complete since the SOA has anti-reflection coatings at the end emission faces. Therefore, the light is amplified by the active layer only in one pass; in this case the SOA is called TW SOA (traveling wave SOA). Due to the similarity between the devices, the present study of the SOA impedance behavior was based in an equivalent model from researches about microwave circuits used in the literature to analyze semiconductor diode lasers. The SOA impedance behavior is given by the chip itself and its package; it is important to control and to improve the electrical-optical switch using the SOA for next generation networks. Looking for a deep knowledge about this research, theoretical analyses of the semiconductor diode lasers and SOA was presented in this research. After it, the experimental results are showed with the extraction of the SOA equivalent circuit and the electrical-optical assembly, and the comparison between the experimental and theoretical results was done. At the end of this work, some suggestions for future works are proposed regarding the behavior of the SOA electrical-optical impedance / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

This thesis discusses optoelectronic devices at mm-wave frequencies, focusing on optoelectronic beamforming and non-mechanical beam steering based on an optically excited Fresnel zone plate plasma. The optically controlled zone plate, termed the photo-injected Fresnel zone plate antenna (piFZPA) within this work, is introduced and a comprehensive theoretical framework developed. The design and optimisation of Fresnel zone plates are detailed, which determine the inherent performance of the piFZPA. A range of zone plates were designed, fabricated, and characterised at 94 GHz with up to 46 dBi gain, -26 dB sidelobe levels, and 67% aperture efficiency being measured for a quarter-wave design. The control of (sub) mm-wave beams by optical modulation of the complex permittivity of a semiconductor substrate is discussed. The significance of the free-carrier plasma dynamics, the effective lifetime, surface recombination, and the limits of the substrate which are imposed by the spatial resolution of the free-carrier plasma are highlighted, with the optimisation of these parameters discussed. The passivation quality of high-resistivity silicon wafers were characterised using a mm-wave photoconductance decay method, which yielded lifetime improvements from τ[subscript(eff)] = 60 us up to τ[subscript(eff)] ≈ 4,000 us, resulting in lowered recombination velocities (S = 15 cm/s). W-band characterisations of the passivated wafers illustrate the significance of surface recombination, with measured attenuations of up to 24 dB. Novel theoretical models are developed throughout this thesis, which yield insight into the requirements of optoelectronic devices, and are shown to agree well with measured data. The theoretical framework developed details the requirements, limitations, suitability, and design of piFZPAs at any frequency. A range of transmission-type piFZPAs are demonstrated and characterised at 94 GHz, both on-axis and off-axis, based on a novel architecture, with up to 8% aperture efficiency. Finally, the hybridisation of the piFZPA technique and well established visible display technologies, which has been developed throughout this thesis, enable low-cost, simple, and highly flexible optoelectronic devices, highlighting this method as an attractive solution to adaptive beamforming and non-mechanical steering at mm-wave and submm-wave frequencies.