[pt] Detectores de infravermelho possuem larga gama de aplicações em diversos setores, desde militares (visão noturna, mísseis) até civis (aparelhos eletrônicos). Nesta dissertação estivemos interessados nas absorções intrabanda de heteroestruturas multiepitaxiais com intuito de absorver infravermelho em 4,1 micra onde se localiza a primeira janela de transmissão atmosférica. Baseamos nossas heteroestruturas de poços quânticos em semicondutores da família III-V. Discorremos quanto a produção do dispositivo de forma detalhada, juntamente com todos os processos de calibração de cada etapa. O crescimento se dá pela técnica de MOVPE que possui alta precisão em termos da espessura e composição da camada depositada. Em seguida discutimos sobre o processamento da amostra crescida para expor os contatos elétricos. E finalizamos descrevendo o processo de integração do dispositivo sobre um suporte para leitura do sinal. Finalizada a etapa de produção, fizemos um estudo quanto às características da amostra tanto qualitativamente quanto quantitativamente. Este estudo objetivou a obtenção de duas informações: comparação direta entre as geometrias de acoplamento luminoso; e medição da eficiência dos detectores produzidos. Ao fim do trabalho obtivemos um fotodetector produzido desde seu crescimento até sua montagem final. Assim como os resultados da eficiência dos mesmos que já indicaram melhorias possíveis para trabalhos futuros. Visando a formação de um mercado de produção em larga escala de fotodetectores, este trabalho identificou áreas com carência de técnicas disponíveis e que necessitam de investimento. / [en] Infrared detectors have a wide range of applications in various industries, from military (night vision, missile) to civil (electronics). In this dissertation we were interested in the intraband absorption of multiepitaxial heterostructures with aim at absorption of 4.1 microns infrared where there s located the first atmospheric transmission window. We based our quantum well heterostructures in semiconductor from the III-V family. We discourse about the production of the device in detail, along with all the calibration procedures for each step. The growth is done by MOVPE technique that has high accuracy in terms of thickness and composition of the deposited layer. We then discuss about the processing of the grown sample to expose the electrical contacts. And finally we describe the process of integration of the device over a base for reading the signal. Completed the production stage, we studied the characteristics of the sample both qualitatively and quantitatively. This study aimed to obtain two pieces of information: a direct comparison between the methods for light coupling, and measuring the efficiency of the detectors produced. At the end of the work we obtained a photodetector produced from its growth till its final assembly. Also we obtained the results of the efficiency of the sample that already indicated possible improvements for future works. If the aim is at the formation of a large-scale production of photodetectors, this study identified areas with a shortage of available techniques and in need of investment.

abstract: Multiple quantum well (MQW) structures have been employed in a variety of solid state devices. The InGaAs/GaAs material system is of special interest for many optoelectronic applications. This study examines epitaxial growth and defect creation in InGaAs/GaAs MQWs at its initial stage. Correlations between physical properties, crystal perfection of epitaxial structures, and growth conditions under which desired properties are achieved appear as highly important for the realization and final performance of semiconductor based devices. Molecular beam epitaxy was utilized to grow InGaAs/GaAs MQW structures with a variation in deposition temperature T_dep among the samples to change crystalline and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature T_dep=505°C was found for 20% In composition. The density of 60° primary and secondary dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection, as evaluated by lateral and vertical coherence lengths and diffuse scattering in reciprocal space maps. Likewise, the strength of non-radiative Shockley-Read-Hall recombination increased as deposition temperature was reduced. Elevated deposition temperature led to InGaAs decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering. High available thermal energy increased atomic surface diffusivity and resulted in growth surface instability against perturbations, manifesting in lateral layer thickness undulations. Carriers in structures grown at elevated temperature experience localization in local energy minima.InGaAs/GaAs MQW structures reveal correlation between their crystal quality and optical properties. It can be suggested that there is an optimal growth temperature range for each In composition with high crystal perfection and best physical response. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2014

Orientador: Daniel Mario Ugarte / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-10T20:45:53Z (GMT). No. of bitstreams: 1 Tizei_LuizHenriqueGalvao_M.pdf: 14343917 bytes, checksum: 2e436bc0147e26276c682a3c9af78ce9 (MD5) Previous issue date: 2008 / Resumo: A completa caracterização de novos fenômenos físicos e químicos em sistemas com dimensões nanométricas requer conhecimento detalhado: a) do arranjo atômico; b) de como os diferentes elementos químicos dos materiais se redistribuem nas interfaces/superfícies (rugosidade, interdifusão, etc.); e finalmente c) como os dois primeiros fatores modificam as propriedades eletrônicas do sistema. Neste contexto, o desenvolvimento de novas ferramentas com capacidades específicas e bem adaptadas à análise de nanossistemas é imprescindível; assim técnicas de caracterização e visualização com resolução espacial nanométrica devem ser consideradas uma simples necessidade rotineira. No trabalho de mestrado que apresentamos buscamos implementar técnicas que permitam caracterizar sistemas com resolução espacial atômica. Neste sentido, implementamos um método de análise quantitativa de imagens de microscopia eletrônica de transmissão de alta resolução, que permite uma medida objetiva de variações da composição química. Esta medida é feita com base nas variações da distribuição de intensidades em uma imagem e fornece um mapa da composição química na imagem. Este procedimento de interpretação quantitativa foi aplicado ao estudo da morfologia de interfaces de poços quânticos de InGaP/GaAs crescidos por CBE (Chemical Beam Epitaxy). Estimamos que o limite de detecção de variações de composição química para este sistema seja 15%. Nesta análise, medimos parâmetros estruturais microscópicos que permitem a comparação da morfologia de diferentes poços. Com isso, concluímos que a interface InGaP/GaAs é mais rugosa que a GaAs/InGaP. Além disso, através da caracterização de poços quânticos com diferentes camadas interfaciais, concluímos que a adição de GaP na interface InGaP/GaAs reduz a rugosidade. Os resultados de rugosidade foram comparados com medidas de fotoluminescência a 6K buscando estabelecer uma correlação direta entre a qualidade da interface e a largura de linha de emissão do poço quântico. Esta correlação não foi estabelecida. Mostramos que modelos estruturais simples são ineficazes e que modelos mais elaborados são necessários para interpretação da largura de linha de emissão de um poço quântico / Abstract: The complete characterization of new physical and chemical phenomena in systems of nanometric scale requires the detailed knowledge of: a) atomic structure; b) how chemical composition distribution is redefined by interfaces and surfaces (rougheness, interdiffusion, etc.); and c) how are the electronic properties of the system influenced by those two factors. In this sense, the development of new tools with specific capabilities and well adapted to the analysis of nanosystems is essential. Therefore, characterization and imaging techniques with nanometric spatial resolution must be considered routine necessities. In this graduate work we present, we sought to implement techniques which allow the characterization of small systems with atomic spatial resolution. In this sense, we implemented a method for the qualitative analysis of high resolutions transmission electron microscopy images, which makes possible the objective measurement of chemical composition changes. This measurement is based on changes of the distribution of intensities of an image and results in a map of the chemical composition of the image. This procedure for the quantitative interpretation was used in the study of the morphology of the interfaces of InGaP/GaAs quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). We estimate that our detection limit for chemical variations in this system is 15 %. In this analysis, we measured microscopic structural parameters which allow the comparison of the morphology of different QW. With this data, we concluded that the InGaP/GaAs interface is rougher that the GaAs/InGaP one. Moreover, through the characterization of QWs with different interfacial layers we concluded that the addition of a thin GaP layer reduces roughness. Morphologial results were compared with 6 K photoluminescence experiments, seeking to establish a direct correlation between interface quality and quantum well emission line width. This correlation was not established. We showed that simple structural models are inefficient and that more elaborated models are need for the quantitative interpretation of quantum wells¿ emission line width / Mestrado / Física da Matéria Condensada / Mestre em Física

A dinêmica caótica, em arranjos de bilhares eletrônicos bidimensionais e tridimensionais , em heteroestruturas semicondutoras de AlxGa1-xAs/GaAs foi estudada tanto de forma experimental como através de simulações numéricas. Como primeira parte, a dinâmica eletrônica caótica em super-redes de antipontos bidimensionais foi tratada sob a influência de campo magnético uniforme aplicado de forma pararela ao plano do gás de elétrons. Nestas circunstâncias, a anisotropia do contorno de Fermi do gás bidimensional de elétrons produzida pelo campo magnético pararelo, distorce fortemente a forma das trajetórias eletrônicas induzindo mudanças drásticas nas oscilações de comensurabilidade da magnetoresistência na região de campo fraco, em temperaturas criogênicas. Como segunda parte, arranjos de bilhares eletrônicos tridimensionais foram realizadas, pela primeira vez, através da gravação de super-redes retangulares de buracos mecânicos cilíndricos em poços quânticos parabólicos, os quais contêm o gás tridimensional de elétrons de alta mobilidade. Medidas de resistividade nestes sistemas revelam a presença de picos anomalos na região de campo fraco, em forma similar às medições em sistemas de antipontos bidimensionais. Foi calculada a dinâmica eletrônica do bilhar tridimensional analisando -se a evolução das trajetórias no espaço de fases através das seções espaciais de Poincaré. Calculou-se também a magnetoresistência pxx do gás tridimensional através da teoria de resposta linear, encontrando-se que a presença de ressonância não lineares é refletida nos picos anômalos observados. A realização destes sistemas permitiu o estudo de fenômenos físicos novos como as oscilações de comensurabilidade em sistemas tridimensionais e os efeitos de tamanho galvano-magnéticos devido às ressonâncias geométricas. / The chaotic electron dynamics in two-dimensional and three-dimensional arrays of elec­ tron billiards in ALx Ga1-xAs/GaAs semiconductor heterostructures has been studied in experimental way and also through numerical simulations. As a first part, the chaotic electron dynamics in two-dimensional antidot super-lattices has been studied under the influence of a uniform magnetic field applied in parallel configuration related to the plane of the electron gas. In this case, the Fermi contour anisotropy of the two-dimensional elec­ tron gas induced by the parallel field highly distorts the shape of the electron trajectories inducing pronounced changes in the commensurability peaks of the low field magnetoresis­ tance, in cryogenic temperatures. In the second part, arrays of three dimensional electron billiards were obtained, by first time, through the patterning of rectangular super-lattices of cylindrical voids in ALx Ga1-xAs/GaAs parabolic quantum wells containing a high mo­ bility three-dimensional electron gas. Resistivity measurements in these systems reveal anomalous peaks in the low magnetic field region in similar way as measurements in two-dimensional antidots systems. The electron dynamics of the three-dimensional bil­ liard was calculated, analyzing the evolution of trajectories in phase space by means of Poincaré space of sections. The magnetoresistance xx of the three-dimensional electron gas was calculated through linear responde theory, being found that nonlinear resonances are reflected in the observed anomalous peaks. The accomplishment os these systems allowed the study of new physical phenomena such as the commensurability oscillations in three-dimensional systems and size-effects due to geometrical resonances.

Orientador: Eliermes Arraes Meneses / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-26T09:54:15Z (GMT). No. of bitstreams: 1 Gazoto_AndreLuis_M.pdf: 15242675 bytes, checksum: ac4c94e41838cf002e9c0e1f968e4b63 (MD5) Previous issue date: 2004 / Resumo: Neste trabalho realizamos um estudo sobre a influência da espessura nominal do poço quântico de InP nas propriedades ótica e estrutural de pontos quânticos de InP crescidos sobre InGaP. Foram utilizadas técnicas de espectroscopia ótica como fotoluminescência (PL), microfotoluminescência (?-PL) e fotoluminescência de excitação (PLE), assim como técnicas de caracterização estrutural Reflection High Energy Electron Diffraction (RHEED) e Atomic Force Microscopy (AFM). As questões envolvidas na evolução de um crescimento bidimensional para um tridimensional são investigadas em amostras crescidas pela técnica de Chemical Beam Epitaxy (CBE), utilizando-se o método Stranski-Krastanov de crescimento. Os resultados dessa investigação mostraram que as propriedades ótica e estrutural são fortemente correlacionadas e dependentes da espessura nominal do poço quântico de InP. Por AFM foi possível observar a formação de pontos quânticos a partir da rugosidade superficial do InP. Com o incremento na espessura nominal do poço quântico de InP o sistema evolui para uma configuração bimodal de ilhas pseudomórficas e com forma de tronco de pirâmide, formando assim duas famílias. A transição entre estas famílias se dá com o facetamento das ilhas pseudomórficas a partir de um volume crítico VC de cada ilha. O ponto em que essa transição ocorre pode ser determinado com o aparecimento de estruturas tipo chevron no padrão de difração do RHEED. Ficou claro que a transição de um crescimento bi para tridimensional não é abrupta, mas sim contínua. Foi encontrado também, um comportamento autolimitante para o raio desses pontos quânticos. A rica evolução do crescimento epitaxial de pontos quânticos de InP, observada pelas técnicas estruturais, pôde ser acompanhada também pelas técnicas óticas. A correlação dos dados estrutural e ótico confirmou uma evolução contínua de um crescimento 2D para um 3D com a coexistência destes dois modos de crescimento durante um certo intervalo de espessura do poço quântico de InP. Mostramos assim, que uma transição de fase de primeira ordem, comumente utilizada para descrever a transição entre os crescimentos bi e tridimensional, não descreve corretamente o crescimento epitaxial de pontos quânticos de InP/InGaP pelo método Stranski-Krastanov / Abstract: In this work we study the influence of the thickness of InP quantum well on the optical and structural properties of the InP quantum dots that were grown on the InGaP barrier. For this study we have used optical spectroscopy techniques such as Photoluminescence (PL), Micro-Photoluminescence (?-PL), Excitation Photoluminescence (PLE); as well as structural characterization techniques such as Reflection High Energy Electron Diffraction (RHEED) and Atomic Force Microscopy (AFM). The evolution of the bi-dimensional to tri-dimensional growth was investigated in the InP/InGaP samples grown by Stranski-Krastanov method in a Chemical Beam Epitaxy Reactor (CBE). The results show that the optical and structural properties are strongly correlated and depend of the InP thickness. Through the AFM technique was possible to observe the formation of quantum dots from the surface rougeness of the InP layer. By increasing the nominal thickness of the InP quantum well, the system evolves to a bimodal configuration, one of pseudomorfic islands, and other, of truncated pyramidal shapes, thus creating two structure families. The transition between these two families occurs with the facing of these pseudomorfic islands after a Vc critical volume is reached. The point where the transition occurs can be determined by the appearance of structures chevron like in the RHEED diffraction pattern. It became clear that the transition from the bi-dimensional to tri-dimensional growth is not abrupt, but continuous. The rich evolution of the epitaxial growth of the InP quantum dots, observed through the structural techniques, was also able to be followed through the optical techniques. The correlation between the structural and optical data confirmed a continuous evolution of the growth process of the quantum dots, with the coexistence of the two modes of growth, during a certain thickness interval of the InP. We thus demonstrate that a first order phase transition, used commonly to describe the transition between the bi and tri-dimensional growths, does not describe correctly the growth of the InP/InGaP quantum dots by Stranki-Krastanov method / Mestrado / Física / Mestre em Física

L'objectif de cette thèse, réalisée dans le cadre du contrat européen Senshy, était la réalisation de diodes laser émettant dans le moyen infrarouge (de 3,0 à 3,4 µm). Ces diodes sont destinées à intégrer des détecteurs et des systèmes d'analyse de gaz basés sur le principe de la spectroscopie d'absorption (TDLAS) pour la détection des alcanes (méthane, éthane, propane) et des alcènes (acétylène). Les structures à puits quantiques de type I ont été réalisées par épitaxie par jets moléculaires sur GaSb.Bien qu'ayant d'excellentes performances dans la gamme 2,0-3,0 µm, les lasers GaInAsSb/AlGaAsSb montrent rapidement leurs limites en franchissant la frontière des 3 µm (la longueur d'onde la plus haute atteinte avec un tel composant est de 3,04 µm en continu à 20°C). Cette situation était d'autant plus regrettable que plusieurs gaz ont leurs raies d'absorption au-delà de 3 µm : le méthane par exemple a un pic d'absorption à 3,26 µm 40 fois plus fort que celui à 2,31 µm. En remplaçant le quaternaire AlGaAsSb par le quinaire AlGaInAsSb, nous avons montré que l'on pouvait améliorer l'efficacité quantique interne et avons obtenu des densités de courant de seuil à 2,6, 3,0 et 3,3 µm qui pouvaient être comparées favorablement aux précédents records à ces longueurs d'onde (respectivement, 142 A/cm², 255 A/cm² et 827 A/cm²).Les diodes laser DFB fabriquées à partir des structures epitaxiées ont permis d'atteindre l'émission laser à température ambiante en continu à 3,06 µm avec un caratère mono-fréquence (SMSR supérieur à 30 dB) et un courant de seuil de 54 mA. À 3,3 µm, les diodes DFB fonctionnent en continu jusqu'à 18°C avec un SMSR > 30dB et un courant de seuil de 140 mA. Finalement, ces diodes ont été intégrées dans un système d'analyse de gaz et ont permis d'atteindre une limite de concentration du méthane de 100 ppbv soit 17 fois moins que la concentration du méthane dans l'air ambiant. / The objective of this thesis, conducted as part of the European contract Senshy, was the realization of laser diodes emitting in the mid-infrared range (from 3.0 to 3.4 µm). These devices are to be integrated into detectors and gas analysis systems based on the principle of absorption spectroscopy (TDLAS). for the detection of alkanes (methane, ethane, propane) and of alkenes (acetylene). The quantum well type-I structures were made by molecular epitaxy on GaSb. Despite having excellent performance in the 2 to 3 µm range, GaInAsSb/AlGaAsSb quantum well lasers rapidly show their limits when crossing the 3 µm barrier (the highest wavelength reached with such a device was 3.04 µm under cw operation at 20°C). This situation was all the more regrettable because several gases have their strongest absorption lines in the 3 to 4 µm range: methane, for example, has a peak of absorption at 3.26 µm overhanging a weaker peak at 2.31 µm by a factor 40. By replacing the quaternary AlGaAsSb by the quinary AlGaInAsSb, we have shown that the internal efficiency could be improved and we have obtained threshold current densities at 2.6 , 3.0 and 3,3 µm that could be favourably compared to the previous records at these wavelengths (respectively, 142 A/cm², 255 A/cm² and 827 A/cm²).DFB laser diodes made from the epitaxial structures were operated at room temperature in the continuous wave regime at 3.06 µm with a single-frequency emission (SMSR greater than 30dB) and a threshold current of 54 mA. At 3.3 µm, DFB devices were operated in cw up to 18 ° C with a SMSR > 30 dB and a current threshold of 140 mA. Eventually, these devices were integrated into a gas analysis system and allowed to reach a concentration limit of 100 ppbv of methane, i.e. 17 times less than the concentration of methane in the air.

A dinêmica caótica, em arranjos de bilhares eletrônicos bidimensionais e tridimensionais , em heteroestruturas semicondutoras de AlxGa1-xAs/GaAs foi estudada tanto de forma experimental como através de simulações numéricas. Como primeira parte, a dinâmica eletrônica caótica em super-redes de antipontos bidimensionais foi tratada sob a influência de campo magnético uniforme aplicado de forma pararela ao plano do gás de elétrons. Nestas circunstâncias, a anisotropia do contorno de Fermi do gás bidimensional de elétrons produzida pelo campo magnético pararelo, distorce fortemente a forma das trajetórias eletrônicas induzindo mudanças drásticas nas oscilações de comensurabilidade da magnetoresistência na região de campo fraco, em temperaturas criogênicas. Como segunda parte, arranjos de bilhares eletrônicos tridimensionais foram realizadas, pela primeira vez, através da gravação de super-redes retangulares de buracos mecânicos cilíndricos em poços quânticos parabólicos, os quais contêm o gás tridimensional de elétrons de alta mobilidade. Medidas de resistividade nestes sistemas revelam a presença de picos anomalos na região de campo fraco, em forma similar às medições em sistemas de antipontos bidimensionais. Foi calculada a dinâmica eletrônica do bilhar tridimensional analisando -se a evolução das trajetórias no espaço de fases através das seções espaciais de Poincaré. Calculou-se também a magnetoresistência pxx do gás tridimensional através da teoria de resposta linear, encontrando-se que a presença de ressonância não lineares é refletida nos picos anômalos observados. A realização destes sistemas permitiu o estudo de fenômenos físicos novos como as oscilações de comensurabilidade em sistemas tridimensionais e os efeitos de tamanho galvano-magnéticos devido às ressonâncias geométricas. / The chaotic electron dynamics in two-dimensional and three-dimensional arrays of elec­ tron billiards in ALx Ga1-xAs/GaAs semiconductor heterostructures has been studied in experimental way and also through numerical simulations. As a first part, the chaotic electron dynamics in two-dimensional antidot super-lattices has been studied under the influence of a uniform magnetic field applied in parallel configuration related to the plane of the electron gas. In this case, the Fermi contour anisotropy of the two-dimensional elec­ tron gas induced by the parallel field highly distorts the shape of the electron trajectories inducing pronounced changes in the commensurability peaks of the low field magnetoresis­ tance, in cryogenic temperatures. In the second part, arrays of three dimensional electron billiards were obtained, by first time, through the patterning of rectangular super-lattices of cylindrical voids in ALx Ga1-xAs/GaAs parabolic quantum wells containing a high mo­ bility three-dimensional electron gas. Resistivity measurements in these systems reveal anomalous peaks in the low magnetic field region in similar way as measurements in two-dimensional antidots systems. The electron dynamics of the three-dimensional bil­ liard was calculated, analyzing the evolution of trajectories in phase space by means of Poincaré space of sections. The magnetoresistance xx of the three-dimensional electron gas was calculated through linear responde theory, being found that nonlinear resonances are reflected in the observed anomalous peaks. The accomplishment os these systems allowed the study of new physical phenomena such as the commensurability oscillations in three-dimensional systems and size-effects due to geometrical resonances.

Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process has been investigated. The zinc diffusion process is implemented using a semi-sealed open-tube diffusion technique. The process has proven to be highly controllable and reproducible by carefully monitoring of the diffusion parameters. Using this technique, isolated p-n junctions exhibiting good I-V characteristics and breakdown voltages greater than 10 V can be selectively defined across a semiconductor wafer. A series of Mach-Zehnder interferometric (MZI) switches/modulators have been designed and fabricated. Monolithic integration of 1x2 and 2x2 MZI switches has been demonstrated. The diffusion process circumvents the need for isolation trenches, and hence optical losses can be significantly reduced. An efficient optical beam steering device based on InGaAsP multiple quantum wells is also demonstrated. The degree of lateral current spreading is easily regulated by controlling the zinc depth, allowing optimization of the injected currents. Beam steering over a 21 microns lateral distance with electrical current values as low as 12.5 mA are demonstrated. Using this principle, a reconfigurable 1x3 switch has been implemented with crosstalk levels better than -17 dB over a 50 nm wavelength range. At these low electrical current levels, uncooled and d.c. bias operation is made feasible. The use of multimode interference (MMI) structures as active devices have also been investigated. These devices operate by selective refractive index perturbation on very specific areas within the MMI structure, and this is again realized using zinc diffusion. Several variants such as a compact MMI modulator that is as short as 350 µm, a robust 2x2 photonic switch and a tunable MMI coupler have been demonstrated.

[pt] Nesta tese, apresento uma investigação teórica e experimental das propriedades eletro-ópticas de um fotodetector baseado em uma superrede assimétrica InGaAs/InAlAs com um defeito estrutural. Essa heteroestrutura apresenta duas importantes características: estados parcialmente localizados no contínuo, chamados de estados eletrônicos vazantes, e um aumento virtual do band offset na banda de condução. Devido à assimetria da superrede, a função de onda do estado eletrônico vazante é localizada numa direção e estendida na outra. Em consequência dessas características, o fotodetector apresenta modo dual de operação, fotocondutivo e fotovoltaico, e temperatura de operação ambiente. O modo fotovoltaico foi alcançado devido à direção preferencial de escape do fluxo de elétrons excitados para os estados eletrônicos vazantes no contínuo. A temperatura de operação elevada ocorre devido à diminuição da corrente de escuro térmica causada pelo aumento virtual do band offset. No modo fotovoltaico, o espectro de fotocorrente apresenta dois picos estreitos de energias em 300 meV e em torno 440 meV, sendo eles relacionados às transições ópticas do estado fundamental para o primeiro e o segundo estado vazante no contínuo, respectivamente. Para o modo fotocondutivo, a largura de linha do espectro de fotocorrente é fortemente dependente da direção do bias de voltagem aplicado. Para o bias positivo, o espectro de fotocorrente apresenta um pico em 300 meV e um ombro de energia em torno de 260 meV. Para o bias negativo, o espectro de fotocorrente mostra uma banda larga com dois picos em 300 meV e 260 meV. Esse comportamento está relacionado com a população dos estados na minibanda em função da direção do bias aplicado. As figuras de mérito do fotodetector, em ambos os modos de operação, apresentam resultados similares aos melhores fotodetectores encontrados na literatura. / [en] In this thesis, I present a theoretical and experimental investigation of the electro-optical properties of a photodetector based on an InGaAs/InAlAs asymmetric superlattice with a structural defect. This heterostructure has two important characteristics: partially localized states in the continuum, called by leaky electronic states, and a virtual increase in conduction band offset. Due to the asymmetry of the superlattice, the wavefunction of the leaky electronic state is located in one direction and extended in another one. As a result of these features, the photodetector presents a dual-mode operation, photoconductive and photovoltaic modes, and room temperature operating. The photovoltaic mode has reached due to the preferential direction for the flow of excited electrons in the leaky electronic state in the continuum. The high operating temperature occurs because of the decrease in thermal dark current due to the virtual increase of band offset. In photovoltaic mode, the photocurrent spectrum has two narrow energy peaks at 300 meV and around 440 meV, which are related to optical transitions from the ground state to the first and the second leaky electronic states, respectively. For photoconductive mode, the line width of the photocurrent spectrum is strongly dependent on the direction of the applied voltage bias. For the positive bias, the photocurrent spectrum has a peak at 300 meV and a power shoulder around 260 meV. For the negative bias, the photocurrent spectrum shows broadband with two peaks at 300 meV and 260 meV. This behavior is related to the population of the mini band states as a function of the applied bias direction. The figure of merits of the photodetector, in both operation modes, present results similar to the best photodetectors found in the literature.

Im Mittelpunkt dieser Arbeit stehen der Transport und die Manipulation optisch angeregter Elektronen-Spins in (110) Quantenfilmen (quantum wells, QWs) mittels akustischer Oberflächenwellen (surface acoustic waves, SAWs). Der starke räumliche Einschluss der Ladungsträger im akustisch erzeugten Potenzial erlaubt spinerhaltenden Ladungsträgertransport mit der akustischen Geschwindigkeit. Auf diese Weise wird langreichweitiger Spintransport über Distanzen > 60 microns demonstriert, welche Spinlebenszeiten von mehr als 20 ns entsprechen. Erreicht werden diese extrem langen Spinlebenszeiten durch drei Effekte: (i) Der D''yakonov-Perel''-Mechanismus ist für Spins in Wachstumsrichtung von (110)-QWs in III-V-Halbleitern unterdrückt. (ii) Aufgrund des Typ-II piezoelektrischen Potenzials der akustischen Oberflächenwelle ist der Bir-Aronov-Pikus Spinrelaxations-Mechanismus sehr schwach. (iii) Der starke Einschluss der Ladungsträger in mesoskopische Bereiche stabilisiert den Spin zusätzlich. In der vorliegenden Arbeit wird erstmals eine Anisotropie des Spintransports in einem externen Magnetfeld (Bext) nachgewiesen. Hierzu wurde die elektronische Spindynamik während des akustischen Transports entlang der [001]- bzw. [1-10]-Richtung untersucht. Während des Transports entlang der [001]-Richtung führt die Präzession der Elektronenspins um das fluktuierende interne Magnetfeld (Bint), das vom Fehlen eines Inversionszentrums im GaAs-Kristallgitter herrührt, zu Spinkohärenzzeiten von etwa 2 ns. Im Gegensatz hierzu ist beim Transport entlang der [1-10]-Richtung die Spinrelaxation für Spins in Wachstumsrichtung um eine Größenordnung langsamer. Grund hierfür ist die endliche mittlere Größe des internen effektiven Magnetfeldes Bint für Transport entlang dieser Richtung. Die beobachtete Anisotropie in der Spindynamik für die beiden Transportrichtungen wird vollständig im Rahmen der Spin-Bahn-Kopplung und des D''yakonov-Perel''-Mechanismus beschrieben und quantitativ erklärt. / In this work, we employ surface acoustic waves (SAWs) to transport and manipulate optically generated spin ensembles in (110) GaAs quantum wells (QWs). The strong carrier confinement into the SAW piezoelectric potential allows for the transport of spin-polarized carrier packets along well-defined channels with the propagation velocity of the acoustic wave. In this way, spin transport over distances exceeding 60 microns is achieved, corresponding to spin lifetimes longer than 20 ns. The demonstration of such extremely long spin lifetimes is enabled by three main factors: (i) Suppression of the D''yakonov-Perel'' spin relaxation mechanism for z-oriented spins in (110) III-V QWs; (ii) Suppression of the Bir-Aronov-Pikus spin relaxation mechanism caused by the type-II SAW piezoelectric potential; (iii) Suppression of spin relaxation induced by the mesoscopic carrier confinement into narrow stripes along the SAW wave front direction. A spin transport anisotropy under external magnetic fields (Bext) is demonstrated for the first time. Employing the well-defined average carrier momentum impinged by the SAW, we analyze the spin dephasing dynamics during transport along the [001] and [1-10] in-plane directions. For transport along [001], fluctuations of the internal magnetic field (Bint), which arises from the spin-orbit interaction associated with the bulk inversion asymmetry of the crystal, lead to decoherence within 2 ns as the spins precess around Bext. In contrast, for transport along the [1-10] direction, the z-component of the spin polarization is maintained for times one order of magnitude longer due to the non-zero average value of Bint. The dephasing anisotropy between the two directions is fully understood in terms of the dependence of the spin-orbit coupling on carrier momentum direction, as predicted by the D''yakonov-Perel'' mechanism for the (110) system.