The world’s largest particle accelerator, Large Hadron Collider, located at CERN outside Geneva performed its first proton-proton collisions in November 2009. One of the four main experiments is LHCb, studying rare decays of hadrons containing the beauty quark. An essential part of the particle identification in LHCb is made by the two Ring Imaging Cherenkov detectors. These detectors use pixel Hybrid Photon Detectors for detection and imaging of Cherenkov rings. This paper reports on measurements carried out on the Hybrid Photon Detectors, including a discussion of the results. In particular, ageing effect and image stability are studied. A fraction of the photon detectors show a degradation in performance within these fields. / Världens största partikelaccelerator, LHC, belägen vid CERN utanför Genève utförde sina första proton-proton kollisioner i November 2009. Ett av de fyra huvudexperimenten är LHCb, som studerar sällsynta sönderfall av hadroner innehållande b kvarken. En viktig del av partikelidentifikationen i LHCb görs av de två RICH detektorerna. Dessa använder hybrida fotondetektorer för detektering och avbildning av Cherenkov ringar. Denna rapport handlar om mätningar utförda på dessa hybrida fotondetektorer, med en diskussion av resultaten. I synnerhet studeras åldringseffekter och bildstabilitet. En andel av fotondetektorerna visar en degradering i prestanda inom dessa områden.

A Monte-Carlo simulation program of the response of the Endcap Electromagnetic Calorimeter (EEMC) and Shower Maximum Detector (SMD) was developed to determine the ability, of the detectors, to provide y/n° discrimination and calculate the effects crosstalk between readout channels from multianode photomultiplier tubes (MAPMT). The importance of this discrimination process is to allow a better measure of the direct-photon asymmetries, which are then used to calculate the gluon contribution to the proton spin structure. These measurements arise from polarized-proton collisions provided by the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory and are detected using the Solenoidal Tracker at RHIC (STAR), which includes the EEMC and SMD. In order to obtain accurate asymmetry measurements, the photons resulting from 7c° decay must be identified through pion-mass reconstruction to avoid confusing them as direct photons. This Monte-Carlo simulation and reconstruction algorithm successfully identified 60% of the pions from single-pion events and 40% of the pions from two-pion events. The effects of MAPMT crosstalk, as determined by the Monte Carlo, were less than 2% on n° identification, and therefore were determined to be insignificant. / Department of Physics and Astronomy

This thesis describes the fabrication and characterization of GaN homojunction visible-blind ultraviolet (UV) p-i-n avalanche photodiodes (APDs) grown by metalorganic chemical vapor deposition (MOCVD) on free-standing bulk GaN substrates. The objective of this research is to develop GaN UV p-i-n APDs with high linear-mode avalanche gains and the Geiger-mode operation for single photon detection. Low noise, high responsivity, and high detectivity are also required for fabricated APDs used as photodiodes in the photovoltaic mode (zero bias) and the photoconductive mode (low reverse bias). High material defect density and immature fabrication technology have hampered the development of III-nitride APDs in the past. In this thesis, sidewall leakage reduction methods have been developed to achieve significant improvement in dark current density, noise performance, and photo detection performance. A record linear-mode avalanche gain > 10⁵ for GaN APDs was demonstrated at λ = 360 nm. The first Geiger-mode deep UV (DUV) APD using front-illuminated homojunction p-i-n diode structure on a free-standing bulk GaN substrate was also measured with single photo detection efficiency (SPDE) of 1.0 % and dark count probability (DCP) of 0.03 at 265 nm. The performance of fabricated homojunction GaN p-i-n photodiodes was also evaluated in the photoconductive mode as well as the photovoltaic mode. For an 80-µm-diameter device biased at - 20 V (in the photoconductive mode) the dark current density is lower than 40 pA/cm² which is the lowest value achieved for any III-nitride photodiode so far. Its responsivity is 0.140 A/W at 360 nm with an ultraviolet-visible rejection ratio of 8×10³. The room-temperature noise equivalent power is 4.27×10 ⁻¹⁷ W-Hz-[superscript 0.5] and the detectivity D* is 1.66×10¹⁴ cm-Hz[superscript 0.5]-W ⁻¹ at - 20 V. The minimum detectable optical power is as low as 100 fW. They are among the best values reported for reverse-biased GaN p-i-n photodiodes to date.

[Truncated abstract] HgCdTe is the leading semiconductor material for the fabrication of high performance infrared photon detectors, in particular, for detection of radiation beyond the near infrared. State-of-the-art infrared detection and imaging systems are currently based around high density focal plane arrays consisting of HgCdTe photodiodes as detector elements. Despite the high performance of HgCdTe infrared detectors, and the many benefits they can offer to industry and society, their utilisation remains limited due to the high cost of production. The chemical composition and narrow bandgap of the HgCdTe material used for infrared detection means that the material is inherently very susceptible to defect formation caused by the processing procedures required for device fabrication. Consequently, fabrication of HgCdTe photodiode arrays have traditionally been characterised by low yields and high costs for arrays that meet required operability specifications. In this thesis a new photodiode fabrication technology with the potential to improve device yields over traditional fabrication technologies is presented. This new fabrication technology is distinguished from others by the use of plasma-induced p-to-n type conversion of HgCdTe for junction formation. This allows great simplification of the fabrication process and avoids high temperature processing during and after junction formation, and keeps the junction protected from the atmosphere at all stages of fabrication. The development of the photodiode fabrication technology using plasma-induced junction formation has involved characterising the electrical transport properties of the type-converted layers, fabrication and characterisation of photodiodes, and photodiode dark current modelling

Originally issued as author's Ph. D. thesis, University of Canterbury, 2002. / Includes bibliographical references (p. 215-222). Thesis available online from Univ. of Canterbury.

Magnesium diboride MgB2 is an interesting material that was discovered to be a superconductor in 2001. It has a remarkably high critical temperature of 39 K which is much greater than was previously thought possible for a phonon-mediated superconductor. MgB2 was also the first material found to exhibit multiple gap superconductivity. It has two energy gaps, the pi gap with a value of 2.3 meV, and the sigma gap with a value of 7.1 meV. Both the high critical temperature and the multiple large energy gaps make MgB2 an attractive candidate for superconducting devices. While the initial discovery of MgB2 was accompanied by much excitement, the enthusiasm has mostly disappeared due to the lack of progress made in implementing MgB2 in practical devices. The aim of this thesis is to attempt to reinvigorate interest in this remarkable material through a study of a variety of practical superconducting devices made with MgB2 thin films grown by hybrid physical-chemical vapor deposition (HPCVD). Two different methods of fabricating MgB2 Josephson junctions are explored. The first is a sandwich type trilayer configuration with a barrier made by magnetron sputtered MgO. Junctions of this sort have been previously studied and implemented in a variety of devices. While they do show some attractive properties, the on-chip spread in critical current due to barrier non-uniformity was too high to be considered a viable option for use in many-junction devices. By developing a fabrication scheme which utilizes electron beam lithography, modest improvements were made in the on-chip parameter spread, and miniaturization of junction size yielded some insight into the non-uniform barriers. The second approach of creating MgB2 Josephson junctions utilized a planar geometry with a normal metal barrier created by irradiating nano-sized strips of the material with a focused helium ion beam. The properties of these junctions are investigated for different irradiation doses. This new technique is capable of producing high quality junctions and furthermore the parameter spread is greatly reduced as compared to the sandwich type junctions. While more research is necessary in order to increase the IcRn products, these junctions show promise for use in many-junction devices such as RSFQ circuits. Prior to this work, the largest substrates that could be coated with HPCVD grown MgB2 were 2" in diameter. A new chamber was designed and constructed which demonstrated the ability to coat substrates as large as 4". This scaled-up system was used to grow MgB2 films on 1 x 10 cm flexible substrates. A method of fabrication was developed which could pattern these 10 cm long samples into ribbon cables consisting of many high frequency transmission lines. This technology can be utilized to increase the cooling efficiency of cryogenic systems used for RSFQ systems which require many connections between low temperature and room temperature electronics. Finally, a method of producing MgB2 films with thicknesses as low as 8 nm was developed. This is achieved by first growing thicker films and using a low angle ion milling step to gradually reduce the film thickness while still maintaining well connected high quality films. A procedure was developed for fabricating meandering nanowires in these films with widths as low as 100 nm for use as superconducting nanowire single photon detectors (SNSPDs). A study of the transport properties of these devices is first presented. Measurements show low values of kinetic inductance which is ideal for high count rates in SNSPDs. The kinetic inductance measurements also yielded the first measurements of the penetration depth of MgB2 films in the ultra-thin regime. Devices made from these ultra-thin films were found to be photon sensitive by measurements made by our collaborators. / Physics

Silicon photon multipliers, or SiPMs, are single photon detectors that have grown increasing interest in the last decade as an alternative to photomultiplier tubes in many field of physics, engineering and medicine. Compared to PMTs, SiPMs are more compact, rugged and operate at much lower bias voltage, in the order of tens of volts. Moreover they are insensitive to magnetic field and can achieve a very high radiopurity SiPM detectors work on the principle of a diode operated above the breakdown voltage, in Geiger mode. In this condition, the electric field in the depletion region is high enough that the electron-hole pairs, generated by a single photon absorption through photoelectric effect, create secondary charges by impact ionization in a potentially diverging avalanche effect that can be exploited to generate a macroscopical current at the output of the diode. Thanks to this effect, the SiPM is capable of counting the number of impinging photons down to single photon level. Noise sources in the SiPM include dark counts and correlated noise. Dark counts are counts happening when an electron-hole pair is generated in the active volume of the device in absence of photon absorptions. These events are caused either by thermal generation, diffusion from the neutral region or by tunnel effect. Correlated noise events, or counts, on the other hand, are generated when a primary firing cell retriggers after a certain time or cause the triggering of another cell. All these noise sources introduce errors in the photon count by adding fake events to the output signal of the detector.Traditional SiPM application is 511 keV gamma-ray detection in PET machines, using scintillator LYSO crystals to convert a single gamma ray into a flash of visible photons. An application based on the same principle was studied in this thesis by coupling FBK RGB-HD SiPMs with CsI:Tl crystals in order to detect lower energy X and gamma-rays. This setup has proven to be effective in the detection of radiation with energy as low as 5.9 keV with a resolution of 38.3%, which is the minimum value of energy resolution measured with SiPMs coupled to scintillator crystals at such low energy. At the same time it was observed that large area detectors provided a dynamic range wide enough to simultaneously detect radiation ranging from 6.4 keV to 122 keV with minimal saturation. In another activity of this thesis it was developed a simulation software that reproduces the behaviour of a SiPM under different light conditions by taking into account the detector efficiency, the dead time and the recharge behaviour of its cells and theoretical modelizations of the noise parameters that affect the measurement. From a given light profile the simulation generates a waveform that reproduces the one measured during the operation of real SiPMs. This waveform was then analysed using FBK software developed for SiPM characterization and the results showed an excellent agreement between the simulated detector and a reference SiPM. This software will become a useful tool for the design of SiPMs for future experiments because it will allow to tune the properties of the detectors to specific applications and it will reduce the need of layout and process split to find the optimal configuration of the detector parameters.Among all FBK technologies, this work was focused on the position-sensitive LG-SiPM. Unlike standard SiPMs, which have a single output, the LG-SiPM employs a more complex structure that splits the current signal into four output channels with ratios depending on the position of the impinging light on its surface. Center of mass calculations are used to reconstruct the position of the firing cell with precision down to some tens of microns while maintaining the fast time response of SiPMs. An application of the LG-SiPM was studied in the framework of the ARIADNE experiment in collaboration with the university of Liverpool. In this work the LG-SiPM was used to detect scintillation light coming from ionization tracks generated by alpha particles inside a CF4 TPC chamber. The ionized electrons where drifted through the action of a high electric field in the TPC towards a THGEM where they created light with timing depending on the distance of each track segment from the scintillator. The LG detector was able to reconstruct the 3D track particle inside the chamber with an error below 8 mm RMS inside the 40 l chamber and, at the same time, to reconstruct the energy released by the particle as function of time and calculate the total energy of the interacting particle and its linear energy transfer. These results open a novel approach for the TPC position reconstruction that combines the low number of readout channels needed for the LG detector to its time-continuous response which allows to reconstruct the tree-dimensional track of a particle inside the chamber.During the experiment it emerged the presence of an artifact that drifted all the reconstructed tracks towards the centre of the detection area, at the end of the signal. This effect was studied by creating a second simulation software that recreates the electrical behaviour of the LG-SiPM equivalent circuit when one or more cells trigger. It was simulated the output of the circuit with different light conditions and different values of the circuit elements and it was observed that the presence of the artifact was related to low intensity currents flowing through the net of the LG-SiPM metal tracks and quenching resistors. Several simulations were run in order to identify the optimal configuration of parameters for the reduction of this unwanted effect and to implement improvements in future LG-SiPM productions.Another application of the LG-SiPM in the field of radiation detection is the position reconstruction of the scintillation light emitted by gamma-rays in a monolithic crystal. Using a thin CsI:Tl crystal and lowering the detector temperature it was possible to distinguish different positions of interaction on the surface of the detector with an error below 1 mm FWHM. This technology can be effective for the creation of monolithic, position sensitive X and gamma-ray detector with good energy resolution for low energy spectroscopy or medical imaging devices.

[Truncated abstract] Infrared (IR) detectors have many applications, from homeland security and defense, to medical imaging, to environmental monitoring, to astronomy, etc. Increasingly, the wave- length dependence of the IR radiation is becoming important in many applications, not just the total intensity of infrared radiation. There are many types of infrared detectors that can be broadly categorized as either photon detectors (narrow band-gap materials or quantum structures that provide the necessary energy transitions to generate free car- riers) or thermal detectors. Photon detectors generally provide the highest sensitivity, however the small transition energy of the detector also means cooling is required to limit the noise due to intrinsic thermal generation. This thesis is concerned with the tech- nique of resonant-cavity-enhancement of detectors, which is the process of placing the detector within an optically resonant cavity. Resonant-cavity-enhanced detectors have many favourable properties including a reduced detector volume, which allows improved operating temperature, or an improved signal to noise ratio (or some balance between the two), along with a narrow spectral bandwidth. ... Responsivity of another sample annealed for 20 hours at 250C in a Hg atmosphere (ex-situ) also shows resonant performance, but indicates significant shunting due the mirror layers. There is good agreement with model data, and the peak responsivity due to the absorber layer is 9.5×103 V/W for a 100 'm ×100 'm photoconductor at 80K. An effective lifetime of 50.4 ns is extracted for this responsivity measurement. The responsivity was measured as a function of varying field, and sweepout was observed for bias fields greater than 50 V/cm. The effective lifetime extracted from this measurement was 224 ns, but is an over estimate. Photodiodes were also fabricated by annealing p-type Hg(1x)Cd(x)Te for 10 hours at 250C in vacuum and type converting in a CH4/H2 reactive ion etch plasma process to form the n-p junction. There is some degradation to the mirror structure due to the anneal in vacuum, but a clear region of high reflection is observed. Measurements of current-voltage characteristics at various temperatures show diode-like characteristics with a peak R0 of 10 G measured at 80K (corresponding to an R0A of approximately 104 cm2. There was significant signal from the mirror layers, however only negligible signal from the absorber layer, and no conclusive resonant peaks.

Das Ziel dieser Dissertation ist das Schließen der radiometrischen Lücke zwischen der klassischen Radiometrie und der Radiometrie im Bereich weniger und einzelner Photonen. In dieser Arbeit wurden dazu zwei wesentliche Themen bearbeitet. Erstens, die Charakterisierung und Validierung eines neuen radiometrischen Detektorprimärnormals für den Wellenlängenbereich von 400 nm bis 800 nm basierend auf Silizium-Photodioden. Dieses neuartige Primärnormal kann sowohl in der Radiometrie im Bereich weniger Photonen als auch in der klassischen Radiometrie eingesetzt werden, der sogenannte “Predictable Quantum Efficient Detector” (PQED). Der PQED wurde im Rahmen dieser Arbeit charakterisiert und experimentell validiert. Für die Validierung war es nötig, die relativen Unsicherheiten der klassischen Radiometrie und insbesondere der Kryoradiometrie, deutlich zu verringern. Mit der Inbetriebnahme eines neuen Kryoradiometers wurde das Ziel, in den Unsicherheitsbereich von ca. 10E−5 vorzudringen, erreicht. Zweitens, es wurde eine Kalibriermethode für Einzelphotonendetektoren eingesetzt, rückgeführt auf das internationale Einheitensystem, die auf den einzigartigen Eigenschaften von Synchrotronstrahlung basiert. Diese Methode kann benutzt werden um sowohl Freistrahl- als auch fasergekoppelte Einzelphotonendetektoren bei praktisch jeder gewünschten Wellenlänge zu kalibrieren und erreicht im Moment die weltweit geringsten Messunsicherheiten. Mit dem neuen Kryoradiometer, dem PQED und dem auf Synchrotronstrahlung basierenden Kalibrierverfahren sind die erreichbaren Messunsicherheiten in der Radiometrie im Bereich von wenigen Photonen bis zu Strahlungsleistungen im Milliwattbereich deutlich reduziert worden. / This thesis addresses the bridging of the radiometric gap in the transition from classical radiometry to the few and single photon radiometry. In this context, two main tasks were emphasised. First: A new radiometric primary detector standard for wavelengths between 400 nm and 800 nm, suitable for classical and few photon radiometry, the so-called “Predictable Quantum Efficient Detector” (PQED) was characterised and validated. For the validation of the PQED, the relative uncertainties achievable in classical radiometry and, in particular, with cryogenic radiometers had to be reduced to a level of 10E−5 with the commissioning of a new cryogenic radiometer facility. Second: A calibration method for single photon detectors in the visible and NIR has been used which is based on the unique properties of synchrotron radiation. This calibration method allows radiometric single photon detector calibrations with the lowest uncertainties reported so far. This method can be used to calibrate free space and fibre-coupled single photon detectors traceable to the international system of units at practically every desired optical wavelength. With the new cryogenic radiometer, the PQED, and the calibration method based on synchrotron radiation, the uncertainties in radiometry have been significantly reduced in the range from milliwatts of radiant power down to attowatts corresponding to a few photons per second.

No description available.