Thesis (Ph.D.) -- McMaster University, 1998. / Includes bibliographical references. Also available via World Wide Web.

Thesis (Ph.D.) -- McMaster University, 1998. / Includes bibliographical references (leaves 185-191). Also available via World Wide Web.

Thesis (Ph. D.)--University of Washington, 2004. / Vita. Includes bibliographical references (leaves 87-97).

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 181-188).

Les transitions intersousbandes (ISB) sont des transitions d’énergie entre des états électroniques dans un puits quantique. Les nanostructures GaN/AlGaN sont prometteuses pour le développement de composants optoélectroniques ISB pouvant couvrir la totalité de la gamme infrarouge. Leur large décalage de bande de conduction (~1.8 eV pour les systèmes GaN/AlN) et temps de vie ISB inférieurs au picoseconde les rendent attractifs pour l’optronique ultra-rapide en régime infrarouge courte longueur d’onde (SWIR, 1-3 µm) et moyenne longueur d’onde (MWIR, 3-8 µm). De plus, la grande énergie de phonon longitudinal-optique du GaN (92 meV, 13 µm) offre la possibilité de développer des composants ISB couvrant la bande 5-10 THz, interdite au GaAs, et opérant à température ambiante.Le travail décrit dans ce manuscrit a eu pour objectif d'améliorer les performances des technologies ISB GaN/AlGaN et de contribuer à une meilleure compréhension des problématiques posées par leur extension à la gamme des THz. D’une part, la photodétection ISB nécessite le dopage n des nanostructures. Dans ce travail de thèse, on étudie le Si et le Ge en tant que dopants de type n potentiels pour le GaN. D’autre part, la présence de champs électriques internes dans la direction de confinement des hétérostructures plan c constitue l’un des principaux défis de la technologie GaN ISB. C'est pourquoi on étudie la possibilité d’utiliser des orientations cristalline non-polaires a ou m alternatives pour obtenir des systèmes opérant sans l’influence de ces champs électriques.Concernant l'étude du Ge et du Si comme dopants potentiels, on montre que l’incorporation de Ge dans des couches mince de GaN n’affecte pas leur morphologie, mosaïcité ni photoluminescence. Les propriétés bande-à-bande des nanostructures GaN/AlGaN plan c étudiées sont indifférentes à la nature du dopant, mais les structures à grand désaccord de maille voient leur qualité structurale améliorée par le dopage Ge. Concernant l’alternative non-polaire, on compare des structures à multi-puits quantiques GaN/AlN plan a et plan m. Les meilleurs résultats en termes de performances structurales et optiques (bande-à-bande et ISB) sont obtenues pour les structures plan m. Elles montrent de l’absorption ISB à température ambiante couvrant la fenêtre SWIR, avec des performances comparables aux structures plan c, mais avec une qualité structurale trop faible pour envisager la fabrication de composants. En incorporant du Ga dans les barrières d’AlN, on réduit de désaccord de maille et donc la densité de fissures. Ces structures plan m montrent de l’absorption ISB à température ambiante dans la gamme MWIR 4.0-4.8 µm, mais présentent toujours des défauts de structure. Finalement, on a étendu l’étude à la gamme lointain infrarouge, en utilisant des barrières d’AlGaN avec une composition bien plus basse en Al. Les structures plan m étudiées présentent une excellente qualité cristalline, sans défauts de structures, et présentent de l’absorption intersousbande à basse température entre 6.3 et 37.4 meV (1.5 et 9 THz). Ce résultat constitue une démonstration expérimentale de la faisabilité de composants GaN opérant dans la bande 5-10 THz, interdite aux technologies GaAs. / Intersubband (ISB) transitions are energy transitions between electronic states in a quantum well. GaN/AlGaN nanostructures have emerged as promising materials for new ISB optoelectronics devices, with the potential to cover the whole infrared spectrum. Their large conduction band offset (~1.8 eV for GaN/AlN) and sub-picosecond ISB recovery times make them appealing for ultrafast photonics devices in the short-wavelength infrared (SWIR, 1-3 µm), and mid-wavelength infrared (MWIR, 3-8 µm) regions. Moreover, the large energy of GaN longitudinal-optical phonon (92 meV, 13 µm) opens prospects for room-temperature ISB devices covering the 5-10 THz band, inaccessible to GaAs.The work described in this thesis has aimed at improving the performance and understanding of the material issues involved in the extension of the GaN/AlGaN ISB technology to the THz range. On the one hand, ISB photodetection requires n-type doping of the active nanostructures. In this work, we explore Si and Ge as potential n-type dopants for GaN. On the other hand, the presence of internal electric fields in the confinement direction of polar c-plane heterostructures constitutes one of the main challenges of the GaN-based ISB technology. In this thesis, we address the use of nonpolar a or m crystallographic orientations as an alternative to operate without the influence of these electric fields.Regarding the use of Si and Ge as n-type dopants for GaN, we show that the use of Ge as a dopant does not affect the morphology, mosaicity and photoluminescence properties of the doped GaN thin films. In the c-plane GaN/AlGaN heterostructures, no effect on the band-to-band properties was observed, but the structures with high lattice mismatch showed better mosaicity when doped with Ge. Regarding the alternative of nonpolar GaN, we compared GaN/AlN multi-quantum wells grown on a and m nonpolar free-standing GaN substrates. The best results in terms of structural and optical (both band-to-band and ISB) performance were obtained for m-plane structures. They showed room-temperature ISB absorption covering the whole SWIR spectrum, with optical performance comparable to polar c-plane structures, in spite of a too low structural quality to consider device processing. By introducing Ga in the AlN barriers, the lattice mismatch of the structure is reduced, leading to lower densities of cracks. Such m-plane structures showed room-temperature ISB absorption tunable in the 4.0-5.8 µm MWIR range, but still with structural defects. Finally, we extended the study to the far-infrared range, using AlGaN barriers with much lower Al content. As a result, the studied m-plane structures displayed an excellent crystalline quality, without extended defects, and showed low-temperature ISB absorption in the 6.3 to 37.4 meV (1.5 to 9 THz) range. This result constitutes an experimental demonstration of the feasibility of GaN devices for the 5-10 THz band, forbidden to GaAs-based technologies.

[pt] A energia é assunto estratégico para a grande maioria dos países e indústrias no mundo. O consumo atual energético é de 138,32 TWh por ano e é previsto um aumento de 44% até o ano de 2030 o que demonstra um mercado em expansão. Porém, a sociedade atual exige soluções energéticas que causem o menor impacto ambiental possível, colocando em dúvida o uso das fontes de energia utilizadas atualmente. O uso da energia solar é uma alternativa para auxiliar no atendimento da futura demanda de energia. O seu principal entrave é o custo de produção de energia ser superior as fontes de energia atuais, principalmente o petróleo. Contudo nos últimos 10 anos foi verificado um crescimento exponencial na quantidade de módulos fotovoltaicos instalados em todo mundo. Nesse trabalho é realizado um estudo sobre célula solares com poços quânticos. O uso de poços quânticos já foi apontado como ferramenta para aumentar a eficiência de células fotovoltaicas. O objetivo é descrever uma metodologia baseada em algoritmos genéticos para projeto e análise desse tipo de dispositivo e estabelecer diretivas para se construir uma célula otimizada utilizando esta tecnologia. Os resultados obtidos estão de acordo com dados experimentais, demonstram a capacidade dos poços quânticos em aumentar a eficiência de uma célula e fornecem uma ferramenta tecnológica que espera-se contribuir para o desenvolvimento do país no setor energético. / [en] The energy is a strategical issue for the great majority of the countries and industries in the world. The current world energy consumption is of 138,32 TWh per year and is foreseen an increase of 44% until the year of 2030 which demonstrates a market in expansion. However, the society demands energy solutions that cause as least ambient impact as possible, putting in doubt the use of the current technologies of power plants. The utilization of solar energy is an alternative to assist in the attendance of the future demand of energy. Its main impediment is the superior cost of energy production in comparison with the current power plants, mainly the oil based ones. However in last the 10 years an exponential growth in the amount of installed photovoltaics modules worldwide was verified. In this work a study on solar cell with quantum wells is carried through. The use of quantum wells already was pointed as tool to increase the efficiency of photovoltaics cells. The objective is to describe a methodology based on genetic algorithms for project and analysis of this type of device and to establish directive to construct an optimized cell using this technology. The results are in accordance with experimental data, that demonstrates the capacity of the quantum wells in increasing the efficiency of a cell and supply a technological tool that expects to contribute for the development of the country in the energy sector.

xiv, 114 p. A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / Electron spin coherence can arise through a coherent superposition of two spin states in the conduction band of a semiconductor and can persist over remarkably long time and length scales. The robust nature of electron spin coherence makes it an excellent model system for exploring coherent quantum phenomena in semiconductors. This dissertation presents both spectral- and time-domain nonlinear optical studies of electron spin coherence through Λ-type three-level systems in two- and zero-dimensional semiconductor systems. The spectral domain study focuses on the experimental realization of electromagnetically induced transparency (EIT), a phenomenon that exploits destructive interference induced by the spin coherence. Coherent Zeeman Resonance (CZR), a precursor to EIT, is demonstrated in two 2D systems, a GaAs mixed-type quantum well (MTQW) and a modulation doped CdTe quantum well (QW). For these studies, Λ-type three-level systems are formed via dipole coupling of a trion to two electron spin states. The CZR response can be described qualitatively by effective density matrix equations. In addition, effects of manybody Coulomb interactions on CZR are investigated by varying the electron density in the MTQW via optical carrier injection. Time-domain studies based on transient differential transmission (DT) are carried out to explore the excitation, manipulation, and detection of electron spin coherence and to better understand how manybody interactions affect coherent nonlinear optical processes in semiconductors. While electron spin coherence can be formed and detected via resonant excitation of excitons or trions, a surprising observation is that injecting excitons into the 2D electron gas in a modulation doped CdTe QW can significantly alter the oscillatory nonlinear response of the electron spin coherence, while the response remains qualitatively unchanged when trions are injected. These behaviors are attributed to an interplay between manybody effects and carrier heating generated by trion formation from excitons. Finally, donor-bound electrons in GaAs are used as a model of localized electron spins. Spin decoherence of order 10 ns, limited by nuclear hyperfine interactions, is observed. Electron spin rotation induced by a nearly resonant laser pulse is also observed, opening the door for further work on mitigating electron spin decoherence time through optical spin echoes. / Adviser: Hailin Wang

xvi, 143 p. : ill. (some col.) / Electron spins form a two-level quantum system in which the remarkable properties of quantum mechanics can be probed and utilized for many applications. By learning to manipulate these spins, it may be possible to construct a completely new form of technology based on the electron spin degree of freedom, known as spintronics. The most ambitious goal of spintronics is the development of quantum computing, in which electron spins are utilized as quantum bits, or qubits, with properties that are not possible with classical bits. Before these ideas can become reality, a system must be found in which spin lifetimes are long enough and in which spins can be completely controlled. Semiconductors are an excellent candidate for electron spin control since they can be integrated into on-chip devices and produced on a scalable level. The focus of this dissertation is on electron spin control in two different semiconductor systems, namely a two-dimensional electron gas in a modulation-doped quantum well and donor-bound electrons in bulk semiconductors. Both systems have been studied extensively for a variety of purposes. However, the ability to manipulate spins has been elusive. In this dissertation, the first experimentally successful demonstration of electron spin control in a two-dimensional electron gas is presented, in which ultrafast optical pulses induce spin rotations via the optical Stark effect. Donor-bound electron spin manipulation in bulk semiconductors is also investigated in this dissertation. Important information was obtained on the limiting factors that serve to prohibit spin control in this system. By taking these new factors into account, it is our hope that full electron spin control can eventually be accomplished in this system. Finally, through the course of investigating electron spin dynamics, a strange nonlinear optical behavior was observed in a bilayer system, which was determined to result from a coupling of optical interactions with tunneling rates between layers. The data suggest that there is a strong interplay between interlayer and intralayer correlations in this system. Investigations into the nature of this interaction were undertaken and are presented in the last part of this dissertation. This dissertation includes previously published and unpublished co-authored material. / Committee in charge: Dr. Daniel Steck, Chair; Dr. Hailin Wang, Advisor; Dr. Jens Nockel, Inside; Dr. John Toner, Inside; Dr. Andrew Marcus, Outside

xvii, 110 p. : ill. (some col.) / Electron spin states in semiconductors feature long coherence lifetimes, which have stimulated intense interest in the use of these spins for applications in spin based electronics and quantum information processing (QIP). A principal requirement for these spins to be viable candidates in QIP is the ability to coherently control the spins on timescales much faster than the decoherence times. The ability to optically control the spin state can meet this requirement. The spin states of electrons exhibit strong radiative coupling to negatively charged exciton (trion) states, and this radiative coupling makes coherent optical control of spin states possible. This dissertation presents experimental demonstration of coherent control of an electron spin ensemble in a two-dimensional electron gas in a CdTe quantum well. We present two complimentary techniques to optically manipulate these electron spins using a Raman transition. The first demonstration is with a single off-resonant ultrafast optical pulse. This ultrafast pulse acts like an effective magnetic field in the propagation direction of the optical pulse. The second experiment utilizes phase-locked Raman resonant pulse pairs to coherently rotate the quantum state, where the relative phase of the pulse pair sets the axis of rotation. The Raman pulse pair acts like a microwave field driving the spin states. This research demonstrates two significant contributions to the field of coherent optical interactions with semiconductors. First, we have advanced the potential use of electron spin ensembles in semiconductors for optics based quantum information processing hardware through our demonstration of coherent spin flips and complete coherent control. Second, we have experimentally realized full coherent control through the use of phase-locked Raman pulse pairs that overcomes inherent limitations of the single-pulse optical rotation technique, which is the current standard technique used in coherent control. This dissertation includes previously published and unpublished co-authored material. / Committee in charge: Dr. Miriam Deutsch, Chairperson; Dr. Hailin Wang, Advisor; Dr. Steven van Enk, Member; Dr. Raghuveer Parthasarathy, Member; Dr. Catherine Page, Outside Member

abstract: InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe. Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges from 0.0503 to 0.0645 for the sample set, and ion channeling measurements indicate that the Bi atoms are substitutional. The X-ray diffraction measurements show a diffraction sideband near the main (004) diffraction peak, indicating that the Bi mole fraction is not laterally uniform in the layer. The average out of plane tetragonal distortion is determined by modeling the main and sideband diffraction peaks, from which the average unstrained lattice constant of each sample is determined. By comparing the Bi mole fraction measured by random Rutherford backscattering with the InAsBi lattice constant for the sample set, the lattice constant of zinc blende InBi is determined to be 6.6107 Å. Several InAsBi quantum wells tensilely strained to the GaSb lattice constant with dilute quantities of Bi are characterized using photoluminescence spectroscopy. Investigation of the integrated intensity as a function of carrier excitation density spanning 5×1025 to 5×1026 cm-3 s-1 indicates radiative dominated recombination and high quantum efficiency over the 12 to 250 K temperature range. The bandgap of InAsBi is ascertained from the photoluminescence spectra and parameterized as a function of temperature using the Einstein single oscillator model. The dilute Bi mole fraction of the InAsBi quantum wells is determined by comparing the measured bandgap energy to that predicted by the valence band anticrossing model. The Bi mole fraction determined by photoluminescence agrees reasonably well with that estimated using secondary ion mass spectrometry. / Dissertation/Thesis / Masters Thesis Materials Science and Engineering 2016