Electron spin relaxation and carrier recombination were investigated in gallium indium nitride arsenide (GaInNAs) multiple quantum wells, using picosecond optical pulses. Pump-probe experiments were carried out at room temperature, using pulses produced by a Ti:sapphire pumped optical parametric oscillator. The peak wavelengths of the excitonic resonances for the quantum well samples were identified using linear absorption measurements, and were found to be in the range 1.25µm-1.29µm. Carrier recombination times were measured for three samples of varying nitrogen content, and were observed to decrease from 548 to 180ps as nitrogen molar fractions were increased in the range 0.45-1.24%. Carrier recombination times were also measured for samples which had undergone a post-growth annealing process, and were found to be signicantly shorter compared to times measured for as-grown samples. Electron spin relaxation time was investigated for samples with quantum well widths in the range 5.8-8nm, and was found to increase with increasing well width, (i.e. decreasing quantum confinement energy), a trend predicted by both D'Yakonov-Kachorovskii and Elliott-Yafet models of spin relaxation in quantum wells. In a further study, longer spin relaxation times were exhibited by samples containing higher molar fractions of nitrogen, but having nominally constant quantum well width. Spin relaxation times increased from 47ps to 115ps for samples containing nitrogen concentrations in the range 0.45-1.24%. Decreases in spin relaxation time were observed in the case of those samples which had been annealed post-growth, compared to as-grown samples. Finally, all-optical polarisation switching based on spin relaxation of optically generated carriers in GaInNAs multiple quantum wells was demonstrated.

Ce manuscrit présente une étude sur les ondes de spin de vecteur d'onde nul par le moyen de la rotation Kerr résolue en temps. Les ondes de spin sont générées dans un puits quantique CdMnTe dopé n, ce qui introduit de la complexité dans le système. Le résultat principal de cette étude est l'apparition d'un anticroisement de mode d'excitation du gaz d'électron appelé onde de spin et du mode d'excitation des spins localisés sur les sites des ions magnétiques. Cet effet est provoqué par le couplage des deux systèmes de spin par l'interaction d'échange. On accède alors à la mesure de la polarisation du gaz bidimensionnel d'électrons qui ce compare très bien à la théorie tenant compte de l'augmentation de la polarisation par les effets à N-corps. Une partie de ce manuscrit est consacré à la mise en place expérimentale de la rotation Kerr résolue en temps. On étudie ensuite l'onde de spin pour les champs magnétiques hors résonance. On montre que le temps de relaxation de l'onde n'est pas encore complètement compris, même si nous décrivons un modèle de relaxation inhomogène. Puis nous étudions finalement la résonance où nous montrons que la description habituelle en champs moyen ne convient pas, et nous proposons un modèle au delà de cette approximation qui permet une mesure de la polarisation du gaz bidimensionnel d'électrons en accord avec la théorie. / This manuscript present a study of nul wave vector spin flip waves by time resolved Kerr rotation. Spin flip waves are generated in a n doped CdMnTe quantum well, increasing the complexity of the system. The main result of this study is the apparition of an anticrossing between the excitation mode of the electron gaz called spin flip wave and the excitation mode of localized spin on magnetic ions. This effect is caused by the coupling of the two spin sytem by the exchange interaction. We acces then to the gaz spin polarization which is compared to theorie explaining the enhancement of the polarization by many-body effects. A part of this manuscript is dedicated to the experimental set-up of the time resolved Kerr rotation. Next, we study the spin flip wave for magnetic field below the resonance. We show that the relaxation time of the spin wave is not well understand even if we describe a model of inhomogeneous relaxation. Finally we study the resonance and we show that the mean field description don't work and we propose a model beyond the mean field which allow a measurement of the spin polarization of electron gas in agreement with the theorie.

[pt] As tecnologias envolvendo detectores de infravermelho são consideradas de emprego dual, ou seja, podem ser empregadas tanto no meio civil quanto no militar. No meio civil, tais detectores podem ser utilizados como meio auxiliar na formulação de diagnósticos médicos, em inspeções de rotina nas indústrias, no controle de pragas da agricultura etc.. E no meio militar os equipamentos envolvendo detectores de infravermelho (visão noturna) são comumente empregados em situações táticas, com o objetivo de se obter uma situação de vantagem sobre o inimigo. Esta dissertação teve por objetivo avaliar de forma sistemática o desempenho de detectores de infravermelho baseados na heteroestrutura de poços quânticos múltiplos de InGaAs/InAlAs ao se variar a densidade do elemento dopante (silício) no poço. Em um reator do tipo MOVPE foi realizado o crescimento epitaxial das heteroestruturas que foram caracterizadas de acordo com as técnicas de difração de raios X, efeito Hall, fotoluminescência e absorção. Em seguida, elas foram processadas, tomando forma de dispositivo. A partir da caracterização do dispositivo final, com base nas principais figuras de mérito de um fotodetector (corrente de escuro, fotocorrente, responsividade e detectividade), foi possível obter conclusões importantes a respeito da influência da dopagem em poços quânticos no desempenho de fotodetectores do tipo QWIPs (Quantum Well Infrared Photodetectors). / [en] Infrared detectors are considered of dual employment technologies, ie they can be employed both in the civilian and military environment. With respect to the civilian environment, such detectors can be used, among other applications, as an auxiliary device in the formulation of medical diagnoses, on the routine inspection in industries, in pests control in agriculture and so on. Military applications involving infrared detectors (night vision) are commonly tactical situations, when they are employed in order to get an advantage over the enemy. The main motivation of the present work is the systematical evaluation of the performance of infrared detectors based on the multiple quantum wells heterostructure of InGaAs /InAlAs, varying the density of the doping element (silicon) into the well. The epitaxial growth of the heterostructures was performed in a MOVPE reactor. Afterwards, they were characterized in accordance with X-ray diffraction, Hall effect, photoluminescence and absorption techniques. Finally, they were processed, achieving a devices form. Based on the characterization of the final device, that took into consideration the key figures of merit of a photodetector (dark current, photocurrent, responsivity and detectivity), it was possible to obtain important conclusions about the quantum well doping effects on the QWIPs (Quantum Well Infrared Photodetectors) performance.

Esta dissertação discute o desenvolvimento de modelos analíticos e numéricos para as características elétricas de transistores de fios quânticos. Sendo assim, realizou-se um estudo implementando uma sequência de formalismos e ferramentas computacionais para solução auto-consistente das equações de Schrödinger e Poisson para poços e fios quânticos. Com a utilização deste método numérico pode-se determinar os auto-estados os níveis de energias e as densidades eletrônicas de portadores livres, dentre outros parâmetros relevantes para dispositivos de fio quântico. Adicionalmente, realizou-se um estudo analítico das heteroestruturas semicondutoras de interesse para a área de dispositivos de dimensionalidade reduzida. Este estudo levou a obtenção de resultados referentes ao desenvolvimento de modelos teóricos para as características elétricas de dispositivos baseados no mecanismo de tunelamento ressonante. Os resultados obtidos para a característica corrente-tensão (I-V) nas heteroestruturas investigadas foram contrastados satisfatoriamente com os encontrados na literatura. Este ferramental analítico foi então aplicado para computar o coeficiente de transmissão eletrônico de um diodo de fio quântico com tunelamento ressonante. / This dissertation discusses the development of analytical and numerical models for the electrical characteristics of quantum wire transistors. A study is carried out, implementing a sequence of formalisms and computational tools for the self-consistent solution of the equations of Schrödinger and Poisson in quantum wells and quantum wires. By using this numerical formulation it is possible to determine the eigenstates, energy levels and free-carrier electronic density, among other relevant parameters for quantum wire devices. In addition, we also conducted an analytical study concerning semiconductor heetrostrucures of interest for reduced dimensionality devices applications. This study led to results regarding the development of theoretical models for the electrical characteristics of devices based on the resonant tunneling mechanism. The results obtained for the current-voltage (I-V) characteristics in the investigated heterostructures were satisfactorily compared to those available at the published literature and this analytical tool was then used to compute the electronic transmission coefficient in a resonant tunneling quantum wire diode.

Esta tese trata da modelagem das características eletrônicas de dispositivos semicondutores baseados em contatos Schottky heterodimensionais, definidos como contatos entre um metal e um sistema de dimensionalidade reduzida. Especificamente, este trabalho concentra-se na situação em que o metal é posto em contato direto com um gás eletrônico bidimensional presente na interface de uma heterojunção empregando dopagem modulada. Dispositivos de interesse são diodos Schottky, bem como estruturas do tipo metal-semicondutor-metal (MSM). Para a característica capacitância-tensão, C-V, é desenvolvido um modelo quasi-bidimensional que apresenta excelente concordância com os resultados experimentais disponíveis. Do ponto de vista da característica corrente-tensão, I-V, é apresentado um modelo unificado, considerando tanto o mecanismo de tunelamento, quanto o de emissão termoiônica. Nossas previsões teóricas, suportadas por alguns indicativos experimentais, sugerem que, para aplicações em fotodetecção, o uso de contatos heterodimensionais, substituindo junções metal-semicondutor convencionais, pode reduzir a corrente de escuro em pelo menos uma ordem de magnitude. / This thesis deals with the modeling of the electronic characteristics of semiconductor devices based on heterodimensional Schottky contacts, defined as contacts between a metal and a reduced dimensionality system. Specifically, this work focus on the situation in which a metal is placed in direct contact with a two dimensional electron gas located at the interface of a modulation doped heterojunction. Devices of interest are Schottky diodes as well as metal-semiconductor-metal (MSM) structures. For the capacitance-voltage characteristics a quasi two-dimensional model is developed, which yields very good agreement with available experimental results. For the current-voltage characteristics a unified model is presented, considering the tunneling as well as the thermionic emission mechanisms. Our theoretical predictions, supported by a few experimental findings, suggest that, for photodetection applications, the use of heterodimensional contacts, replacing conventional metal-semiconductor junctions, can reduce the dark current by at least one order of magnitude.

L'innovation de la technologie de pointe et l'exigence du marché électronique se concentrent toujours sur l'électronique bon marché, qui présente une fabrication facile, avec des performances sans cesse améliorées. Les pérovskites hybrides organiques-inorganiques, qui combinent les propriétés des semi-conducteurs organiques et inorganiques, sont des candidats prometteurs pour de futurs dispositifs opto-électroniques. L’énergie de liaison des excitons et la force d'oscillateur sont très élevées dans ces systèmes, ce qui rend possible leurs applications à température ambiante. Dans cette thèse, nous avons étudié des couches minces auto-assemblées de molécules de pérovskite (R-NH3)2PbX4. En modifiant la structure R, des pérovskites avec des propriétés optimisées (propriétés optiques d’émission, rugosité de surface et photostabilité) ont été découvertes. Nous avons aussi développé des méthodes pour fabriquer des cristaux massifs et des nanoparticules de pérovskites, et nous avons créé de nouveaux cristaux de pérovskite mixtes: (RNH3)2PbYxX4-x et AB-(NH3)2PbX4. Des cavités verticales en régime de couplage fort ont été réalisées avec ces matériaux, l’émission du polariton de basse énergie a été observée à température ambiante. / The innovation of advanced technology and the requirement of electronic market are always focusing on low cost electronics, presenting an easy processing and having enhanced performance. Organic-inorganic hybrid perovskites, which combine the properties of organic and inorganic semiconductors, are hopeful candidates for future opto-electronic devices. The exciton binding energies and oscillator strengths are very large in these systems making the applications at room temperature possible. In this thesis, we study the flexibility and photostability of self-assembled two-dimensional layered perovskites (R-NH3)2PbX4. By modifying the R structure, perovskites with optimized photoluminescence efficiency, surface roughness and photostability are discovered. We develop also some methodologies to fabricate crystal bulks and nanoparticles of perovskites, and we create new mixed perovskite crystals: (RNH3)2PbYxX4-x and AB-(NH3)2PbX4. Vertical microcavities containing these new materials and working in the strong coupling regime at room temperature have been realized, the emission of the lower energy polariton is observed.

Orientador: Américo Sheitiro Tabata / Banca: Euzi Conceição Fernandes da Silva / Banca: Ligia de Oliveira Ruggiero / Banca: Sandro Martini / Banca: José Humberto Dias da Silva / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: Neste trabalho investigamos pontos quânticos de InAs sobre um substrato de GaAs crescidos pela técnica de epitaxia por feixe molecular (MBE, Molecular Beam Epitaxy). Esses pontos quânticos emitem radiação no intervalo de 1,3 üm a 1,5 üm (0,95 eV a 0,83 eV), que corresponde à janela óptica onde ocorre a mínima atenuação do sinal em redes de transmissão por fibras ópticas. Realizamos dois tipos de estudo em dois conjuntos de amostras. No primeiro caso analisamos a influência de alguns parâmetros de crescimento nas propriedades ópticas desses pontos quânticos. No segundo caso, analisamos a influência de um tratamento térmico nas propriedades ópyicas. Resultados de fotoluminescência (PL - photoluminescence) para o primeiro estudo mostraram uma grande influência da velocidade de crescimento nos espectros de emissão que apresentaram múltiplos picos, muito provavelmente associados com o estado fundamental e seus respectivos estados excitados dos pontos quânticos. Para o segundo estudo os resultados de PL mostraram que a emissão óptica consistia de uma larga banda situada entre 1,3 a 1,5 üm. Entretanto, observou-se que, após tratamento térmico durante 3 horas a uma temperatura de 550 ºC, a intensidade da PL aumentou por um fator 3. Além disso, a larga banda observada tornou-se um conjunto de pelo menos 5 picos discretos. O efeito de tratamentos térmicos em poços quânticos é bem conhecido e foi bem explorado na literatura. Em pontos quânticos, os mesmos efeitos também existem, porém, outros de igual importância tembém se apresentam. Dentre os mais importantes podemos citar a redistribuição dos tamanhos dos pontos quânticos, que podem em alguns casos limites fazer com que o ponto quântico desapareça, e a redistribuição das tensões entre a interface ponto quântico/matriz. Neste trabalho... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: This study investigated InAs large quantum dot on GaAs substrate grown by the techique of molecular beam epitaxy (MBE). These quantum dots emit in the spectral range of 1.3 üm and 1.5 üm (0.95 eV to 0.83 eV), which corresponds to the window of minimal signal attenuation on transmission networks by optical fiber. We have performed two kinds of study into two different sets of samples. In the first case, we have analyzed the influence of some growth parameters on the optical properties of these quantum dots. In the second one, we have analyzed the influence of a thermal treatment on the optical properties. Results of photoluminescence (PL) on the first study showed a great influence of growth velocity in the PL spectra line shape. For the second study the results of PL on an as grown sample showed that the emission signal was a large optical band in the wave length range of 1.3 üm and 1.5 üm. However, it was observed that after the thermal treatment of 3 hours at a temperature of 550 ºC, the intensity of these PL emissions increased by a factor 3. Moreover, the observed large band has become a series of at least 5 discrete peaks. The effect of heat treatments in quantum wells is well known and has been well explored in literature. In quantum dot, the same effects are expected; however, other equally important effects are also present. The most important is the size redistribution of the quantum dots, which can in some limit cases, vanish these quantum dot. Our study identified the origin of these multiple peaks, and found emissions of PL at room temperature in the optical window between 1.3 and 1.5 üm. / Doutor

Bragg spaced quantum wells represent a unique class of resonant photonic materials, wherein a photonic bandgap is created by the periodic spacing of quantum wells and the associated variation in the complex susceptibility (index and absorption) of the material. Interest in BSQWs has grown in the past decade due to their large ultrafast nonlinearities and the corresponding large ultrafast reflectivity changes and transmissivity. These nonlinearities are of particular interest in areas of communication technology, where ultrafast all-optical logic components have become increasingly in demand. This research will further investigate BSQWs and the for the first time effects of spin-dependent nonlinear excitation on their photonic band structures. It will also investigate how these effects can be used in all-optical polarization switching and tunable optical buffer (slow light) applications.

Innovation in photovoltaic technology may offer cost competitive options to other energy sources and become a viable solution for the energy and environmental challenges of the 21st century. One proposed innovative technology is based on all-silicon tandem cells, which are constructed using superlattices consisting of environmental friendly Si and its compounds. The well and barrier materials in superlattices are restricted to silicon and silicon oxide during the present study. Single crystalline Si/SiO2 quantum wells (QWs) have been fabricated by thermal oxidation of silicon-on-insulator (SOI) wafers. It is found that oxide properties in QWs are important for SOI wafers prepared by the SIMOX (Separation by Implantation of Oxygen) technique. However, QWs fabricated from SOI wafers prepared by the ELTRAN (Epitaxial Layer TRANsfer) approach show the effect of quantum confinement without evidence of strong oxide interfacial transitions. In these wafers, evidence for an apparently ordered silicon oxide was found with 1.92?atomic fringe spacing along the (110) direction of the Si structure and with the thickness about 17?along the (100) direction of the Si structure. Luminescence wavelength ranges are from 700nm to 918nm depending on the Si thickness. The luminescence measurements on other positions of the sample show peak and shoulder spectra, which are explained by monolayer fluctuations in QW thicknesses, previously observed in III-V QWs and II-VI QWs. Si/SiO2 superlattices are fabricated by RF magnetron sputtering. Si density is the key issue in crystallizing the superlattice. High-density Si layers crystallize either under high temperature furnace annealing or rapid thermal process annealing. However, low density Si would not crystallize even at high temperature. Crystallized nanocrystals in the Si layers are observed by high resolution transmission electron microscopy (HRTEM) when the Si layer is thicker than 3nm. When Si layers are thinner than 3nm, the Si layers are discontinuous and finally deteriorate into small nanocrystals. The suitability of such superlattices for surface passivation and antireflection coatings is reviewed. Initial attempts to fabricate heterojunctions between Si wafers and Si/SiO2 superlattices resulted in open circuit voltage of 252mV. However, it is expected that better results would be obtained if Si/SiO2 superlattices were fully crystallized.

The present thesis is a study of the evolution of defect states in devices based on wide bandgap semiconductors. The attention has been focused on light-emitting diodes based on GaN and Schottky diodes based on SiC, these latter a basic structure for the fabrication of high-power rectifiers and ionising particle detectors. In both cases, we studied the defects and their electronic properties by means of the following experimental techniques: current-voltage (I-V) measurements, in order to investigate the effect of imperfections on the transport properties of the material/device; capacitance-voltage (C-V) measurements, yielding the profile of concentration of charge carriers, and giving information on the influence of defects on this concentration; deep level transient spectroscopy (DLTS), a technique allowing for the identification and characterization of defect-originated electron levels in the gap. I also employed techniques, such as photocurrent spectroscopy (PC), allowing for the characterization of light absorption by the material and/or device versus varying photon energy. In both cases of SiC and GaN, the defect characterization was always interpreted in the framework of its influence on device operation. In the analysed LEDs the defect evolution was connected to the evolution of quantum efficiency, and in the SiC diodes we studied the effects of defect introduction on the charge collection efficiency (CCE) and on the leakage current of the device. Furthermore, for the interpretation of photocurrent spectra, I developed a model describing the generation of photocurrent considering the dispersion relations for the absorption coefficient and refractive index in the various device layers, as well as the internal reflection, transmission and interference phenomena involving the optical field within the device. The research yielded various interesting results: I detected many deep levels introduced by proton- and electron-irradiation in SiC. From the study of their annealing behaviour I concluded that one of these levels is related to a particular lattice defect, the carbon interstitial. By means of the analysis of the introduction rates of the levels and comparisons between proton and electron irradiation, I was able to distinguish between deep levels related to simple intrinsic defects and to defect complexes. In the case of the GaN LED, I found that the evolution of several independent properties are strongly correlated, meaning that a single degradation mechanism is responsible for the observed changes. In particular, I concluded that the degradation of the light emission intensity is due to the generation of defects in the active region of the device.