This research studied the polarization switching during theturned on of a VCSEL. The switching periods and beam profilewere investigated by the variation of the driving current and heat sink temperature of the laser. The laser would present a series of polarization switching before it achieved the stable state. At a laser¡¦s current of 5.5 mA, the laser first output in Y-polarization for a period of T1 after the laser was turned on. Then the laser switched to X-polarization and maintained for a period of T2. In the third period of T3, the laser switched to Y-polarization and followed by a final switch to X-polarization. We found that the switching periods would decrease under higher temperature and larger driving current, while the ratio of T2 /T1 and T3/T2 did not change, approximating to a constant of e2.We also found that the beam profile of X-polarization would change periodically with a period of 0.32 mA in the region of 3.5 to 6.0 mA. These results will help to understand the mechanism of the polarization switching when the laser is turned on.

This research accomplished a series of investigations on the polarization switching of Vertical-Cavity Surface-Emitting Lasers (VCSEL). The research was preceded experimentally and theoretically to observe the variation of the VCSEL¡¦s polarization switching under various polarization optical feedback and various feedback ratios. A VCSEL with significant polarization-switching hysteresis loop was employed in the experiments to study the interaction between the optical feedback and polarization switching. The experimental results matched the theoretical simulations very well. These results could be interpreted with the graphic analysis of the linear gain model of the VCSEL. In the investigation of the polarization-switching hysteresis loop, experiments found that, inside the loop and at some constant current, the polarization switching would be conducted with a switching delay time. The switching delay time was shortened under stronger optical feedback, revealing an exponential dependence between the switching delay time and optical feedback ratio. In the experiments of small current modulation to continuously switch the laser¡¦s polarization, optical feedback could improve the success of the current-driven polarization switching, significantly enhancing its bandwidth. For a large-range tuning of the laser¡¦s current, as the current modulation frequency increased, the polarization-switching current in the increasing-current process would significantly shift toward the high current end, while the polarization-switching current in the decreasing-current process was affected less. These results greatly contribute to the understanding of the VCSEL¡¦s polarization switching.

Abstract The work deals with the experimental study of ferroelectric (FE) performance scaling for nanometer-sized devices. In the emerging and advanced devices, it is desirable to couple FE performance with other functions. This requires integration of nanoscale FEs with other materials, which is especially promising in epitaxial heterostructures. Such heterostructures inevitably possess a large lattice mismatch, the effect of which on FE properties is unknown and is in the focus of the present work. In the study, heteroepitaxial thin and ultrathin films and superlattices of ABO3-type perovskite structure FEs were used, with A = Pb, Ba, Sr, K, and N, and B = Ti, Zr, Nb, and Ta. FE domains and local polarization switching were explored on the nanometer scale using piezoresponse force microscopy. The experiment was modified that allowed achieving images with high contrast and lateral resolution, and also allowed analysis of nanodomains in lateral capacitor configuration. Local properties were related to a macroscopic response. For this, the method of simultaneous on-wafer low-frequency impedance measurements was optimized allowing studies of thin and ultrathin (to 5 nm) films in a broad range of conditions and regimes. Experimental studies have reveled phenomena which cannot be explained in the frame of the existing theories. The observed new effects are important for applications such as multistate memory devices, storage capacitors, and FE tunnel junction devices.

Investigations of polarization switching over broad time and electric field domains, in various modified Pb-based perovskite ferroelectrics, were systematically performed by ferroelectric switching current transient and bipolar drive P-E responses. Studies were performed from E«Ec to E»Ec, where Ec is the coercive field These investigations have shown the presence of broad relaxation time distributions for the switching process, which can extend over several decades in order of magnitude in time, and where the distribution is strongly dependent on the applied electric field. By performing the study of domain dynamics and polarization switching over extremely broad time domains (10⁻⁸ t < 10² sec), more complete information has been obtained that allows for development of a better mechanistic understanding. Prior polarization kinetics studies have focused on relatively narrow time ranges, and were fit to the Avarami equation, which contains a single relaxation time. However, our broad band width polarization dynamics and frequency relaxation studies have been fit to multiple stretched exponential functions extending over decades of order of magnitude in the time domain. Stretched exponential functions for domain nuclei formation, and for domain variant growth have been found. For example, [001]c, [110]c, and [111]c oriented PZN-4.5%PT crystals, nucleation was found to be a volume process (n=3) rather than just a domain wall restricted process. Consequently, nucleation is heterogeneous. And, growth of a domain variant with reversed polarization was found to be a boundary process (n=2), involving diffuse or rough domain walls. We have extended these studies to various types of ferroelectrics including hard, soft and relaxor types. / Master of Science

<p>As a scalable and CMOS compatible novel ferroelectric material, the ferroelectric HZO thin film has been the promising material for various applications and continues to attract the attention of researchers. Achieving strong ferroelectricity and fast switching speed in ultrathin FE HZO film are crucial challenges for its applications towards scaled devices.</p> <p>The ferroelectric and anti-ferroelectric properties of HZO are investigated systematically down to 3 nm. The ferroelectric polarization, switching speed and the impact of ALD tungsten nitride electrodes are studied. Record high Pr on FE HZO and record high PS on AFE HZO are achieved with WN electrodes, especially in ultrathin sub-10 nm regime. The polarization switching speed of FE and AFE HZO, associated with C-V frequency dispersion, are also qualitatively studied. On the other side of the scaling limit, ferroelectric/dielectric stack superlattice structure is found to enhance the ferroelectricity in thick films which would have severely degraded.</p> <p>Ultrafast direct measurement on the transient ferroelectric polarization switching is used to study the switching speed in FE HZO with a crossbar MFM structure. Sub-nanosecond characteristic switching time of 925 ps was achieved, supported by the nucleation limited switching model. The impact of electric field, film thickness and device area on the polarization switching speed is systematically studied. The ferroelectric switching speed is significantly improved compared to previous reports and more importantly is approaching GHz regime, suggesting FE HZO to be competitive in high-speed non-volatile memory technology. Record fast polarization switch speed of 360 ps is obtained in sub-μm crossbar array FE HZO MFM devices. It also unveils that domain wall propagation speed in HZO is the limiting factor for switch speed and more aggressively scaled devices will offer much faster switch speed.</p> <p>The first experimental determination of nucleation time and domain wall (DW) velocity by studying switching dynamics of ferroelectric (FE) hafnium zirconium oxide (HZO) was performed. Experimental data and simulation results were used to quantitatively study the switching dynamics. The switching speed is degraded in high aspect ratio devices due to the longer DW propagation time or with dielectric interfacial layer due to the required additional tunneling and trapping time by the leakage current assist switch mechanism.</p>

<div>Germanium-based MOS device which is considered as one of the promising alternative channel materials has been studied with well-known FinFET, nanowire structures and HKMG (High-k metal gate). Recent introduction of Ferroelectric (FE) Zr-doped HfO₂ (Hf_xZr_1-xO₂, HZO) has opened various possibilities both in memory and logic</div><div>applications.</div><div><br></div><div>First, integration of FE HZO into the conventional Ge platform was studied to demonstrate Ge FeFET. The FE oxide was deposited with optimized atomic layer deposition (ALD) recipe by intermixing HfO₂ and ZrO₂. The HZO film was characterized with FE tester, XRD and AR-XPS. Then, it was integrated into conventional gate stack of Ge devices to demonstrate Ge FeFETs. Polarization switching was measured with ultrafast measurement set-up down to 100 ps.</div><div><br></div><div>Then, HZO layer was controlled for the first demonstration of hysteresis-free Ge negative capacitance (NC) CMOS FinFETs with sub-60mV/dec SS bi-directionally at room temperature towards possible logic applications. Short channel effect in Ge NCFETs were compared with our reported work to show superior robustness. For smaller widths that cannot be directly written by the e-beam lithography tool, digital etching on Ge fins were optimized.</div><div>Lastly, Ge FeFET-based synaptic device for neuromorphic computing was demonstrated. Optimum pulsing schemes were tested for both potentiation and depression which resulted in highly linear and symmetric conductance profiles. Simulation was done to analyze Ge FeFET's role as a synaptic device for deep neural network.</div>

Ferroelectric crystals are commonly used in nonlinear optics for frequency conversion of laser radiation. The quasi-phase matching (QPM) approach uses a periodically modulated nonlinearity that can be achieved by periodically inverting domains in ferroelectric crystals and allows versatile and efficient frequency conversion in the whole transparency region of the material. KTiOPO4 (KTP) is one of the most attractive ferroelectric non-linear optical material for periodic domain-inversion engineering due to its excellent non-linearity, high resistance for photorefractive damage, and its relatively low coercive field. A periodic structure of reversed domains can be created in the crystal by lithographic patterning with subsequent electric field poling. The performance of the periodically poled KTP crystals (PPKTP) as frequency converters rely directly upon the poling quality. Therefore, characterization methods that lead to a deeper understanding of the polarization switching process are of utmost importance. In this work, several techniques have been used and developed to study domain structure in KTP, both in-situ and ex-situ. The results obtained have been utilized to characterize different aspects of the polarization switching processes in KTP, both for patterned and unpatterned samples. It has also been demonstrated that it is possible to fabricate sub-micrometer (sub-μm) PPKTP for novel optical devices. Lithographic processes based on e-beam lithography and deep UV-laser lithography have been developed and proven useful to pattern sub- μm pitches, where the later has been the most convenient method. A poling method based on a periodical modulation of the K-stoichiometry has been developed, and it has resulted in a sub-μm domain grating with a period of 720 nm for a 1 mm thick KTP crystal. To the best of our knowledge, this is the largest domain aspect-ratio achieved for a bulk ferroelectric crystal. The sub-micrometer PPKTP samples have been used for demonstration of 6:th and 7:th QPM order backward second-harmonic generation with continuous wave laser excitation, as well as a demonstration of narrow wavelength electrically-adjustable Bragg reflectivity. / QC 20100930

Nonlinear optical frequency conversion is one of the most important key techniques in order to obtain lasers with wavelengths targeted for specific applications. In order to realize efficient and tailored lasers, the quasi-phase-matching (QPM) approach using periodically-poled ferroelectric crystals is getting increasingly important. Also understanding of damage mechanisms in nonlinear materials is necessary to be able to design reliable and well working lasers. This is especially true for high power application lasers, which is a rapidly growing field, where the damage problem normally is the ultimate limiting factor. In this thesis work, several promising novel ferroelectric materials have been investigated for nonlinear optical applications and the emphasis has been put on QPM devices consisting of periodically-poled structures. The materials were selected from three different types of ferroelectric materials: 1) MgO-doped stoichiometric LiNbO3 (MgO:SLN) and LiTaO3 (MgO:SLT), and non-doped stoichiometric LiTaO3 (SLT), 2) KTiOPO4 (KTP) and its isomorphs RbTiOPO4 (RTP), and 3) KNbO3 (KN). The focus in our investigations have been put on the spontaneous polarization switching phenomena, optimization of the periodic poling conditions, and the photochromic optical damage properties which were characterized by the help of blue light-induced infrared absorption (BLIIRA) measurements. With electrical studies of the spontaneous polarization switching, we were able to determine quantitatively, and compare, the coercive field values of different materials by applying triangularly shaped electric fields. We found that the values of the coercive fields depended on the increase rate of the applied electric field. The coercive field of KN was the lowest (less than 0.5 kV/mm) followed by the ones of KTP, SLT, and MgO:SLT (1.5 to 2.5 kV/mm). MgO:SLN, and RTP had relatively high coercive fields, approximately 5.0 to 6.0 kV/mm, respectively. Based on the domain switching characteristics we found, we successfully fabricated periodically-poled devices in all of the investigated materials with 30 μm periodicities and sample thickness of 1 mm. Blue light-induced infrared absorption (BLIIRA) has been characterized for unpoled bulk and periodically-poled samples using a high-sensitivity, thermal-lens spectroscopy technique. SLT showed a large photorefraction effect and the BLIIRA signal could not be properly measured because of the large distortion of the probe beam. The rise and relaxation time of BLIIRA, after switching the blue light on and off was in a time span of 10 to 30 sec except for KTP and its isomorphs, which needed minutes to hours in order to saturate at a fixed value. KN and MgO:SLN showed the lowest susceptibility to the induced absorption. Periodic poling slightly increased the susceptibility of KTP, MgO:SLT, and KN. Relatively high thresholds were observed in MgO:SLT and KN. By increasing the peak-power intensity of the blue light, the induced absorption for MgO:SLN, KTP and KN saturated at a constant value while that of MgO:SLT increase in a constant fashion. This trend is critical issue for the device reliability at high-power applications. / QC 20100830