Miniaturisation of electronic and optoelectronic devices have enabled the realization of system-on-a-chip technology in modern image sensors, where the photo sensor arrays and the corresponding signal processing circuitry are monolithically integrated in a single chip. Apart from intrinsic advantages, the drive towards miniaturisation has been further fuelled by the exotic properties exhibited by semiconductor materials at the nano scale. As the dimension of the material is gradually reduced from the bulk, interesting physical and chemical properties begin to emerge owing to the increased confinement of charge carriers in different spatial dimensions. Solution-processed optoelectronics have revolutionised the field of device physics over recent years due to the superior performance, ease of processing, substrate flexibility, cost-effective production of large-area devices and other advantages associated with the technique. In the present work, solution-processed photo detectors have been fabricated on SiO2/Si substrate facilitating the ease of integration with conventional silicon CMOS technology. The present thesis deals with the successful exploitation of most common point defects in semiconductor nanostructures to reduce the overlap of hole wave function with the envelop wave function of the ground state electron to improve photoconduction. As a result of the investigation process, successful strategies have been devised for the improvement of photoconduction by engineering the defect states. In the first study, the intrinsic copper vacancies and the capping agent thiol have been employed to trap photo holes in photo detectors based on copper indium selenide nanoparticles, thereby allowing the photoelectrons to transit the device. In the second study, the optical excitation of charge carriers into the defect-related band originating from oxygen vacancies further raises the photoconductivity of molybdenum trioxide nanobelts based photodetectors. In the third study, the absence of photoconductivity in zinc selenide based quantum dots has been attributed to the radiative recombination of photogenerated carriers at the donor-acceptor states caused by the self-compensation of point defects in the dots. In the final study, the crucial role of the energy depth of trap states in determining the carrier relaxation dynamics (temporal response) of the photodetector based on SnO2 nanowires has been discussed in detail. .

Orientadores: Evandro Conforti, Carlos Allan Caballero Petersen / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-16T07:18:34Z (GMT). No. of bitstreams: 1 Toazza_AdrianoLuis_D.pdf: 4079607 bytes, checksum: bb3aa0dd52628e849f97cb827da20ffb (MD5) Previous issue date: 2010 / Resumo: A técnica de pré-distorção com a adição de um impulso ao degrau que normalmente chaveia o Amplificador Óptico a Semicondutor - (SOA) , permite diminuir os tempos de chaveamento eletro-óptico do SOA para valores inferiores a nanosegundos, obtendo-se contrastes da luz amplificada na saída da chave acima de 25 dB e bandas de passagem da ordem de 60 nm. Entretanto, estes tempos de chaveamento de alta velocidade vêm acompanhados de efeitos deletérios ligados às flutuações do ganho óptico durante o processo de ligar a chave, do estado "off" para o estado "on". Nesta tese é efetuada a análise destes fenômenos, com boa correspondência com resultados experimentais. Mostram-se, também, caminhos a seguir para diminuir as flutuações de ganho. O estudo aqui apresentado baseia-se no comportamento da impedância da montagem com o SOA em alta frequência, até 20 GHz. A obtenção dos valores dos componentes do circuito equivalente incluem o SOA (a partir de sua porta elétrica) e a montagem de microondas do chaveamento eletro-óptico. O modelo para o SOA foi baseado em um circuito desenvolvido para laser a diodo semicondutor. Os parâmetros do circuito equivalente para a montagem do SOA foram obtidos por técnicas de extração de parâmetros, através de aproximações sucessivas entre as respostas experimentais e teóricas, utilizando um programa desenvolvido neste trabalho. Em seguida, a partir da impedância do SOA, foram estimados os tempos de transição, o casamento em banda larga, assim como a influência do encapsulamento do dispositivo, aprimorando o entendimento do seu comportamento e limitações, com boa correspondência com resultados experimentais / Abstract: Reduction of the Semiconductor Optical Ampli.er (SOA) switching times can be achieved with the pre-distortion technique consisting of impulse(s) addition to the current step that generally switches the SOA. With this technique it is possible to reduce the electro-optical switching time to sub-nanoseconds with a contrast approaching 25 dB between the "off" and the "on" state of the optical gain, and with a bandwidth in excess of 60 nm. However those high speed switching times comes jointly with deleterious effects of overshoot and optical gain fluctuations during the switch state variation from the "off" to the "on" state. This thesis analyzes those phenomena with good correspondence to experimental results, and actions to decrease those deleterious effects are revealed. The results make use of SOA electrical gate impedance measurements up to 20 GHz, with the accomplishment of the SOA equivalent circuit extraction including the effects of the microwave lines and SOA encapsulation. The SOA model was based in the literature results for semiconductor lasers. The parameters extraction was based in a software and in measurements prepared here to obtain the circuit parameters values through successive approximations between practice and theory. Finally, the obtained SOA equivalent circuit was used to find the switching time estimation, the broadband matching, the encapsulation influences, in order to achieve a better theoretical understanding of the deleterious effects. The computer simulated results are in good correspondence with the experimental results / Doutorado / Telecomunicações e Telemática / Doutor em Engenharia Elétrica

Orientadores: Evandro Conforti, Napoleão dos Santos Ribeiro / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-16T11:21:52Z (GMT). No. of bitstreams: 1 Figueiredo_RafaelCarvalho_M.pdf: 10424465 bytes, checksum: b93608291545cc7a53e52e2050a3dc39 (MD5) Previous issue date: 2010 / Resumo: Apresenta-se a modelagem de um circuito elétrico equivalente e a extração de parâmetros de amplificadores ópticos a semicondutor (SOA), a partir de um modelo para lasers semicondutores. Foi realizado um estudo do comportamento da impedância de um SOA em chip, sem encapsulamento, em função da corrente de polarização e em ampla faixa de frequência . de 300 kHz a 40 GHz. A modelagem do circuito equivalente da montagem, a qual é cascateada com os modelos da região ativa do SOA, é apresentada para correntes abaixo e acima da operação em transparência. A metodologia utilizada para a extração dos parâmetros dos elementos parasitas que compõe o circuito é descrita; resultados obtidos através de simulações em programa comercial (Agilent ADS) são comparados com medidas experimentais obtidas em mesa óptica. São apresentados ainda resultados teóricos da impedância do SOA quando desconsiderada a presença dos elementos parasitas da montagem. A modelagem e extração dos parâmetros realizada para o chip foi repetida para SOAs encapsulados, também apresentando boa concordância entre teoria e experimento, reforçando a viabilidade da abordagem utilizada / Abstract: The equivalent electric circuits and its parameters.extraction of semiconductor optical amplifiers (SOA) are attained based on a diode-laser model. Additionally, the impedance behavior of a SOA-chip (without package) was measured as function of the bias current in wide frequency range, from 300 kHz to 40 GHz. In these procedures, the microwave setup used for the SOA current injection was also characterized and its equivalent circuit obtained. Next, a theoretical analysis is developed for this setup for currents below and above the transparency condition. A methodology for the parameters extraction of parasitic elements is also described, as well as the results obtained through simulations using the Agilent ADS software, compared with the experimental data. The optical bench used in the experiments is also described, and theoretical results illustrates the SOA impedance without parasitic elements. The equivalent circuits with parameters.extraction were also obtained for packaged SOAs, with good agreement between theory and experiment, conforming the employed methodology / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

Orientador: Aldário Chrestani Bordonalli / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-18T03:03:31Z (GMT). No. of bitstreams: 1 Magalhaes_EduardoCavalcanti_M.pdf: 2183276 bytes, checksum: 9f71d4d8e8faa9a702090adfeb4a9a6a (MD5) Previous issue date: 2011 / Resumo: Nos últimos anos, os amplificadores ópticos a semicondutor (SOA) têm sido foco de interesse em diversas aplicações. Uma das mais comuns é a de conversor de comprimentos de onda, onde o dispositivo transfere informação entre portadoras ópticas, sem a necessidade de passagem para o domínio elétrico. A mistura de quatro ondas (FWM), a modulação cruzada de ganho (XGM) e a modulação cruzada de fase (XPM) são os principais efeitos não-lineares que ocorrem no SOA e contribuem de forma distinta no processo de conversão. Estes efeitos, e, em particular, o XGM e o FWM, tornam-se proeminentes ao se submeter o dispositivo a elevados níveis de potência de entrada (regime de saturação). Com isso, conversão com ampla banda para sinais modulados em amplitude é relativamente simples para SOAs. Entretanto, estes tendem a falhar quando se utilizam canais modulados em fase, já que a informação não pode ser preservada pelo XGM ou XPM. Assim, este trabalho apresenta um estudo de caracterização empírica de um conversor de comprimentos de onda baseado no efeito FWM de um SOA utilizando-se canais modulados em fase por sinais senoidais de 10 GHz e chaveados (BPSK) a taxas de até 14 Gbps / Abstract: Recently semiconductor optical amplifiers (SOAs) have been the focus of interest in several applications. One of the most common SOA roles is as a wavelength converter, where the device transfers information content among optical carriers in the optical domain. Four wave mixing (FWM), cross-gain modulation (XGM), and cross-phase modulation (XPM) are major nonlinear effects that occur in SOAs and contribute differently in the process of wavelength conversion. These effects, in particular, XGM and FWM, become more prominent when subjecting the device to high levels of input power (saturation regime). SOAs can provide intensity-modulated carrier wavelength conversion with large conversion range. However, they tend to fail for phase modulated carriers since phase information cannot be preserved by either XGM or XPM. Thus, an empirical characterization of wavelength conversion for phase modulated channels based on SOA FWM properties is presented in this work. Phase modulation was implemented by using 10 GHz sinusoidal signals and by BPSK with rates up to 14 Gbps / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

Orientadores: Evandro Conforti, Cristiano de Mello Gallep / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-14T19:57:35Z (GMT). No. of bitstreams: 1 Ribeiro_NapoleaodosSantos_D.pdf: 16714104 bytes, checksum: b2100f0e9b322ce60f4114a173936ab3 (MD5) Previous issue date: 2009 / Resumo: As chaves eletro-ópticas ultrarrápidas, os regeneradores e os conversores em comprimento de onda são dispositivos promissores para serem incorporados nas futuras redes ópticas. Neste trabalho, apresentam-se simulações e respectivas medições relativas a uma técnica de redução do tempo de chaveamento eletro-óptico. Esta técnica baseia-se na injeção de uma combinação de múltiplos pulsos de corrente no interior da região ativa de um amplificador óptico a semicondutor. A partir das simulações, foi estudado o melhor formato do sinal de corrente de injeção no amplificador óptico a semicondutor, assim como possíveis modificações no circuito equivalente deste amplificador visando a uma maior redução do tempo de chaveamento, obtendo-se previsão de valores de tempo de chaveamento em valor recorde, da ordem de 300 ps, para um contraste óptico de 26 dB. Além disso, um regenerador simples tipo 2R (reamplificação e reformatação) e conversor em comprimento de onda utilizando apenas um SOA também é apresentado. Este dispositivo apresentou e cientes resultados de regeneração para diferentes casos de deterioração em taxa de bits de até 13,5 Gbps em um faixa de conversão de alguns nanômetros. Demonstrou-se também ser pouco dependente à polarização óptica do sinal de entrada e capaz de ser integrado a outros dispositivos. Por último, resultados simulados para a implementação de uma futura técnica de alimentação adiante, em conjunto com a injeção de múltiplos pulsos de corrente em SOA, são discutidos. / Abstract: Electrooptical switches, optical regenerators, and wavelength converters are relevant devices for the operation of future optical networks. In this work, measurements and simulations of an electrooptical switching time reduction technique based on multipulse current injection in semiconductor optical ampli.ers (SOA) are presented. Using the simulation results, the best SOA current signal formats, as well as possible improvements in the SOA equivalent circuit to achieve a higher switching time reduction are analyzed, resulting in predictions of switching time values around 300 ps for a 26 dB-optical contrast. In addition, a simple 2R-regenerator (reampli.cation and reshaping) and wavelength converter using just one SOA is presented. This device presented e¢ cient regeneration results for di¤erent deterioration cases at bit rates up to 13.5 Gbps within a wavelength conversion range of some nanometers. Further, this device presented low dependence with the relative optical input signal polarization and feasible integration to other devices. Finally, simulated results for the implementation of a feed-forward technique jointly with multipulse current injection in SOA are discussed. / Doutorado / Telecomunicações e Telemática / Doutor em Engenharia Elétrica

Orientador: Evandro Conforti / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-26T17:49:28Z (GMT). No. of bitstreams: 1 Figueiredo_RafaelCarvalho_D.pdf: 7764328 bytes, checksum: 3a3b008ba1f610e5a7c3ef694ff3f04d (MD5) Previous issue date: 2015 / Resumo: O desempenho de chaves eletro-ópticas baseadas em amplificadores ópticos a semicondutor (SOA), incluindo experimentos e simulações usando diferentes formatos de pulso na injeção de corrente elétrica, é apresentado. Quatro SOAs com características físicas distintas são analisados de acordo com seu comportamento de chaveamento. Em seguida, com o intuito de melhorar a resposta eletro-óptica dos SOAs, uma nova técnica de injeção de multi-impulso (MISIC ¿ Multi-Impulse Step Injected Current) é apresentada, alcançando tempo de subida ultrarrápido (115 ps) com baixo overshoot (< 30 %) e alto contraste óptico (30 dB). Os resultados obtidos podem permitir aplicações usando SOAs, por exemplo, como chaves eletro-ópticas em redes de Data Centers, reduzindo a latência de chaveamento entre os nós e compensando perdas por divisões do sinal. Além disso, os circuitos equivalentes para três diferentes SOAs (dois encapsulados e um sem encapsulamento) são propostos. Os modelos são validados através de comparações dos resultados numéricos e experimentais, com boa concordância. A modelagem é realizada em programas de análise de circuitos, exigindo pouco recurso computacional e possibilitando a inclusão dos elementos parasitas das montagens de micro-ondas e dos chips dos dispositivos / Abstract: The performance of electro-optical space switches based on semiconductor optical amplifiers (SOA), including experiments and simulations using different formats of the electrical current injection pulses, is presented. Four SOAs with distinct physical characteristics are analyzed according to their switching behavior. Then, to improve the SOAs¿ electro-optical response, a new Multi-Impulse Step Injected Current (MISIC) technique is presented, achieving ultrafast switching time (115 ps) with low overshoot (< 30 %) and high optical contrast (30 dB). The results obtained might enable SOA applications, for example, as electro-optical switches in Data Center Networks, reducing switching latency between nodes and compensating signal¿s splitting losses. Furthermore, the equivalent circuits for three different SOAs (one chip-on-carrier and two encapsulated) are proposed. The models are validated by comparisons involving numerical and experimental results, with good correspondence. The modeling is carried out using circuit analysis software, requiring small computational resources and enabling the inclusion of parasitic elements of SOA devices¿ chip and microwave mounts / Doutorado / Telecomunicações e Telemática / Doutor em Engenharia Elétrica

No description available.

Semiconductor based micro- and nano-structures grown in a systematic and controlled way using selective area growth are emerging as a promising route toward devices for integrated optical circuitry in optoelectronics and photonics field. This dissertation focuses on the experimental investigation of the nonlinear optical effects in selectively grown gallium nitride micro-pyramids that act as optical cavities, zinc oxide submicron rods and indium gallium nitride multiple quantum well core shell submicron tubes on the apex of GaN micro pyramids that act as optical antennae. Localized spatial excitation of these low dimensional semiconductor structures was optimized for nonlinear optical light (NLO) generation due to second harmonic generation (SHG) and multi-photon luminescence (MPL). The evolution of both processes are mapped along the symmetric axis of the individual structures for multiple fundamental input frequencies of light. Effects such as cavity formation of generated light, electron-hole plasma generation and coherent emission are observed. The efficiency and tunability of the frequency conversion that can be achieved in the individual structures of various geometries are estimated. By controlling the local excitation cross-section within the structures along with modulation of optical excitation intensity, the nonlinear optical process generated in these structures can be manipulated to generate coherent light in the UV-Blue region via SHG process or green emission via MPL process. The results show that these unique structures hold the potential to convert red input pulsed light into blue output pulsed light which is highly directional.

This thesis describes investigations into the photophysical properties of luminescent materials and their application in optoelectronic devices such as light emitting diodes and photodetectors. The materials used were all solution processable because of the interest in low cost processing of organics. I have investigated the photophysics of 1,4,5,8,9,12-hexamethyltriphenylene, a triphenylene derivative which has its luminescence enhanced by the addition of methyl groups. These groups change the planar shape of the triphenylene molecule into a twisted one, changing the symmetry of the molecule and increasing its dipole moment in absorption and emission by ~4 fold. This increased its rate of radiative deexcitation by ~20 times. In addition, the twisted shape of the molecule prevents intermolecular interactions and concentration effects from affecting the luminescence. This results in an efficient solid-state photoluminescence quantum yield of 31%. This thesis also includes an investigation into phosphorescent polymer dendrimers, designed to have suitable viscosities in solution for inkjet printed OLED applications. A photophysical study of the intra-chain aggregation effects on the luminescence was undertaken in both homopolymers and copolymers with high energy gap spacer units. Using double dendrons to increase the steric protection of the luminescent cores, the best homopolymers achieved 12.1% external quantum efficiency (39.3 cd/A) at 100 cd/m² brightness and the best co-polymer achieved 14.7% EQE (48.3 cd/A) at 100 cd/m². This compares favourably with 11.8% EQE for the best phosphorescent polymer and 16% for the best solution processed dendrimer OLED previously reported. Finally I have applied a solution processed enhancement layer to silicon photodiodes to enhance their ultraviolet response. Using a blend of materials to give favourable absorption and emission properties, 61% external quantum efficiency was achieved at 200 nm, which is better than the 20-30% typical for vacuum deposited lumogen enhancement layers used commercially.

This master's thesis deals with the design of a differential high-gain transimpedance amplifier in TSMC's 0.18 um mixed signal process that utilizes a DC photodiode current cancellation loop and a switching automatic gain control (AGC) with a bilinear gain curve. The amplifier is designed to satisfy the demands of Optical Coherence Tomography applications where the receiver is expected to measure the envelope power of an amplitude modulated sinusoidal optical signal that incorporates a large DC component. Methods of increasing dynamic range and gain linearity through the use of DC photodiode current cancellation and bilinear gain are explored. Effects of changing DC photodiode current on the overall system response is also demonstrated.