This thesis investigates the application of plasma immersion ion implantation (PIII) to polymers. PIII requires that a high negative potential be applied to the surface of the material while it is immersed in a plasma. This presents a problem for insulating materials such as polymers, since the implanting ions carry charge to the surface, resulting in a charge accumulation that effectively neutralises the applied potential. This causes the plasma sheath at the surface to collapse a short time after the potential is applied. Measurements of the sheath dynamics, including the collapsing sheath, are performed using an electric probe. The results are compared to theoretical models of the plasma sheath based on the Child-Langmuir law for high voltage sheaths. The theoretical model predicts well the sheath dynamics for conductive substrates. For insulating substrates the model can account for the experimental observations if the secondary electron coefficient is modified, justified on the basis of the poly-energetic nature of the implanting ions. If a conductive film is applied to the insulator surface the problem of charge accumulation can be avoided without compromising the effectiveness of PIII. The requirement for the film is that it be conductive, yet transparent to the incident ions. Experimental results are presented which confirm the effectiveness of the method. Theoretical estimates of the surface potential show that a film of the order of 5nm thickness can effectively circumvent the charge accumulation problem. Efforts to produce and characterise such a film form the final two chapters of this thesis. The optimal thickness is determined to be near the percolation threshold, where a marked increase in conductivity occurs. Spectroscopic ellipsometry is shown to be an excellent method to determine the film thickness and percolation threshold non-invasively. Throughout this work cathodic vacuum arcs are used to deposit thin films and as a source of metal plasmas. The design and construction of a pulsed cathodic vacuum arc forms a significant part of this thesis. Investigations of the cathode spots and power supply requirements are presented.

This thesis investigates the application of plasma immersion ion implantation (PIII) to polymers. PIII requires that a high negative potential be applied to the surface of the material while it is immersed in a plasma. This presents a problem for insulating materials such as polymers, since the implanting ions carry charge to the surface, resulting in a charge accumulation that effectively neutralises the applied potential. This causes the plasma sheath at the surface to collapse a short time after the potential is applied. Measurements of the sheath dynamics, including the collapsing sheath, are performed using an electric probe. The results are compared to theoretical models of the plasma sheath based on the Child-Langmuir law for high voltage sheaths. The theoretical model predicts well the sheath dynamics for conductive substrates. For insulating substrates the model can account for the experimental observations if the secondary electron coefficient is modified, justified on the basis of the poly-energetic nature of the implanting ions. If a conductive film is applied to the insulator surface the problem of charge accumulation can be avoided without compromising the effectiveness of PIII. The requirement for the film is that it be conductive, yet transparent to the incident ions. Experimental results are presented which confirm the effectiveness of the method. Theoretical estimates of the surface potential show that a film of the order of 5nm thickness can effectively circumvent the charge accumulation problem. Efforts to produce and characterise such a film form the final two chapters of this thesis. The optimal thickness is determined to be near the percolation threshold, where a marked increase in conductivity occurs. Spectroscopic ellipsometry is shown to be an excellent method to determine the film thickness and percolation threshold non-invasively. Throughout this work cathodic vacuum arcs are used to deposit thin films and as a source of metal plasmas. The design and construction of a pulsed cathodic vacuum arc forms a significant part of this thesis. Investigations of the cathode spots and power supply requirements are presented.

No description available.

京都大学 / 新制・課程博士 / 博士(工学) / 甲第24612号 / 工博第5118号 / 新制||工||1979(附属図書館) / 京都大学大学院工学研究科航空宇宙工学専攻 / (主査)教授 江利口 浩二, 教授 嶋田 隆広, 教授 鈴木 基史 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

No description available.

No description available.

This investigation examines band gap engineering of the GaAsN alloy by means of plasma ion implantation. The strong redshift of the alloy's band gap is suitable for telecommunication applications and thus stimulated much interest in recent years. Nitrogen (N) ion implantation into gallium arsenide (GaAs) results in a thin shallow N-rich layer below the surface. However, the violent implantation process also modifies the concentrations of gallium and arsenide. The core of this thesis is a novel method for prediction of the band gap from the conditions in the processing plasma.<p>The first important variable, the number of implanted ions, is obtained from the Lieberman model for the current during high-voltage Plasma Ion Implantation (PII). A review of the model's assumptions is provided as well as a comprehensive discussion of the implantation which includes error boundaries. The predicted and measured ion currents agree within error boundaries. The number of implanted ions can therefore be obtained from the prediction.<p>The distribution of the implanted ions was subsequently explored by simulations such as TRIM and TRIDYN. It was found that the nitrogen content in GaAs is limited by the sputtering of the surface atoms. Furthermore, the content of gallium increases near the surface while the content of arsenic decreases. The predicted ratios of the constituents in the implanted layer is such that the alloy cannot form by ion implantation alone; it could be reconciled by annealing.<p>Preliminary samples were produced and tested for the formation of the GaAsN alloy by Raman spectroscopy. No evidence for bonds between N and either Ga or As was found in the as-implanted samples. The thesis concludes with a discussion of the necessary steps to synthesize the GaAsN alloy.

This investigation examines band gap engineering of the GaAsN alloy by means of plasma ion implantation. The strong redshift of the alloy's band gap is suitable for telecommunication applications and thus stimulated much interest in recent years. Nitrogen (N) ion implantation into gallium arsenide (GaAs) results in a thin shallow N-rich layer below the surface. However, the violent implantation process also modifies the concentrations of gallium and arsenide. The core of this thesis is a novel method for prediction of the band gap from the conditions in the processing plasma.<p>The first important variable, the number of implanted ions, is obtained from the Lieberman model for the current during high-voltage Plasma Ion Implantation (PII). A review of the model's assumptions is provided as well as a comprehensive discussion of the implantation which includes error boundaries. The predicted and measured ion currents agree within error boundaries. The number of implanted ions can therefore be obtained from the prediction.<p>The distribution of the implanted ions was subsequently explored by simulations such as TRIM and TRIDYN. It was found that the nitrogen content in GaAs is limited by the sputtering of the surface atoms. Furthermore, the content of gallium increases near the surface while the content of arsenic decreases. The predicted ratios of the constituents in the implanted layer is such that the alloy cannot form by ion implantation alone; it could be reconciled by annealing.<p>Preliminary samples were produced and tested for the formation of the GaAsN alloy by Raman spectroscopy. No evidence for bonds between N and either Ga or As was found in the as-implanted samples. The thesis concludes with a discussion of the necessary steps to synthesize the GaAsN alloy.

科学研究費補助金 研究種目:一般研究(B) 課題番号:17520427 研究代表者:後藤 俊夫 研究期間:1985-1986年度